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    Structure combining an IC integrated substrate and a carrier, and method of manufacturing such structure
    11.
    发明授权
    Structure combining an IC integrated substrate and a carrier, and method of manufacturing such structure 有权
    结合IC集成基板和载体的结构，以及制造这种结构的方法

    公开(公告)号：US07947573B2

    公开(公告)日：2011-05-24

    申请号：US12121037

    申请日：2008-05-15

    Applicant: Chih-kuang Yang

    Inventor： Chih-kuang Yang

    IPC: H01L21/304

    CPC classification number: H01L21/6835 ,  H01L27/1214 ,  H01L27/1266 ,  H01L2221/6835 ,  H01L2924/0002 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/00

    Abstract: The present invention provides a structure combining an IC integrated substrate and a carrier, which comprises a carrier and an IC integrated substrate formed on the carrier. The IC integrated substrate has a first dielectric layer attached to the carrier. The materials of the carrier and the first dielectric layer are selected to prevent the IC integrated substrate from peeling off the carrier during processing and to allow the IC integrated substrate to naturally separate from the carrier after being cut, through the adhesion between the carrier and the first dielectric layer. The present invention also provides a method of manufacturing the above structure and a method of manufacturing electrical devices using the above structure.

    Abstract translation: 本发明提供一种结合IC集成基板和载体的结构，其包括载体和形成在载体上的IC集成基板。 IC集成基板具有附接到载体的第一介电层。 选择载体和第一介电层的材料以防止IC集成基板在加工过程中从载体上剥离，并且通过载体和载体之间的粘附使IC集成基板在被切割后自然地与载体分离 第一电介质层。 本发明还提供一种制造上述结构的方法和使用上述结构制造电气装置的方法。

    Multi-layer substrate and manufacture method thereof
    13.
    发明授权
    Multi-layer substrate and manufacture method thereof 有权
    多层基板及其制造方法

    公开(公告)号：US07656679B2

    公开(公告)日：2010-02-02

    申请号：US11972554

    申请日：2008-01-10

    Applicant: Chih-kuang Yang

    Inventor： Chih-kuang Yang

    IPC: H05K7/00

    CPC classification number: H05K3/20 ,  H01L24/16 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2924/00014 ,  H01L2924/14 ,  H05K1/111 ,  H05K3/3452 ,  H05K2201/10674 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

    Abstract: Disclosed are a multi-layer substrate and a manufacture method thereof. The multi-layer substrate of the present invention comprises a surface dielectric layer and at least one bond pad layer. The surface dielectric layer is located at a surface of the multi-layer substrate. The bond pad layer is embedded in the surface dielectric layer to construct the multi-layer substrate with the surface dielectric layer of the present invention. The manufacture method of the present invention forms at least one bond pad layer on a flat surface of a carrier and then forms the surface dielectric layer to cover the bond pad layer where the bond pad layer is embedded therein. After the multi-layer substrate is separated from the carrier, the bond pad layer and the surface dielectric layer construct a flat surface of the multi-layer substrate.

    Abstract translation: 公开了一种多层基板及其制造方法。 本发明的多层基板包括表面介电层和至少一个接合焊盘层。 表面介电层位于多层基板的表面。 接合焊盘层嵌入在表面电介质层中以构成具有本发明的表面电介质层的多层基板。 本发明的制造方法在载体的平坦表面上形成至少一个接合焊盘层，然后形成表面电介质层以覆盖键合焊盘层，其中嵌入焊盘层。 在多层基板与载体分离之后，接合焊盘层和表面电介质层构成多层基板的平坦表面。

    STRUCTURE COMBINING AN IC INTEGRATED SUBSTRATE AND A CARRIER, AND METHOD OF MANUFACTURING SUCH STRUCTURE
    14.
    发明申请
    STRUCTURE COMBINING AN IC INTEGRATED SUBSTRATE AND A CARRIER, AND METHOD OF MANUFACTURING SUCH STRUCTURE 有权
    结合IC集成基板和载体的结构以及制造这种结构的方法

    公开(公告)号：US20090061565A1

    公开(公告)日：2009-03-05

    申请号：US12267374

    申请日：2008-11-07

    Applicant: Chih-kuang Yang

    Inventor： Chih-kuang Yang

    IPC: H01L21/58

    CPC classification number: H01L21/6835 ,  H01L27/1266 ,  H01L29/78603 ,  H01L2221/68318 ,  H01L2221/6835 ,  H01L2924/0002 ,  H01L2924/19041 ,  H01L2924/3025 ,  H01L2924/00

    Abstract: The present invention provides a structure combining an IC integrated substrate and a carrier, which comprises a carrier and an IC integrated substrate formed on the carrier. The interface between the IC integrated substrate and the carrier has a specific area at which the interface adhesion is different from that at the remaining area of the interface. The present invention also provides a method of manufacturing the above structure and a method of manufacturing electronic devices using the above structure.

