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    LIGHT-EMITTING DEVICE
    2.
    发明申请
    LIGHT-EMITTING DEVICE 审中-公开

    公开(公告)号：US20190214524A1

    公开(公告)日：2019-07-11

    申请号：US16358352

    申请日：2019-03-19

    Applicant: EPISTAR CORPORATION

    Inventor： Yi-Chieh LIN

    IPC: H01L33/00 ,  H01L33/26 ,  H01L33/30 ,  H01L33/06 ,  H01L33/12

    CPC classification number: H01L33/0025 ,  H01L33/06 ,  H01L33/12 ,  H01L33/26 ,  H01L33/30 ,  H01L33/38

    Abstract: A light-emitting device includes an active structure, wherein the active structure includes a well layer and a barrier layer. A first semiconductor layer of first conductivity type and a second semiconductor layer of second conductivity type sandwich the active structure. A first intermediate layer is between the first semiconductor layer and the active structure, wherein the first semiconductor layer has a first band gap, the second semiconductor layer has a second band gap, the well layer has a third band gap, and the first intermediate layer has a fourth band gap, wherein the first band gap and the second band gap are both larger than the fourth band gap, and the fourth band gap is larger than the third band gap. A first window layer is on the first semiconductor layer, wherein the first intermediate layer includes Alz1Ga1−z1As, the first window layer includes Alz2Ga1−z2As, and z1>z2.

    LIGHT-EMITTING DEVICE
    3.
    发明申请
    LIGHT-EMITTING DEVICE 审中-公开

    公开(公告)号：US20180248073A1

    公开(公告)日：2018-08-30

    申请号：US15965397

    申请日：2018-04-27

    Applicant: EPISTAR CORPORATION

    Inventor： Yi-Chieh LIN

    IPC: H01L33/00 ,  H01L33/26 ,  H01L33/30 ,  H01L33/06 ,  H01L33/12 ,  H01L33/38

    CPC classification number: H01L33/0025 ,  H01L33/06 ,  H01L33/12 ,  H01L33/26 ,  H01L33/30 ,  H01L33/38

    Abstract: A light-emitting device includes an active structure, wherein the active structure includes a well layer and a barrier layer. A first semiconductor layer of first conductivity type and a second semiconductor layer of second conductivity type sandwich the active structure. A first intermediate layer is between the first semiconductor layer and the active structure, wherein the first semiconductor layer has a first band gap, the second semiconductor layer has a second band gap, the well layer has a third band gap, and the first intermediate layer has a fourth band gap, wherein the first band gap and the second band gap are both larger than the fourth band gap, and the fourth band gap is larger than the third band gap. A first window layer is on the first semiconductor layer, wherein the first intermediate layer includes Alz1Ga1-z1As, the first window layer includes Alz2Ga1-z2As, and z1>z2.

    LIGHT-EMITTING DEVICE
    5.
    发明申请
    LIGHT-EMITTING DEVICE 有权

    公开(公告)号：US20170279004A1

    公开(公告)日：2017-09-28

    申请号：US15621502

    申请日：2017-06-13

    Applicant: EPISTAR CORPORATION

    Inventor： Yi-Chieh LIN

    IPC: H01L33/00 ,  H01L33/06 ,  H01L33/12 ,  H01L33/26 ,  H01L33/30 ,  H01L33/38

    CPC classification number: H01L33/0025 ,  H01L33/06 ,  H01L33/12 ,  H01L33/26 ,  H01L33/30 ,  H01L33/38

    Abstract: A light-emitting device is provided. The light-emitting device comprises: an active structure, the active structure comprising alternate well layers and barrier layers, wherein each of the well layers comprises multiple different elements of group VA; a first semiconductor layer of first conductivity type and a second semiconductor layer of second conductivity type sandwiching the active structure; an intermediate layer interposed between the first semiconductor layer and the active structure; and a first window layer on the first semiconductor layer, wherein the intermediate layer comprises Alz1Ga1-z1As, the first window layer comprises Alz2Ga1-z2As, and z1>z2.

    METHOD FOR MAKING LIGHT-EMITTING DEVICE
    6.
    发明申请
    METHOD FOR MAKING LIGHT-EMITTING DEVICE 有权
    制造发光装置的方法

    公开(公告)号：US20160149072A1

    公开(公告)日：2016-05-26

    申请号：US14550016

    申请日：2014-11-21

    Applicant: EPISTAR CORPORATION

    Inventor： Chih-Chiang LU ,  Yi-Chieh LIN ,  Wen-Luh LIAO ,  Shou-Lung CHEN ,  Chien-Fu HUANG

    IPC: H01L33/00 ,  H01L33/08 ,  H01L33/10

    CPC classification number: H01L33/08 ,  H01L27/15 ,  H01L33/005 ,  H01L33/0062 ,  H01L33/10 ,  H01L33/50 ,  H01L33/56 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0058 ,  H01L2933/0066 ,  H01L2924/00014

    Abstract: A method for making a light-emitting device comprises the steps of: providing a growth substrate; forming a first light-emitting semiconductor stack on the growth substrate by epitaxial growth, and the first light-emitting semiconductor stack comprises a first active layer; forming a Distributed Bragg reflector on the first light-emitting semiconductor stack by epitaxial growth; forming a second light-emitting semiconductor stack on the Distributed Bragg reflector by epitaxial growth, and the second light-emitting semiconductor stack comprises a second active layer; and wherein the first active layer emits a first radiation of a first dominant wavelength, and the second active layer emits a second radiation of a second dominant wavelength longer than the first dominant wavelength.

