公开(公告)号：US20230295196A1

公开(公告)日：2023-09-21

申请号：US18201100

申请日：2023-05-23

Applicant: ENTEGRIS, INC.

Inventor： David Kuiper ,  David M. Ermert ,  Thomas Coyne

IPC: C07F7/22

CPC classification number: C07F7/2284 ,  C07F7/2296

Abstract: Provided is a facile process for preparing certain organotin compounds having alkyl and alkylamino substituents. The process provides organotin precursor compounds, for example tris(dimethylamido)isopropyl tin, in a highly pure form. As such, the products of the process are particularly useful in the deposition of high-purity tin oxide films in, for example, extreme ultraviolet light (EUV) lithography techniques used in microelectronic device manufacturing.

公开(公告)号：US20230391803A1

公开(公告)日：2023-12-07

申请号：US18204210

申请日：2023-05-31

Applicant: ENTEGRIS, INC.

Inventor： David M. Ermert ,  Claudia Fafard ,  Thomas Coyne ,  Thomas M. Cameron

IPC: C07F7/22 ,  C07D307/06 ,  C07C43/04

CPC classification number: C07F7/2208 ,  C07D307/06 ,  C07C43/043 ,  C07F7/2284

Abstract: The present disclosure includes a method of obtaining an alkyltintrihalide, obtaining a solvent, and contacting the alkyltintrihalide and the solvent, thereby forming an alkyltintrihalide adduct. Also described is a composition including: an alkyltintrihalide adduct of the formula: RSnX3·(solv)n, wherein: R is a substituted C1-C5 alkyl, an unsubstituted C1-C5 alkyl, a substituted C1-C5 alkenyl, or an unsubstituted C1-C5 alkenyl; X is Cl, Br, or I; solv is a solvent; and n is at least 1.

公开(公告)号：US20230271987A1

公开(公告)日：2023-08-31

申请号：US18107855

申请日：2023-02-09

Applicant: ENTEGRIS, INC.

Inventor： Thomas M. Cameron ,  David Kuiper ,  David M. Ermert ,  Thomas Coyne

IPC: C07F11/00

CPC classification number: C07F11/00

Abstract: Some embodiments relate to precursors (including intermediate precursors) and related methods. To prepare an intermediate precursor, a mixture of bis (arene) metal complexes is combined with a first arene. The mixture of bis (arene) metal complexes and the first arene are heated and subsequently cooled. Upon cooling, a bis (first arene) metal complex precipitates from solution to obtain an intermediate precursor with high purity. To prepare a precursor, the bis (first arene) metal complex is contacted with a second arene and heated to obtain a precursor with high purity.

公开(公告)号：US11697660B2

公开(公告)日：2023-07-11

申请号：US17585971

申请日：2022-01-27

Applicant: ENTEGRIS, INC.

Inventor： David Kuiper ,  David M. Ermert ,  Thomas Coyne

IPC: C07F7/22

CPC classification number: C07F7/2284 ,  C07F7/2296

Abstract: Provided is a facile process for preparing certain organotin compounds having alkyl and alkylamino substituents. The process provides organotin precursor compounds, for example tris(dimethylamido)isopropyl tin, in a highly pure form. As such, the products of the process are particularly useful in the deposition of high-purity tin oxide films in, for example, extreme ultraviolet light (EUV) lithography techniques used in microelectronic device manufacturing.

公开(公告)号：US20220242888A1

公开(公告)日：2022-08-04

申请号：US17585971

申请日：2022-01-27

Applicant: ENTEGRIS, INC.

Inventor： David Kuiper ,  David M. Ermert ,  Thomas Coyne

IPC: C07F7/22

Abstract: Provided is a facile process for preparing certain organotin compounds having alkyl and alkylamino substituents. The process provides organotin precursor compounds, for example tris(dimethylamido)isopropyl tin, in a highly pure form. As such, the products of the process are particularly useful in the deposition of high-purity tin oxide films in, for example, extreme ultraviolet light (EUV) lithography techniques used in microelectronic device manufacturing.