公开(公告)号：US11527408B2

公开(公告)日：2022-12-13

申请号：US16867095

申请日：2020-05-05

Applicant: Applied Materials, Inc.

Inventor： Tzu-shun Yang ,  Rui Cheng ,  Karthik Janakiraman ,  Zubin Huang ,  Diwakar Kedlaya ,  Meenakshi Gupta ,  Srinivas Guggilla ,  Yung-chen Lin ,  Hidetaka Oshio ,  Chao Li ,  Gene Lee

IPC: H01L21/033 ,  H01L21/311 ,  H01L21/3213

Abstract: The present disclosure provides forming nanostructures utilizing multiple patterning process with good profile control and feature transfer integrity. In one embodiment, a method for forming features on a substrate includes forming a first mandrel layer on a material layer disposed on a substrate. A first spacer layer is conformally formed on sidewalls of the first mandrel layer, wherein the first spacer layer comprises a doped silicon material. The first mandrel layer is selectively removed while keeping the first spacer layer. A second spacer layer is conformally formed on sidewalls of the first spacer layer and selectively removing the first spacer layer while keeping the second spacer layer.

公开(公告)号：US12211693B2

公开(公告)日：2025-01-28

申请号：US17712955

申请日：2022-04-04

Applicant: Applied Materials, Inc.

Inventor： Chao Li ,  Gene Lee

IPC: H01L21/033 ,  H01L21/311

Abstract: A method for forming a metal containing feature includes performing a deposition process, the deposition process comprising conformally depositing an over layer on top surfaces of a patterned mandrel layer and over a spacer layer on sidewalls of the patterned mandrel layer, and performing an etch process, the etch process comprising removing the over layer from the top surfaces of the patterned mandrel layer and shoulder portions of the spacer layer, and removing the shoulder portions of the spacer layer, using a fluorine containing etching gas.

公开(公告)号：US11315787B2

公开(公告)日：2022-04-26

申请号：US16821759

申请日：2020-03-17

Applicant: Applied Materials, Inc.

Inventor： Tzu-shun Yang ,  Rui Cheng ,  Karthik Janakiraman ,  Zubin Huang ,  Diwakar Kedlaya ,  Meenakshi Gupta ,  Srinivas Guggilla ,  Yung-chen Lin ,  Hidetaka Oshio ,  Chao Li ,  Gene Lee

IPC: H01L21/033 ,  H01L21/311 ,  H01L21/3213

Abstract: The present disclosure provides forming nanostructures utilizing multiple patterning process with good profile control and feature transfer integrity. In one embodiment, a method for forming features on a substrate includes forming a mandrel layer on a substrate, conformally forming a spacer layer on the mandrel layer, wherein the spacer layer is a doped silicon material, and patterning the spacer layer. In another embodiment, a method for forming features on a substrate includes conformally forming a spacer layer on a mandrel layer on a substrate, wherein the spacer layer is a doped silicon material, selectively removing a portion of the spacer layer using a first gas mixture, and selectively removing the mandrel layer using a second gas mixture different from the first gas mixture.