公开(公告)号：US20210189564A1

公开(公告)日：2021-06-24

申请号：US17176411

申请日：2021-02-16

Applicant: Applied Materials, Inc.

Inventor： Laksheswar Kalita ,  Soonam Park ,  Dmitry Lubomirsky ,  Tien Fak Tan ,  LokKee Loh ,  Saravjeet Singh ,  Tae Won Kim

IPC: C23C16/455 ,  C23C16/34 ,  H01L21/3213 ,  H01J37/32 ,  H01L21/285 ,  C23C16/458

Abstract: Exemplary semiconductor processing chamber showerheads may include a dielectric plate characterized by a first surface and a second surface opposite the first surface. The dielectric plate may define a plurality of apertures through the dielectric plate. The dielectric plate may define a first annular channel in the first surface of the dielectric plate, and the first annular channel may extend about the plurality of apertures. The dielectric plate may define a second annular channel in the first surface of the dielectric plate. The second annular channel may be formed radially outward from the first annular channel. The showerheads may also include a conductive material embedded within the dielectric plate and extending about the plurality of apertures without being exposed by the apertures. The conductive material may be exposed at the second annular channel.

公开(公告)号：US11591693B2

公开(公告)日：2023-02-28

申请号：US17176411

申请日：2021-02-16

Applicant: Applied Materials, Inc.

Inventor： Laksheswar Kalita ,  Soonam Park ,  Dmitry Lubomirsky ,  Tien Fak Tan ,  LokKee Loh ,  Saravjeet Singh ,  Tae Won Kim

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/34 ,  H01L21/3213 ,  H01L21/285 ,  C23C16/458

Abstract: Exemplary semiconductor processing chamber showerheads may include a dielectric plate characterized by a first surface and a second surface opposite the first surface. The dielectric plate may define a plurality of apertures through the dielectric plate. The dielectric plate may define a first annular channel in the first surface of the dielectric plate, and the first annular channel may extend about the plurality of apertures. The dielectric plate may define a second annular channel in the first surface of the dielectric plate. The second annular channel may be formed radially outward from the first annular channel. The showerheads may also include a conductive material embedded within the dielectric plate and extending about the plurality of apertures without being exposed by the apertures. The conductive material may be exposed at the second annular channel.

公开(公告)号：US20220037126A1

公开(公告)日：2022-02-03

申请号：US16983164

申请日：2020-08-03

Applicant: Applied Materials, Inc.

Inventor： Jennifer Y. Sun ,  Ren-Guan Duan ,  Gayatri Natu ,  Tae Won Kim ,  Jiyong Huang ,  Nitin Deepak ,  Paul Brillhart ,  Lin Zhang ,  Yikai Chen ,  Sanni Sinikka Seppälä ,  Ganesh Balasubramanian ,  JuanCarlos Rocha ,  Shankar Venkataraman ,  Katherine Elizabeth Woo

IPC: H01J37/32 ,  C23C16/30 ,  C23C16/455 ,  C23C16/44

Abstract: Embodiments of the disclosure relate to articles, coated chamber components and methods of coating chamber components with a protective coating that includes at least one metal fluoride having a formula selected from the group consisting of M1xFw, M1xM2yFw and M1xM2yM3zFw, where at least one of M1, M2, or M3 is magnesium or lanthanum. The protective coating can be deposited by atomic layer deposition, chemical vapor deposition, electron beam ion assisted deposition, or physical vapor deposition.

公开(公告)号：US10892198B2

公开(公告)日：2021-01-12

申请号：US16131942

申请日：2018-09-14

Applicant: Applied Materials, Inc.

