公开(公告)号：US09728437B2

公开(公告)日：2017-08-08

申请号：US14612472

申请日：2015-02-03

Applicant: Applied Materials, Inc.

Inventor： Toan Q. Tran ,  Sultan Malik ,  Dmitry Lubomirsky ,  Shambhu N. Roy ,  Satoru Kobayashi ,  Tae Seung Cho ,  Soonam Park ,  Shankar Venkataraman

IPC: H01L21/683 ,  H01L21/3065 ,  H01L21/67

CPC classification number: H01L21/6833 ,  H01L21/3065 ,  H01L21/67103

Abstract: A wafer chuck assembly includes a puck, a shaft and a base. An insulating material defines a top surface of the puck, a heater element is embedded within the insulating material, and a conductive plate lies beneath the insulating material. The shaft includes a housing coupled with the plate, and electrical connectors for the heater elements and the electrodes. A conductive base housing couples with the shaft housing, and the connectors pass through a terminal block within the base housing. A method of plasma processing includes loading a workpiece onto a chuck having an insulating top surface, providing a DC voltage differential across two electrodes within the top surface, heating the chuck by passing current through heater elements, providing process gases in a chamber surrounding the chuck, and providing an RF voltage between a conductive plate beneath the chuck, and one or more walls of the chamber.

公开(公告)号：US20230223281A1

公开(公告)日：2023-07-13

申请号：US18175104

申请日：2023-02-27

Applicant: Applied Materials, Inc.

Inventor： Toan Q. Tran ,  Zilu Weng ,  Dmitry Lubomirsky ,  Satoru Kobayashi ,  Tae Seung Cho ,  Soonam Park ,  Son M. Phi ,  Shankar Venkataraman

IPC: H01L21/67 ,  H01L21/3065 ,  H01L21/683 ,  H01J37/32 ,  H01L21/687 ,  H01L21/311

CPC classification number: H01L21/67069 ,  H01J37/32715 ,  H01L21/3065 ,  H01L21/6831 ,  H01L21/67103 ,  H01L21/67248 ,  H01L21/68757 ,  H01L21/68785 ,  H01L21/68792 ,  H01L21/31116 ,  H01L21/31138

Abstract: A wafer chuck assembly includes a puck, a shaft and a base. The puck includes an electrically insulating material that defines a top surface of the puck; a plurality of electrodes are embedded within the electrically insulating material. The puck also includes an inner puck element that forms one or more channels for a heat exchange fluid, the inner puck element being in thermal communication with the electrically insulating material, and an electrically conductive plate disposed proximate to the inner puck element. The shaft includes an electrically conductive shaft housing that is electrically coupled with the plate, and a plurality of connectors, including electrical connectors for the electrodes. The base includes an electrically conductive base housing that is electrically coupled with the shaft housing, and an electrically insulating terminal block disposed within the base housing, the plurality of connectors passing through the terminal block.

公开(公告)号：US10468285B2

公开(公告)日：2019-11-05

申请号：US15642977

申请日：2017-07-06

Applicant: Applied Materials, Inc.

Inventor： Toan Q. Tran ,  Sultan Malik ,  Dmitry Lubomirsky ,  Shambhu N. Roy ,  Satoru Kobayashi ,  Tae Seung Cho ,  Soonam Park ,  Shankar Venkataraman

IPC: H01L21/683 ,  H01L21/3065 ,  H01L21/67

Abstract: A wafer chuck assembly includes a puck, a shaft and a base. An insulating material defines a top surface of the puck, a heater element is embedded within the insulating material, and a conductive plate lies beneath the insulating material. The shaft includes a housing coupled with the plate, and electrical connectors for the heater elements and the electrodes. A conductive base housing couples with the shaft housing, and the connectors pass through a terminal block within the base housing. A method of plasma processing includes loading a workpiece onto a chuck having an insulating top surface, providing a DC voltage differential across two electrodes within the top surface, heating the chuck by passing current through heater elements, providing process gases in a chamber surrounding the chuck, and providing an RF voltage between a conductive plate beneath the chuck, and one or more walls of the chamber.

公开(公告)号：US20190304756A1

公开(公告)日：2019-10-03

申请号：US16374420

申请日：2019-04-03

Applicant: Applied Materials, Inc.

