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    Wavelength Conversion Structure, Manufacturing Methods Thereof, and Lighting Emitting Device including the Wavelength Conversion Structure
    11.
    发明申请
    Wavelength Conversion Structure, Manufacturing Methods Thereof, and Lighting Emitting Device including the Wavelength Conversion Structure 有权
    波长转换结构及其制造方法以及包括波长转换结构在内的照明发光装置

    公开(公告)号：US20130241398A1

    公开(公告)日：2013-09-19

    申请号：US13874132

    申请日：2013-04-30

    Applicant: EPISTAR CORPORATION

    Inventor： Min-Hsun HSIEH ,  Yi-Jui HUANG ,  Meng-Yuan HONG ,  Ming-Chi HSU

    IPC: H05B33/12

    CPC classification number: H05B33/12 ,  H01L33/501 ,  H01L33/507 ,  Y10T428/249986

    Abstract: A wavelength conversion structure comprises a phosphor layer comprising a first part and a second part formed on the first part, wherein the first part and the second part have a plurality of pores, a first material layer formed in the plurality of pores of the first part, a second material layer formed in the plurality of pores of the second part and a plurality of phosphor particles, wherein the plurality of phosphor particles is distributed in the first material layer and the second material layer.

    Abstract translation: 波长转换结构包括荧光体层，其包括形成在第一部分上的第一部分和第二部分，其中第一部分和第二部分具有多个孔，第一部分层形成在第一部分的多个孔中 形成在第二部分的多个孔中的第二材料层和多个荧光体颗粒，其中多个荧光体颗粒分布在第一材料层和第二材料层中。

    SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THEREOF
    12.
    发明申请
    SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THEREOF 有权

    公开(公告)号：US20230017939A1

    公开(公告)日：2023-01-19

    申请号：US17947536

    申请日：2022-09-19

    Applicant: EPISTAR CORPORATION

    Inventor： Shih-An LIAO ,  Shau-Yi CHEN ,  Ming-Chi HSU ,  Chun-Hung LIU ,  Min-Hsun HSIEH

    IPC: H01L23/00 ,  H01L33/62

    Abstract: A semiconductor device comprises a semiconductor die, comprising a stacking structure, a first bonding pad with a first bonding surface positioned away from the stack structure, and a second bonding pad; a carrier comprising a connecting surface; a third bonding pad which comprises a second bonding surface and is arranged on the connecting surface, and a fourth bonding pad arranged on the connecting surface of the carrier; and a conductive connecting layer comprising a first conductive part, comprising a first outer contour, and formed between and directly contacting the first bonding pad and the third bonding pad; a second conductive part formed between the second bonding pad and the fourth bonding pad; and a blocking part covering the first conductive part to form a covering area, wherein the first bonding surface comprises a first position which is the closest to the carrier within the covering area and a second position which is the farthest from the carrier within the covering area in a cross section view, and a distance from the first position to the first out contour is greater than that from the second position to the first outer contour.

    SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THEREOF
    13.
    发明申请
    SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THEREOF 审中-公开

    公开(公告)号：US20190109111A1

    公开(公告)日：2019-04-11

    申请号：US16196315

    申请日：2018-11-20

    Applicant: EPISTAR CORPORATION

    Inventor： Shih-An LIAO ,  Shau-Yi CHEN ,  Ming-Chi HSU ,  Chun-Hung LIU ,  Min-Hsun HSIEH

    IPC: H01L23/00 ,  H01L33/62 ,  H01L33/30 ,  H01L33/64

    Abstract: A semiconductor device comprises a semiconductor die, comprising a stacking structure, a first bonding pad with a first bonding surface positioned away from the stack structure, and a second bonding pad; a carrier comprising a connecting surface; a third bonding pad which comprises a second bonding surface and is arranged on the connecting surface, and a fourth bonding pad arranged on the connecting surface of the carrier; and a conductive connecting layer comprising a first conductive part, comprising a first outer contour, and formed between and directly contacting the first bonding pad and the third bonding pad; a second conductive part formed between the second bonding pad and the fourth bonding pad; and a blocking part covering the first conductive part to form a covering area, wherein the first bonding surface comprises a first position which is the closest to the carrier within the covering area and a second position which is the farthest from the carrier within the covering area in a cross section view, and a distance from the first position to the first out contour is greater than that from the second position to the first outer contour.

    Light-emitting device and manufacturing method thereof
    14.
    发明申请
    Light-emitting device and manufacturing method thereof 审中-公开
    发光元件及其制造方法

    公开(公告)号：US20160190406A1

    公开(公告)日：2016-06-30

    申请号：US14757365

    申请日：2015-12-22

    Applicant: EPISTAR CORPORATION

    Inventor： Chien-Liang LIU ,  Ming-Chi HSU ,  Jen-Chieh YU

    IPC: H01L33/60 ,  H01L33/50

    CPC classification number: H01L33/60 ,  H01L33/486 ,  H01L33/505

    Abstract: This disclosure discloses a light-emitting device. The light-emitting device includes a light-emitting stack with a first (top) surface, a bottom surface and at least one side surface connected to the first surface and the bottom surface, a light-reflective enclosure with a second (top) surface, a contact electrode formed on the bottom surface of the light-emitting layer, and a wavelength converting layer. Moreover, the light-reflective enclosure surrounds the side surface of the light-emitting stack and exposes to the first surface. The wavelength converting layer covers the first surface and the second surface. In addition, the second surface has a plurality of fine concave structures distributed on the second surface.

