公开(公告)号：US20190051765A1

公开(公告)日：2019-02-14

申请号：US16157032

申请日：2018-10-10

Applicant: Artilux Corporation

Inventor： Szu-Lin Cheng ,  Shu-Lu Chen

IPC: H01L31/02 ,  H01L31/18 ,  H01L21/70 ,  H01L31/105 ,  H01L31/0352 ,  H01L31/028 ,  H01L31/0232 ,  H01L31/0224 ,  H01L31/0216 ,  H01L29/78 ,  H01L29/06 ,  H01L27/146 ,  H01L27/144 ,  H01L23/532 ,  H01L23/522 ,  H01L21/8234 ,  H01L21/77

Abstract: Examples of the various techniques introduced here include, but not limited to, a mesa height adjustment approach during shallow trench isolation formation, a transistor via first approach, and a multiple absorption layer approach. As described further below, the techniques introduced herein include a variety of aspects that can individually and/or collectively resolve or mitigate one or more traditional limitations involved with manufacturing PDs and transistors on the same substrate, such as above discussed reliability, performance, and process temperature issues.

公开(公告)号：US20180247968A1

公开(公告)日：2018-08-30

申请号：US15944658

申请日：2018-04-03

Applicant: Artilux Corporation

Inventor： Yun-Chung Na ,  Che-Fu Liang ,  Shu-Lu Chen ,  Szu-Lin Cheng ,  Han-Din Liu ,  Chien-Lung Chen ,  Yuan-Fu Lyu ,  Chieh-Ting Lin ,  Bo-Jiun Chen ,  Hui-Wen Chen ,  Shu-Wei Chu ,  Chung-Chih Lin ,  Kuan-Chen Chu

IPC: H01L27/146 ,  H01L29/161 ,  H01L31/103 ,  G01S7/486

CPC classification number: H01L27/14643 ,  G01S7/4816 ,  G01S7/4863 ,  G01S7/4914 ,  G01S17/36 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14681 ,  H01L29/161 ,  H01L31/1037

Abstract: A circuit, including: a photodetector including a first readout terminal and a second readout terminal different than the first readout terminal; a first readout circuit coupled with the first readout terminal and configured to output a first readout voltage; a second readout circuit coupled with the second readout terminal and configured to output a second readout voltage; and a common-mode analog-to-digital converter (ADC) including: a first input terminal coupled with a first voltage source; a second input terminal coupled with a common-mode generator, the common-mode generator configured to receive the first readout voltage and the second readout voltage, and to generate a common-mode voltage between the first and second readout voltages; and a first output terminal configured to output a first output signal corresponding to a magnitude of a current generated by the photodetector.

公开(公告)号：US20180188356A1

公开(公告)日：2018-07-05

申请号：US15908300

申请日：2018-02-28

Applicant: Artilux Corporation

Inventor： Yun-Chung Na ,  Che-Fu Liang ,  Szu-Lin Cheng ,  Shu-Lu Chen ,  Kuan-Chen Chu ,  Chung-Chih Lin ,  Han-Din Liu

IPC: G01S7/486 ,  H01L27/146 ,  H01L31/103

Abstract: An optical apparatus including a semiconductor substrate; a first light absorption region supported by the semiconductor substrate, the first light absorption region configured to absorb photons and to generate photo-carriers from the absorbed photons; one or more first switches controlled by a first control signal, the one or more first switches configured to collect at least a portion of the photo-carriers based on the first control signal; and one or more second switches controlled by a second control signal, the one or more second switches configured to collect at least a portion of the photo-carriers based on the second control signal. The one or more first switches include a first trench located between the first p-doped region and the first n-doped region. The one or more second switches include a second trench located between the second p-doped region and the second n-doped region.

