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公开(公告)号：US06632576B2
公开(公告)日：2003-10-14
申请号：US09751175
申请日：2000-12-30
Applicant: Edita Tejnil
Inventor： Edita Tejnil
IPC: G03F900
Abstract: The present invention claims a binary mask printing a product feature which includes a narrow space; and a phase-shifting mask having an assist feature that fits within the narrow space when both masks are properly aligned in exposing a wafer.
Abstract translation: 本发明要求二进制掩模印刷包括狭窄空间的产品特征; 以及具有辅助特征的相移掩模，当两个掩模在曝光晶片时被适当对准时，该辅助特征适合于狭窄的空间。
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公开(公告)号：US20100082313A1
公开(公告)日：2010-04-01
申请号：US12416044
申请日：2009-03-31
Applicant: Edita Tejnil
Inventor： Edita Tejnil
IPC: G06G7/58
CPC classification number: G03F7/705 , G01N21/95607
Abstract: Various implementations of the invention provide methods and apparatus for calibrating models of an optical lithographic process. In various implementations, a complete model of an optical lithographic process may be formed by combining different physical ranges and components describing the optical lithographic process. With various implementations of the invention, an optical lithographic process model may be calibrated by generating and applying a set of test patterns to the optical lithographic process, identifying test patterns and associated measured results that correspond to the discrete components of the optical lithographic model, calibrating the discrete components of the optical lithographic model based on the identified test patterns and measured results, and combining the calibrated components into a complete model. In some implementations of the invention, the discrete components of the optical lithographic model represent different physical effects of the optical lithographic process. Alternately or additionally, with various implementations of the invention the generated test patterns may include test structures sensitive to proximity effects, long-range pattern density, and long-range process non-uniformity.
Abstract translation: 本发明的各种实现提供了用于校准光学光刻工艺的模型的方法和装置。 在各种实施方式中，可以通过组合描述光学平版印刷工艺的不同物理范围和组件来形成光学光刻工艺的完整模型。 通过本发明的各种实施方案，光学光刻工艺模型可以通过生成和应用一组测试图案到光学光刻工艺来校准，识别与光学平版印刷机模型的分立组件对应的测试图案和相关联的测量结果，校准 基于识别的测试图案和测量结果的光学光刻模型的分立组件，并将校准的组件组合成一个完整的模型。 在本发明的一些实施方案中，光学光刻模型的分立组件表示光学光刻工艺的不同物理效应。 替代地或附加地，通过本发明的各种实施方案，生成的测试图案可以包括对邻近效应，远程图案密度和远程过程不均匀性敏感的测试结构。
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公开(公告)号：US07438997B2
公开(公告)日：2008-10-21
申请号：US10846403
申请日：2004-05-14
Applicant: Edita Tejnil , Yan Borodovsky
Inventor： Edita Tejnil , Yan Borodovsky
CPC classification number: G03F1/80 , G03F1/28 , G03F1/32 , G03F7/70283 , G03F7/70291 , G03F7/70433
Abstract: Systems and techniques for lithography. In one aspect, a method includes producing a microelectronic device by modulating an intensity and a phase of the zero diffraction order of a radiation with a device including subwavelength features having a pitch dimension smaller than one wavelength of the radiation.
Abstract translation: 光刻系统和技术。 一方面，一种方法包括通过用包括具有小于辐射的一个波长的间距尺寸的亚波长特征的器件来调制辐射的零衍射级的强度和相位来产生微电子器件。
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14.发明申请Method, program product and apparatus for creating optimal test patterns for optical model calibration and for selecting suitable calibration test patterns from an arbitrary layout 有权用于创建光学模型校准的最佳测试图案并从任意布局中选择合适的校准测试图案的方法，程序产品和设备公开(公告)号：US20080068667A1
公开(公告)日：2008-03-20
申请号：US11889574
申请日：2007-08-14
Applicant: Edita Tejnil
Inventor： Edita Tejnil
IPC: H04N1/46
CPC classification number: H04N1/6033
Abstract: A method of determining calibration test patterns to be utilized to calibrate a model for simulating the imaging performance of an optical imaging system. The method includes the steps of defining a model equation representing the imaging performance of the optical imaging system; transforming the model equation into a plurality of discrete functions; identifying a calibration pattern for each of the plurality of discrete functions, where each calibration pattern corresponding to one of the plurality of discrete functions being operative for manipulating the one of the plurality of discrete functions during a calibration process; and storing the calibration test patterns identified as corresponding to the plurality of discrete functions. The calibration test patterns are then utilized to calibrate the model for simulating the imaging performance of an optical imaging system.