Inventor： Chirantha P. Rodrigo ,  Suketu A. Parikh ,  Tsz Keung Cheung ,  Satya Gowthami Achanta ,  Jingchun Zhang ,  Saravjeet Singh ,  Tae Won Kim

IPC: H01L21/768 ,  H01L21/66 ,  H01L21/311 ,  H01L21/3065 ,  H01J37/32

Abstract: Exemplary etching methods may include flowing a hydrogen-containing precursor into a semiconductor processing chamber. The methods may include flowing a fluorine-containing precursor into a remote plasma region of the semiconductor processing chamber. The methods may include forming a plasma of the fluorine-containing precursor in the remote plasma region. The methods may include etching a pre-determined amount of a silicon-containing material from a substrate in a processing region of the semiconductor processing chamber. The methods may include measuring a radical density within the remote plasma region during the etching. The methods may also include halting the flow of the hydrogen-containing precursor into the semiconductor processing chamber when the radical density measured over time correlates to a produced amount of etchant to remove the pre-determined amount of the silicon-containing material.

公开(公告)号：US20200091018A1

公开(公告)日：2020-03-19

申请号：US16131942

申请日：2018-09-14

Applicant: Applied Materials, Inc.

Inventor： Chirantha P. Rodrigo ,  Suketu A. Parikh ,  Tsz Keung Cheung ,  Satya Gowthami Achanta ,  Jingchun Zhang ,  Saravjeet Singh ,  Tae Won Kim

IPC: H01L21/66 ,  H01L21/3065 ,  H01J37/32

Abstract: Exemplary etching methods may include flowing a hydrogen-containing precursor into a semiconductor processing chamber. The methods may include flowing a fluorine-containing precursor into a remote plasma region of the semiconductor processing chamber. The methods may include forming a plasma of the fluorine-containing precursor in the remote plasma region. The methods may include etching a pre-determined amount of a silicon-containing material from a substrate in a processing region of the semiconductor processing chamber. The methods may include measuring a radical density within the remote plasma region during the etching. The methods may also include halting the flow of the hydrogen-containing precursor into the semiconductor processing chamber when the radical density measured over time correlates to a produced amount of etchant to remove the pre-determined amount of the silicon-containing material.

公开(公告)号：US20190304756A1

公开(公告)日：2019-10-03

申请号：US16374420

申请日：2019-04-03

Applicant: Applied Materials, Inc.

Inventor： Laksheswar Kalita ,  Soonam Park ,  Toan Q. Tran ,  Lili Ji ,  Dmitry Lubomirsky ,  Akhil Devarakonda ,  Tien Fak Tan ,  Tae Won Kim ,  Saravjeet Singh ,  Alexander Tam ,  Jingchun Zhang ,  Jing J. Zhang

IPC: H01J37/32 ,  C23C4/134 ,  C23C4/11

Abstract: Systems and methods may be used to produce coated components. Exemplary chamber components may include an aluminum, stainless steel, or nickel plate defining a plurality of apertures. The plate may include a hybrid coating, and the hybrid coating may include a first layer comprising a corrosion resistant coating. The first layer may extend conformally through each aperture of the plurality of apertures. The hybrid coating may also include a second layer comprising an erosion resistant coating extending across a plasma-facing surface of the semiconductor chamber component.

公开(公告)号：US11834744B2

公开(公告)日：2023-12-05

申请号：US18173704

申请日：2023-02-23

Applicant: Applied Materials, Inc.

Inventor： Laksheswar Kalita ,  Soonam Park ,  Dmitry Lubomirsky ,  Tien Fak Tan ,  LokKee Loh ,  Saravjeet Singh ,  Tae Won Kim

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/34 ,  H01L21/3213 ,  H01L21/285 ,  C23C16/458

CPC classification number: C23C16/45565 ,  C23C16/34 ,  C23C16/4581 ,  C23C16/45574 ,  H01J37/32495 ,  H01J37/32559 ,  H01L21/28512 ,  H01L21/3213

Abstract: Exemplary semiconductor processing chamber showerheads may include a dielectric plate characterized by a first surface and a second surface opposite the first surface. The dielectric plate may define a plurality of apertures through the dielectric plate. The dielectric plate may define a first annular channel in the first surface of the dielectric plate, and the first annular channel may extend about the plurality of apertures. The dielectric plate may define a second annular channel in the first surface of the dielectric plate. The second annular channel may be formed radially outward from the first annular channel. The showerheads may also include a conductive material embedded within the dielectric plate and extending about the plurality of apertures without being exposed by the apertures. The conductive material may be exposed at the second annular channel.

