公开(公告)号：US20180291051A1

公开(公告)日：2018-10-11

申请号：US15947697

申请日：2018-04-06

Applicant: Applied Materials, Inc.

Inventor： Jeffrey W. Anthis ,  Atashi Basu

IPC: C07F15/06 ,  C07F13/00 ,  C07F15/00 ,  C07F15/02 ,  C07F15/04 ,  C23C16/18 ,  C23C16/455

Abstract: Metal coordination complexes comprising at least one diazabutadiene based ligand having a structure represented by: where A1, A2, A3, and A4 are atoms in a 6-membered ring and are independently selected from C, N, O, S, and P; and where R1, R2, R3, R4, R5, and R6 are independently selected from the group consisting of H, amino groups, C1-C6 alkyl groups, or C4-10 cycloalkyl groups; and further provided that alkyl groups may optionally contain silicon; and where the metal coordination complex is capable of participating in a Diels-Alder type reaction with a dienophile. Processing methods using the metal coordination complexes are also described.

公开(公告)号：US11515151B2

公开(公告)日：2022-11-29

申请号：US16753534

申请日：2018-10-05

Applicant: Applied Materials, Inc.

Inventor： Kurt Fredrickson ,  Atashi Basu ,  Mihaela Balseanu ,  Ning Li

IPC: H01L21/31 ,  H01L21/02 ,  C23C16/34 ,  C23C16/40

Abstract: Methods and precursors for selectively depositing a metal film on a silicon nitride surface relative to a silicon oxide surface are described. The substrate comprising both surfaces is exposed to a blocking compound to selectively block the silicon oxide surface. A metal film is then selectively deposited on the silicon nitride surface.

公开(公告)号：US20210358744A1

公开(公告)日：2021-11-18

申请号：US17391412

申请日：2021-08-02

Applicant: Applied Materials, Inc.

Inventor： Eswaranand Venkatasubramanian ,  Srinivas Gandikota ,  Kelvin Chan ,  Atashi Basu ,  Abhijit Basu Mallick

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  H01L29/51 ,  H01L29/66 ,  H01L29/78

Abstract: A microelectronic device on a semiconductor substrate comprises: a gate electrode; and a spacer adjacent to the gate electrode, the spacer comprising: a the low-k dielectric film comprising one or more species of vanadium oxide, which is optionally doped, and an optional silicon nitride or oxide film. Methods comprise depositing a low-k dielectric film optionally sandwiched by a silicon nitride or oxide film to form a spacer adjacent to a gate electrode of a microelectronic device on a semiconductor substrate, wherein the low-k dielectric film comprises a vanadium-containing film.

公开(公告)号：US10811250B2

公开(公告)日：2020-10-20

申请号：US16027783

申请日：2018-07-05

Applicant: Applied Materials, Inc.

Inventor： Atashi Basu ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: C23C16/34 ,  H01L21/02 ,  C23C16/452 ,  C23C16/56 ,  C23C16/505 ,  C23C16/04 ,  C23C16/455

Abstract: Methods for depositing silicon nitride films with higher nitrogen content are described. Certain methods comprise exposing a substrate to a silicon-nitrogen precursor and ammonia plasma to form a flowable polymer, and then curing the polymer to form a silicon nitride film. Certain methods cure the flowable polymer without the use of a UV-cure process. Also described is the film generated by the methods described above.

公开(公告)号：US20200312653A1

公开(公告)日：2020-10-01

申请号：US16753534

申请日：2018-10-05

Applicant: Applied Materials, Inc.

Inventor： Kurt Fredrickson ,  Atashi Basu ,  Mihaela Balseanu ,  Ning Li

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/40 ,  C23C16/04 ,  C23C16/455

Abstract: Methods and precursors for selectively depositing a metal film on a silicon nitride surface relative to a silicon oxide surface are described. The substrate comprising both surfaces is exposed to a blocking compound to selectively block the silicon oxide surface. A metal film is then selectively deposited on the silicon nitride surface.

公开(公告)号：US10475642B2

公开(公告)日：2019-11-12

申请号：US15491331

申请日：2017-04-19

Applicant: Applied Materials, Inc.

