公开(公告)号：US20190119813A1

公开(公告)日：2019-04-25

申请号：US16126760

申请日：2018-09-10

Applicant: Applied Materials, Inc.

Inventor： Adib KHAN ,  Qiwei LIANG ,  Srinivas D. NEMANI ,  Tobin KAUFMAN-OSBORN

IPC: C23C16/455 ,  C23C16/448 ,  C23C16/44

Abstract: A method and apparatus for delivering gases to a semiconductor processing system are provided. In some embodiments, the apparatus includes a gas inlet line having an inlet valve; a gas outlet line having an outlet valve; a gas flow controller arranged to control the flow through the inlet valve; an orifice contained within at least one of the gas outlet line, the outlet valve, a chemical ampoule outlet valve, or outlet isolation valve; a chemical ampoule fluidly coupled to at least one of the gas inlet line and the gas outlet line; and a processing chamber. In some embodiments, the apparatus further includes a check valve, one or more orifices, and/or a heated divert line.

公开(公告)号：US20170350004A1

公开(公告)日：2017-12-07

申请号：US15173356

申请日：2016-06-03

Applicant: Applied Materials, Inc.

Inventor： Tobin KAUFMAN-OSBORN ,  Srinivas D. NEMANI ,  Ludovic GODET ,  Qiwei LIANG ,  Adib KHAN

IPC: C23C16/04 ,  H01L21/67 ,  H01L21/677 ,  H01J37/32 ,  H01L21/8234

CPC classification number: C23C16/042 ,  C23C16/02 ,  C23C16/45502 ,  C23C16/45544 ,  C23C16/45561 ,  C23C16/45582 ,  C23C16/54 ,  C23C16/56 ,  H01J37/32357 ,  H01J37/32724 ,  H01J37/32733 ,  H01J37/32899 ,  H01J2237/327 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67207 ,  H01L21/67742 ,  H01L21/67748 ,  H01L21/67754 ,  H01L21/68785 ,  H01L21/823431

Abstract: Embodiments described herein relate to apparatus and methods for processing a substrate. In one embodiment, a cluster tool apparatus is provided having a transfer chamber and a pre-clean chamber, a self-assembled monolayer (SAM) deposition chamber, an atomic layer deposition (ALD) chamber, and a post-processing chamber disposed about the transfer chamber. A substrate may be processed by the cluster tool and transferred between the pre-clean chamber, the SAM deposition chamber, the ALD chamber, and the post-processing chamber. Transfer of the substrate between each of the chambers may be facilitated by the transfer chamber which houses a transfer robot.

公开(公告)号：US20250163607A1

公开(公告)日：2025-05-22

申请号：US18516728

申请日：2023-11-21

Applicant: Applied Materials, Inc.

Inventor： Justin GAU ,  Shekhar ATHANI ,  Rahul KOZHIKKALKANDI ,  Nithin ALEX ,  Adib KHAN ,  Qiwei LIANG ,  Lancelot HUANG ,  Junghoon KIM ,  Hyunjun KIM ,  Douglas A. BUCHBERGER, JR. ,  Vishwas Kumar PANDEY ,  Srinivas D. NEMANI ,  Ellie Y. YIEH ,  Dmitry LUBOMIRSKY

IPC: C30B25/08 ,  C30B25/12 ,  C30B25/14

Abstract: Disclosed herein is a processing chamber for a low temperature epitaxy deposition and components of the same. The processing chamber includes a dome lid coupled with a lid liner via a lid liner separator; a remote plasma source disposed outside the dome lid and operable to energize a process gas; a gas ring disposed under the dome lid and coupled with a gas ring liner via a gas ring liner separator; a showerhead disposed under the gas ring; a susceptor disposed below the showerhead and operable to heat a substrate by conduction; and a side wall disposed under the gas ring and coupled with a wall liner via a wall liner separator. The cleaning method of the processing chamber is also disclosed.

公开(公告)号：US20200368666A1

公开(公告)日：2020-11-26

申请号：US16897045

申请日：2020-06-09

Applicant: Applied Materials, Inc.

Inventor： Adib KHAN ,  Qiwei LIANG ,  Sultan MALIK ,  Srinivas NEMANI ,  Rafika Smati ,  Joseph Ng ,  John O'Hehir

IPC: B01D53/04 ,  H01L21/67 ,  H01L21/673

Abstract: Embodiments of the present disclosure relate to gas abatement apparatus and effluent management. The apparatus described herein include a high pressure process chamber and a containment chamber surrounding the process chamber. A high pressure fluid delivery module is in fluid communication with the high pressure process chamber and is configured to deliver a high pressure fluid to the process chamber. An effluent management module includes a muffler assembly to effluent pressure reduction and a plurality of scrubbers provide for treatment of effluent.

公开(公告)号：US20200035513A1

公开(公告)日：2020-01-30

申请号：US16510848

申请日：2019-07-12

Applicant: Applied Materials, Inc.

Inventor： Adib KHAN ,  Qiwei LIANG ,  Sultan MALIK ,  Srinivas D. NEMANI

IPC: H01L21/67 ,  F01K1/00

Abstract: The present disclosure relates to high pressure processing apparatus for semiconductor processing. The apparatus described herein include a high pressure process chamber and a containment chamber surrounding the process chamber. A steam delivery module is in fluid communication with the high pressure process chamber and is configured to deliver steam to the process chamber. The steam delivery module includes a boiler and a steam reservoir.

