ALIGNMENT MARK FOR FRONT TO BACK SIDE ALIGNMENT AND LITHOGRAPHY FOR OPTICAL DEVICE FABRICATION

    公开(公告)号:US20230123356A1

    公开(公告)日:2023-04-20

    申请号:US17947841

    申请日:2022-09-19

    Abstract: A method for aligning a substrate for fabrication of an optical device is disclosed that includes receiving a substrate having a first side and a second side opposite the first side, the first side of the substrate being oriented towards a scanner, the substrate having an alignment mark formed on the first side of the substrate, scanning the alignment mark with the scanner, and fabricating a first pattern for a first optical device on the first side of the substrate. The method includes positioning the substrate such that the second side is oriented toward the scanner, scanning the alignment mark on the first side with the scanner, through the second side, and fabricating a second pattern for a fourth optical device on the second side of the substrate.

    LITHOGRAPHY METHOD TO FORM STRUCTURES WITH SLANTED ANGLE

    公开(公告)号:US20220171283A1

    公开(公告)日:2022-06-02

    申请号:US17534128

    申请日:2021-11-23

    Abstract: The present disclosure generally relates to methods of forming optical devices comprising nanostructures disposed on transparent substrates. A first process of forming the nanostructures comprises depositing a first layer of a first material on a glass substrate, forming one or more trenches in the first layer, and depositing a second layer of a second material in the one or more holes to trenches a first alternating layer of alternating first portions of the first material and second portions of the second material. The first process is repeated one or more times to form additional alternating layers over the first alternating layer. Each first portion of each alternating layer is disposed in contact with and offset a distance from an adjacent first portion in adjacent alternating layers. A second process comprises removing either the first or the second portions from each alternating layer to form the plurality of nanostructures.

    MASK ORIENTATION
    14.
    发明公开
    MASK ORIENTATION 审中-公开

    公开(公告)号:US20230213693A1

    公开(公告)日:2023-07-06

    申请号:US18120520

    申请日:2023-03-13

    CPC classification number: G03F7/70775 G02B5/1857

    Abstract: A method of forming patterned features on a substrate is provided. The method includes positioning a plurality of masks arranged in a mask layout over a substrate. The substrate is positioned in a first plane and the plurality of masks are positioned in a second plane, the plurality of masks in the mask layout have edges that each extend parallel to the first plane and parallel or perpendicular to an alignment feature on the substrate, the substrate includes a plurality of areas configured to be patterned by energy directed through the masks arranged in the mask layout. The method further includes directing energy towards the plurality of areas through the plurality of masks arranged in the mask layout over the substrate to form a plurality of patterned features in each of the plurality of areas.

    A METHOD TO DETERMINE LINE ANGEL AND ROTATION OF MULTPLE PATTERNING

    公开(公告)号:US20220364951A1

    公开(公告)日:2022-11-17

    申请号:US17771557

    申请日:2020-12-14

    Abstract: A method and apparatus for determining a line angle and a line angle rotation of a grating or line feature is disclosed. An aspect of the present disclosure involves, measuring coordinate points of a first line feature using a measurement tool, determining a first slope of the first line feature from the coordinate points, and determining a first line angle from the slope of the first line feature. This process can be repeated to find a second slope of a second line feature that is adjacent to the first line feature. The slope of the first and second line features can be compared to find a line angle rotation. The line angle rotation is compared to a design specification and a stitch quality is determined.

    MASK ORIENTATION
    16.
    发明申请

    公开(公告)号:US20220128745A1

    公开(公告)日:2022-04-28

    申请号:US17571039

    申请日:2022-01-07

    Abstract: A method of forming patterned features on a substrate is provided. The method includes positioning a plurality of masks arranged in a mask layout over a substrate. The substrate is positioned in a first plane and the plurality of masks are positioned in a second plane, the plurality of masks in the mask layout have edges that each extend parallel to the first plane and parallel or perpendicular to an alignment feature on the substrate, the substrate includes a plurality of areas configured to be patterned by energy directed through the masks arranged in the mask layout. The method further includes directing energy towards the plurality of areas through the plurality of masks arranged in the mask layout over the substrate to form a plurality of patterned features in each of the plurality of areas.

    SYSTEM, SOFTWARE APPLICATION, AND METHOD FOR LITHOGRAPHY STITCHING

    公开(公告)号:US20210223704A1

    公开(公告)日:2021-07-22

    申请号:US16748202

    申请日:2020-01-21

    Abstract: Embodiments of the present disclosure relate to methods for positioning masks in a propagation direction of a light source. The masks correspond to a pattern to be written into a photoresist layer of a substrate. The masks are positioned by stitching a first mask and a second mask. The first mask includes a set of first features having first feature extensions extending therefrom at first feature interfaces. The second mask includes a set of second features having second feature extensions extending therefrom at second feature interfaces. Each first feature extension stitches with each corresponding second feature extension to form each stitched portion of a first stitched portion of the first pair of masks. The stitched portion of the first pair of masks defines a portion of the pattern to be written into the photoresist layer.

    LITHOGRAPHY METHOD TO FORM STRUCTURES WITH SLANTED ANGLE

    公开(公告)号:US20250053082A1

    公开(公告)日:2025-02-13

    申请号:US18933099

    申请日:2024-10-31

    Abstract: The present disclosure generally relates to methods of forming optical devices comprising nanostructures disposed on transparent substrates. A first process of forming the nanostructures comprises depositing a first layer of a first material on a glass substrate, forming one or more trenches in the first layer, and depositing a second layer of a second material in the one or more holes to trenches a first alternating layer of alternating first portions of the first material and second portions of the second material. The first process is repeated one or more times to form additional alternating layers over the first alternating layer. Each first portion of each alternating layer is disposed in contact with and offset a distance from an adjacent first portion in adjacent alternating layers. A second process comprises removing either the first or the second portions from each alternating layer to form the plurality of nanostructures.

    METHODS OF GREYTONE IMPRINT LITHOGRAPHY TO FABRICATE OPTICAL DEVICES

    公开(公告)号:US20230341769A1

    公开(公告)日:2023-10-26

    申请号:US18333290

    申请日:2023-06-12

    CPC classification number: G03F7/0005 G02B5/1857 G03F7/0002

    Abstract: A method of imprinting a pattern on a substrate is provided. The method includes forming a first pattern on a plurality of masters using a method other than imprinting, the first pattern including a plurality of patterned features of varying sizes; measuring the patterned features at a plurality of locations on each of the masters; selecting a first master of the plurality of masters based on the measurements of the patterned features on each of the masters; using the first master to form a second pattern on an imprint template; and imprinting the first pattern on a first device with the imprint template.

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