公开(公告)号：US09514933B2

公开(公告)日：2016-12-06

申请号：US14587131

申请日：2014-12-31

Applicant: Applied Materials, Inc.

Inventor： Yu Lei ,  Srinivas Gandikota ,  Seshadri Ganguli ,  Bo Zheng ,  Rajkumar Jakkaraju ,  Martin Jeff Salinas ,  Benjamin Schmiege

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/3205 ,  H01L21/3213 ,  C23C16/455 ,  H01L21/285

CPC classification number: H01L21/0228 ,  C23C16/45551 ,  H01L21/0217 ,  H01L21/02175 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02194 ,  H01L21/28562 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/32051 ,  H01L21/32136

Abstract: Provided are atomic layer deposition methods to deposit a film using a circular batch processing chamber with a plurality of sections separated by gas curtains so that each section independently has a process condition.

Abstract translation: 提供了使用具有由气帘分开的多个部分的圆形间歇处理室沉积膜的原子层沉积方法，使得每个部分独立地具有工艺条件。

公开(公告)号：US20200148712A1

公开(公告)日：2020-05-14

申请号：US16747220

申请日：2020-01-20

Applicant: Applied Materials, Inc.

Inventor： Benjamin Schmiege ,  Jeffrey W. Anthis ,  David Thompson

IPC: C07F15/00 ,  C23C16/18 ,  C23C16/40 ,  C23C16/455 ,  C23C16/50 ,  C23C16/34

Abstract: Metal coordination complexes comprising a metal atom coordinated to at least one diazabutadiene ligand having a structure represented by: where each R is independently a C1-C13 alkyl or aryl group and each R′ is independently H, C1-C10 alkyl or aryl group are described. Processing methods using the metal coordination complexes are also described.

公开(公告)号：US10323054B2

公开(公告)日：2019-06-18

申请号：US15823755

申请日：2017-11-28

Applicant: Applied Materials, Inc.

Inventor： Benjamin Schmiege ,  Jeffrey W. Anthis ,  David Thompson

IPC: C07F15/06 ,  C07F5/00 ,  C07F15/04 ,  C07F15/02

Abstract: Metal coordination complexes comprising a metal atom coordinated to at least one aza-allyl ligand having the structure represented by: where each R1-R4 are independently selected from the group consisting of H, branched or unbranched C1-C6 alkyl, branched or unbranched C1-C6 alkenyl, branched or unbranched C1-C6 alkynyl, cycloalkyl groups having in the range of 1 to 6 carbon atoms, silyl groups and halogens. Methods of depositing a film using the metal coordination complex and a suitable reactant are also described.

公开(公告)号：US10297462B2

公开(公告)日：2019-05-21

申请号：US15789282

申请日：2017-10-20

Applicant: Applied Materials, Inc.

Inventor： Jeffrey W. Anthis ,  Benjamin Schmiege ,  David Thompson

IPC: H01L21/3213 ,  C23F1/00 ,  H01J37/32 ,  C23F1/12 ,  C23F4/00

Abstract: Provided are methods for etching films comprising transition metals. Certain methods involve activating a substrate surface comprising at least one transition metal, wherein activation of the substrate surface comprises exposing the substrate surface to heat, a plasma, an oxidizing environment, or a halide transfer agent to provide an activated substrate surface; and exposing the activated substrate surface to a reagent comprising a Lewis base or pi acid to provide a vapor phase coordination complex comprising one or more atoms of the transition metal coordinated to one or more ligands from the reagent. Certain other methods provide selective etching from a multi-layer substrate comprising two or more of a layer of Co, a layer of Cu and a layer of Ni.

公开(公告)号：US20190013202A1

公开(公告)日：2019-01-10

申请号：US16128962

申请日：2018-09-12

Applicant: Applied Materials,Inc.

Inventor： David Thompson ,  Benjamin Schmiege ,  Jeffrey W. Anthis ,  Abhijit Basu Mallick ,  Susmit Singha Roy ,  Ziqing Duan

IPC: H01L21/033 ,  H01L21/3213 ,  C23F1/00

CPC classification number: H01L21/0338 ,  C23F1/00 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/321 ,  H01L21/32133 ,  H01L21/32139 ,  H01L21/76805 ,  H01L21/76883 ,  H01L21/76897

Abstract: Processing methods comprising selectively orthogonally growing a first material through a mask to provide an expanded first material are described. The mask can be removed leaving the expanded first material extending orthogonally from the surface of the first material. Further processing can create a self-aligned via.

公开(公告)号：US10083834B2

公开(公告)日：2018-09-25

申请号：US15718148

申请日：2017-09-28

Applicant: Applied Materials, Inc.

Inventor： David Thompson ,  Benjamin Schmiege ,  Jeffrey W. Anthis ,  Abhijit Basu Mallick ,  Susmit Singha Roy ,  Ziqing Duan

IPC: H01L21/00 ,  H01L21/033 ,  C23F1/00 ,  H01L21/3213

CPC classification number: H01L21/0338 ,  C23F1/00 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/321 ,  H01L21/32133 ,  H01L21/32139 ,  H01L21/76805 ,  H01L21/76883 ,  H01L21/76897

Abstract: Processing methods comprising selectively orthogonally growing a first material through a mask to provide an expanded first material are described. The mask can be removed leaving the expanded first material extending orthogonally from the surface of the first material. Further processing can create a self-aligned via.

