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    Excimer laser chamber device
    11.
    发明授权
    Excimer laser chamber device 有权

    公开(公告)号：US10050403B2

    公开(公告)日：2018-08-14

    申请号：US15680474

    申请日：2017-08-18

    Applicant: Gigaphoton Inc.

    Inventor： Hisakazu Katsuumi ,  Kazuya Takezawa ,  Kouji Kakizaki ,  Hiroaki Tsushima ,  Takeshi Asayama

    IPC: H01S3/038 ,  H01S3/225 ,  H01S3/0977 ,  H01S3/036 ,  H01S3/09

    Abstract: An excimer laser chamber device may include: a the laser chamber; a first electrode provided in the laser chamber; a second electrode provided in the laser chamber to face the first electrode; an electrode holder provided in the laser chamber to be connected to a high voltage; at least one connecting terminal including a first anchored portion anchored to the first electrode and a second anchored portion anchored to the electrode holder, the at least one connecting terminal being configured to electrically connect the first electrode and the electrode holder; a guide member held by the electrode holder, the guide member being configured to position the first electrode in a direction substantially perpendicular to both a direction of electric discharge between the first electrode and the second electrode and a longitudinal direction of the first electrode; and an electrode-gap-varying unit configured to move the first electrode in a direction substantially parallel to the direction of electric discharge.

    Two-beam interference apparatus and two-beam interference exposure system
    14.
    发明授权
    Two-beam interference apparatus and two-beam interference exposure system 有权
    双光束干涉仪和双光束干涉曝光系统

    公开(公告)号：US09507248B2

    公开(公告)日：2016-11-29

    申请号：US13681744

    申请日：2012-11-20

    Applicant: Gigaphoton Inc.

    Inventor： Shinji Okazaki ,  Hakaru Mizoguchi ,  Junichi Fujimoto ,  Takashi Matsunaga ,  Kouji Kakizaki ,  Osamu Wakabayashi

    IPC: G03F7/20 ,  G03B27/52

    CPC classification number: G03B27/522 ,  G03F7/70408

    Abstract: A two-beam interference apparatus may include a wafer stage on which a wafer may be set, a beam splitter to split first laser light into second and third laser light having a beam intensity distribution elongated in a first direction within a surface of the wafer, and an optical system to guide the second and third laser light onto the wafer. The wafer is irradiated with the second laser light from a second direction perpendicular to the first direction, and the third laser light from a third direction perpendicular to the first direction but different from the second direction, to thereby cause interference of the second and third laser light on the wafer. This apparatus increases the accuracy of the two-beam interference exposure.

    Abstract translation: 双光束干涉装置可以包括其上可以设置晶片的晶片台，分束器，用于将第一激光分离成具有沿晶片表面内的第一方向延伸的光束强度分布的第二和第三激光， 以及将第二和第三激光引导到晶片上的光学系统。 从垂直于第一方向的第二方向照射第二激光，从与第一方向垂直但与第二方向不同的第三方向照射第三激光，从而引起第二和第三激光的干涉 光在晶圆上。 该装置增加了双光束干涉曝光的精度。

    Gas discharge chamber
    16.
    发明授权
    Gas discharge chamber 有权
    气体放电室

    公开(公告)号：US08855167B2

    公开(公告)日：2014-10-07

    申请号：US13931840

    申请日：2013-06-29

    Applicant: Gigaphoton Inc.

    Inventor： Shinji Nagai ,  Fumika Yoshida ,  Osamu Wakabayashi ,  Kouji Kakizaki

    IPC: H01S3/08 ,  G02B5/30 ,  G02B1/02 ,  H01S3/034 ,  H01S3/081 ,  H01S3/225

    CPC classification number: H01S3/034 ,  G02B1/02 ,  G02B5/3091 ,  H01S3/0346 ,  H01S3/08054 ,  H01S3/0816 ,  H01S3/225 ,  H01S3/2251

