公开(公告)号：US20190237637A1

公开(公告)日：2019-08-01

申请号：US16262116

申请日：2019-01-30

Applicant: EPISTAR CORPORATION

Inventor： Ching-Tai CHENG ,  Shau-Yi CHEN ,  Yih-Hua RENN ,  Wei-Shan HU ,  Pei-Hsuan LAN

IPC: H01L33/50 ,  H01L25/075 ,  H01L33/60 ,  H01L33/44

Abstract: The application discloses a light-emitting device including a carrier, a light-emitting element and a connecting structure. The carrier includes a first connecting portion and a first necking portion extended from the first connecting portion. The first connecting portion has a first width, and the first necking portion has a second width. The second width is less than the first width. The light-emitting element includes a first light-emitting layer being able to emit a first light and a first contacting electrode formed under the first light-emitting layer. The first contacting electrode is corresponded to the first connecting portion. The connecting structure includes a first electrical connecting portion and a protecting portion surrounding the first electrical connecting portion. The first electrical connecting portion is electrically connected to the first connecting portion and the first contacting electrode. The first connecting portion substantially is located within a range surrounded by the protecting portion.

公开(公告)号：US20180062043A1

公开(公告)日：2018-03-01

申请号：US15686314

申请日：2017-08-25

Applicant: EPISTAR CORPORATION

Inventor： Chang-Tai HISAO ,  I-Lun MA ,  Hao-Yu CHEN ,  Shu-Fen HU ,  Ru-Shi LIU ,  Chih-Ming WANG ,  Chun-Yuan CHEN ,  Yih-Hua RENN ,  Chien-Hsin WANG ,  Yung-Hsiang LIN

IPC: H01L33/42 ,  H01L33/32

Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer emitting an UV light, formed between the first semiconductor layer and the second semiconductor layer; a first transparent conductive layer formed on the second semiconductor layer, the first transparent conductive layer including metal oxide; and a second transparent conductive layer formed on the first transparent conductive layer, the second transparent conductive layer including graphene, wherein the first transparent conductive layer is continuously formed over a top surface of the second semiconductor layer, the first transparent conductive layer comprises a thickness smaller than 10 nm.

公开(公告)号：US20150349231A1

公开(公告)日：2015-12-03

申请号：US14721599

申请日：2015-05-26

Applicant: EPISTAR CORPORATION

Inventor： Min-Hsun HSIEH ,  Biing-Jye LEE ,  Yih-Hua RENN ,  Jai-Tai KUO

IPC: H01L33/64 ,  H01L33/52 ,  H01L33/36 ,  H01L33/60

CPC classification number: H01L33/62 ,  H01L33/486 ,  H01L33/50 ,  H01L33/507 ,  H01L33/52 ,  H01L33/54 ,  H01L33/56 ,  H01L33/60 ,  H01L33/641 ,  H01L33/642 ,  H01L33/647 ,  H01L2224/16245 ,  H01L2924/181 ,  H01L2924/00012

Abstract: This disclosure discloses a light-emitting device. The light-emitting device includes: a heat-dissipating structure having a first part and a second part separated from the first part; a light-emitting unit including a light-emitting element with a first pad formed on the first part; and a first transparent enclosing the light-emitting element and having a sidewall; and an adhesive material covering a portion of the sidewall.

Abstract translation: 本公开公开了一种发光装置。 发光装置包括：散热结构，其具有与第一部分分离的第一部分和第二部分; 发光单元，其包括形成在所述第一部分上的具有第一焊盘的发光元件; 以及封闭所述发光元件并具有侧壁的第一透明体; 以及覆盖侧壁的一部分的粘合材料。

公开(公告)号：US20150287892A1

公开(公告)日：2015-10-08

申请号：US14680631

申请日：2015-04-07

Applicant: Epistar Corporation

Inventor： Cheng-Nan HAN ,  Yih-Hua RENN

IPC: H01L33/50 ,  H01L27/15 ,  H01L33/64

CPC classification number: H01L33/505 ,  F21K9/00 ,  F21K9/232 ,  F21Y2103/10 ,  F21Y2115/10 ,  H01L25/0753 ,  H01L33/641 ,  H01L2224/18 ,  H01L2224/24 ,  H01L2224/24137 ,  H01L2224/73267 ,  H01L2224/82 ,  H01L2224/92244 ,  H01L2924/15156

Abstract: This disclosure discloses a light-emitting device. The light-emitting device comprises a substrate comprising a recess and an upper surface wherein the substrate is thermal conductive and transparent; a wavelength converting layer covering the recess and the upper surface of the substrate; and a light-emitting diode arranged in the recess and over the wavelength converting layer.