公开(公告)号：US09799533B2

公开(公告)日：2017-10-24

申请号：US15177726

申请日：2016-06-09

Applicant: Applied Materials, Inc.

Inventor： Jeffrey W. Anthis ,  Benjamin Schmiege ,  David Thompson

IPC: H01L21/321 ,  H01L21/3213 ,  C23F1/00 ,  H01J37/32 ,  C23F1/12 ,  C23F4/00

CPC classification number: H01L21/32136 ,  C23F1/00 ,  C23F1/12 ,  C23F4/00 ,  H01J37/32715 ,  H01J37/32862 ,  H01L21/32135

Abstract: Provided are methods for etching films comprising transition metals. Certain methods involve activating a substrate surface comprising at least one transition metal, wherein activation of the substrate surface comprises exposing the substrate surface to heat, a plasma, an oxidizing environment, or a halide transfer agent to provide an activated substrate surface; and exposing the activated substrate surface to a reagent comprising a Lewis base or pi acid to provide a vapor phase coordination complex comprising one or more atoms of the transition metal coordinated to one or more ligands from the reagent. Certain other methods provide selective etching from a multi-layer substrate comprising two or more of a layer of Co, a layer of Cu and a layer of Ni.

公开(公告)号：US20170096740A1

公开(公告)日：2017-04-06

申请号：US15383556

申请日：2016-12-19

Applicant: Applied Materials, Inc.

Inventor： Benjamin Schmiege ,  Nitin K. Ingle ,  Srinivas D. Nemani ,  Jeffrey W. Anthis ,  Xikun Wang ,  Jie Liu ,  David Benjaminson

IPC: C23F1/12 ,  H01J37/32

CPC classification number: C23F1/12 ,  C23F4/00 ,  C30B33/12 ,  H01J37/32009 ,  H01J2237/334

Abstract: Provided are methods for etching films comprising transition metals which help to minimize higher etch rates at the grain boundaries of polycrystalline materials. Certain methods pertain to amorphization of the polycrystalline material, other pertain to plasma treatments, and yet other pertain to the use of small doses of halide transfer agents in the etch process.

公开(公告)号：US09528183B2

公开(公告)日：2016-12-27

申请号：US14255443

申请日：2014-04-17

Applicant: Applied Materials, Inc.

Inventor： Kai Wu ,  Bo Zheng ,  Sang Ho Yu ,  Avgerinos V. Gelatos ,  Bhushan N. Zope ,  Jeffrey Anthis ,  Benjamin Schmiege

IPC: C25F1/00 ,  C23C16/44 ,  H01J37/32 ,  B08B9/00

CPC classification number: C23C16/4405 ,  B08B9/00 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32862

Abstract: Implementations described herein generally relate to methods and apparatus for in-situ removal of unwanted deposition buildup from one or more interior surfaces of a semiconductor substrate processing chamber. In one implementation, a method for removing cobalt or cobalt containing deposits from one or more interior surfaces of a substrate processing chamber after processing a substrate disposed in the substrate processing chamber is provided. The method comprises forming a reactive species from the fluorine containing cleaning gas mixture, permitting the reactive species to react with the cobalt and/or the cobalt containing deposits to form cobalt fluoride in a gaseous state and purging the cobalt fluoride in gaseous state out of the substrate processing chamber.

Abstract translation: 本文描述的实施方式一般涉及用于从半导体衬底处理室的一个或多个内表面原位去除不想要的沉积累积的方法和装置。 在一个实施方式中，提供了在处理设置在基板处理室中的基板之后从基板处理室的一个或多个内表面去除含钴或钴的沉积物的方法。 该方法包括从含氟清洗气体混合物中形成反应性物质，使反应物质与钴和/或含钴沉积物反应形成气态氟化钴，并将氟化氢以气态吹扫出来 基板处理室。

公开(公告)号：US20150194298A1

公开(公告)日：2015-07-09

申请号：US14587131

申请日：2014-12-31

Applicant: Applied Materials, Inc.

Inventor： Yu Lei ,  Srinivas Gandikota ,  Seshadri Ganguli ,  Bo Zheng ,  Rajkumar Jakkaraju ,  Martin Jeff Salinas ,  Benjamin Schmiege

IPC: H01L21/02 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/3205

CPC classification number: H01L21/0228 ,  C23C16/45551 ,  H01L21/0217 ,  H01L21/02175 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02194 ,  H01L21/28562 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/32051 ,  H01L21/32136

Abstract: Provided are atomic layer deposition methods to deposit a film using a circular batch processing chamber with a plurality of sections separated by gas curtains so that each section independently has a process condition.

Abstract translation: 提供了使用具有由气帘分开的多个部分的圆形间歇处理室沉积膜的原子层沉积方法，使得每个部分独立地具有工艺条件。