Inventor： Eswaranand Venkatasubramanian ,  Srinivas Gandikota ,  Kelvin Chan ,  Atashi Basu ,  Abhijit Basu Mallick

IPC: H01L21/02 ,  H01L29/66 ,  C23C16/455 ,  C23C16/40 ,  H01L29/78 ,  H01L29/51

Abstract: A microelectronic device on a semiconductor substrate comprises: a gate electrode; and a spacer adjacent to the gate electrode, the spacer comprising: a the low-k dielectric film comprising one or more species of vanadium oxide, which is optionally doped, and an optional silicon nitride or oxide film. Methods comprise depositing a low-k dielectric film optionally sandwiched by a silicon nitride or oxide film to form a spacer adjacent to a gate electrode of a microelectronic device on a semiconductor substrate, wherein the low-k dielectric film comprises a vanadium-containing film.

公开(公告)号：US10319636B2

公开(公告)日：2019-06-11

申请号：US15801949

申请日：2017-11-02

Applicant: Applied Materials, Inc.

Inventor： Atashi Basu ,  Abhijit Basu Mallick ,  Ziqing Duan ,  Srinivas Gandikota

IPC: H01L21/02 ,  H01L21/033 ,  H01L21/266 ,  H01L21/762 ,  H01L21/768 ,  H01L21/3213

Abstract: Methods comprising depositing a film material to form an initial film in a trench in a substrate surface are described. The film is treated to expand the film to grow beyond the substrate surface.

公开(公告)号：US20190013197A1

公开(公告)日：2019-01-10

申请号：US16027783

申请日：2018-07-05

Applicant: Applied Materials, Inc.

Inventor： Atashi Basu ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: H01L21/02 ,  C23C16/34

Abstract: Methods for depositing silicon nitride films with higher nitrogen content are described. Certain methods comprise exposing a substrate to a silicon-nitrogen precursor and ammonia plasma to form a flowable polymer, and then curing the polymer to form a silicon nitride film. Certain methods cure the flowable polymer without the use of a UV-cure process. Also described is the film generated by the methods described above.

公开(公告)号：US20180269065A1

公开(公告)日：2018-09-20

申请号：US15462214

申请日：2017-03-17

Applicant: Applied Materials, Inc.

Inventor： Wenyu Zhang ,  Wei V. Tang ,  Yixiong Yang ,  Chen-Han Lin ,  Yi Xu ,  Yu Lei ,  Naomi Yoshida ,  Lin Dong ,  Drew Phillips ,  Srividya Natarajan ,  Atashi Basu ,  Kaliappan Muthukumar ,  David Thompson ,  Paul F. Ma

IPC: H01L21/285 ,  C23C14/14 ,  C23C12/00 ,  H01L29/66 ,  H01L29/45 ,  H01L21/28 ,  H01L29/49

CPC classification number: H01L21/28556 ,  C23C12/00 ,  C23C14/14 ,  C23C16/34 ,  H01L21/28088 ,  H01L21/28568 ,  H01L29/456 ,  H01L29/4966 ,  H01L29/66795

Abstract: Described are methods of depositing a titanium aluminum nitride film on a substrate surface with a controlled amount of carbon. The methods include exposing a substrate surface to a titanium precursor, a nitrogen reactant and an aluminum precursor with purges of the unreacted titanium and aluminum precursors and unreacted nitrogen reactants between each exposure.

公开(公告)号：US11887847B2

公开(公告)日：2024-01-30

申请号：US17994932

申请日：2022-11-28

Applicant: Applied Materials, Inc.

Inventor： Kurt Fredrickson ,  Atashi Basu ,  Mihaela A. Balseanu ,  Ning Li

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/40

CPC classification number: H01L21/0228 ,  C23C16/34 ,  C23C16/40 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02205

Abstract: Methods and precursors for selectively depositing a metal film on a silicon nitride surface relative to a silicon oxide surface are described. The substrate comprising both surfaces is exposed to a blocking compound to selectively block the silicon oxide surface. A metal film is then selectively deposited on the silicon nitride surface.