公开(公告)号：US11300871B2

公开(公告)日：2022-04-12

申请号：US16861788

申请日：2020-04-29

Applicant: Applied Materials, Inc.

Inventor： Shiyu Liu ,  Shuwei Liu ,  Vibhu Jindal ,  Azeddine Zerrade

IPC: G03F1/24 ,  G03F1/60 ,  G03F1/58

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate, a multilayer stack of reflective layers on the substrate, a capping layer on the multilayer stack of reflecting layers, and an absorber on the capping layer. The absorber comprising a plurality of bilayers comprising a first layer of silicon and a second layer selected from the group consisting of TaSb, CSb, TaNi, TaCu, SbN, CrN, Cr, Ir, Pd, Re, Os, Cd, Co, Ag, Pt, oxides of TaSb, CSb, TaNi, TaCu, SbN, CrN, Cr, Ir, Pd, Re, Os, Cd, Co, Ag, Pt, and nitrides of TaSb, CSb, TaNi, TaCu, Cr, Ir, Pd, Re, Os, Cd, Co, Ag, and Pt.

公开(公告)号：US20210302826A1

公开(公告)日：2021-09-30

申请号：US17209707

申请日：2021-03-23

Applicant: Applied Materials, Inc.

Inventor： Shuwei Liu ,  Shiyu Liu ,  Azeddine Zerrade ,  Vibhu Jindal

IPC: G03F1/58 ,  G03F1/24

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate,; a multilayer stack of reflective layers on the substrate, a capping layer on the multilayer stack of reflecting layers, and an absorber on the capping layer. The absorber comprises a first layer selected from the group consisting of Mo, Nb, V, alloys of Mo, Nb and V, oxides of Mo, oxides of Nb, oxides of V, nitrides of Mo, nitrides of Nb and nitrides of V and a second layer selected from the group consisting of TaSb, CSb, SbN, TaNi, TaCu and TaRu.

公开(公告)号：US20210232039A1

公开(公告)日：2021-07-29

申请号：US17152068

申请日：2021-01-19

Applicant: Applied Materials, Inc.

Inventor： Shuwei Liu ,  Wen Xiao ,  Vibhu Jindal ,  Azeddine Zerrade

IPC: G03F1/24 ,  G03F1/54 ,  H01L21/033

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from tantalum and ruthenium.

公开(公告)号：US11789358B2

公开(公告)日：2023-10-17

申请号：US17234996

申请日：2021-04-20

Applicant: Applied Materials, Inc.

Inventor： Wen Xiao ,  Vibhu Jindal ,  Weimin Li ,  Sanjay Bhat ,  Azeddine Zerrade

IPC: G03F1/24

CPC classification number: G03F1/24

Abstract: Extreme ultraviolet (EUV) mask blanks and methods for their manufacture, and production systems therefor are disclosed. The method for forming an EUV mask blank comprises smoothing out surface defects on a surface of a substrate.

公开(公告)号：US11669008B2

公开(公告)日：2023-06-06

申请号：US17077176

申请日：2020-10-22

Applicant: Applied Materials, Inc.

Inventor： Wen Xiao ,  Sanjay Bhat ,  Shiyu Liu ,  Binni Varghese ,  Vibhu Jindal ,  Azeddine Zerrade

IPC: G03F1/22 ,  C23C14/34 ,  H01J37/34 ,  C23C14/06 ,  H01J37/32 ,  C23C14/00

CPC classification number: G03F1/22 ,  C23C14/0036 ,  C23C14/0652 ,  C23C14/0676 ,  C23C14/3464 ,  H01J37/32477 ,  H01J37/3429

Abstract: Methods for the manufacture of extreme ultraviolet (EUV) mask blanks and production systems therefor are disclosed. A method for forming an EUV mask blank comprises forming a bilayer on a portion of a multi-cathode PVD chamber interior and then forming a multilayer stack of Si/Mo on a substrate in the multi-cathode PVD chamber.

