公开(公告)号：US20190368035A1

公开(公告)日：2019-12-05

申请号：US16383354

申请日：2019-04-12

Applicant: Applied Materials, Inc.

Inventor： Sultan MALIK ,  Srinivas D. NEMANI ,  Qiwei LIANG ,  Adib KHAN ,  Maximillian CLEMONS

IPC: C23C16/44

Abstract: Embodiments of the systems and methods herein are directed towards forming, via ALD or CVD, a protective film in-situ on a plurality of interior components of a process chamber. The interior components coated with the protective film include a chamber sidewall, a chamber bottom, a substrate support pedestal, a showerhead, and a chamber top. The protective film can be of various compositions including amorphous Si, carbosilane, polysilicon, SiC, SiN, SiO2, Al2O3, AlON, HfO2, or Ni3Al, and can vary in thickness from about 80 nm to about 250 nm.

公开(公告)号：US20200343103A1

公开(公告)日：2020-10-29

申请号：US16926422

申请日：2020-07-10

Applicant: Applied Materials, Inc.

Inventor： Adib M. KHAN ,  Qiwei LIANG ,  Sultan MALIK ,  Srinivas D. NEMANI

IPC: H01L21/447 ,  C23C16/452 ,  H01L21/67

Abstract: The present disclosure relates to high pressure processing apparatus for semiconductor processing. The apparatus described herein include a high pressure process chamber and a containment chamber surrounding the process chamber. A high pressure fluid delivery module is in fluid communication with the high pressure process chamber and is configured to deliver a high pressure fluid to the process chamber.

公开(公告)号：US20200185260A1

公开(公告)日：2020-06-11

申请号：US16706115

申请日：2019-12-06

Applicant: Applied Materials, Inc.

Inventor： Sultan MALIK ,  Srinivas D. NEMANI ,  Qiwei LIANG ,  Adib M. KHAN

IPC: H01L21/687 ,  H01L21/673

Abstract: Embodiments of the disclosure relate to an apparatus and method for processing semiconductor substrates. In one embodiment, a processing system is disclosed. The processing system includes an outer chamber that surrounds an inner chamber. The inner chamber includes a substrate support upon which a substrate is positioned during processing. The inner chamber is configured to have an internal volume that, when isolated from an internal volume of the outer chamber, is changeable such that the pressure within the internal volume of the inner chamber may be varied.

公开(公告)号：US20210225687A1

公开(公告)日：2021-07-22

申请号：US16744478

申请日：2020-01-16

Applicant: Applied Materials, Inc.

Inventor： Sultan MALIK ,  Srinivas D. NEMANI ,  Adib M. KHAN ,  Qiwei LIANG

IPC: H01L21/687 ,  H01L21/677

Abstract: The present disclosure generally relates to a pin-less substrate transfer apparatus and method for a processing chamber. The processing chamber includes a pedestal. The pedestal includes a pedestal plate. The pedestal plate has a radius, a top surface, and a bottom surface. The pedestal plate further includes a plurality of cut outs on a perimeter of the pedestal plate. Flat edges are disposed on opposite sides of the pedestal plate. Recesses are disposed in the bottom surface below each of the flat edges.

公开(公告)号：US20200368666A1

公开(公告)日：2020-11-26

申请号：US16897045

申请日：2020-06-09

Applicant: Applied Materials, Inc.

Inventor： Adib KHAN ,  Qiwei LIANG ,  Sultan MALIK ,  Srinivas NEMANI ,  Rafika Smati ,  Joseph Ng ,  John O'Hehir

IPC: B01D53/04 ,  H01L21/67 ,  H01L21/673

Abstract: Embodiments of the present disclosure relate to gas abatement apparatus and effluent management. The apparatus described herein include a high pressure process chamber and a containment chamber surrounding the process chamber. A high pressure fluid delivery module is in fluid communication with the high pressure process chamber and is configured to deliver a high pressure fluid to the process chamber. An effluent management module includes a muffler assembly to effluent pressure reduction and a plurality of scrubbers provide for treatment of effluent.

公开(公告)号：US20200035513A1

公开(公告)日：2020-01-30

申请号：US16510848

申请日：2019-07-12

Applicant: Applied Materials, Inc.

Inventor： Adib KHAN ,  Qiwei LIANG ,  Sultan MALIK ,  Srinivas D. NEMANI

IPC: H01L21/67 ,  F01K1/00

Abstract: The present disclosure relates to high pressure processing apparatus for semiconductor processing. The apparatus described herein include a high pressure process chamber and a containment chamber surrounding the process chamber. A steam delivery module is in fluid communication with the high pressure process chamber and is configured to deliver steam to the process chamber. The steam delivery module includes a boiler and a steam reservoir.

公开(公告)号：US20200038797A1

公开(公告)日：2020-02-06

申请号：US16055929

申请日：2018-08-06

Applicant: Applied Materials, Inc.

Inventor： Adib KHAN ,  Qiwei LIANG ,  Sultan MALIK ,  Srinivas NEMANI ,  Rafika Smati ,  Joseph Ng ,  John O'Hehir

IPC: B01D53/04 ,  H01L21/673 ,  H01L21/67

Abstract: Embodiments of the present disclosure relate to gas abatement apparatus and effluent management. The apparatus described herein include a high pressure process chamber and a containment chamber surrounding the process chamber. A high pressure fluid delivery module is in fluid communication with the high pressure process chamber and is configured to deliver a high pressure fluid to the process chamber. An effluent management module includes a muffler assembly to effluent pressure reduction and a plurality of scrubbers provide for treatment of effluent.

公开(公告)号：US20200035509A1

公开(公告)日：2020-01-30

申请号：US16510847

申请日：2019-07-12

Applicant: Applied Materials, Inc.

Inventor： Adib M. KHAN ,  Qiwei LIANG ,  Sultan MALIK ,  Srinivas D. NEMANI

IPC: H01L21/447 ,  H01L21/67 ,  C23C16/452

Abstract: The present disclosure relates to high pressure processing apparatus for semiconductor processing. The apparatus described herein include a high pressure process chamber and a containment chamber surrounding the process chamber. A high pressure fluid delivery module is in fluid communication with the high pressure process chamber and is configured to deliver a high pressure fluid to the process chamber.

公开(公告)号：US20180261480A1

公开(公告)日：2018-09-13

申请号：US15917365

申请日：2018-03-09

Applicant: Applied Materials, Inc.

Inventor： Qiwei LIANG ,  Srinivas D. NEMANI ,  Adib KHAN ,  Venkata Ravishankar KASIBHOTLA ,  Sultan MALIK ,  Sean S. KANG ,  Keith Tatseun WONG

IPC: H01L21/67

CPC classification number: H01L21/67196 ,  C23C16/52 ,  H01L21/324 ,  H01L21/67017 ,  H01L21/67098 ,  H01L21/67103 ,  H01L21/67126 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/68742 ,  H01L21/76841

Abstract: A high-pressure processing system for processing a substrate includes a first chamber, a pedestal positioned within the first chamber to support the substrate, a second chamber adjacent the first chamber, a vacuum processing system configured to lower a pressure within the second chamber to near vacuum, a valve assembly between the first chamber and the second chamber to isolate the pressure within the first chamber from the pressure within the second chamber, and a gas delivery system configured to introduce a processing gas into the first chamber and to increase the pressure within the first chamber to at least 10 atmospheres while the processing gas is in the first chamber and while the first chamber is isolated from the second chamber.