公开(公告)号：US09893112B2

公开(公告)日：2018-02-13

申请号：US15248618

申请日：2016-08-26

Applicant: Artilux Corporation

Inventor： Yun-Chung Na ,  Szu-Lin Cheng ,  Shu-Lu Chen ,  Han-Din Liu ,  Hui-Wen Chen ,  Che-Fu Liang

IPC: H01L31/062 ,  H01L31/113 ,  H01L27/146 ,  H01L27/144 ,  H01L31/105 ,  H01L31/0352 ,  H01L31/103 ,  H01L31/028

CPC classification number: H01L27/14647 ,  H01L27/1443 ,  H01L27/14652 ,  H01L31/028 ,  H01L31/035281 ,  H01L31/103 ,  H01L31/105 ,  H02S40/44

Abstract: An optical sensor including a semiconductor substrate; a first light absorption region formed in the semiconductor substrate, the first light absorption region configured to absorb photons at a first wavelength range and to generate photo-carriers from the absorbed photons; a second light absorption region formed on the first light absorption region, the second light absorption region configured to absorb photons at a second wavelength range and to generate photo-carriers from the absorbed photons; and a sensor control signal coupled to the second light absorption region, the sensor control signal configured to provide at least a first control level and a second control level.

公开(公告)号：US20170025466A1

公开(公告)日：2017-01-26

申请号：US15216924

申请日：2016-07-22

Applicant: Artilux Corporation

Inventor： Yun-Chung Na ,  Szu-Lin Cheng ,  Shu-Lu Chen ,  Han-Din Liu ,  Hui-Wen Chen

IPC: H01L27/146

CPC classification number: H01L27/14685 ,  H01L27/14607 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14643 ,  H01L27/14689

Abstract: An optical sensor including a first material layer comprising at least a first material; a second material layer comprising at least a second material that is different from the first material, where a material bandgap of the first material is larger than a material bandgap of the second material; and a graded material layer arranged between the first material layer and the second material layer, the graded material layer comprising an alloy of at least the first material and the second material having compositions of the second material that vary along a direction that is from the first material to the second material.

Abstract translation: 一种光学传感器，包括至少包括第一材料的第一材料层; 第二材料层，其至少包括与第一材料不同的第二材料，其中第一材料的材料带隙大于第二材料的材料带隙; 以及布置在所述第一材料层和所述第二材料层之间的渐变材料层，所述分级材料层包括至少所述第一材料和所述第二材料的合金，所述第二材料具有沿着所述第一材料层和所述第二材料层的方向变化的所述第二材料的组成， 材料到第二种材料。

公开(公告)号：US20190140132A1

公开(公告)日：2019-05-09

申请号：US15996261

申请日：2018-06-01

Applicant: Artilux Corporation

Inventor： Szu-Lin Cheng ,  Han-Din Liu ,  Shu-Lu Chen ,  Yun-Chung Na ,  Hui-Wen Chen

IPC: H01L31/18 ,  H01L27/146 ,  H01L31/054 ,  H01L31/02 ,  H01L31/0216 ,  H01L31/028 ,  H01L31/107 ,  H01L31/0232

Abstract: Structures and techniques introduced here enable the design and fabrication of photodetectors (PDs) and/or other electronic circuits using typical semiconductor device manufacturing technologies meanwhile reducing the adverse impacts on PDs' performance. Examples of the various structures and techniques introduced here include, but not limited to, a pre-PD homogeneous wafer bonding technique, a pre-PD heterogeneous wafer bonding technique, a post-PD wafer bonding technique, their combinations, and a number of mirror equipped PD structures. With the introduced structures and techniques, it is possible to implement PDs using typical direct growth material epitaxy technology while reducing the adverse impact of the defect layer at the material interface caused by lattice mismatch.

公开(公告)号：US10269862B2

公开(公告)日：2019-04-23

申请号：US15702482

申请日：2017-09-12

Applicant: Artilux Corporation

Inventor： Yun-Chung Na ,  Szu-Lin Cheng ,  Shu-Lu Chen ,  Han-Din Liu ,  Hui-Wen Chen

IPC: H01L27/146

Abstract: An optical sensor including a first material layer comprising at least a first material; a second material layer comprising at least a second material that is different from the first material, where a material bandgap of the first material is larger than a material bandgap of the second material; and a graded material layer arranged between the first material layer and the second material layer, the graded material layer comprising an alloy of at least the first material and the second material having compositions of the second material that vary along a direction that is from the first material to the second material.

