Surface emitting photonic device
    11.
    发明授权
    Surface emitting photonic device 有权
    表面发射光子器件

    公开(公告)号:US08419956B2

    公开(公告)日:2013-04-16

    申请号:US13273421

    申请日:2011-10-14

    Abstract: A surface emitting photonic device including a substrate; and a waveguide structure on the substrate. The waveguide structure includes an active region along its longitudinal axis and the active region is for generating light. The waveguide structure also has a trench formed therein transverse to the active region and defining a first wall forming an angled facet at one end of the active region, the first wall having a normal that is at a non-parallel angle relative to the longitudinal axis of the waveguide structure. The trench also defines a second wall located opposite the first wall.

    Abstract translation: 包括衬底的表面发射光子器件; 以及衬底上的波导结构。 波导结构包括沿其纵向轴线的有源区域,并且有源区域用于产生光。 波导结构还具有横向于有源区域形成的沟槽,并且限定在有源区域的一端处形成成角度的小面的第一壁,第一壁具有相对于纵向轴线成非平行角度的法线 的波导结构。 沟槽还限定了与第一壁相对的第二壁。

    Wavelength converter/inverter
    13.
    发明申请
    Wavelength converter/inverter 有权
    波长转换器/逆变器

    公开(公告)号:US20050012982A1

    公开(公告)日:2005-01-20

    申请号:US10619434

    申请日:2003-07-16

    Applicant: Alex Behfar

    Inventor: Alex Behfar

    CPC classification number: H01S5/50 H01S5/101 H01S5/1071 H01S5/1082 H01S5/509

    Abstract: A ring cavity laser has at least two facets and a mechanism is provided to produce unidirectional propagation and light emission at a first wavelength. A source of laser light at a second wavelength is injected into the cavity to reverse the direction of propagation and to produce emission at the second wavelength.

    Abstract translation: 环形腔激光器具有至少两个面,并且提供机构以产生在第一波长处的单向传播和发光。 将第二波长的激光源注入空腔中以反转传播方向并产生第二波长的发射。

    SURFACE EMITTING PHOTONIC DEVICE
    14.
    发明申请
    SURFACE EMITTING PHOTONIC DEVICE 有权
    表面发射光电器件

    公开(公告)号:US20100316076A1

    公开(公告)日:2010-12-16

    申请号:US12725894

    申请日:2010-03-17

    Abstract: A surface emitting photonic device including a substrate; and a waveguide structure on the substrate. The waveguide structure includes an active region along its longitudinal axis and the active region is for generating light. The waveguide structure also has a trench formed therein transverse to the active region and defining a first wall forming an angled facet at one end of the active region, the first wall having a normal that is at a non-parallel angle relative to the longitudinal axis of the waveguide structure. The trench also defines a second wall located opposite the first wall.

    Abstract translation: 包括衬底的表面发射光子器件; 以及衬底上的波导结构。 波导结构包括沿其纵向轴线的有源区域,并且有源区域用于产生光。 波导结构还具有横向于有源区域形成的沟槽,并且限定在有源区域的一端形成倾斜小面的第一壁,第一壁具有相对于纵向轴线成非平行角度的法线 的波导结构。 沟槽还限定了与第一壁相对的第二壁。

    Low cost InGaAIN based lasers
    15.
    发明申请
    Low cost InGaAIN based lasers 有权
    低成本基于InGaAIN的激光器

    公开(公告)号:US20070045637A1

    公开(公告)日:2007-03-01

    申请号:US11509015

    申请日:2006-08-24

    Abstract: A method and structure for producing lasers having good optical wavefront characteristics, such as are needed for optical storage includes providing a laser wherein an output beam emerging from the laser front facet is essentially unobstructed by the edges of the semiconductor chip in order to prevent detrimental beam distortions. The semiconductor laser structure is epitaxially grown on a substrate with at least a lower cladding layer, an active layer, an upper cladding layer, and a contact layer. Dry etching through a lithographically defined mask produces a laser mesa of length lc and width bm. Another sequence of lithography and etching is used to form a ridge structure with width w on top of the mesa. The etching step also forming mirrors, or facets, on the ends of the laser waveguide structures. The length ls and width bs of the chip can be selected as convenient values equal to or longer than the waveguide length lc and mesa width bm, respectively. The waveguide length and width are selected so that for a given defect density D, the yield YD is larger than 50%.

    Abstract translation: 用于产生具有良好的光学波前特征的激光器的方法和结构,例如光学存储所需要的,包括提供一种激光器,其中从激光器前刻面出射的输出光束基本上被半导体芯片的边缘阻挡,以防止有害的光束 扭曲。 半导体激光器结构在至少具有下包层,有源层,上覆层和接触层的基板上外延生长。 通过光刻定义的掩模的干法蚀刻产生长度为1cm和宽度b m的激光台面。 使用光刻和蚀刻的另一序列来形成在台面顶部具有宽度w的脊结构。 蚀刻步骤还在激光波导结构的端部上形成反射镜或刻面。 可以选择芯片的长度长度和宽度b 作为等于或长于波导长度l1c和台面的方便值 宽度b 。 选择波导长度和宽度,使得对于给定的缺陷密度D,产率Y D大于50%。

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