-
公开(公告)号：US11430641B1
公开(公告)日：2022-08-30
申请号：US17367089
申请日：2021-07-02
Applicant: Applied Materials, Inc.
Inventor： Vivien Chua , Prashant Kumar Kulshreshtha , Zhijun Jiang , Fang Ruan , Diwakar Kedlaya
Abstract: Exemplary methods of semiconductor processing may include forming a plasma of a fluorine-containing precursor. The methods may include performing a chamber clean in a processing region of a semiconductor processing chamber. The processing region may be at least partially defined between a faceplate and a substrate support. The methods may include generating aluminum fluoride during the chamber clean. The methods may include contacting surfaces within the processing region with a carbon-containing precursor. The methods may include volatilizing aluminum fluoride from the surfaces of the processing region.
-
公开(公告)号：US20220127722A1
公开(公告)日：2022-04-28
申请号：US17077959
申请日：2020-10-22
Applicant: Applied Materials, Inc.
Inventor： Jiheng Zhao , Abdul Aziz Khaja , Prashant Kumar Kulshreshtha , Fang Ruan
IPC: C23C16/44
Abstract: Exemplary semiconductor processing methods may include forming a seasoning film on a heater of a processing chamber by a first deposition process. The method may include performing a hardmask deposition process in the processing chamber. The method may include cleaning the processing chamber by a first cleaning process. The method may include monitoring a gas produced during the first cleaning process. The method may include cleaning the processing chamber using a second cleaning process different from the first cleaning process. The method may also include monitoring the gas produced during the second cleaning process.
-
公开(公告)号：US20210202218A1
公开(公告)日：2021-07-01
申请号：US16728552
申请日：2019-12-27
Applicant: Applied Materials, Inc.
Inventor： Venkata Sharat Chandra Parimi , Satish Radhakrishnan , Xiaoquan Min , Sarah Michelle Bobek , Sungwon Ha , Prashant Kumar Kulshreshtha , Vinay Prabhakar
Abstract: Exemplary semiconductor processing chambers may include a chamber body including sidewalls and a base. The chambers may include a substrate support extending through the base of the chamber body. The substrate support may include a support platen configured to support a semiconductor substrate. The substrate support may include a shaft coupled with the support platen. The substrate support may include a shield coupled with the shaft of the substrate support. The shield may include a plurality of apertures defined through the shield. The substrate support may include a block seated in an aperture of the shield.
-
公开(公告)号：US20210156028A1
公开(公告)日：2021-05-27
申请号：US16698448
申请日：2019-11-27
Applicant: Applied Materials, Inc.
Inventor： Fang Ruan , Prashant Kumar Kulshreshtha , Jiheng Zhao , Diwakar Kedlaya
IPC: C23C16/455 , H01L21/3213 , H01J37/32
Abstract: Exemplary semiconductor processing chambers may include a gasbox. The chambers may include a substrate support. The chambers may include a blocker plate positioned between the gasbox and the substrate support. The blocker plate may define a plurality of apertures through the plate. The chambers may include a faceplate positioned between the blocker plate and substrate support. The faceplate may be characterized by a first surface facing the blocker plate and a second surface opposite the first surface. The second surface of the faceplate and the substrate support may at least partially define a processing region within the semiconductor processing chamber. The faceplate may be characterized by a central axis, and the faceplate may define a plurality of apertures through the faceplate. The faceplate may define a central recess about the central axis extending from the second surface of the faceplate to a depth less than a thickness of the faceplate.
-
公开(公告)号：US10930475B2
公开(公告)日：2021-02-23
申请号：US16188722
申请日：2018-11-13
Applicant: Applied Materials, Inc.
Inventor： Prashant Kumar Kulshreshtha , Ziqing Duan , Abdul Aziz Khaja , Zheng John Ye , Amit Kumar Bansal
IPC: H01J37/32 , C23C16/458 , H01L21/683 , C23C16/02 , C23C16/34 , C23C16/36 , C23C16/44 , C23C16/509
Abstract: The present disclosure generally relates to processing chamber seasoning layers having a graded composition. In one example, the seasoning layer is a boron-carbon-nitride (BCN) film. The BCN film may have a greater composition of boron at the base of the film. As the BCN film is deposited, the boron concentration may approach zero, while the relative carbon and nitrogen concentration increases. The BCN film may be deposited by initially co-flowing a boron precursor, a carbon precursor, and a nitrogen precursor. After a first period of time, the flow rate of the boron precursor may be reduced. As the flow rate of boron precursor is reduced, RF power may be applied to generate a plasma during deposition of the seasoning layer.
-
Patent Agency Ranking
公开(公告)号：US09837265B2
公开(公告)日：2017-12-05
申请号：US15192732
申请日：2016-06-24
Applicant: Applied Materials, Inc.