Inventor： Laksheswar Kalita ,  Soonam Park ,  Toan Q. Tran ,  Lili Ji ,  Dmitry Lubomirsky ,  Akhil Devarakonda ,  Tien Fak Tan ,  Tae Won Kim ,  Saravjeet Singh ,  Alexander Tam ,  Jingchun Zhang ,  Jing J. Zhang

IPC: H01J37/32 ,  C23C4/134 ,  C23C4/11

Abstract: Systems and methods may be used to produce coated components. Exemplary chamber components may include an aluminum, stainless steel, or nickel plate defining a plurality of apertures. The plate may include a hybrid coating, and the hybrid coating may include a first layer comprising a corrosion resistant coating. The first layer may extend conformally through each aperture of the plurality of apertures. The hybrid coating may also include a second layer comprising an erosion resistant coating extending across a plasma-facing surface of the semiconductor chamber component.

公开(公告)号：US11728139B2

公开(公告)日：2023-08-15

申请号：US17219360

申请日：2021-03-31

Applicant: Applied Materials, Inc.

Inventor： Toan Q. Tran ,  Soonam Park ,  Junghoon Kim ,  Dmitry Lubomirsky

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683 ,  H01L21/311

CPC classification number: H01J37/32357 ,  H01J37/32082 ,  H01J37/32449 ,  H01J37/32834 ,  H01L21/311 ,  H01L21/67069 ,  H01L21/6831

Abstract: A method and apparatus for substrate etching are described herein. A processing chamber described herein includes a source module, a process module, a flow module, and an exhaust module. An RF source may be coupled to the chamber and a remote plasma may be generated in the source module and a direct plasma may be generated in the process module. Cyclic etching processes described may use alternating radical and direct plasmas to etch a substrate.

公开(公告)号：US10550472B2

公开(公告)日：2020-02-04

申请号：US14481774

申请日：2014-09-09

Applicant: Applied Materials, Inc.

Inventor： Kien N. Chuc ,  Qiwei Liang ,  Hanh D. Nguyen ,  Xinglong Chen ,  Matthew Miller ,  Soonam Park ,  Toan Q. Tran ,  Adib Khan ,  Jang-Gyoo Yang ,  Dmitry Lubomirsky ,  Shankar Venkataraman

IPC: C23C16/455 ,  H01J37/32 ,  C23C16/452

Abstract: Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.

公开(公告)号：US20180025900A1

公开(公告)日：2018-01-25

申请号：US15217651

申请日：2016-07-22

Applicant: Applied Materials, Inc.

Inventor： Soonam Park ,  Mang-Mang Ling ,  Toan Q. Tran ,  Dmitry Lubomirsky

IPC: H01L21/02 ,  H01L21/3065

CPC classification number: H01L21/02057 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136

Abstract: Methods of removing contamination from the surface of a substrate are described. The etch selectively removes alkali metals and alkali earth metals from substrates. The alkali metals may include sodium, lithium, rubidium or potassium and the alkali earth metals may include calcium. For example, the etch may remove contaminants by generating and then desorbing volatile chemical species from the substrate. A hydrogen-and-oxygen-containing precursor or combination of precursors is flowed into a remote plasma to form plasma effluents. The plasma effluents are then flowed into the substrate processing region to react with the substrate and remove an alkali metal and/or an alkali earth metal from the surface of the substrate. No local plasma excites the plasma effluents in embodiments.

公开(公告)号：US20170229326A1

公开(公告)日：2017-08-10

申请号：US15581497

申请日：2017-04-28

Applicant: Applied Materials, Inc.

Inventor： Toan Q. Tran ,  Zilu Weng ,  Dmitry Lubomirsky ,  Satoru Kobayashi ,  Tae Seung Cho ,  Soonam Park ,  Son M. Phi ,  Shankar Venkataraman

IPC: H01L21/67 ,  H01L21/683

CPC classification number: H01L21/67069 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/67103 ,  H01L21/67248 ,  H01L21/6831 ,  H01L21/68757 ,  H01L21/68785 ,  H01L21/68792

Abstract: A wafer chuck assembly includes a puck, a shaft and a base. The puck includes an electrically insulating material that defines a top surface of the puck; a plurality of electrodes are embedded within the electrically insulating material. The puck also includes an inner puck element that forms one or more channels for a heat exchange fluid, the inner puck element being in thermal communication with the electrically insulating material, and an electrically conductive plate disposed proximate to the inner puck element. The shaft includes an electrically conductive shaft housing that is electrically coupled with the plate, and a plurality of connectors, including electrical connectors for the electrodes. The base includes an electrically conductive base housing that is electrically coupled with the shaft housing, and an electrically insulating terminal block disposed within the base housing, the plurality of connectors passing through the terminal block.

