公开(公告)号：US11527408B2

公开(公告)日：2022-12-13

申请号：US16867095

申请日：2020-05-05

Applicant: Applied Materials, Inc.

Inventor： Tzu-shun Yang ,  Rui Cheng ,  Karthik Janakiraman ,  Zubin Huang ,  Diwakar Kedlaya ,  Meenakshi Gupta ,  Srinivas Guggilla ,  Yung-chen Lin ,  Hidetaka Oshio ,  Chao Li ,  Gene Lee

IPC: H01L21/033 ,  H01L21/311 ,  H01L21/3213

Abstract: The present disclosure provides forming nanostructures utilizing multiple patterning process with good profile control and feature transfer integrity. In one embodiment, a method for forming features on a substrate includes forming a first mandrel layer on a material layer disposed on a substrate. A first spacer layer is conformally formed on sidewalls of the first mandrel layer, wherein the first spacer layer comprises a doped silicon material. The first mandrel layer is selectively removed while keeping the first spacer layer. A second spacer layer is conformally formed on sidewalls of the first spacer layer and selectively removing the first spacer layer while keeping the second spacer layer.

公开(公告)号：US20180076049A1

公开(公告)日：2018-03-15

申请号：US15814248

申请日：2017-11-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Gene Lee ,  Lucy Chen

IPC: H01L21/311 ,  H01L21/67 ,  C23C16/50 ,  H01L21/033 ,  H01L21/02 ,  C23C16/52

CPC classification number: H01L21/31133 ,  C23C16/50 ,  C23C16/52 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31144 ,  H01L21/67069 ,  H01L27/1157 ,  H01L27/11575 ,  H01L27/11582

Abstract: A hard mask layer is deposited on a feature layer over a substrate. The hard mask layer comprises an organic mask layer. An opening in the organic mask layer is formed using a first gas comprising a halogen element at a first temperature greater than a room temperature to expose a portion of the feature layer. In one embodiment, a gas comprising a halogen element is supplied to a chamber. An organic mask layer on an insulating layer over a substrate is etched using the halogen element at a first temperature to form an opening to expose a portion of the insulating layer.

公开(公告)号：US09054045B2

公开(公告)日：2015-06-09

申请号：US14142028

申请日：2013-12-27

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT ,  Applied Materials, Inc.

Inventor： Nicolas Posseme ,  Gene Lee

IPC: H01L21/308 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01L21/3086 ,  H01L21/3081 ,  H01L21/31122 ,  H01L21/31144 ,  H01L21/32139

Abstract: According to one embodiment, the invention relates to a method for the anisotropic etching of patterns in at least one layer to be etched through a hard mask comprising carbon in an inductive-coupling plasma etching reactor (ICP), the method being characterized in that the hard mask is made from boron doped with carbon (B:C), and in that, prior to the anisotropic etching of the patterns in said layer to be etched through the hard mask of carbon-doped boron (B:C), the following steps are performed: realization of an intermediate hard mask situated on a layer of carbon-doped boron intended to form the hard mask made from carbon-doped boron (B:C), etching of the layer of carbon-doped boron (B:C) through the intermediate hard mask in order to form the hard mask made from carbon-doped boron (B:C), the realization of the intermediate hard mask and the etching of the hard mask made from carbon-doped boron (B:C) being done in said inductive coupling plasma etching reactor (ICP).

Abstract translation: 根据一个实施例，本发明涉及一种用于在电感耦合等离子体蚀刻反应器（ICP）中通过包含碳的硬掩模在至少一层中蚀刻图案的各向异性蚀刻的方法，其特征在于， 硬掩模由掺杂碳（B：C）的硼制成，并且因为在通过碳掺杂硼（B：C）的硬掩模蚀刻所述待蚀刻层中的图案的各向异性蚀刻之前， 执行步骤：实现位于用于形成由碳掺杂硼（B：C）制成的硬掩模的碳掺杂硼层上的中间硬掩模，蚀刻碳掺杂硼（B：C ）通过中间硬掩模形成由碳掺杂硼（B：C）制成的硬掩模，中间硬掩模的实现以及由碳掺杂硼（B：C）制成的硬掩模的蚀刻， 在所述电感耦合等离子体蚀刻反应器（ICP）中完成。