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    Laser device
    11.
    发明授权
    Laser device 有权

    公开(公告)号：US11532921B2

    公开(公告)日：2022-12-20

    申请号：US16863277

    申请日：2020-04-30

    Applicant: EPISTAR CORPORATION ,  iReach Corporation

    Inventor： Hsin-Chan Chung ,  Shou-Lung Chen

    IPC: H01S5/042 ,  H01S5/028 ,  H01S5/183 ,  H01S5/023 ,  H01S5/0225 ,  H01S5/0233 ,  H01S5/0235

    Abstract: A semiconductor device includes a substrate, an epitaxial stack disposed on the substrate, a first connection layer between the epitaxial stack and the substrate and a first electrode disposed on the first connection layer. The substrate has a first side surface and a second side surface. The epitaxial stack has a semiconductor structure with a first lateral surface adjacent to the first side surface and a second lateral surface opposing the first lateral surface and adjacent to the second side surface. The first connection layer has a first protruding portion extending beyond the first lateral surface and a second protruding portion extending beyond the second lateral surface. The first electrode is in contact with the first protruding portion and the second protruding portion.

    Light-emitting diode
    14.
    发明授权
    Light-emitting diode 有权
    发光二极管

    公开(公告)号：US09472719B2

    公开(公告)日：2016-10-18

    申请号：US14625156

    申请日：2015-02-18

    Applicant: EPISTAR CORPORATION

    Inventor： Yu-Ren Peng ,  Tzu-Chieh Hsu ,  Shih-I Chen ,  Rong-Ren Lee ,  Hsin-Chan Chung ,  Wen-Luh Liao ,  Yi-Chieh Lin

    IPC: H01L33/10 ,  H01L33/12 ,  H01L33/42

    CPC classification number: H01L33/105 ,  H01L33/10 ,  H01L33/12 ,  H01L33/30 ,  H01L33/38 ,  H01L33/42 ,  H01L33/46

    Abstract: A light-emitting diode, comprises an active layer for emitting a light with a phase and a peak wavelength λ in air, a reflector, a lower semiconductor stack between the active layer and the reflector, wherein the lower semiconductor stack comprises multiple semiconductor layers, and each of the multiple semiconductor layers has a refractive index ni, a thickness di and two sides each contacting adjacent layers to form two interfaces, wherein each interface has a phase shift when the light passes through the interface.

    Abstract translation: 发光二极管包括用于在空气中发射具有相位和峰值波长λ的光的有源层，反射器，有源层和反射器之间的下半导体叠层，其中下半导体堆叠包括多个半导体层， 并且多个半导体层中的每一个具有折射率ni，厚度di和两侧各自接触相邻层以形成两个界面，其中每个界面在光通过界面时具有相移。

    LIGHT-EMITTING DIODE
    15.
    发明申请
    LIGHT-EMITTING DIODE 有权
    发光二极管

    公开(公告)号：US20160240731A1

    公开(公告)日：2016-08-18

    申请号：US14625156

    申请日：2015-02-18

    Applicant: EPISTAR CORPORATION

    Inventor： Yu-Ren Peng ,  Tzu-Chieh Hsu ,  Shih-I Chen ,  Rong-Ren Lee ,  Hsin-Chan Chung ,  Wen-Luh Liao ,  Yi-Chieh Lin

    IPC: H01L33/10 ,  H01L33/42 ,  H01L33/12

    CPC classification number: H01L33/105 ,  H01L33/10 ,  H01L33/12 ,  H01L33/30 ,  H01L33/38 ,  H01L33/42 ,  H01L33/46

    Abstract: A light-emitting diode, comprises an active layer for emitting a light with a phase and a peak wavelength λ in air, a reflector, a lower semiconductor stack between the active layer and the reflector, wherein the lower semiconductor stack comprises multiple semiconductor layers, and each of the multiple semiconductor layers has a refractive index ni, a thickness di and two sides each contacting adjacent layers to form two interfaces, wherein each interface has a phase shift when the light passes through the interface.

    Abstract translation: 发光二极管包括用于在空气中发射具有相位和峰值波长λ的光的有源层，反射器，有源层和反射器之间的下半导体叠层，其中下半导体堆叠包括多个半导体层， 并且多个半导体层中的每一个具有折射率ni，厚度di和两侧各自接触相邻层以形成两个界面，其中每个界面在光通过界面时具有相移。

    LIGHT-EMITTING DIODE
    19.
    发明申请
    LIGHT-EMITTING DIODE 审中-公开
    发光二极管

    公开(公告)号：US20170005227A1

    公开(公告)日：2017-01-05

    申请号：US15266249

    申请日：2016-09-15

    Applicant: EPISTAR CORPORATION

    Inventor： Yu-Ren Peng ,  Tzu-Chieh Hsu ,  Shih-I Chen ,  Rong-Ren Lee ,  Hsin-Chan Chung ,  Wen-Luh Liao ,  Yi-Chieh Lin

    IPC: H01L33/10 ,  H01L33/38 ,  H01L33/46

    CPC classification number: H01L33/105 ,  H01L33/10 ,  H01L33/12 ,  H01L33/30 ,  H01L33/38 ,  H01L33/42 ,  H01L33/46

    Abstract: A light-emitting diode, comprises an active layer for emitting a light ray; an upper semiconductor stack on the active layer, wherein the upper semiconductor stack comprises a window layer; a reflector; and a lower semiconductor stack between the active layer and the reflector; wherein the thickness of the window layer is small than or equal to 3 μm, and the thickness of the lower semiconductor stack is small than or equal to 1 μm.

    Abstract translation: 发光二极管包括用于发射光线的有源层; 在所述有源层上的上半导体堆叠，其中所述上半导体堆叠包括窗口层; 反射器 以及在所述有源层和所述反射器之间的下半导体堆叠; 其中所述窗口层的厚度小于或等于3μm，并且所述下半导体叠层的厚度小于或等于1μm。

    Light-emitting element
    20.
    发明授权
    Light-emitting element 有权
    发光元件

    公开(公告)号：US09318663B2

    公开(公告)日：2016-04-19

    申请号：US14866232

    申请日：2015-09-25

    Applicant: EPISTAR CORPORATION

    Inventor： Ching-Yuan Tsai ,  Hsin-Chan Chung ,  Wen-Luh Liao

    IPC: H01L33/46 ,  H01L33/42 ,  H01L33/60 ,  H01L33/20 ,  H01L33/62

    CPC classification number: H01L33/44 ,  H01L33/14 ,  H01L33/38 ,  H01L33/42 ,  H01L33/46 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014

    Abstract: A light-emitting element comprises a light-emitting stack comprising an active layer, a first insulative layer having a first refractive index on the light-emitting stack, a second insulative layer having a second refractive index on the first insulative layer, and a transparent conducting structure having a third refractive index on the second insulative layer, wherein the second refractive index is between the first refractive index and the third refractive index, and the first refractive index is smaller than 1.4.

    Abstract translation: 发光元件包括发光叠层，其包括有源层，在发光叠层上具有第一折射率的第一绝缘层，在第一绝缘层上具有第二折射率的第二绝缘层，以及透明 在所述第二绝缘层上具有第三折射率的导电结构，其中所述第二折射率在所述第一折射率和所述第三折射率之间，并且所述第一折射率小于1.4。

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