公开(公告)号：US20200248308A1

公开(公告)日：2020-08-06

申请号：US16854698

申请日：2020-04-21

Applicant: ASM IP HOLDING B.V.

Inventor： David Marquardt

IPC: C23C16/455 ,  H01L21/285 ,  H01L21/02

Abstract: A semiconductor device comprising a manifold for uniform vapor deposition is disclosed. The semiconductor device can include a manifold comprising a bore and having an inner wall. The inner wall can at least partially define the bore. A first axial portion of the bore can extend along a longitudinal axis of the manifold. A supply channel can provide fluid communication between a gas source and the bore. The supply channel can comprise a slit defining an at least partially annular gap through the inner wall of the manifold to deliver a gas from the gas source to the bore. The at least partially annular gap can be revolved about the longitudinal axis.

公开(公告)号：US20230017569A1

公开(公告)日：2023-01-19

申请号：US17947230

申请日：2022-09-19

Applicant: ASM IP Holding B.V.

Inventor： Petri Raisanen ,  David Marquardt ,  Thomas Aswad

IPC: C23C16/44 ,  C23C16/56 ,  C23C16/46 ,  C23C16/455 ,  C23C16/458

Abstract: A semiconductor processing apparatus is disclosed. The apparatus may include, a reaction chamber and a susceptor dispose in the reaction chamber configured for supporting a substrate thereon, the susceptor comprising a plurality of through-holes in an axial direction of the susceptor. The apparatus may also include, a plurality of lift pins, each of the lift pins being disposed within a respective through-hole, and at least one gas transmitting channel comprising one or more gas channel outlets, the one or more gas channel outlets being disposed proximate to the through-holes. Methods for processing a substrate within a reaction chamber are also disclosed.

公开(公告)号：US20170350011A1

公开(公告)日：2017-12-07

申请号：US15170639

申请日：2016-06-01

Applicant: ASM IP HOLDING B.V.

Inventor： David Marquardt

IPC: C23C16/455 ,  H01L21/02 ,  C23C16/458 ,  H01L21/285

Abstract: A semiconductor device comprising a manifold for uniform vapor deposition is disclosed. The semiconductor device can include a manifold comprising a bore and having an inner wall. The inner wall can at least partially define the bore. A first axial portion of the bore can extend along a longitudinal axis of the manifold. A supply channel can provide fluid communication between a gas source and the bore. The supply channel can comprise a slit defining an at least partially annular gap through the inner wall of the manifold to deliver a gas from the gas source to the bore. The at least partially annular gap can be revolved about the longitudinal axis.

公开(公告)号：US20160024656A1

公开(公告)日：2016-01-28

申请号：US14444744

申请日：2014-07-28

Applicant: ASM IP Holding B.V.

Inventor： Carl White ,  Eric Shero ,  Jereld Lee Winkler ,  David Marquardt

IPC: C23C16/455 ,  C23C16/44

CPC classification number: C23C16/45565 ,  C23C16/4401

Abstract: Showerhead assemblies, gas distribution plates, and systems including the same are disclosed. Exemplary showerhead assemblies include a gas distribution plate. Exemplary gas distribution plates include apertures designed to direct a flow of gas and to reduce stagnation of gas on surfaces of the plates.

Abstract translation: 公开了喷头组件，气体分布板和包括其的系统。 示例性的喷头组件包括气体分配板。 示例性的气体分布板包括设计成引导气流并且减少气体在板的表面上的停滞的孔。