Abstract translation: 本公开公开了一种发光装置。 所述发光装置包括：衬底，其包括凹部和上表面，其中所述衬底是导热和透明的; 覆盖所述凹部和所述基板的上表面的波长转换层; 以及布置在凹部中并在波长转换层上方的发光二极管。

公开(公告)号：US20250006864A1

公开(公告)日：2025-01-02

申请号：US18756777

申请日：2024-06-27

Applicant: EPISTAR CORPORATION

Inventor： Yi-Chieh LIN ,  Shih-Chang LEE ,  Wei-Chu LIAO ,  Mei-Chun LIU ,  Hui-Ching FENG ,  Zhen-Kai KAO ,  Yih-Hua RENN ,  Min-Hsun HSIEH

IPC: H01L33/30 ,  H01L33/38

Abstract: A semiconductor device is provided, which includes an epitaxial structure, a first contact electrode and a second contact electrode. The epitaxial structure includes a first semiconductor structure, a second semiconductor structure and an active region. The first semiconductor structure includes a first semiconductor contact layer. The second semiconductor structure includes a second semiconductor contact layer. The active region is located between the first semiconductor structure and the second semiconductor structure. The first contact electrode is located on the second semiconductor contact layer and directly contacts the first semiconductor contact layer. The second contact electrode is located on the second semiconductor contact layer and directly contacts the second semiconductor contact layer. The first semiconductor contact layer has a conductivity type of n-type and includes a first group III-V semiconductor material. The second semiconductor contact layer has a conductivity type of p-type and includes a second group III-V semiconductor material.

公开(公告)号：US20200373468A1

公开(公告)日：2020-11-26

申请号：US16990121

申请日：2020-08-11

Applicant: EPISTAR CORPORATION

Inventor： Ching-Tai CHENG ,  Shau-Yi CHEN ,  Yih-Hua RENN ,  Wei-Shan HU ,  Pei-Hsuan LAN

IPC: H01L33/50 ,  H01L25/075 ,  H01L33/44 ,  H01L33/60

Abstract: The application discloses a light-emitting device including a carrier, a light-emitting element and a connecting structure. The carrier includes a first connecting portion and a first necking portion extended from the first connecting portion. The first connecting portion has a first width, and the first necking portion has a second width. The second width is less than the first width. The light-emitting element includes a first light-emitting layer being able to emit a first light and a first contacting electrode formed under the first light-emitting layer. The first contacting electrode is corresponded to the first connecting portion. The connecting structure includes a first electrical connecting portion and a protecting portion surrounding the first electrical connecting portion. The first electrical connecting portion is electrically connected to the first connecting portion and the first contacting electrode. The first connecting portion substantially is located within a range surrounded by the protecting portion.

公开(公告)号：US20190221728A1

公开(公告)日：2019-07-18

申请号：US16250774

申请日：2019-01-17

Applicant: EPISTAR CORPORATION

Inventor： Jen-Chieh YU ,  Yih-Hua RENN ,  Hsin-Mao LIU ,  Lung-Kuan LAI ,  Ching-Tai CHENG

IPC: H01L33/50 ,  H01L33/58 ,  H01L25/13

CPC classification number: H01L33/507 ,  H01L25/13 ,  H01L33/58

Abstract: An embodiment of present disclosure discloses a light-emitting device which includes a first light-emitting unit, a second light-emitting unit, a first optic structure, a second optic structure, a first light-transmitting structure, a second light-transmitting structure, and a light-blocking structure. The first optic structure covers a top surface and a side surface of the first light-emitting unit, the second optic structure covers a top surface and a side surface of the second light-emitting unit. The first light-transmitting structure covers the first optic structure. The second light-transmitting structure covers the second optic structure. The light-blocking structure surrounds the first light-emitting unit and the second light-emitting unit, and covers the side surfaces of the first optic structure, the second optic structure, the first light-transmitting structure and the second light-transmitting structure.

