公开(公告)号：US20150329970A1

公开(公告)日：2015-11-19

申请号：US14577828

申请日：2014-12-19

Applicant: Applied Materials, Inc.

Inventor： Adib KHAN ,  Shankar VENKATARAMAN ,  Jay D. PINSON, II ,  Jang-Gyoo YANG ,  Nitin Krishnarao INGLE ,  Qiwei LIANG

IPC: C23C16/56 ,  H01L21/677 ,  C23C16/46 ,  H01L21/02 ,  C23C16/44 ,  C23C16/455

CPC classification number: C23C16/56 ,  C23C16/44 ,  C23C16/45565 ,  C23C16/46 ,  H01L21/02282 ,  H01L21/67126 ,  H01L21/6719 ,  H01L21/67742 ,  H01L21/67778 ,  H01L21/68742 ,  H01L21/68785

Abstract: Embodiments of the present disclosure generally relate to a batch processing chamber that is adapted to simultaneously cure multiple substrates at one time. The batch processing chamber includes multiple processing sub-regions that are each independently temperature controlled. The batch processing chamber may include a first and a second sub-processing region that are each serviced by a substrate transport device external to the batch processing chamber. In addition, a slotted cover mounted on the loading opening of the batch curing chamber reduces the effect of ambient air entering the chamber during loading and unloading.

Abstract translation: 本公开的实施例一般涉及一次批处理室，其适于一次同时固化多个基板。 批处理室包括各自独立温度控制的多个处理子区域。 批处理室可以包括第一和第二子处理区域，每个子处理区域由批处理室外部的基板输送装置维护。 此外，安装在分批固化室的装载开口上的开槽盖减少了在装载和卸载期间进入室的环境空气的影响。

公开(公告)号：US20150013793A1

公开(公告)日：2015-01-15

申请号：US14481774

申请日：2014-09-09

Applicant: Applied Materials, Inc.

Inventor： Kien N. CHUC ,  Qiwei LIANG ,  Hanh D. NGUYEN ,  Xinglong CHEN ,  Matthew MILLER ,  Soonam PARK ,  Toan Q. TRAN ,  Adib KHAN ,  Jang-Gyoo YANG ,  Dmitry LUBOMIRSKY ,  Shankar VENKATARAMAN

IPC: C23C16/455

CPC classification number: C23C16/45565 ,  C23C16/452 ,  C23C16/45574 ,  H01J37/3244 ,  H01J37/32449 ,  Y10T137/85938

Abstract: Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.

Abstract translation: 提供了用于气体分配组件的装置和方法。 一方面，提供了一种气体分配组件，包括环形体，该环形体包括具有内环形壁，外壁，上表面和底表面的环形环，形成在上表面中的上凹部，以及形成 位于所述内部环形壁中的位于所述上部凹部中的上板，包括具有穿过其形成的多个第一孔的盘状体和位于所述座上的底板，所述底板包括具有多个第二孔的盘状体 通过其形成的孔与第一孔对准，以及形成在第二孔之间并穿过底板的多个第三孔，底板密封地联接到上板，以将多个第一和第二孔与多个 第三孔。

公开(公告)号：US20190368035A1

公开(公告)日：2019-12-05

申请号：US16383354

申请日：2019-04-12

Applicant: Applied Materials, Inc.

Inventor： Sultan MALIK ,  Srinivas D. NEMANI ,  Qiwei LIANG ,  Adib KHAN ,  Maximillian CLEMONS

IPC: C23C16/44

Abstract: Embodiments of the systems and methods herein are directed towards forming, via ALD or CVD, a protective film in-situ on a plurality of interior components of a process chamber. The interior components coated with the protective film include a chamber sidewall, a chamber bottom, a substrate support pedestal, a showerhead, and a chamber top. The protective film can be of various compositions including amorphous Si, carbosilane, polysilicon, SiC, SiN, SiO2, Al2O3, AlON, HfO2, or Ni3Al, and can vary in thickness from about 80 nm to about 250 nm.

公开(公告)号：US20190301009A1

公开(公告)日：2019-10-03

申请号：US16433064

申请日：2019-06-06

Applicant: Applied Materials, Inc.

Inventor： Tobin KAUFMAN-OSBORN ,  Srinivas D. NEMANI ,  Ludovic GODET ,  Qiwei LIANG ,  Adib KHAN

IPC: C23C16/04 ,  H01J37/32 ,  H01L21/677 ,  H01L21/67 ,  H01L21/687 ,  C23C16/56 ,  C23C16/54 ,  C23C16/455 ,  C23C16/02

Abstract: Embodiments described herein relate to apparatus and methods for processing a substrate. In one embodiment, a cluster tool apparatus is provided having a transfer chamber and a pre-clean chamber, a self-assembled monolayer (SAM) deposition chamber, an atomic layer deposition (ALD) chamber, and a post-processing chamber disposed about the transfer chamber. A substrate may be processed by the cluster tool and transferred between the pre-clean chamber, the SAM deposition chamber, the ALD chamber, and the post-processing chamber. Transfer of the substrate between each of the chambers may be facilitated by the transfer chamber which houses a transfer robot.

公开(公告)号：US20190048470A1

公开(公告)日：2019-02-14

申请号：US16164392

申请日：2018-10-18

Applicant: Applied Materials, Inc.

Inventor： Adib KHAN ,  Shankar VENKATARAMAN ,  Jay D. PINSON, II ,  Jang-Gyoo YANG ,  Nitin Krishnarao INGLE ,  Qiwei LIANG

IPC: C23C16/56 ,  H01L21/687 ,  H01L21/67 ,  H01L21/677 ,  C23C16/44 ,  H01L21/02 ,  C23C16/46 ,  C23C16/455

Abstract: Embodiments of the present disclosure generally relate to a batch processing chamber that is adapted to simultaneously cure multiple substrates at one time. The batch processing chamber includes multiple processing sub-regions that are each independently temperature controlled. The batch processing chamber may include a first and a second sub-processing region that are each serviced by a substrate transport device external to the batch processing chamber. In addition, a slotted cover mounted on the loading opening of the batch curing chamber reduces the effect of ambient air entering the chamber during loading and unloading.

公开(公告)号：US20170306491A1

公开(公告)日：2017-10-26

申请号：US15468758

申请日：2017-03-24

Applicant: Applied Materials, Inc.

Inventor： Qiwei LIANG ,  Adib KHAN ,  Tobin KAUFMAN-OSBORN ,  Srinivas D. NEMANI ,  Ludovic GODET

IPC: C23C16/455 ,  C23C16/46 ,  C23C16/458 ,  C23C16/505 ,  C23C16/44

CPC classification number: C23C16/45565 ,  B05D1/185 ,  B05D1/60 ,  C23C16/4405 ,  C23C16/4412 ,  C23C16/448 ,  C23C16/458 ,  C23C16/46 ,  C23C16/505

Abstract: Implementations described herein relate to apparatus and methods for self-assembled monolayer (SAM) deposition. Apparatus described herein includes processing chambers having various vapor phase delivery apparatus fluidly coupled thereto. SAM precursors may be delivered to process volumes of the chambers via various apparatus which is heated to maintain the precursors in vapor phase. In one implementation, a first ampoule or vaporizer configured to deliver a SAM precursor may be fluidly coupled to the process volume of a process chamber. A second ampoule or vaporizer configured to deliver a material different from the SAM precursor may also be fluidly coupled to the process volume of the process chamber.