公开(公告)号：US20230203657A1

公开(公告)日：2023-06-29

申请号：US18173704

申请日：2023-02-23

Applicant: Applied Materials, Inc.

Inventor： Laksheswar Kalita ,  Soonam Park ,  Dmitry Lubomirsky ,  Tien Fak Tan ,  LokKee Loh ,  Saravjeet Singh ,  Tae Won Kim

IPC: C23C16/455 ,  C23C16/34 ,  H01L21/3213 ,  H01J37/32 ,  H01L21/285 ,  C23C16/458

CPC classification number: C23C16/45565 ,  C23C16/45574 ,  C23C16/34 ,  H01L21/3213 ,  H01J37/32495 ,  H01J37/32559 ,  H01L21/28512 ,  C23C16/4581

Abstract: Exemplary semiconductor processing chamber showerheads may include a dielectric plate characterized by a first surface and a second surface opposite the first surface. The dielectric plate may define a plurality of apertures through the dielectric plate. The dielectric plate may define a first annular channel in the first surface of the dielectric plate, and the first annular channel may extend about the plurality of apertures. The dielectric plate may define a second annular channel in the first surface of the dielectric plate. The second annular channel may be formed radially outward from the first annular channel. The showerheads may also include a conductive material embedded within the dielectric plate and extending about the plurality of apertures without being exposed by the apertures. The conductive material may be exposed at the second annular channel.

公开(公告)号：US10920319B2

公开(公告)日：2021-02-16

申请号：US16245698

申请日：2019-01-11

Applicant: Applied Materials, Inc.

Inventor： Laksheswar Kalita ,  Soonam Park ,  Dmitry Lubomirsky ,  Tien Fak Tan ,  LokKee Loh ,  Saravjeet Singh ,  Tae Won Kim

IPC: C23C16/455 ,  C23C16/34 ,  H01L21/3213 ,  H01J37/32 ,  H01L21/285 ,  C23C16/458

Abstract: Exemplary semiconductor processing chamber showerheads may include a dielectric plate characterized by a first surface and a second surface opposite the first surface. The dielectric plate may define a plurality of apertures through the dielectric plate. The dielectric plate may define a first annular channel in the first surface of the dielectric plate, and the first annular channel may extend about the plurality of apertures. The dielectric plate may define a second annular channel in the first surface of the dielectric plate. The second annular channel may be formed radially outward from the first annular channel. The showerheads may also include a conductive material embedded within the dielectric plate and extending about the plurality of apertures without being exposed by the apertures. The conductive material may be exposed at the second annular channel.

公开(公告)号：US10755900B2

公开(公告)日：2020-08-25

申请号：US15965794

申请日：2018-04-27

Applicant: Applied Materials, Inc.

Inventor： Toan Tran ,  Laksheswar Kalita ,  Tae Won Kim ,  Dmitry Lubomirsky ,  Xiaowei Wu ,  Xiao-Ming He ,  Cheng-Hsuan Chou ,  Jennifer Y. Sun

IPC: C23C16/40 ,  H01J37/32 ,  C23C16/02 ,  C23C28/04 ,  C23C16/455 ,  C23C16/04 ,  C23C16/44 ,  C23C24/04 ,  C23C18/36 ,  C25D7/12

Abstract: A method of applying a multi-layer plasma resistant coating on an article comprises performing plating or ALD to form a conformal first plasma resistant layer on an article, wherein the conformal first plasma resistant layer is formed on a surface of the article and on walls of high aspect ratio features in the article. The conformal first plasma resistant coating has a porosity of approximately 0% and a thickness of approximately 200 nm to approximately 1 micron. One of electron beam ion assisted deposition (EB-IAD), plasma enhanced chemical vapor deposition (PECVD), aerosol deposition or plasma spraying is then performed to form a second plasma resistant layer that covers the conformal first plasma resistant layer at a region of the surface but not at the walls of the high aspect ratio features.