    Abstract: A gas discharge chamber that uses a calcium fluoride crystal which reduces a breakage due to mechanical stress (window holder and laser gas pressure), thermal stress from light absorption, and the like, increases the degree of linear polarization of output laser, and suppresses degradation due to strong ultraviolet (ArF, in particular) laser light irradiation. A first window (2) and a second window (3) of the gas discharge chamber have an incident plane and an emitting plane in parallel with a (111) crystal plane of their calcium fluoride crystal. With respect to an arrangement where laser light entering the calcium fluoride crystal passes through a plane including a axis and a axis of each of the first window (2) and the second window (3) as seen from inside the chamber (1), the first window (2) and the second window (3) are arranged in positions rotated in the same direction by the same angle about their axis.

    Abstract translation: 使用减少由于机械应力（窗口保持器和激光气体压力）的破裂的氟化钙晶体，来自光吸收等的热应力的气体放电室增加了输出激光器的线性极化的程度，并抑制了劣化 由于强紫外线（特别是ArF）激光照射。 气体放电室的第一窗口（2）和第二窗口（3）具有与其氟化钙晶体的（111）晶面平行的入射面和发射平面。 关于进入氟化钙晶体的激光通过包括第一窗口（2）和第二窗口（3）中的每一个的<111>轴和<001>轴的平面的布置，从内侧看 室（1），第一窗口（2）和第二窗口（3）被布置在围绕其<111>轴线沿相同方向旋转相同角度的位置。

    Laser processing system and laser processing method
    17.
    发明授权
    Laser processing system and laser processing method 有权

    公开(公告)号：US10710194B2

    公开(公告)日：2020-07-14

    申请号：US16429091

    申请日：2019-06-03

    Applicant: Gigaphoton Inc.

    Inventor： Kouji Kakizaki ,  Osamu Wakabayashi

    IPC: B23K26/0622 ,  G02B21/36 ,  H01S3/094 ,  H03K7/08 ,  B23K26/08 ,  B23K26/53 ,  B23K26/03 ,  H01M2/14 ,  B23K26/042 ,  B23K26/32 ,  B23K26/40 ,  H01M8/1069 ,  H01J37/244 ,  H01J37/285 ,  H01J37/04 ,  H01J49/00

    Abstract: A laser processing system includes a wavelength tunable laser apparatus capable of changing the wavelength of pulsed laser light to be outputted, an optical system irradiating a workpiece with the pulsed laser light, a reference wavelength acquisition section acquiring a reference wavelength corresponding to photon absorption according to the material of the workpiece, a laser processing controller controlling the wavelength tunable laser apparatus to perform preprocessing before final processing performed on the workpiece, changes the wavelength of the pulsed laser light over a predetermined range containing the reference wavelength, and performs wavelength search preprocessing at a plurality of wavelengths, a processed state measurer measuring a processed state on a wavelength basis achieved by the wavelength search preprocessing performed at the plurality of wavelengths, and an optimum wavelength determination section assessing the processed state on a wavelength basis to determine an optimum wavelength used in the final processing.

    Excimer laser apparatus and excimer laser system
    19.
    发明授权
    Excimer laser apparatus and excimer laser system 有权

    公开(公告)号：US10177520B2

    公开(公告)日：2019-01-08

    申请号：US15792111

    申请日：2017-10-24

    Applicant: Gigaphoton Inc.

    Inventor： Takeshi Asayama ,  Osamu Wakabayashi ,  Kouji Kakizaki

    IPC: H01S3/036 ,  H01S3/134 ,  H01S3/225 ,  H01S3/038

    Abstract: The excimer laser apparatus may include a laser chamber configured to contain gas, a pair of electrodes provided in the laser chamber, a power source unit configured to supply a pulse voltage between the pair of electrodes, a gas supply unit configured to supply gas into the laser chamber, a gas exhaust unit configured to partially exhaust gas from within the laser chamber, and a gas control unit configured to control the gas supply unit and the gas exhaust unit, where a replacement ratio of gas to be replaced from within the laser chamber increases as deterioration of the pair of electrodes progresses, the deterioration being represented by a deterioration parameter of the pair of electrodes.

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