公开(公告)号：US20180269239A1

公开(公告)日：2018-09-20

申请号：US15982559

申请日：2018-05-17

Applicant: Artilux Corporation

Inventor： Yun-Chung Na ,  Szu-Lin Cheng ,  Shu-Lu Chen ,  Han-Din Liu ,  Hui-Wen Chen ,  Che-Fu Liang

IPC: H01L27/146 ,  H01L31/18 ,  H01L31/09 ,  H01L31/0312 ,  H01L31/0232

Abstract: A method for fabricating an image sensor array having a first group of photodiodes for detecting light at visible wavelengths a second group of photodiodes for detecting light at infrared or near-infrared wavelengths, the method including forming a germanium-silicon layer for the second group of photodiodes on a first semiconductor donor wafer; defining a first interconnect layer on the germanium-silicon layer; defining integrated circuitry for controlling pixels of the image sensor array on a semiconductor carrier wafer; defining a second interconnect layer on the semiconductor carrier wafer; bonding the first interconnect layer with the second interconnect layer; defining the pixels of an image sensor array on a second semiconductor donor wafer; defining a third interconnect layer on the image sensor array; and bonding the third interconnect layer with the germanium-silicon layer.

公开(公告)号：US20180233521A1

公开(公告)日：2018-08-16

申请号：US15952053

申请日：2018-04-12

Applicant: Artilux Corporation

Inventor： Yun-Chung Na ,  Szu-Lin Cheng ,  Shu-Lu Chen ,  Han-Din Liu ,  Hui-Wen Chen ,  Che-Fu Liang ,  Yuan-Fu Lyu ,  Chien-Lung Chen ,  Chung-Chih Lin ,  Kuan-Chen Chu

IPC: H01L27/146 ,  G02B1/11 ,  H04N5/359 ,  H04N5/378 ,  G01J1/44 ,  G01J1/04 ,  G01S17/36

CPC classification number: H01L27/1461 ,  G01J1/0411 ,  G01J1/44 ,  G01J3/0208 ,  G01J3/0259 ,  G01J2001/446 ,  G01J2003/2806 ,  G01S7/4914 ,  G01S7/4915 ,  G01S17/023 ,  G01S17/36 ,  G01S17/89 ,  G02B1/11 ,  G02B3/0006 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14645 ,  H01L27/14649 ,  H01L27/1469 ,  H01L31/02162 ,  H01L31/02325 ,  H01L31/028 ,  H01L31/0312 ,  H01L31/0336 ,  H01L31/1055 ,  H01L31/113 ,  H04N5/359 ,  H04N5/378 ,  H04N9/04553

Abstract: An optical apparatus that includes: a semiconductor substrate formed from a first material, the semiconductor substrate including a first n-doped region; and a photodiode supported by the semiconductor substrate, the photodiode including an absorption region configured to absorb photons and to generate photo-carriers from the absorbed photons, the absorption region being formed from a second material different than the first material and including: a first p-doped region; and a second n-doped region coupled to the first n-doped region, wherein a second doping concentration of the second n-doped region is less than or substantially equal to a first doping concentration of the first n-doped region.

公开(公告)号：US09954016B2

公开(公告)日：2018-04-24

申请号：US15228282

申请日：2016-08-04

Applicant: Artilux Corporation

Inventor： Yun-Chung Na ,  Szu-Lin Cheng ,  Shu-Lu Chen ,  Han-Din Liu ,  Hui-Wen Chen ,  Che-Fu Liang

IPC: H01L27/146 ,  H01L31/0312 ,  H01L31/09 ,  H01L31/18 ,  H01L31/0232

CPC classification number: H01L27/14605 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14645 ,  H01L27/14649 ,  H01L27/1465 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/1469 ,  H01L27/14698 ,  H01L31/02327 ,  H01L31/0312 ,  H01L31/09 ,  H01L31/1812 ,  H01L31/1876 ,  H01L31/1892

Abstract: An image sensor array including a carrier substrate; a first group of photodiodes coupled to the carrier substrate, where the first group of photodiodes include a first photodiode, and where the first photodiode includes a semiconductor layer configured to absorb photons at visible wavelengths and to generate photo-carriers from the absorbed photons; and a second group of photodiodes coupled to the carrier substrate, where the second group of photodiodes include a second photodiode, and where the second photodiode includes a germanium-silicon region fabricated on the semiconductor layer, the germanium-silicon region configured to absorb photons at infrared or near-infrared wavelengths and to generate photo-carriers from the absorbed photons.