Abstract translation: 确定用于校准用于模拟光学成像系统的成像性能的模型的校准测试图案的方法。 该方法包括以下步骤：定义表示光学成像系统的成像性能的模型方程; 将模型方程转换为多个离散函数; 识别所述多个离散函数中的每一个的校准模式，其中对应于所述多个离散函数中的一个的每个校准模式可用于在校准过程期间操纵所述多个离散函数中的一个; 以及存储被识别为对应于所述多个离散函数的校准测试模式。 然后使用校准测试图案来校准用于模拟光学成像系统的成像性能的模型。
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15.发明授权Method for correcting focus-dependent line shifts in printing with sidewall chrome alternating aperture masks (SCAAM) 有权用侧壁铬交替孔径掩模（SCAAM）进行打印中的重点相关线偏移的校正方法公开(公告)号：US07326501B2
公开(公告)日：2008-02-05
申请号：US10386141
申请日：2003-03-10
Applicant: Edita Tejnil
Inventor： Edita Tejnil
IPC: G03F9/00
CPC classification number: G03F1/30
Abstract: A lithography system may utilize a biased sidewall chrome alternating aperture mask (SCAAM). Glass steps in the mask may be positioned at the center of the chrome sidewalls in chrome lines rather than the center of the chrome lines themselves.
Abstract translation: 光刻系统可以利用偏置的侧壁铬交替孔径掩模（SCAAM）。 面罩中的玻璃台阶可以定位在镀铬线的镀铬侧壁的中心，而不是铬线本身的中心。
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Patent Agency Ranking
16.发明授权Method, program product and apparatus for creating optimal test patterns for optical model calibration and for selecting suitable calibration test patterns from an arbitrary layout 有权用于创建光学模型校准的最佳测试图案并从任意布局中选择合适的校准测试图案的方法，程序产品和设备公开(公告)号：US08792147B2
公开(公告)日：2014-07-29
申请号：US11889574
申请日：2007-08-14
Applicant: Edita Tejnil
Inventor： Edita Tejnil
IPC: H04N1/46
CPC classification number: H04N1/6033
Abstract: A method of determining calibration test patterns to be utilized to calibrate a model for simulating the imaging performance of an optical imaging system. The method includes the steps of defining a model equation representing the imaging performance of the optical imaging system; transforming the model equation into a plurality of discrete functions; identifying a calibration pattern for each of the plurality of discrete functions, where each calibration pattern corresponding to one of the plurality of discrete functions being operative for manipulating the one of the plurality of discrete functions during a calibration process; and storing the calibration test patterns identified as corresponding to the plurality of discrete functions. The calibration test patterns are then utilized to calibrate the model for simulating the imaging performance of an optical imaging system.