    Abstract translation: 本公开公开了一种发光装置。 发光装置包括具有第一（顶部）表面，底表面和连接到第一表面和底表面的至少一个侧表面的发光叠层，具有第二（顶部）表面的光反射外壳 形成在发光层的底面上的接触电极和波长转换层。 此外，光反射外壳围绕发光叠层的侧表面并暴露于第一表面。 波长转换层覆盖第一表面和第二表面。 此外，第二表面具有分布在第二表面上的多个细凹形结构。

    LIGHT EMITTING BULB
    16.
    发明申请
    LIGHT EMITTING BULB 有权

    公开(公告)号：US20210381659A1

    公开(公告)日：2021-12-09

    申请号：US17367820

    申请日：2021-07-06

    Applicant: EPISTAR CORPORATION

    Inventor： Chiu-Lin YAO ,  Min-Hsun HSIEH ,  Been-Yu LIAW ,  Wei-Chiang HU ,  Po-Hung LAI ,  Chun-Hung LIU ,  Shih-An LIAO ,  Yu-His SUNG ,  Ming-Chi HSU

    IPC: F21K9/235 ,  H01L25/075 ,  F21K9/232

    Abstract: This disclosure discloses a light-emitting bulb. The light-emitting bulb includes a cover, an electrical associated with the cover, a board arranged between the cover and the electrical connector, and a first light-emitting device disposed on the board. The first light-emitting device includes a carrier having a first side and a second side, a first electrode part disposed near the first side and extending to the second side, a bended part disposed near to the second side and spaced apart from the first electrode part, and a second electrode part extending from the bended part to the first side. No light-emitting diode unit is arranged on the second electrode part.

    SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THEREOF
    18.
    发明申请
    SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THEREOF 有权

    公开(公告)号：US20210151405A1

    公开(公告)日：2021-05-20

    申请号：US17163746

    申请日：2021-02-01

    Applicant: EPISTAR CORPORATION

    Inventor： Shih-An LIAO ,  Shau-Yi CHEN ,  Ming-Chi HSU ,  Chun-Hung LIU ,  Min-Hsun HSIEH

    IPC: H01L23/00 ,  H01L33/62

    Abstract: A semiconductor device comprises a semiconductor die, comprising a stacking structure, a first bonding pad with a first bonding surface positioned away from the stack structure, and a second bonding pad; a carrier comprising a connecting surface; a third bonding pad which comprises a second bonding surface and is arranged on the connecting surface, and a fourth bonding pad arranged on the connecting surface of the carrier; and a conductive connecting layer comprising a first conductive part, comprising a first outer contour, and formed between and directly contacting the first bonding pad and the third bonding pad; a second conductive part formed between the second bonding pad and the fourth bonding pad; and a blocking part covering the first conductive part to form a covering area, wherein the first bonding surface comprises a first position which is the closest to the carrier within the covering area and a second position which is the farthest from the carrier within the covering area in a cross section view, and a distance from the first position to the first out contour is greater than that from the second position to the first outer contour.

    METHOD OF MAKING A LIGHT EMITTING DEVICE AND A LIGHT EMITTING DEVICE MADE THEREOF
    20.
    发明申请
    METHOD OF MAKING A LIGHT EMITTING DEVICE AND A LIGHT EMITTING DEVICE MADE THEREOF 有权
    制造发光装置的方法及其发光装置

    公开(公告)号：US20150214419A1

    公开(公告)日：2015-07-30

    申请号：US14678700

    申请日：2015-04-03

    Applicant: Epistar Corporation

    Inventor： Ming-Chi HSU ,  Chih-Ming WANG ,  Chien-Yuan WANG

    IPC: H01L33/00

    CPC classification number: H01L33/005 ,  H01L33/0095 ,  H01L33/505 ,  H01L2224/48463 ,  H01L2224/49107 ,  H01L2933/0025 ,  H01L2933/0041

    Abstract: This disclosure discloses a method of making a light-emitting device. The method comprises forming a plurality of light-emitting chips, wherein each of the light-emitting chips comprising an epitaxial structure and an electrode formed on the epitaxial structure; forming a protection layer on the electrode in each of the light-emitting chips; forming a plurality of light-emitting groups by collecting the light-emitting chips, wherein each of the light-emitting groups having substantially the same opto-electrical characteristics; forming a wavelength converted layer in each of the light-emitting groups to cover the epitaxial structure and the protection layer; and removing the wavelength converted layer on the protection layer to expose the protection layer.

    Abstract translation: 本公开公开了一种制造发光器件的方法。 该方法包括形成多个发光芯片，其中每个发光芯片包括外延结构和形成在外延结构上的电极; 在每个发光芯片中的电极上形成保护层; 通过收集发光芯片形成多个发光基团，其中每个发光基团具有基本上相同的光电特性; 在每个发光基团中形成波长转换层以覆盖外延结构和保护层; 以及去除保护层上的波长转换层以使保护层露出。

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