    Abstract translation: 本发明提供一种结合IC集成基板和载体的结构，其包括载体和形成在载体上的IC集成基板。 IC集成基板和载体之间的界面具有与界面的其余区域的界面粘合不同的特定区域。 本发明还提供一种制造上述结构的方法和使用上述结构制造电子器件的方法。

    MULTI-LAYER SUBSTRATE AND MANUFACTURE METHOD THEREOF
    15.
    发明申请
    MULTI-LAYER SUBSTRATE AND MANUFACTURE METHOD THEREOF 有权
    多层基板及其制造方法

    公开(公告)号：US20080316726A1

    公开(公告)日：2008-12-25

    申请号：US11972554

    申请日：2008-01-10

    Applicant: Chih-kuang Yang

    Inventor： Chih-kuang Yang

    IPC: H05K7/00 ,  H01L21/60

    CPC classification number: H05K3/20 ,  H01L24/16 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2924/00014 ,  H01L2924/14 ,  H05K1/111 ,  H05K3/3452 ,  H05K2201/10674 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

    Abstract: Disclosed are a multi-layer substrate and a manufacture method thereof. The multi-layer substrate of the present invention comprises a surface dielectric layer and at least one bond pad layer. The surface dielectric layer is located at a surface of the multi-layer substrate. The bond pad layer is embedded in the surface dielectric layer to construct the multi-layer substrate with the surface dielectric layer of the present invention. The manufacture method of the present invention forms at least one bond pad layer on a flat surface of a carrier and then forms the surface dielectric layer to cover the bond pad layer where the bond pad layer is embedded therein. After the multi-layer substrate is separated from the carrier, the bond pad layer and the surface dielectric layer construct a flat surface of the multi-layer substrate.

    Abstract translation: 公开了一种多层基板及其制造方法。 本发明的多层基板包括表面介电层和至少一个接合焊盘层。 表面介电层位于多层基板的表面。 接合焊盘层嵌入在表面电介质层中以构成具有本发明的表面电介质层的多层基板。 本发明的制造方法在载体的平坦表面上形成至少一个接合焊盘层，然后形成表面电介质层以覆盖其中嵌入有焊盘层的接合焊盘层。 在多层基板与载体分离之后，接合焊盘层和表面电介质层构成多层基板的平坦表面。

    MULTI-LAYER SUBSTRATE AND MANUFACTURING METHOD THEREOF
    16.
    发明申请
    MULTI-LAYER SUBSTRATE AND MANUFACTURING METHOD THEREOF 有权
    多层基板及其制造方法

    公开(公告)号：US20080314629A1

    公开(公告)日：2008-12-25

    申请号：US11960107

    申请日：2007-12-19

    Applicant: Chih-kuang Yang ,  Cheng-yi Chang

    Inventor： Chih-kuang Yang ,  Cheng-yi Chang

    IPC: H05K1/02 ,  H05K3/38

    CPC classification number: H05K3/28 ,  H05K3/0058 ,  H05K3/381 ,  H05K3/4682 ,  H05K2201/0154 ,  H05K2203/016 ,  H05K2203/065 ,  H05K2203/0759 ,  H05K2203/095 ,  Y10T29/49126 ,  Y10T29/49128 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/49156 ,  Y10T29/49165

    Abstract: Disclosed are a multi-layer substrate and a manufacturing method of the multi-layer substrate. By employing a carrier to alternately form dielectric layers and metal structure layers thereon. Each dielectric layer adheres with the adjacent dielectric layer to embed the metal structure layers in the dielectric layers corresponding thereto. Comparing with prior arts, which have to use prepregs when hot pressing and adhering different layers of different materials, the present invention takes fewer processes, thus, fewer kinds of materials without using prepregs. Therefore, the present invention can promote the entire quality and yield of manufacturing the multi-layer substrate to satisfy mechanical characteristic matching of the multi-layer substrate and to reduce cost of the whole manufacturing process. Significantly, the multi-layer substrate having thin dielectric layers according to the present invention can satisfy the concern of impedance matching therefore, and can reduce crosstalk influence to keep good signal integrity therein.

