公开(公告)号：US09287095B2

公开(公告)日：2016-03-15

申请号：US14108692

申请日：2013-12-17

Applicant: Applied Materials, Inc.

Inventor： Andrew Nguyen ,  Kartik Ramaswamy ,  Srinivas Nemani ,  Bradley Howard ,  Yogananda Sarode Vishwanath

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01J37/32495 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32532 ,  H01J37/32568 ,  H01J37/32807 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67069

Abstract: An exemplary semiconductor processing system may include a remote plasma source coupled with a processing chamber having a top plate. An inlet assembly may be used to couple the remote plasma source with the top plate and may include a mounting assembly, which in embodiments may include at least two components. The inlet assembly may further include a precursor distribution assembly defining a plurality of distribution channels fluidly coupled with an injection port.

Abstract translation: 示例性半导体处理系统可以包括与具有顶板的处理室耦合的远程等离子体源。 入口组件可以用于将远程等离子体源与顶板耦合，并且可以包括安装组件，其在实施例中可以包括至少两个组件。 入口组件还可以包括限定与注射口流体连接的多个分配通道的前体分布组件。

公开(公告)号：US11110383B2

公开(公告)日：2021-09-07

申请号：US16897045

申请日：2020-06-09

Applicant: Applied Materials, Inc.

Inventor： Adib Khan ,  Qiwei Liang ,  Sultan Malik ,  Srinivas Nemani ,  Rafika Smati ,  Joseph Ng ,  John O'Hehir

IPC: B01D53/04 ,  H01L21/67 ,  H01L21/673

Abstract: Embodiments of the present disclosure relate to gas abatement apparatus and effluent management. The apparatus described herein include a high pressure process chamber and a containment chamber surrounding the process chamber. A high pressure fluid delivery module is in fluid communication with the high pressure process chamber and is configured to deliver a high pressure fluid to the process chamber. An effluent management module includes a muffler assembly to effluent pressure reduction and a plurality of scrubbers provide for treatment of effluent.

公开(公告)号：US10943779B2

公开(公告)日：2021-03-09

申请号：US15356475

申请日：2016-11-18

Applicant: APPLIED MATERIALS, INC.

Inventor： Ellie Yieh ,  Ludovic Godet ,  Srinivas Nemani ,  Er-Xuan Ping ,  Gary Dickerson

IPC: H01L21/00 ,  H01L21/02 ,  H01L21/67 ,  C23C14/02 ,  C23C14/04 ,  C23C16/02 ,  C23C16/04 ,  C23C16/455 ,  C23C16/50 ,  H01J37/32 ,  H01L21/285 ,  H01L21/311 ,  H01L21/3213

Abstract: Embodiments include methods and systems of 3D structure fill. In one embodiment, a method of filling a trench in a wafer includes performing directional plasma treatment with an ion beam at an angle with respect to a sidewall of the trench to form a treated portion of the sidewall and an untreated bottom of the trench. A material is deposited in the trench. The deposition rate of the material on the treated portion of the sidewall is different than a second deposition rate on the untreated bottom of the trench. In one embodiment, a method includes depositing a material on the wafer, filling a bottom of the trench and forming a layer on a sidewall of the trench and a top surface adjacent to the trench. The method includes etching the layer with an ion beam at an angle with respect to the sidewall.

公开(公告)号：US10549324B2

公开(公告)日：2020-02-04

申请号：US15974000

申请日：2018-05-08

Applicant: APPLIED MATERIALS, INC.

Inventor： Sriskantharajah Thirunavukarasu ,  Jen Sern Lew ,  Arvind Sundarrajan ,  Srinivas Nemani

IPC: H01L21/67 ,  B08B5/02 ,  B08B6/00 ,  H01L21/683

Abstract: Embodiments of methods and apparatus for removing particles from a surface of a substrate, such as from the backside of the substrate, are provided herein. In some embodiments, an apparatus for removing particles from a surface of a substrate includes: a substrate handler to expose the surface of the substrate; a particle separator to separate particles from the exposed surface of the substrate; a particle transporter to transport the separated particles; and a particle collector to collect the transported particles.

公开(公告)号：US10475655B2

公开(公告)日：2019-11-12

申请号：US15988820

申请日：2018-05-24

Applicant: Applied Materials, Inc. ,  The Regents of the University of California

Inventor： Raymond Hung ,  Namsung Kim ,  Srinivas Nemani ,  Ellie Yieh ,  Jong Choi ,  Christopher Ahles ,  Andrew Kummel

IPC: H01L21/44 ,  H01L21/285 ,  H01L21/324

Abstract: Embodiments of the disclosure relate to selective metal silicide deposition methods. In one embodiment, a substrate having a silicon containing surface is heated and the silicon containing surface is hydrogen terminated. The substrate is exposed to sequential cycles of a MoF6 precursor and a Si2H6 precursor which is followed by an additional Si2H6 overdose exposure to selectively deposit a MoSix material comprising MoSi2 on the silicon containing surface of the substrate.

公开(公告)号：US10096496B2

公开(公告)日：2018-10-09

申请号：US15495832

申请日：2017-04-24

Applicant: Applied Materials, Inc.

