公开(公告)号：US20230245894A1

公开(公告)日：2023-08-03

申请号：US18102641

申请日：2023-01-27

Applicant: ENTEGRIS, INC.

Inventor： Philip S.H. Chen ,  Bryan Clark Hendrix ,  Thomas M. Cameron

IPC: H01L21/285 ,  C23C16/14

CPC classification number: H01L21/28568 ,  C23C16/14 ,  H01L21/76876

Abstract: Provided is a process comprising a selective ruthenium seed layer deposition with oxygen-free ruthenium precursors, followed by bulk deposition of metal-containing precursors such as tungsten, molybdenum, cobalt, ruthenium, and/or copper-containing precursors. The ruthenium seed layer deposition is highly selective for the conducting portions of the microelectronic device substrate while minimizing deposition onto the insulating surfaces of the microelectronic device substrate. In certain embodiments, the conducting portions of the substrate is chosen from titanium nitride, tungsten nitride, tantalum nitride, tungsten, cobalt, molybdenum, aluminum, and copper.

公开(公告)号：US09534285B2

公开(公告)日：2017-01-03

申请号：US14301861

申请日：2014-06-11

Applicant: Entegris, Inc.

Inventor： Chongying Xu ,  Tianniu Chen ,  Thomas M. Cameron ,  Jeffrey F. Roeder ,  Thomas H. Baum

IPC: C23C16/40 ,  C23C14/08 ,  C07F17/00 ,  C23C16/455

CPC classification number: C23C14/088 ,  C07F17/00 ,  C23C16/409 ,  C23C16/45553

Abstract: Barium, strontium, tantalum and lanthanum precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of titanate thin films. The precursors have the formula M(Cp)2, wherein M is strontium, barium, tantalum or lanthanum, and Cp is cyclopentadienyl, of the formula wherein each of R1-R5 is the same as or different from one another, with each being independently selected from among hydrogen, C1-C12 alkyl, C1-C12 amino, C6-C10 aryl, C1-C12 alkoxy, C3-C6 alkylsilyl, C2-C12 alkenyl, R1R2R3NNR3, wherein R1, R2 and R3 may be the same as or different from one another and each is independently selected from hydrogen and C1-C6 alkyl, and pendant ligands including functional group(s) providing further coordination to the metal center M. The precursors of the above formula are useful to achieve uniform coating of high dielectric constant materials in the manufacture of flash memory and other microelectronic devices.

Abstract translation: 用于钛酸盐薄膜的原子层沉积（ALD）和化学气相沉积（CVD）的钡，锶，钽和镧前体组合物。 前体具有式M（Cp）2，其中M是锶，钡，钽或镧，Cp是环戊二烯基，其中R 1 -R 5各自彼此相同或不同，各自独立地 选自氢，C1-C12烷基，C1-C12氨基，C6-C10芳基，C1-C12烷氧基，C3-C6烷基甲硅烷基，C2-C12烯基，R1R2R3NNR3，其中R1，R2和R3可以相同或不同 并且各自独立地选自氢和C 1 -C 6烷基，以及包括提供与金属中心M进一步配位的官能团的侧链配体。上式的前体可用于实现高介电常数的均匀涂布 材料制造闪存等微电子器件。

公开(公告)号：US20160362790A1

公开(公告)日：2016-12-15

申请号：US15107170

申请日：2014-12-20

Applicant: ENTEGRIS, INC.

Inventor： Thomas M. Cameron ,  William Hunks

IPC: C23C16/455 ,  H01L21/02 ,  C23C16/40 ,  C07F17/00 ,  C01G23/07

CPC classification number: C23C16/45553 ,  C01G23/07 ,  C07F7/28 ,  C07F17/00 ,  C23C16/405 ,  H01L21/02186 ,  H01L21/02208 ,  H01L21/02271

Abstract: An organotitanium compound selected from the group consisting of: (i) organotitanium compounds of Formulae (I): wherein: each of R0, R1 and R2 is the same as or different from the others, and each is independently selected from organo substituents containing olefinic or alkynyl unsaturation; and each of R3, R4, R5, R6, and R7 is the same as or different from the others, and each is independently selected from H, C1-C12 alkyl, and substituents containing olefinic or alkynyl unsaturation; (ii) organotitanium compounds including at least one tris(alkylaminoalkyl)amine ligand and at least one dialkylamine ligand, wherein alkyl is C1-C6 alkyl; and (iii) organotitanium compounds including a cyclopentadienyl ligand, and a cyclic dienyl or trienyl ligand other than cyclopentadienyl Such organotitanium compounds are usefully employed in vapor deposition processes for depositing titanium on substrates, e.g., in the manufacture of microelectronic devices and microelectronic device precursor structures.

公开(公告)号：US09443736B2

公开(公告)日：2016-09-13

申请号：US14400793

申请日：2013-05-22

Applicant: ENTEGRIS, INC.

