Analog error detection and correction in analog in-memory crossbars

    公开(公告)号:US11804859B2

    公开(公告)日:2023-10-31

    申请号:US17580146

    申请日:2022-01-20

    Abstract: An analog error correction circuit is disclosed that implements an analog error correction code. The analog circuit includes a crossbar array of memristors or other non-volatile tunable resistive memory devices. The crossbar array includes a first crossbar array portion programmed with values of a target computation matrix and a second crossbar array portion programmed with values of an encoder matrix for correcting computation errors in the matrix multiplication of an input vector with the computation matrix. The first and second crossbar array portions share the same row lines and are connected to a third crossbar array portion that is programmed with values of a decoder matrix, thereby enabling single-cycle error detection. A computation error is detected based on output of the decoder matrix circuitry and a location of the error is determined via an inverse matrix multiplication operation whereby the decoder matrix output is fed back to the decoder matrix.

    Wavelength division multiplexing (WDM)-based and multipath interferometry based optical ternary content addressable memory (TCAM)

    公开(公告)号:US11057143B1

    公开(公告)日:2021-07-06

    申请号:US16905674

    申请日:2020-06-18

    Abstract: Systems and methods for an optical ternary content addressable memory (TCAM) is provided. In various embodiments, one or more search words can be encoded in a multi-wavelength input signal. Each bit position associated with a set of wavelengths of the input signal, each wavelength corresponding to a logic value. A plurality of copies of the input signal can be coupled to an optical search engine comprising a plurality of rows of stored words. In various embodiments, the search word may be encoded in the amplitude of a single wavelength. Each bit position can be associated with a set input waveguides, and a logic value can be encoded based on whether amplitude of the associated wavelength is detected on a respective input waveguide of the set of waveguides. A mismatch of at least one bit is indicated if light is detected on an output of the optical TCAM.

    Adjustable Precision for Multi-Stage Compute Processes

    公开(公告)号:US20200042287A1

    公开(公告)日:2020-02-06

    申请号:US16052218

    申请日:2018-08-01

    Abstract: Disclosed techniques provide for dynamically changing precision of a multi-stage compute process. For example, changing neural network (NN) parameters on a per-layer basis depending on properties of incoming data streams and per-layer performance of an NN among other considerations. NNs include multiple layers that may each be calculated with a different degree of accuracy and therefore, compute resource overhead (e.g., memory, processor resources, etc.). NNs are usually trained with 32-bit or 16-bit floating-point numbers. Once trained, an NN may be deployed in production. One approach to reduce compute overhead is to reduce parameter precision of NNs to 16 or 8 for deployment. The conversion to an acceptable lower precision is usually determined manually before deployment and precision levels are fixed while deployed. Disclosed techniques and implementations address automatic rather than manual determination or precision levels for different stages and dynamically adjusting precision for each stage at run-time.

    Hash computation using memristor-implemented dot product engine

    公开(公告)号:US10419346B1

    公开(公告)日:2019-09-17

    申请号:US15966719

    申请日:2018-04-30

    Abstract: An input string is mapped to a vector of input voltages. The vector is applied to input rows of a dot product engine having memristor elements at intersections of the input rows and output columns. A hash of the input string is determined based on output of the dot product engine as to which the vector of input voltages have been applied to the input rows thereof. An output column may be selected from output voltages of the columns, and the hash determined from the selected column. The output voltage of a column is equal to a sum of a product of the input voltage in each input row and a value of the memristor element at the intersection of the input row and the column. The hash can be used within a filtering technique applied to the input string, such as in the context of network security.

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