公开(公告)号：US20220411918A1

公开(公告)日：2022-12-29

申请号：US17361231

申请日：2021-06-28

Applicant: Applied Materials, Inc.

Inventor： Chandan Das ,  Susmit Singha Roy ,  Bhaskar Jyoti Bhuyan ,  John Sudijono ,  Abhijit Basu Mallick ,  Mark Saly

IPC: C23C16/30 ,  C23C16/06 ,  C23C16/448 ,  C23C16/04

Abstract: Transition metal dichalcogenide films and methods for depositing transition metal dichalcogenide films on a substrate are described. Methods for converting transition metal oxide films to transition metal dichalcogenide films are also described. The substrate is exposed to a precursor and a chalcogenide reactant to form the transition metal dichalcogenide film. The exposures can be sequential or simultaneous.

公开(公告)号：US11473198B2

公开(公告)日：2022-10-18

申请号：US16752618

申请日：2020-01-25

Applicant: Applied Materials, Inc.

Inventor： Thomas Knisley ,  Mark Saly

IPC: C07F5/00 ,  C23C16/455 ,  C09D1/00 ,  C23C16/18 ,  C23C16/32 ,  C23C16/44 ,  C23C16/38 ,  C23C16/30 ,  C23C16/40 ,  C23C16/34 ,  C23C16/42 ,  C23C16/36 ,  C08F4/54 ,  C08F136/02

Abstract: Described are lanthanide-containing metal coordination complexes which may be used as precursors in thin film depositions, e.g. atomic layer deposition processes. More specifically, described are homoleptic lanthanide-aminoalkoxide metal coordination complexes, lanthanide-carbohydrazide metal coordination complexes, and lanthanide-diazadiene metal coordination complexes. Additionally, methods for depositing lanthanide-containing films through an atomic layer deposition process are described.

公开(公告)号：US20220259734A1

公开(公告)日：2022-08-18

申请号：US17176984

申请日：2021-02-16

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Lakmal C. Kalutarage ,  Thomas Knisley

IPC: C23C16/455 ,  C07F7/00 ,  C07F7/22 ,  C07F7/02 ,  C07F7/30 ,  C23C16/18

Abstract: Methods of forming a metal film having a metal halide with a reducing agent are disclosed. The reducing agent, the reducing agent includes a group IV element containing heterocyclic compound, a radical initiator, an alkly alane, a diborene species and/or a Sn(II) compound.

公开(公告)号：US11371136B2

公开(公告)日：2022-06-28

申请号：US16647794

申请日：2018-09-19

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Mark Saly ,  David Thompson ,  Lakmal C. Kalutarage ,  Rana Howlader

IPC: H01L21/31 ,  C23C16/04 ,  C23C16/455 ,  H01L21/02

Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing a substrate to a blocking molecule to selectively deposit a blocking layer on the first surface. The blocking layer is exposed to a polymer initiator to form a networked blocking layer. A layer is selectively formed on the second surface. The blocking layer inhibits deposition on the first surface. The networked layer may then optionally be removed.

公开(公告)号：US20210217610A1

公开(公告)日：2021-07-15

申请号：US17196601

申请日：2021-03-09

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Mark Saly ,  David Thompson ,  Li-Qun Xia

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/02 ,  C23C16/40

Abstract: Methods for depositing metal oxide layers on metal surfaces are described. The methods include exposing a substrate to separate doses of a metal precursor, which does not contain metal-oxygen bonds, and an alcohol. These methods do not oxidize the underlying metal layer.

公开(公告)号：US20200234943A1

公开(公告)日：2020-07-23

申请号：US16632164

申请日：2018-07-17

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Lakmal C. Kalutarage ,  Thomas Knisley

IPC: H01L21/02 ,  H01L21/311 ,  C23C16/30 ,  C23C16/455 ,  C23C16/02

Abstract: Methods of enhancing selective deposition are described. In some embodiments, a blocking layer is deposited on a metal surface before deposition of a dielectric. In some embodiments, a metal surface is functionalized to enhance or decrease its reactivity.

公开(公告)号：US20200216949A1

公开(公告)日：2020-07-09

申请号：US16647794

申请日：2018-09-19

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Mark Saly ,  David Thompson ,  Lakmal C. Kalutarage ,  Rana Howlader

IPC: C23C16/04 ,  C23C16/455 ,  H01L21/02

Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing a substrate to a blocking molecule to selectively deposit a blocking layer on the first surface. The blocking layer is exposed to a polymer initiator to form a networked blocking layer. A layer is selectively formed on the second surface. The blocking layer inhibits deposition on the first surface. The networked layer may then optionally be removed.

公开(公告)号：US20200071825A1

公开(公告)日：2020-03-05

申请号：US16550523

申请日：2019-08-26

Applicant: Applied Materials, Inc.

Inventor： Lakmal C. Kalutarage ,  Jeffrey W. Anthis ,  Mark Saly ,  David Thompson ,  Yongjing Lin ,  Shih Chung Chen

IPC: C23C16/455 ,  C23C16/32 ,  C23C28/00

Abstract: Methods of depositing a metal carbide film by exposing a substrate surface to a halide precursor and an aluminum reactant are described. The halide precursor comprises a compound of general formula (I) MXyRn, wherein M is a metal, X is a halogen selected from Cl, Br, F or I, y is from 1 to 6, R is selected from alkyl, CO, and cyclopentadienyl, and n is from 0 to 6. The aluminum reactant comprises a compound of general formula (II) Al(CH2AR1R2R3)3, wherein A is C, Si, or Ge, each of R1, R2, and R3 is independently alkyl or comprises substantially no β-hydrogen.

公开(公告)号：US20200002814A1

公开(公告)日：2020-01-02

申请号：US16456964

申请日：2019-06-28

Applicant: Applied Materials, Inc.

Inventor： Thomas Knisley ,  Mark Saly ,  David Thompson

IPC: C23C16/455 ,  C09D1/00 ,  C01G19/02 ,  C01B21/06 ,  C01B32/914 ,  C01B35/04 ,  C01B33/06 ,  C23C16/30

Abstract: Tin containing precursors and methods of forming tin-containing thin films are described. The tin precursor has a tin-diazadiene bond and is homoleptic or heteroleptic. A suitable reactant is used to provide one of a metallic tin film or a film comprising one or more of an oxide, nitride, carbide, boride and/or silicide. Methods of forming ternary materials comprising tin with two or more of oxygen, nitrogen, carbon, boron, silicon, titanium, ruthenium and/or tungsten are also described.

公开(公告)号：US10354861B2

公开(公告)日：2019-07-16

申请号：US15804503

申请日：2017-11-06

Applicant: Applied Materials, Inc.

Inventor： Mark Saly ,  David Thompson ,  Lakmal C. Kalutarage

IPC: C23C16/30 ,  H01L21/02 ,  C23C16/56 ,  C23C16/455

Abstract: Methods for the deposition of a SiCON film by molecular layer deposition using a multi-functional amine and a silicon containing precursor having a reactive moiety.