    Abstract translation: 制造发光器件的方法包括以下步骤：提供生长衬底; 通过外延生长在生长衬底上形成第一发光半导体堆叠，并且第一发光半导体堆叠包括第一有源层; 通过外延生长在第一发光半导体堆叠上形成分布布拉格反射器; 通过外延生长在所述分布式布拉格反射器上形成第二发光半导体堆叠，并且所述第二发光半导体堆叠包括第二有源层; 并且其中所述第一有源层发射第一主波长的第一辐射，并且所述第二有源层发射比所述第一主波长长的第二主波长的第二辐射。

    LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
    7.
    发明申请
    LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF 有权
    发光装置及其制造方法

    公开(公告)号：US20150108494A1

    公开(公告)日：2015-04-23

    申请号：US14520067

    申请日：2014-10-21

    Applicant: EPISTAR CORPORATION

    Inventor： Wen-Luh LIAO ,  Chih-Chiang LU ,  Shih-Chang LEE ,  Hung-Ta CHENG ,  Hsin-Chan CHUNG ,  Yi-Chieh LIN

    IPC: H01L33/00 ,  H01L33/42 ,  H01L33/30

    CPC classification number: H01L33/20 ,  H01L33/0062 ,  H01L33/0079 ,  H01L2933/0091

    Abstract: The present disclosure provides a light-emitting device and manufacturing method thereof. The light-emitting device comprising: a light-emitting stack; and a semiconductor layer having a first surface connecting to the light-emitting stack, a second surface opposite to the first surface, and a void; wherein the void comprises a bottom part near the first surface and an opening on the second surface, and a dimension of the bottom part is larger than the dimension of the opening.

    Abstract translation: 本发明提供一种发光装置及其制造方法。 该发光装置包括：发光叠层; 以及半导体层，其具有连接到所述发光叠层的第一表面，与所述第一表面相对的第二表面和空隙; 其中所述空隙包括靠近所述第一表面的底部部分和所述第二表面上的开口，并且所述底部部分的尺寸大于所述开口的尺寸。

    SEMICONDUCTOR DEVICE
    8.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20250006864A1

    公开(公告)日：2025-01-02

    申请号：US18756777

    申请日：2024-06-27

    Applicant: EPISTAR CORPORATION

    Inventor： Yi-Chieh LIN ,  Shih-Chang LEE ,  Wei-Chu LIAO ,  Mei-Chun LIU ,  Hui-Ching FENG ,  Zhen-Kai KAO ,  Yih-Hua RENN ,  Min-Hsun HSIEH

    IPC: H01L33/30 ,  H01L33/38

    Abstract: A semiconductor device is provided, which includes an epitaxial structure, a first contact electrode and a second contact electrode. The epitaxial structure includes a first semiconductor structure, a second semiconductor structure and an active region. The first semiconductor structure includes a first semiconductor contact layer. The second semiconductor structure includes a second semiconductor contact layer. The active region is located between the first semiconductor structure and the second semiconductor structure. The first contact electrode is located on the second semiconductor contact layer and directly contacts the first semiconductor contact layer. The second contact electrode is located on the second semiconductor contact layer and directly contacts the second semiconductor contact layer. The first semiconductor contact layer has a conductivity type of n-type and includes a first group III-V semiconductor material. The second semiconductor contact layer has a conductivity type of p-type and includes a second group III-V semiconductor material.

    LIGHT-EMITTING DEVICE
    10.
    发明申请
    LIGHT-EMITTING DEVICE 有权

    公开(公告)号：US20180069157A1

    公开(公告)日：2018-03-08

    申请号：US15796241

    申请日：2017-10-27

    Applicant: EPISTAR CORPORATION

    Inventor： Chih-Chiang LU ,  Yi-Chieh LIN ,  Rong-Ren LEE ,  Yu-Ren PENG ,  Ming-Siang HUANG ,  Ming-Ta CHIN ,  Yi-Ching LEE

    IPC: H01L33/46 ,  H01L25/075 ,  H01L33/60

    CPC classification number: H01L33/46 ,  H01L25/0753 ,  H01L33/04 ,  H01L33/10 ,  H01L33/60

    Abstract: A light-emitting device is provided. comprises: a light-emitting stack comprising an active layer emitting a first light having a first peak wavelength λ nm; and an adjusting element stacked on and electrically connected to the active layer, wherein the adjusting element comprises a diode emitting a second light having a second peak wavelength between 800 nm and 1900 nm; wherein a forward voltage of the light-emitting device is between (1240/0.8λ) volt and (1240/0.5λ) volt, and a ratio of the intensity of the first light emitted from the active layer at the first peak wavelength to the intensity of the second light emitted from the diode at the second peak wavelength is greater than 10 and not greater than 1000.

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