Light-emitting device
    11.
    发明授权

    公开(公告)号:US09601667B2

    公开(公告)日:2017-03-21

    申请号:US15004450

    申请日:2016-01-22

    Abstract: A light-emitting device is provided. The light-emitting device comprises: a light-emitting stack having an active layer; an electrode structure on the light-emitting stack and comprising a first electrode and an extension electrode protruding from the first electrode toward an edge of the light-emitting device in a first extending direction; a transparent insulating layer between the light-emitting stack and the electrode structure, wherein the transparent insulating layer comprises a first part and an extension part protruding from the first part toward the edge of the light-emitting device in a second extending direction; wherein a surface area of a surface of the first electrode distal from the transparent insulating layer is smaller than a surface area of a surface of the transparent insulating layer distal from the light-emitting stack, the first electrode is right above the first part, and a part of the extension electrode is right above the extension part.

    Light-emitting device
    12.
    发明授权
    Light-emitting device 有权
    发光装置

    公开(公告)号:US09276176B2

    公开(公告)日:2016-03-01

    申请号:US14515147

    申请日:2014-10-15

    Abstract: A light-emitting device comprises: a light-emitting stack having an active layer; a transparent insulating layer on the light-emitting stack; and an electrode structure having a first electrode on the transparent insulating layer; wherein a surface area of a surface of the first electrode distal from the transparent insulating layer is smaller than a surface area of a surface of the transparent insulating layer distal from the light-emitting stack, the refractive index of the transparent insulating layer is between 1 and 3.4 both inclusive, and the transmittance of the transparent insulating layer is greater than 80%.

    Abstract translation: 发光装置包括:具有活性层的发光叠层; 在发光叠层上的透明绝缘层; 以及在透明绝缘层上具有第一电极的电极结构; 其中,所述第一电极的远离所述透明绝缘层的表面的表面积小于远离所述发光层的所述透明绝缘层的表面的表面积,所述透明绝缘层的折射率在1 和3.4,并且透明绝缘层的透射率大于80%。

    Semiconductor device and package structure

    公开(公告)号:US11227978B2

    公开(公告)日:2022-01-18

    申请号:US16680214

    申请日:2019-11-11

    Abstract: A semiconductor device and a package structure are provided. The semiconductor device includes a substrate, a light-emitting structure, a first semiconductor layer, a second semiconductor layer and a first electrode. The light-emitting structure is on the substrate. The first semiconductor layer is on the light-emitting structure. The second semiconductor layer is between the first semiconductor layer and the light-emitting structure. The first electrode is on the second semiconductor layer. At least a portion of the first electrode is separated from the first semiconductor layer.

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