公开(公告)号：US11537040B2

公开(公告)日：2022-12-27

申请号：US17157093

申请日：2021-01-25

Applicant: Applied Materials, Inc.

Inventor： Shuwei Liu ,  Wen Xiao ,  Vibhu Jindal ,  Azeddine Zerrade

IPC: G03F1/24

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; an absorber layer on the capping layer, the absorber layer comprising a tantalum-containing material; and a hard mask layer on the absorber layer, the hard mask layer comprising a hard mask material selected from the group consisting of CrO, CrON, TaNi, TaRu and TaCu.

公开(公告)号：US11454876B2

公开(公告)日：2022-09-27

申请号：US17120779

申请日：2020-12-14

Applicant: Applied Materials, Inc.

Inventor： Binni Varghese ,  Vibhu Jindal ,  Azeddine Zerrade ,  Shiyu Liu ,  Ramya Ramalingam

IPC: G03F1/22 ,  G03F1/54

Abstract: Methods of coating extreme ultraviolet (EUV) reticle carrier assemblies are disclosed. The method includes depositing an adhesion layer on the EUV reticle carrier assembly, depositing at least one EUV absorber layer on the EUV reticle carrier assembly and depositing a stress-relieving layer on EUV reticle carrier assembly. The coated EUV reticle carrier assemblies exhibit reduced particle defect generation during EUV mask blank manufacturing.

公开(公告)号：US20220187696A1

公开(公告)日：2022-06-16

申请号：US17120779

申请日：2020-12-14

Applicant: Applied Materials, Inc.

Inventor： Binni Varghese ,  Vibhu Jindal ,  Azeddine Zerrade ,  Shiyu Liu ,  Ramya Ramalingam

IPC: G03F1/22 ,  G03F1/54

Abstract: Methods of coating extreme ultraviolet (EUV) reticle carrier assemblies are disclosed. The method includes depositing an adhesion layer on the EUV reticle carrier assembly, depositing at least one EUV absorber layer on the EUV reticle carrier assembly and depositing a stress-relieving layer on EUV reticle carrier assembly. The coated EUV reticle carrier assemblies exhibit reduced particle defect generation during EUV mask blank manufacturing.

公开(公告)号：US20210341828A1

公开(公告)日：2021-11-04

申请号：US16861788

申请日：2020-04-29

Applicant: Applied Materials, Inc.

Inventor： Shiyu Liu ,  Shuwei Liu ,  Vibhu Jindal ,  Azeddine Zerrade

IPC: G03F1/24 ,  G03F1/58 ,  G03F1/60

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate, a multilayer stack of reflective layers on the substrate, a capping layer on the multilayer stack of reflecting layers, and an absorber on the capping layer. The absorber comprising a plurality of bilayers comprising a first layer of silicon and a second layer selected from the group consisting of TaSb, CSb, TaNi, TaCu, SbN, CrN, Cr, Ir, Pd, Re, Os, Cd, Co, Ag, Pt, oxides of TaSb, CSb, TaNi, TaCu, SbN, CrN, Cr, Ir, Pd, Re, Os, Cd, Co, Ag, Pt, and nitrides of TaSb, CSb, TaNi, TaCu, Cr, Ir, Pd, Re, Os, Cd, Co, Ag, and Pt.

公开(公告)号：US20210232041A1

公开(公告)日：2021-07-29

申请号：US17157093

申请日：2021-01-25

Applicant: Applied Materials, Inc.

Inventor： Shuwei Liu ,  Wen Xiao ,  Vibhu Jindal ,  Azeddine Zerrade

IPC: G03F1/24 ,  G03F1/54 ,  C22C27/06 ,  C22C27/02

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; an absorber layer on the capping layer, the absorber layer comprising a tantalum-containing material; and a hard mask layer on the absorber layer, the hard mask layer comprising a hard mask material selected from the group consisting of CrO, CrON, TaNi, TaRu and TaCu.