公开(公告)号：US20190207069A1

公开(公告)日：2019-07-04

申请号：US16298648

申请日：2019-03-11

Applicant: EPISTAR CORPORATION

Inventor： Lung-Kuan LAI ,  Ching-Tai CHENG ,  Yih-Hua RENN ,  Min-Hsun HSIEH ,  Chun-Hung LIU ,  Shih-An LIAO ,  Ming-Chi HSU ,  Yu Chen LIAO

IPC: H01L33/60 ,  H01L33/54 ,  H01L25/075 ,  H01L33/62 ,  H01L33/46 ,  H01L33/50 ,  H01L33/38 ,  F21V8/00

CPC classification number: H01L33/60 ,  G02B6/0051 ,  G02B6/0073 ,  H01L25/0753 ,  H01L33/385 ,  H01L33/46 ,  H01L33/505 ,  H01L33/507 ,  H01L33/54 ,  H01L33/62 ,  H01L2224/04105 ,  H01L2224/18 ,  H01L2224/96 ,  H01L2924/1815 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0041 ,  H01L2933/0058 ,  H01L2933/0066

Abstract: A light-emitting device includes a light body having an internal electrode layer, and a conductive layer. The conductive layer has a first portion formed on the internal electrode layer and overlapping the light body in a first direction, and a second portion overlapping the light body in a second direction. The first direction is perpendicular to the second direction.

公开(公告)号：US20180076369A1

公开(公告)日：2018-03-15

申请号：US15699598

申请日：2017-09-08

Applicant: EPISTAR CORPORATION

Inventor： Ching-Tai CHENG ,  Lung-Kuan LAI ,  Yih-Hua RENN ,  Min-Hsun HSIEH

IPC: H01L33/62 ,  H01L33/54 ,  H01L33/64

CPC classification number: H01L33/62 ,  H01L25/0753 ,  H01L33/54 ,  H01L33/647 ,  H01L2933/0033 ,  H01L2933/0066

Abstract: A light-emitting device includes a light-emitting element, a light pervious layer, an electrode defining layer, a first soldering pad and a second soldering pad. The light-emitting element has an upper surface, a bottom surface, and a lateral surface arranged between the upper surface and the bottom surface. The light pervious layer covers the upper surface and the lateral surface. The electrode defining layer covers a part of the light pervious layer. The first soldering pad and the second soldering pad are surrounded by the electrode defining layer. A gap is located between the first soldering pad and the second soldering pad while the gap remains substantially constant.

公开(公告)号：US20170222102A1

公开(公告)日：2017-08-03

申请号：US15395917

申请日：2016-12-30

Applicant: EPISTAR CORPORATION

Inventor： Ching-Tai CHENG ,  Chun-Hua SHIH ,  Yih-Hua RENN

IPC: H01L33/50 ,  H01L33/60 ,  H01L33/48 ,  H01L33/62

CPC classification number: H01L33/508 ,  H01L33/483 ,  H01L33/505 ,  H01L33/60 ,  H01L33/62 ,  H01L2933/0041

Abstract: A light-emitting device includes a light-emitting element, a wavelength conversion layer and a light pervious element. The light-emitting element includes a top surface, a bottom surface, a plurality of side surfaces connecting to the top surface and the bottom surface, and a first electrical contact formed on the bottom surface. The wavelength conversion layer covers the top surface of the light-emitting element to form a first thickness, has an average thickness, and includes a transparent binder and a plurality of wavelength conversion particles having an equivalent particle diameter D50. The light pervious element includes a light exiting surface and is disposed on the wavelength conversion layer. The D50 of the wavelength conversion particles is not great than 10 μm. A ratio of the average thickness to the D50 of the wavelength conversion layer is ranged from 6 to 20.