    Abstract translation: 公开了多层基板的多层基板和多层基板的制造方法。 通过使用载体交替地在其上形成介电层和金属结构层。 每个电介质层与相邻的电介质层粘合以将金属结构层嵌入与其对应的电介质层中。 与现有技术相比，当热压和粘附不同材料的不同层时，必须使用预浸料，本发明采用较少的工艺，因此在不使用预浸料的情况下，材料种类较少。 因此，本发明可以提高制造多层基板的整体质量和产率，以满足多层基板的机械特性匹配并降低整个制造工艺的成本。 重要的是，根据本发明的具有薄介电层的多层基板因此可以满足阻抗匹配的关注，并且可以减少串扰影响以保持良好的信号完整性。

    MANUFACTURING METHOD OF METAL STRUCTURE IN MULTI-LAYER SUBSTRATE AND STRUCTURE THEREOF
    17.
    发明申请
    MANUFACTURING METHOD OF METAL STRUCTURE IN MULTI-LAYER SUBSTRATE AND STRUCTURE THEREOF 审中-公开
    多层基板金属结构的制造方法及其结构

    公开(公告)号：US20080292892A1

    公开(公告)日：2008-11-27

    申请号：US11951057

    申请日：2007-12-05

    Applicant: Chih-kuang Yang

    Inventor： Chih-kuang Yang

    IPC: B32B15/08 ,  B32B15/04 ,  G03F1/00

    CPC classification number: H05K3/244 ,  H05K3/048 ,  H05K3/107 ,  H05K2201/09036 ,  Y10T428/24917 ,  Y10T428/31678 ,  Y10T428/31681

    Abstract: Disclosed is a manufacturing method of metal structure in multi-layer substrate and structure thereof. The manufacturing method of the present invention comprises following steps: coating at least one photoresist layer on a surface of a dielectric layer, and then exposing the photoresist dielectric layer to define a predetermined position of the metal structure; therefore, removing the photoresist layer at the predetermined position and forming the metal structure at the predetermined position before forming at least one top-cover metal layer on a surface of the metal structure. The present invention can form a cover metal layer covering over the top surface and the two side surfaces, even the under surface of the metal structure, by one single photomask. Moreover, a finer metal structure with higher reliability can be manufactured. Furthermore, a metal structure can be used as a coaxial structure is also realized.

    Abstract translation: 公开了多层基板中的金属结构体的制造方法及其结构。 本发明的制造方法包括以下步骤：在电介质层的表面上涂覆至少一层光致抗蚀剂层，然后使光致抗蚀剂介电层曝光以限定金属结构的预定位置; 因此，在形成金属结构体的表面上的至少一个顶盖金属层之前，在预定位置移除光致抗蚀剂层并在预定位置处形成金属结构。 本发明可以通过一个单一的光掩模形成覆盖在金属结构的顶表面和两个侧表面甚至金属结构的下表面上的覆盖金属层。 此外，可以制造具有更高可靠性的更精细的金属结构。 此外，也可以使用金属结构作为同轴结构。

    Hybrid structure of multi-layer substrates and manufacture method thereof
    19.
    发明授权
    Hybrid structure of multi-layer substrates and manufacture method thereof 有权
    多层基板的混合结构及其制造方法

    公开(公告)号：US08023282B2

    公开(公告)日：2011-09-20

    申请号：US11856858

    申请日：2007-09-18

    Applicant: Chih-kuang Yang

    Inventor： Chih-kuang Yang

    IPC: H01R12/16

    CPC classification number: H05K1/147 ,  H01L23/13 ,  H01L23/5385 ,  H01L25/162 ,  H01L2224/48091 ,  H01L2924/01322 ,  H01L2924/19107 ,  H05K1/142 ,  H05K3/4611 ,  H05K2201/058 ,  H05K2201/091 ,  H05K2201/09109 ,  H05K2201/0919 ,  H05K2201/09481 ,  Y10T29/417 ,  Y10T29/49117 ,  Y10T29/49126 ,  Y10T428/24322 ,  Y10T428/24917 ,  H01L2924/00014 ,  H01L2924/00

    Abstract: A hybrid structure of multi-layer substrates comprises a first multi-layer substrate and a second multi-layer substrate. The first multi-layer substrate stacks up first metal layers, first dielectric layers alternately and has VIAs. A border district of a first metal layer connects with a border district of the corresponding first dielectric layer. The border districts are separated from adjacent first metal layers and adjacent first dielectric layers. The second multi-layer substrate stacks up second metal layers and second dielectric layers alternately. A border district of a second metal layer connects with a border district of the corresponding second dielectric layer. The border districts are separated from adjacent second metal layers and adjacent second dielectric layers. The VIAs are located at the border districts of the first dielectric layers and each VIA has electric conductor therein to connect one first metal layer with one second metal layer.

    Abstract translation: 多层基板的混合结构包括第一多层基板和第二多层基板。 第一多层基板交替地堆叠第一金属层，第一介电层并具有VIA。 第一金属层的边界区域与相应的第一介电层的边界区域连接。 边界区域与相邻的第一金属层和相邻的第一介电层分离。 第二多层基板交替堆叠第二金属层和第二电介质层。 第二金属层的边界区域与相应的第二电介质层的边界区域连接。 边界区域与相邻的第二金属层和相邻的第二介电层分离。 VIA位于第一电介质层的边界区，并且每个VIA具有导电体，以将一个第一金属层与一个第二金属层连接。

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