Inventor： Thomas M. Cameron ,  Susan V. DiMeo ,  Bryan C. Hendrix ,  Weimin Li

IPC: H01L21/00 ,  H01L21/28 ,  C07F7/10 ,  C23C16/34 ,  C23C16/40 ,  C09D5/24 ,  C23C16/44 ,  C23C16/455 ,  H01L49/02 ,  H01L29/51

CPC classification number: H01L21/28229 ,  C07F7/10 ,  C09D5/24 ,  C23C16/345 ,  C23C16/401 ,  C23C16/402 ,  C23C16/44 ,  C23C16/45525 ,  H01L28/40 ,  H01L29/516

Abstract: A silicon precursor composition is described, including a silylene compound selected from among: silylene compounds of the formula: wherein each of R and R1 is independently selected from organo substituents; amidinate silylenes; and bis(amidinate) silylenes. The silylene compounds are usefully employed to form high purity, conformal silicon-containing films of SiO2, Si3N4, SiC and doped silicates in the manufacture of microelectronic device products, by vapor deposition processes such as CVD, pulsed CVD, ALD and pulsed plasma processes. In one implementation, such silicon precursors can be utilized in the presence of oxidant, to seal porosity in a substrate comprising porous silicon oxide by depositing silicon oxide in the porosity at low temperature, e.g., temperature in a range of from 50° C. to 200° C.

公开(公告)号：US12297217B2

公开(公告)日：2025-05-13

申请号：US17591007

申请日：2022-02-02

Applicant: ENTEGRIS, INC.

Inventor： David M. Ermert ,  Thomas M. Cameron ,  David Kuiper ,  Thomas H. Baum

IPC: C07F7/22

Abstract: Provided is an efficient and effective process for preparing certain organotin compounds having alkyl and alkylamino substituents. The process provides the organotin compounds in a highly pure crystalline form which are particularly useful as precursors in the deposition of high-purity tin oxide films in, for example, extreme ultraviolet light (EUV) lithography techniques used in the manufacture of certain microelectronic devices.

公开(公告)号：US20250002509A1

公开(公告)日：2025-01-02

申请号：US18884024

申请日：2024-09-12

Applicant: ENTEGRIS, INC.

Inventor： David M. Ermert ,  Thomas M. Cameron

IPC: C07F7/22

Abstract: The invention provides a facile process for preparing certain organotin compounds having alkyl and aryl substituents. These compounds are useful as intermediates in the synthesis of certain alkylamino- and alkoxy-substituted alkyl tin compounds, which are in turn useful as precursors in the deposition of high-purity tin oxide films in, for example, extreme ultraviolet light (EUV) lithography techniques used in microelectronic device manufacturing.

公开(公告)号：US20240343591A1

公开(公告)日：2024-10-17

申请号：US18752725

申请日：2024-06-24

Applicant: ENTEGRIS, INC.

Inventor： Scott A. Laneman ,  Thomas M. Cameron ,  Thomas H. Baum ,  David Kuiper ,  David M. Ermert ,  Johathan W. Dube

IPC: C01B33/107

CPC classification number: C01B33/107

Abstract: Provided are complexes useful in the conversion of chloro- and bromo-silanes to highly desired iodosilanes such as H2SiI2 and HSiI3, via a halide exchange reaction. The species which mediates this reaction is an iodide reactant comprising aluminum.

公开(公告)号：US20230391803A1

公开(公告)日：2023-12-07

申请号：US18204210

申请日：2023-05-31

Applicant: ENTEGRIS, INC.

Inventor： David M. Ermert ,  Claudia Fafard ,  Thomas Coyne ,  Thomas M. Cameron

IPC: C07F7/22 ,  C07D307/06 ,  C07C43/04

CPC classification number: C07F7/2208 ,  C07D307/06 ,  C07C43/043 ,  C07F7/2284

Abstract: The present disclosure includes a method of obtaining an alkyltintrihalide, obtaining a solvent, and contacting the alkyltintrihalide and the solvent, thereby forming an alkyltintrihalide adduct. Also described is a composition including: an alkyltintrihalide adduct of the formula: RSnX3·(solv)n, wherein: R is a substituted C1-C5 alkyl, an unsubstituted C1-C5 alkyl, a substituted C1-C5 alkenyl, or an unsubstituted C1-C5 alkenyl; X is Cl, Br, or I; solv is a solvent; and n is at least 1.

公开(公告)号：US20230303596A1

公开(公告)日：2023-09-28

申请号：US18197511

申请日：2023-05-15

Applicant: ENTEGRIS, INC.

Inventor： David M. Ermert ,  Thomas H. Baum ,  Thomas M. Cameron

IPC: C07F7/22

CPC classification number: C07F7/2284 ,  C07F7/2296

Abstract: Provided is a facile methodology for preparing certain organotin compounds having alkyl and alkylamino or alkyl and alkoxy substituents. The process provides the organotin compounds in a highly pure form which are particularly useful as precursors in the deposition of high-purity tin oxide films in, for example, extreme ultraviolet light (EUV) lithography techniques used in the manufacture of certain microelectronic devices.

公开(公告)号：US20230271987A1

公开(公告)日：2023-08-31

申请号：US18107855

申请日：2023-02-09

Applicant: ENTEGRIS, INC.

Inventor： Thomas M. Cameron ,  David Kuiper ,  David M. Ermert ,  Thomas Coyne

IPC: C07F11/00

CPC classification number: C07F11/00

Abstract: Some embodiments relate to precursors (including intermediate precursors) and related methods. To prepare an intermediate precursor, a mixture of bis (arene) metal complexes is combined with a first arene. The mixture of bis (arene) metal complexes and the first arene are heated and subsequently cooled. Upon cooling, a bis (first arene) metal complex precipitates from solution to obtain an intermediate precursor with high purity. To prepare a precursor, the bis (first arene) metal complex is contacted with a second arene and heated to obtain a precursor with high purity.