公开(公告)号：US20240420984A1

公开(公告)日：2024-12-19

申请号：US18210328

申请日：2023-06-15

Applicant: Applied Materials, Inc.

Inventor： Andrew Nguyen ,  Yogananda Sarode Vishwanath ,  Tom K. Cho ,  Jennifer Y. Sun ,  Xue Yang Chang

IPC: H01L21/683 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/673

Abstract: An electrostatic chuck (ESC) including a ceramic body having a first surface with two or more regions defined on the first surface arranged concentrically with respect to each other on the first surface. Each region includes a retaining ring arranged on the first surface and defining an outer edge of the region, and structures arranged on the first surface and within the region configured to support a surface of a substrate when the substrate is retained by the electrostatic chuck. The ESC includes gas conduits configured to introduce a gas into the two or more regions through the ceramic body and to the first surface, and embedded electrodes within the ceramic body and arranged with respect to the first surface and configured to generate a retaining force on the surface of the substrate.

公开(公告)号：US12020965B2

公开(公告)日：2024-06-25

申请号：US17076024

申请日：2020-10-21

Applicant: Applied Materials, Inc.

Inventor： Andrew Nguyen ,  Sathya Swaroop Ganta ,  Kallol Bera ,  Canfeng Lai

IPC: C23C16/00 ,  C23C16/513 ,  H01J37/32 ,  H01L21/00 ,  H01L21/02 ,  H01L21/677

CPC classification number: H01L21/67709 ,  C23C16/513 ,  H01J37/3266 ,  H01L21/02274

Abstract: Embodiments of the present disclosure generally relate to semiconductor processing equipment, and more specifically to apparatus, e.g., magnet holding structures, that can be used with magnets during plasma processing of a substrate. In an embodiment, a magnet holding structure for a plasma-enhanced chemical vapor deposition chamber is provided. The magnet holding structure includes a top piece having a plurality of magnet retention members and a bottom piece having a plurality of magnet retention members. The top piece has a first inside edge and a first outside edge, and the bottom piece has a second inside edge and a second outside edge. The magnet holding structure further includes a plurality of casings. Each casing of the plurality of casings is configured to at least partially encapsulate a magnet, and each casing positioned between a magnet retention member of the top piece and a magnet retention member of the bottom piece.

公开(公告)号：US20210048108A1

公开(公告)日：2021-02-18

申请号：US16542798

申请日：2019-08-16

Applicant: APPLIED MATERIALS, INC.

Inventor： Andrew Nguyen ,  Yogananda Sarode Vishwanath ,  Xue Chang ,  Anilkumar Rayaroth ,  Chetan Naik ,  Balachandra Jatak Narayan

IPC: F16K1/42

Abstract: Embodiments of symmetric flow valves for use in a substrate processing chamber are provided herein. In some embodiments, a symmetric flow valve includes a valve body having sidewalls, a bottom plate, and a top plate that together define an interior volume, wherein the top plate includes one or more axisymmetrically disposed openings; a poppet disposed in the interior volume, wherein the poppet includes a central opening and a plurality of portions configured to selectively seal the one or more axisymmetrically disposed openings of the top plate when the symmetric flow valve is in a closed position; and a first actuator coupled to the poppet to position the poppet within the interior volume in at least an open position, where the poppet is spaced apart from the top plate to allow flow through the one or more axisymmetrically disposed openings of the top plate, and the closed position.

公开(公告)号：US10811233B2

公开(公告)日：2020-10-20

申请号：US15673403

申请日：2017-08-09

Applicant: APPLIED MATERIALS, INC.

Inventor： Andrew Nguyen ,  Xue Yang Chang ,  Haitao Wang ,  Kei-Yu Ko ,  Reza Sadjadi

IPC: H01J37/32

Abstract: Process chambers having a tunable showerhead and a tunable liner are disclosed herein. In some embodiments, a processing chamber includes a showerhead; a chamber liner; a first impedance circuit coupled to the showerhead to tune an impedance of the showerhead; a second impedance circuit coupled to the chamber liner to tune an impedance of the chamber liner; and a controller coupled to the first and second impedance circuits to control relative impedances of the showerhead and the chamber liner.

公开(公告)号：US20190330748A1

公开(公告)日：2019-10-31

申请号：US16505530

申请日：2019-07-08

Applicant: Applied Materials, Inc.

Inventor： Andrew Nguyen ,  Kenneth S. Collins ,  Kartik Ramaswamy

IPC: C23F1/08 ,  H01J37/32 ,  H05H1/46 ,  C23C14/28 ,  B01J12/00

Abstract: A gas distribution hub for a plasma reactor chamber has a nozzle includes an inner gas injection passage and an outer gas injection passage, each open to a bottom surface of the hub. For each of the inner and outer gas injection passages, multiple radial elevated feed lines have input ends at a periphery of the hub to receive gas and output ends overlying the respective gas injection passage. Respective axial drop lines connect the respective output ends of the radial elevated feed lines to the respective gas injection passages.

公开(公告)号：US10446418B2

公开(公告)日：2019-10-15

申请号：US14677901

申请日：2015-04-02

Applicant: Applied Materials, Inc.