Inventor： Prashant Kumar Kulshreshtha , Sudha Rathi , Praket P. Jha , Saptarshi Basu , Kwangduk Douglas Lee , Martin J. Seamons , Bok Hoen Kim , Ganesh Balasubramanian , Ziqing Duan , Lei Jing , Mandar B. Pandit
IPC: H01L21/02 , C23C16/455 , C23C16/458 , C23C16/46 , H01L21/033 , H01L21/66 , C23C16/26 , C23C16/04 , H01L21/311
CPC classification number: H01L21/02274 , C23C16/04 , C23C16/26 , C23C16/455 , C23C16/45502 , C23C16/45508 , C23C16/45565 , C23C16/458 , C23C16/4584 , C23C16/4586 , C23C16/46 , H01L21/02115 , H01L21/0337 , H01L21/31144 , H01L22/12
Abstract: Methods for modulating local stress and overlay error of one or more patterning films may include modulating a gas flow profile of gases introduced into a chamber body, flowing gases within the chamber body toward a substrate, rotating the substrate, and unifying a center-to-edge temperature profile of the substrate by controlling the substrate temperature with a dual zone heater. A chamber for depositing a film may include a chamber body comprising one or more processing regions. The chamber body may include a gas distribution assembly having a blocker plate for delivering gases into the one or more processing regions. The blocker plate may have a first region and a second region, and the first region and second region each may have a plurality of holes. The chamber body may have a dual zone heater.
-
公开(公告)号：US20230390811A1
公开(公告)日：2023-12-07
申请号：US17833408
申请日：2022-06-06
Applicant: Applied Materials, Inc.
Inventor： Khokan Chandra Paul , Truong Van Nguyen , Kelvin Chan , Diwakar Kedlaya , Anantha K. Subramani , Abdul Aziz Khaja , Vijet Patil , Yusheng Fang , Liangfa Hu , Prashant Kumar Kulshreshtha
CPC classification number: B08B7/0035 , H01J37/32449 , H01J37/32357 , H01J37/32862 , B08B5/00 , B08B9/0328 , H01J2237/334 , H01J2237/332 , B08B2209/032
Abstract: Exemplary semiconductor processing systems may include a processing chamber defining a processing region. The systems may include a foreline coupled with the processing chamber, the foreline defining a fluid conduit. The systems may include a radical generator having an inlet and an outlet. The outlet may be fluidly coupled with the foreline. The systems may include a gas source fluidly coupled with the inlet of the radical generator. The systems may include a throttle valve coupled with the foreline downstream of the radical generator.
-
公开(公告)号：US11821082B2
公开(公告)日：2023-11-21
申请号：US17081488
申请日：2020-10-27
Applicant: Applied Materials, Inc.
Inventor： Xiaoquan Min , Byung Ik Song , Hyung Je Woo , Venkata Sharat Chandra Parimi , Prashant Kumar Kulshreshtha , Kwangduk Lee
CPC classification number: C23C16/4404 , C23C16/4405 , H01J37/32477 , H01J37/32862
Abstract: Exemplary methods of semiconductor processing may include forming a silicon oxide material on exposed surfaces of a processing region of a semiconductor processing chamber. The methods may include forming a silicon nitride material overlying the silicon oxide material. The methods may include performing a deposition process on a semiconductor substrate disposed within the processing region of the semiconductor processing chamber. The methods may include performing a chamber cleaning process.
-
公开(公告)号：US11682574B2
公开(公告)日：2023-06-20
申请号：US16677491
申请日：2019-11-07
Applicant: Applied Materials, Inc.
Inventor： Abdul Aziz Khaja , Venkata Sharat Chandra Parimi , Sarah Michelle Bobek , Prashant Kumar Kulshreshtha , Vinay K. Prabhakar
IPC: H01L21/683 , H01J37/32
CPC classification number: H01L21/6833 , H01J37/32642 , H01J37/32724
Abstract: Aspects of the present disclosure relate to one or more implementations of a substrate support for a processing chamber. In one implementation, a substrate support includes a body having a center, and a support surface on the body configured to at least partially support a substrate. The substrate support includes a first angled wall that extends upward and radially outward from the support surface, and a first upper surface disposed above the support surface. The substrate support also includes a second angled wall that extends upward and radially outward from the first upper surface, the first upper surface extending between the first angled wall and the second angled wall. The substrate support also includes a second upper surface extending from the second angled wall. The second upper surface is disposed above the first upper surface.
-
公开(公告)号：US11600470B2
公开(公告)日：2023-03-07
申请号：US16728552
申请日：2019-12-27
Applicant: Applied Materials, Inc.
Inventor： Venkata Sharat Chandra Parimi , Satish Radhakrishnan , Xiaoquan Min , Sarah Michelle Bobek , Sungwon Ha , Prashant Kumar Kulshreshtha , Vinay Prabhakar
Abstract: Exemplary semiconductor processing chambers may include a chamber body including sidewalls and a base. The chambers may include a substrate support extending through the base of the chamber body. The substrate support may include a support platen configured to support a semiconductor substrate. The substrate support may include a shaft coupled with the support platen. The substrate support may include a shield coupled with the shaft of the substrate support. The shield may include a plurality of apertures defined through the shield. The substrate support may include a block seated in an aperture of the shield.
-
-
-
-
-
-
-
-
-
Search Results
49
records
(took 0.023 seconds)