Abstract translation: 确定用于校准用于模拟光学成像系统的成像性能的模型的校准测试图案的方法。 该方法包括以下步骤：定义表示光学成像系统的成像性能的模型方程; 将模型方程转换为多个离散函数; 识别所述多个离散函数中的每一个的校准模式，其中对应于所述多个离散函数中的一个的每个校准模式可用于在校准过程期间操纵所述多个离散函数中的一个; 以及存储被识别为对应于所述多个离散函数的校准测试模式。 然后使用校准测试图案来校准用于模拟光学成像系统的成像性能的模型。
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17.发明申请Method of performing multiple stage model calibration for optical imaging simulation models 有权对光学成像模拟模型进行多级模型校准的方法公开(公告)号：US20070213967A1
公开(公告)日：2007-09-13
申请号：US11708137
申请日：2007-02-20
Applicant: Sangbong Park , Duan-Fu Hsu , Edita Tejnil
Inventor： Sangbong Park , Duan-Fu Hsu , Edita Tejnil
IPC: G06G7/48
CPC classification number: G03F7/705
Abstract: A method of calibrating a simulation model of a photolithography process. The method includes the steps of defining a set of input data; defining a simulation model having model parameters which affect the simulation result produced by the simulation model; performing a first stage calibration process in which the model parameters and alignment parameters are adjusted such that the simulation result is within a first predefined error tolerance; and performing a second stage calibration process in which the alignment parameters are fixed and the model parameters are adjusted such that the simulation result is within a second predefined error tolerance.
Abstract translation: 校准光刻工艺的仿真模型的方法。 该方法包括定义一组输入数据的步骤; 定义具有影响仿真模型产生的仿真结果的模型参数的仿真模型; 执行第一阶段校准过程，其中调整模型参数和对准参数，使得模拟结果在第一预定义的误差容限内; 并且执行第二阶段校准过程，其中对准参数是固定的并且模型参数被调整以使得模拟结果在第二预定义的误差容限内。
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18.发明授权Method of generating optical assist features for two-mask exposure lithography 失效产生用于双掩模曝光光刻的光学辅助特征的方法公开(公告)号：US06800406B2
公开(公告)日：2004-10-05
申请号：US10622995
申请日：2003-07-18
Applicant: Edita Tejnil
Inventor： Edita Tejnil
IPC: G03F900
Abstract: The present invention claims a binary mask printing a product feature which includes a narrow space; and a phase-shifting mask having an assist feature that fits within the narrow space when both masks are properly aligned in exposing a wafer.
Abstract translation: 本发明要求二进制掩模印刷包括狭窄空间的产品特征; 以及具有辅助特征的相移掩模，当两个掩模在曝光晶片时被适当对准时，该辅助特征适合于狭窄的空间。
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公开(公告)号：US06774990B2
公开(公告)日：2004-08-10
申请号：US10226590
申请日：2002-08-23
Applicant: Ted Liang , Alan R. Stivers , Edita Tejnil
Inventor： Ted Liang , Alan R. Stivers , Edita Tejnil
IPC: G01N2100
CPC classification number: G01N21/6489 , G01N21/6458 , G01N21/66 , G01N21/956 , G01N2021/6419 , G01N2021/6421
Abstract: Inspecting a patterned surface using photoemission of electrons includes selecting materials of the patterned surface, selecting a light source to produce a difference in yield of photoelectrons from the materials, applying the light from the light source to the patterned surface, detecting the emission of photoelectrons from the patterned surface, and inspecting the patterned surface based on the detected photoelectron emissions.
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20.发明授权Method and apparatus for a reflective mask that is inspected at a first wavelength and exposed during semiconductor manufacturing at a second wavelength 失效用于以第一波长检查并在第二波长的半导体制造期间暴露的反射掩模的方法和装置公开(公告)号：US06506526B2
公开(公告)日：2003-01-14
申请号：US09899881
申请日：2001-07-05
Applicant: Alan R. Stivers , Edita Tejnil
Inventor： Alan R. Stivers , Edita Tejnil
IPC: G03F900
Abstract: A refelective mask having non-reflective and reflective regions. The reflective regions are reflective of light at an inspection wavelength and a semiconductor processing wavelength and the non-reflective regions are substantially non-reflective of light at the inspection wavelength and the semiconductor processing wavelength. The contrast of reflected light off of the non-reflective and reflective regions is greater than 0.210 at either of the two wavelengths.
Abstract translation: 具有非反射和反射区域的反射掩模。 反射区域在检查波长和半导体处理波长下反射光，并且非反射区域在检查波长和半导体处理波长处基本上不反射光。 非反射和反射区域的反射光的对比度在两个波长中的任一个处都大于0.210。
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