Inventor： Andrew Nguyen ,  Yogananda Sarode Vishwanath ,  Tom K. Cho

IPC: C23C16/44 ,  H01L21/67 ,  H01J37/32

Abstract: The present disclosure generally relates to process chambers having modular design to provide variable process volume and improved flow conductance and uniformity. The modular design according to the present disclosure achieves improved process uniformity and symmetry with simplified chamber structure. The modular design further affords flexibility of performing various processes or processing substrates of various sizes by replacing one or more modules in a modular process chamber according to the present disclosure.

公开(公告)号：US10381247B2

公开(公告)日：2019-08-13

申请号：US15238604

申请日：2016-08-16

Applicant: Applied Materials, Inc.

Inventor： Nagendra V. Madiwal ,  Robert Irwin Decottignies ,  Andrew Nguyen ,  Paul B. Reuter ,  Angela R. Sico ,  Michael Kuchar ,  Travis Morey ,  Mitchell DiSanto

IPC: H01L21/67 ,  C23C14/56 ,  C23C16/44 ,  C23C16/455

Abstract: An electronic device manufacturing system may include a chamber port assembly that provides an interface between a transfer chamber and a process chamber. In some embodiments, the chamber port assembly may be configured to direct a flow of purge gas into a substrate transfer area of the chamber port assembly. In other embodiments, a process chamber and/or the transfer chamber may be configured to direct a flow of purge gas into the substrate transfer area. The flow of purge gas into a substrate transfer area may prevent and/or reduce migration of particulate matter from chamber hardware onto a substrate being transferred between the transfer chamber and a process chamber. Methods of assembling a chamber port assembly are also provided, as are other aspects.

公开(公告)号：US10170278B2

公开(公告)日：2019-01-01

申请号：US13833220

申请日：2013-03-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Andrew Nguyen ,  Kartik Ramaswamy ,  Yang Yang ,  Steven Lane

IPC: H01J37/32

Abstract: Embodiments of methods and apparatus for plasma processing are provided herein. In some embodiments, an inductively coupled plasma apparatus may include a bottom wall comprising a hub and a ring coupled to the hub by a capacitor, wherein the hub and the ring are each electrically conductive, and where the hub has a central opening aligned with a central axis of the inductively coupled plasma apparatus; a top wall spaced apart from and above the bottom wall, wherein the top wall has a central opening aligned with the central axis, and wherein the tope wall is electrically conductive; a sidewall electrically connecting the ring to the top wall; and a tube electrically connecting the hub to the top wall, the tube having a central opening aligned with the central axis.

公开(公告)号：US10017857B2

公开(公告)日：2018-07-10

申请号：US15144736

申请日：2016-05-02

Applicant: APPLIED MATERIALS, INC.

Inventor： Andrew Nguyen ,  Yang Yang ,  Kartik Ramaswamy ,  Steven Lane ,  Lawrence Wong

IPC: C23C16/00 ,  H01L21/306 ,  C23C16/505 ,  H01J37/32 ,  H01L21/687 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213

CPC classification number: C23C16/505 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32165 ,  H01J37/32715 ,  H01L21/68742 ,  H01L21/68785

Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, an apparatus for processing a substrate includes a process chamber having an internal processing volume disposed beneath a dielectric lid of the process chamber; a substrate support disposed in the process chamber and having a support surface to support a substrate; an inductive coil disposed above the dielectric lid to inductively couple RF energy into the internal processing volume to form a plasma above the substrate support; and a first inductive applicator ring coupled to a lift mechanism to position the first inductive applicator ring within the internal processing volume.

公开(公告)号：US09368370B2

公开(公告)日：2016-06-14

申请号：US14642340

申请日：2015-03-09

Applicant: Applied Materials, Inc.

Inventor： Sergey G. Belostotskiy ,  Chinh Dinh ,  Qingjun Zhou ,  Srinivas D. Nemani ,  Andrew Nguyen

IPC: H01L21/302 ,  H01L21/311 ,  H01L21/263 ,  H01J37/32

CPC classification number: H01L21/31116 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3244 ,  H01L21/263

Abstract: A method for etching a dielectric layer disposed on a substrate is provided. The method includes de-chucking the substrate from an electrostatic chuck in an etching processing chamber, and cyclically etching the dielectric layer while the substrate is de-chucked from the electrostatic chuck. The cyclical etching includes remotely generating a plasma in an etching gas mixture supplied into the etching processing chamber to etch the dielectric layer disposed on the substrate at a first temperature. Etching the dielectric layer generates etch byproducts. The cyclical etching also includes vertically moving the substrate towards a gas distribution plate in the etching processing chamber, and flowing a sublimation gas from the gas distribution plate towards the substrate to sublimate the etch byproducts. The sublimation is performed at a second temperature, wherein the second temperature is greater than the first temperature.

Abstract translation: 提供了一种用于蚀刻设置在基板上的电介质层的方法。 该方法包括在蚀刻处理室中从静电卡盘取下基板，并在基板从静电卡盘脱卡的同时循环蚀刻电介质层。 循环蚀刻包括在提供到蚀刻处理室中的蚀刻气体混合物中远程产生等离子体，以在第一温度下蚀刻设置在基板上的电介质层。 蚀刻介电层产生蚀刻副产物。 循环蚀刻还包括将衬底垂直移动到蚀刻处理室中的气体分配板，并且使升华气体从气体分配板朝向衬底流动以升华蚀刻副产物。 升华在第二温度下进行，其中第二温度大于第一温度。