公开(公告)号：US20160225652A1

公开(公告)日：2016-08-04

申请号：US14612857

申请日：2015-02-03

Applicant: Applied Materials, Inc.

Inventor： Toan Q. Tran ,  Zilu Weng ,  Dmitry Lubomirsky ,  Satoru Kobayashi ,  Tae Seung Cho ,  Soonam Park ,  Son M. Phi ,  Shankar Venkataraman

IPC: H01L21/683 ,  H01L21/3065 ,  H01L21/67

CPC classification number: H01L21/67069 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/67103 ,  H01L21/67248 ,  H01L21/6831 ,  H01L21/68757 ,  H01L21/68785 ,  H01L21/68792

Abstract: A wafer chuck assembly includes a puck, a shaft and a base. The puck includes an electrically insulating material that defines a top surface of the puck; a plurality of electrodes are embedded within the electrically insulating material. The puck also includes an inner puck element that forms one or more channels for a heat exchange fluid, the inner puck element being in thermal communication with the electrically insulating material, and an electrically conductive plate disposed proximate to the inner puck element. The shaft includes an electrically conductive shaft housing that is electrically coupled with the plate, and a plurality of connectors, including electrical connectors for the electrodes. The base includes an electrically conductive base housing that is electrically coupled with the shaft housing, and an electrically insulating terminal block disposed within the base housing, the plurality of connectors passing through the terminal block.

Abstract translation: 晶片卡盘组件包括圆盘，轴和基座。 圆盘包括限定冰球顶表面的电绝缘材料; 多个电极嵌入电绝缘材料内。 该圆盘还包括内部圆盘元件，其形成用于热交换流体的一个或多个通道，内部圆盘元件与电绝缘材料热连通，以及设置在靠近内部圆锥元件的导电板。 所述轴包括与所述板电耦合的导电轴壳体，以及包括用于所述电极的电连接器的多个连接器。 基座包括与轴壳体电耦合的导电基座壳体，以及设置在基座壳体内的电绝缘接线块，多个连接器穿过接线端子。

公开(公告)号：US20160225651A1

公开(公告)日：2016-08-04

申请号：US14612472

申请日：2015-02-03

Applicant: Applied Materials, Inc.

Inventor： Toan Q. Tran ,  Sultan Malik ,  Dmitry Lubomirsky ,  Shambhu N. Roy ,  Satoru Kobayashi ,  Tae Seung Cho ,  Soonam Park ,  Shankar Venkataraman

IPC: H01L21/683 ,  H01L21/67 ,  H01L21/3065

CPC classification number: H01L21/6833 ,  H01L21/3065 ,  H01L21/67103

Abstract: A wafer chuck assembly includes a puck, a shaft and a base. An insulating material defines a top surface of the puck, a heater element is embedded within the insulating material, and a conductive plate lies beneath the insulating material. The shaft includes a housing coupled with the plate, and electrical connectors for the heater elements and the electrodes. A conductive base housing couples with the shaft housing, and the connectors pass through a terminal block within the base housing. A method of plasma processing includes loading a workpiece onto a chuck having an insulating top surface, providing a DC voltage differential across two electrodes within the top surface, heating the chuck by passing current through heater elements, providing process gases in a chamber surrounding the chuck, and providing an RF voltage between a conductive plate beneath the chuck, and one or more walls of the chamber.

Abstract translation: 晶片卡盘组件包括圆盘，轴和基座。 绝缘材料限定了圆盘的顶表面，加热元件嵌入绝缘材料内，导电板位于绝缘材料的下方。 轴包括与板连接的壳体，以及用于加热器元件和电极的电连接器。 导电基座壳体与轴壳体耦合，并且连接器穿过基座壳体内的端子块。 等离子体处理的方法包括将工件加载到具有绝缘顶表面的卡盘上，在顶表面内的两个电极之间提供直流电压差，通过使电流通过加热器元件来加热卡盘，在围绕卡盘的腔室中提供工艺气体 并且在卡盘下方的导电板与腔室的一个或多个壁之间提供RF电压。