Inventor： Dmitry Lubomirsky ,  Srinivas Nemani ,  Ellie Yieh ,  Sergey G. Belostotskiy

IPC: H01L21/76 ,  H01L21/67 ,  H01L21/3065 ,  H01J37/32 ,  C23C16/02 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/683 ,  H01L21/02

Abstract: Methods and process chambers for etching of low-k and other dielectric films are described. For example, a method includes modifying portions of the low-k dielectric layer with a plasma process. The modified portions of the low-k dielectric layer are etched selectively over a mask layer and unmodified portions of the low-k dielectric layer. Etch chambers having multiple chamber regions for alternately generating distinct plasmas are described. In embodiments, a first charge coupled plasma source is provided to generate an ion flux to a workpiece in one operational mode, while a secondary plasma source is provided to provide reactive species flux without significant ion flux to the workpiece in another operational mode. A controller operates to cycle the operational modes repeatedly over time to remove a desired cumulative amount of the dielectric material.

公开(公告)号：US10096466B2

公开(公告)日：2018-10-09

申请号：US15073444

申请日：2016-03-17

Applicant: APPLIED MATERIALS, INC.

Inventor： Jun Xue ,  Ludovic Godet ,  Srinivas Nemani ,  Michael W. Stowell ,  Qiwei Liang ,  Douglas A. Buchberger

IPC: H01L21/00 ,  H01L21/02 ,  H01L21/768

Abstract: Methods of processing a substrate are provided herein. In some embodiments, a method of processing a substrate disposed in a processing chamber includes: (a) depositing a layer of material on a substrate by exposing the substrate to a first reactive species generated from a remote plasma source and to a first precursor, wherein the first reactive species reacts with the first precursor; and (b) treating all, or substantially all, of the deposited layer of material by exposing the substrate to a plasma generated within the processing chamber from a second plasma source; wherein at least one of the remote plasma source or the second plasma source is pulsed to control periods of depositing and periods of treating.

公开(公告)号：US09865484B1

公开(公告)日：2018-01-09

申请号：US15197060

申请日：2016-06-29

Applicant: Applied Materials, Inc.

Inventor： Bhargav Citla ,  Chentsau Ying ,  Srinivas Nemani ,  Viachslav Babayan ,  Michael Stowell

IPC: H01L21/67 ,  H01L21/683 ,  H01L21/687 ,  H01L21/311 ,  H01L21/3115

CPC classification number: H01L21/67069 ,  H01J37/32146 ,  H01J37/32706 ,  H01J2237/334 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/3115 ,  H01L21/6831 ,  H01L21/6833 ,  H01L21/68735

Abstract: Semiconductor systems and methods may include methods of performing selective etches that include modifying a material on a semiconductor substrate. The substrate may have at least two exposed materials on a surface of the semiconductor substrate. The methods may include forming a low-power plasma within a processing chamber housing the semiconductor substrate. The low-power plasma may be a radio-frequency (“RF”) plasma, which may be at least partially formed by an RF bias power operating between about 10 W and about 100 W in embodiments. The RF bias power may also be pulsed at a frequency below about 5,000 Hz. The methods may also include etching one of the at least two exposed materials on the surface of the semiconductor substrate at a higher etch rate than a second of the at least two exposed materials on the surface of the semiconductor substrate.

公开(公告)号：US20180005850A1

公开(公告)日：2018-01-04

申请号：US15197060

申请日：2016-06-29

Applicant: Applied Materials, Inc.

Inventor： Bhargav Citla ,  Chentsau Ying ,  Srinivas Nemani ,  Viachslav Babayan ,  Michael Stowell

IPC: H01L21/67 ,  H01L21/683 ,  H01L21/3115 ,  H01L21/687 ,  H01L21/311

CPC classification number: H01L21/67069 ,  H01J37/32146 ,  H01J37/32706 ,  H01J2237/334 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/3115 ,  H01L21/6831 ,  H01L21/6833 ,  H01L21/68735

Abstract: Semiconductor systems and methods may include methods of performing selective etches that include modifying a material on a semiconductor substrate. The substrate may have at least two exposed materials on a surface of the semiconductor substrate. The methods may include forming a low-power plasma within a processing chamber housing the semiconductor substrate. The low-power plasma may be a radio-frequency (“RF”) plasma, which may be at least partially formed by an RF bias power operating between about 10 W and about 100 W in embodiments. The RF bias power may also be pulsed at a frequency below about 5,000 Hz. The methods may also include etching one of the at least two exposed materials on the surface of the semiconductor substrate at a higher etch rate than a second of the at least two exposed materials on the surface of the semiconductor substrate.

公开(公告)号：US09666414B2

公开(公告)日：2017-05-30

申请号：US13651074

申请日：2012-10-12

Applicant: Applied Materials, Inc.

Inventor： Dmitry Lubomirsky ,  Srinivas Nemani ,  Ellie Yieh ,  Sergey G. Belostotskiy

IPC: C23C14/24 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/67 ,  H01L21/683 ,  H01L21/02

CPC classification number: H01L21/67069 ,  C23C16/0245 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/32477 ,  H01J37/32532 ,  H01J37/32587 ,  H01J37/32715 ,  H01J2237/3341 ,  H01L21/02126 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/6831

Abstract: Methods and process chambers for etching of low-k and other dielectric films are described. For example, a method includes modifying portions of the low-k dielectric layer with a plasma process. The modified portions of the low-k dielectric layer are etched selectively over a mask layer and unmodified portions of the low-k dielectric layer. Etch chambers having multiple chamber regions for alternately generating distinct plasmas are described. In embodiments, a first charge coupled plasma source is provided to generate an ion flux to a workpiece in one operational mode, while a secondary plasma source is provided to provide reactive species flux without significant ion flux to the workpiece in another operational mode. A controller operates to cycle the operational modes repeatedly over time to remove a desired cumulative amount of the dielectric material.