公开(公告)号：US20250051965A1

公开(公告)日：2025-02-13

申请号：US18232668

申请日：2023-08-10

Applicant: Applied Materials, Inc.

Inventor： Gautam PISHARODY ,  Parth SWAROOP ,  Xiaoxiong YUAN ,  Paneendra Prakash BHAT ,  Qiwei LIANG ,  Dmitry LUBOMIRSKY ,  Adib KHAN ,  Douglas A. BUCHBERGER, Jr.

IPC: C30B35/00 ,  C30B25/02

Abstract: Disclosed herein are a showerhead and a deposition chamber containing the showerhead. The showerhead includes a first delivery network for a first precursor that comprises a first manifold connected with a first distribution system comprising a plurality of first distribution channels concentrically disposed around an axis, and a second delivery network for a second precursor that comprises a second manifold connected with a second distributions system comprising a plurality of second distribution channels concentrically disposed around the axis. The first delivery network and the second delivery network are isolated from each other within the showerhead.

公开(公告)号：US20250037974A1

公开(公告)日：2025-01-30

申请号：US18227226

申请日：2023-07-27

Applicant: Applied Materials, Inc.

Inventor： Dmitry LUBOMIRSKY ,  Junghoon KIM ,  Hyun Joo LEE ,  Pranav Vijay GADRE ,  Adib KHAN ,  Nithin Thomas ALEX ,  Douglas A. BUCHBERGER, Jr. ,  Qiwei LIANG ,  Ellie Y. YIEH ,  Shekhar ATHANI

IPC: H01J37/32

Abstract: Disclosed herein is a processing system. The processing system has an upper chamber body and a lower chamber body defining a processing environment. An upper heater is moveably disposed in the upper chamber body. The upper heater has a moveable support and an upper step formed along an outer perimeter. A lower showerhead is fixedly disposed in the lower chamber body. The lower showerhead includes a top surface configured to support a substrate, a lower step disposed along an outer perimeter wherein the substrate is configured to extend from the top surface partially over the lower step. Lift pins are disposed in the lower showerhead and configured to extend through the top surface and support the substrate thereon. Gas holes are disposed in a first zone along the top surface and a second zone on the step and configured to independently flow both a process and non-process gas.

公开(公告)号：US20200038797A1

公开(公告)日：2020-02-06

申请号：US16055929

申请日：2018-08-06

Applicant: Applied Materials, Inc.

Inventor： Adib KHAN ,  Qiwei LIANG ,  Sultan MALIK ,  Srinivas NEMANI ,  Rafika Smati ,  Joseph Ng ,  John O'Hehir

IPC: B01D53/04 ,  H01L21/673 ,  H01L21/67

Abstract: Embodiments of the present disclosure relate to gas abatement apparatus and effluent management. The apparatus described herein include a high pressure process chamber and a containment chamber surrounding the process chamber. A high pressure fluid delivery module is in fluid communication with the high pressure process chamber and is configured to deliver a high pressure fluid to the process chamber. An effluent management module includes a muffler assembly to effluent pressure reduction and a plurality of scrubbers provide for treatment of effluent.

公开(公告)号：US20180261480A1

公开(公告)日：2018-09-13

申请号：US15917365

申请日：2018-03-09

Applicant: Applied Materials, Inc.

Inventor： Qiwei LIANG ,  Srinivas D. NEMANI ,  Adib KHAN ,  Venkata Ravishankar KASIBHOTLA ,  Sultan MALIK ,  Sean S. KANG ,  Keith Tatseun WONG

IPC: H01L21/67

CPC classification number: H01L21/67196 ,  C23C16/52 ,  H01L21/324 ,  H01L21/67017 ,  H01L21/67098 ,  H01L21/67103 ,  H01L21/67126 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/68742 ,  H01L21/76841

Abstract: A high-pressure processing system for processing a substrate includes a first chamber, a pedestal positioned within the first chamber to support the substrate, a second chamber adjacent the first chamber, a vacuum processing system configured to lower a pressure within the second chamber to near vacuum, a valve assembly between the first chamber and the second chamber to isolate the pressure within the first chamber from the pressure within the second chamber, and a gas delivery system configured to introduce a processing gas into the first chamber and to increase the pressure within the first chamber to at least 10 atmospheres while the processing gas is in the first chamber and while the first chamber is isolated from the second chamber.

公开(公告)号：US20220341042A1

公开(公告)日：2022-10-27

申请号：US17861750

申请日：2022-07-11

Applicant: Applied Materials, Inc.

Inventor： Adib KHAN ,  Shankar VENKATARAMAN ,  Jay D. PINSON, II ,  Jang-Gyoo YANG ,  Nitin K. INGLE ,  Qiwei LIANG

IPC: C23C16/56 ,  C23C16/44 ,  C23C16/455 ,  C23C16/46 ,  H01L21/02 ,  H01L21/677 ,  H01L21/67 ,  H01L21/687

Abstract: Embodiments of the present disclosure generally relate to a batch processing chamber that is adapted to simultaneously cure multiple substrates at one time. The batch processing chamber includes multiple processing sub-regions that are each independently temperature controlled. The batch processing chamber may include a first and a second sub-processing region that are each serviced by a substrate transport device external to the batch processing chamber. In addition, a slotted cover mounted on the loading opening of the batch curing chamber reduces the effect of ambient air entering the chamber during loading and unloading.