公开(公告)号：US20240361683A1

公开(公告)日：2024-10-31

申请号：US18560659

申请日：2022-03-31

Applicant: HOYA CORPORATION

Inventor： Hiroaki SHISHIDO ,  Keishi AKIYAMA ,  Yasutaka HORIGOME

IPC: G03F1/32

CPC classification number: G03F1/32

Abstract: Provided is a mask blank comprising a phase shift film A mask blank comprises a phase shift film on a transparent substrate. The phase shift film is made of a material comprising a transition metal, silicon, and nitrogen. A ratio of the total content of nitrogen and oxygen to the content of the transition metal is 12 or more and 19 or less in an internal region, wherein the internal region excludes a neighboring region of the phase shift film at an interface with the transparent substrate and a surface layer region of the phase shift film which is located opposite the transparent substrate.

公开(公告)号：US20230367196A1

公开(公告)日：2023-11-16

申请号：US18226165

申请日：2023-07-25

Applicant: HOYA CORPORATION

Inventor： Osamu NOZAWA ,  Ryo OHKUBO ,  Hiroaki SHISHIDO

IPC: G03F1/24 ,  H01L21/033

CPC classification number: G03F1/24 ,  H01L21/0332 ,  H01L21/0337

Abstract: A light shielding film made up of a material containing one or more elements selected from silicon and tantalum and a hard mask film made up of a material containing chromium, oxygen, and carbon are laminated on a transparent substrate. The hard mask film is a single layer film having a composition gradient portion with increased oxygen content on the surface and on the neighboring region. The maximum peak for N1s in a narrow spectrum obtained via X-ray photoelectron spectroscopy analysis is the lower limit of detection or less. The portions excluding the composition gradient portion of the hard mask film have a 50 atom% or more chromium content, and the maximum peak for Cr2p in a narrow spectrum obtained via X-ray photoelectron spectroscopy analysis has a binding energy of 574 eV or less.

公开(公告)号：US20220163880A1

公开(公告)日：2022-05-26

申请号：US17668597

申请日：2022-02-10

Applicant: HOYA CORPORATION

Inventor： Osamu NOZAWA ,  Ryo OHKUBO ,  Hiroaki SHISHIDO

IPC: G03F1/24 ,  H01L21/033

Abstract: A light shielding film made up of a material containing one or more elements selected from silicon and tantalum and a hard mask film made up of a material containing chromium, oxygen, and carbon are laminated on a transparent substrate. The hard mask film is a single layer film having a composition gradient portion with increased oxygen content on the surface and on the neighboring region. The maximum peak for Nis in a narrow spectrum obtained via X-ray photoelectron spectroscopy analysis is the lower limit of detection or less. The portions excluding the composition gradient portion of the hard mask film have a 50 atom % or more chromium content, and the maximum peak for Cr2p in a narrow spectrum obtained via X-ray photoelectron spectroscopy analysis has a binding energy of 574 eV or less.

公开(公告)号：US20210208497A1

公开(公告)日：2021-07-08

申请号：US17058631

申请日：2019-05-08

Applicant: HOYA CORPORATION

Inventor： Hitoshi MAEDA ,  Hiroaki SHISHIDO ,  Masahiro HASHIMOTO

IPC: G03F1/26 ,  H01L21/033

Abstract: Provided is a mask blank, including a phase shift film. The phase shift film has a structure where a first layer and a second layer are stacked in this order from a side of the transparent substrate. The first layer is provided in contact with a surface of the transparent substrate. Refractive indexes n1 and n2 of the first layer and the second layer, respectively, at a wavelength of an exposure light of an ArF excimer laser satisfy the relation n1

公开(公告)号：US20210149294A1

公开(公告)日：2021-05-20

申请号：US17128499

申请日：2020-12-21

Applicant: HOYA CORPORATION

Inventor： Osamu NOZAWA ,  Ryo OHKUBO ,  Hiroaki SHISHIDO

IPC: G03F1/32 ,  G03F1/26 ,  G03F1/38 ,  H01L21/033 ,  G03F1/80 ,  G03F7/20 ,  G03F1/54

Abstract: Provided is a mask blank (100) for manufacturing a phase shift mask, the mask blank enabling formation of a high-precision and fine pattern on a light shielding film.
The mask blank (100) in which a phase shift film (2) made of a material containing silicon, a light shielding film (3) made of a material containing chromium, oxygen, and carbon, and a hard mask film (4) made of a material containing one or more elements selected from silicon and tantalum are provided in this order on a transparent substrate (1) is characterized in that the light shielding film (3) is a single layer film having a composition gradient portion with an increased oxygen content at a surface on the hard mask film (4) side and in a region close thereto, the light shielding film (3) has a maximum peak of N1s narrow spectrum obtained by analysis of X-ray photoelectron spectroscopy of lower detection limit or less, and a part of the light shielding film (3) excluding the composition gradient portion has a chromium content of 50 atom % or more and has a maximum peak of Cr2p narrow spectrum obtained by analysis of X-ray photoelectron spectroscopy at binding energy of 574 eV or less.

公开(公告)号：US20210132488A1

公开(公告)日：2021-05-06

申请号：US17058591

申请日：2019-05-08

Applicant: HOYA CORPORATION

Inventor： Hiroaki SHISHIDO ,  Hitoshi MAEDA ,  Masahiro HASHIMOTO

IPC: G03F1/32 ,  H01L21/027

Abstract: Provided is a mask blank including a phase shift film The phase shift film has a structure where a first layer, a second layer, and a third layer are stacked in this order from a side of the transparent substrate. Refractive indexes n1, n2, and n3 of the first layer, the second layer, and the third layer, respectively, at a wavelength of an exposure light of an ArF excimer laser satisfy the relations n1>n2 and n2 k3. Film thicknesses d1, d2, and d3 of the first layer, the second layer, and the third layer, respectively, satisfy the relations d1

公开(公告)号：US20200064726A1

公开(公告)日：2020-02-27

申请号：US15754927

申请日：2016-06-20

Applicant: HOYA CORPORATION

Inventor： Osamu NOZAWA ,  Hiroaki SHISHIDO

IPC: G03F1/26 ,  G03F1/48 ,  G03F1/80 ,  H01L21/027

Abstract: Provided is a mask blank for a phase shift mask having an etching stopper film, which satisfies the characteristics: higher durability to dry etching with fluorine-based gas that is used during the shift pattern formation as compared to that of a transparent substrate; high resistance to chemical cleaning; and high transmittance of exposure light.The mask blank includes a light shielding film on a main surface of a transparent substrate, having a structure where an etching stopper film, a phase shift film, and a light shielding film are laminated in this order on the transparent substrate; wherein the phase shift film includes a material containing silicon and oxygen; and the etching stopper film includes a material containing silicon, aluminum, and oxygen.

公开(公告)号：US20190204728A1

公开(公告)日：2019-07-04

申请号：US16327172

申请日：2017-08-02

Applicant: HOYA CORPORATION

Inventor： Hiroaki SHISHIDO

IPC: G03F1/26 ,  G03F7/20

CPC classification number: G03F1/26 ,  G03F1/50 ,  G03F1/54 ,  G03F7/20

Abstract: A mask blank including a light shielding film pattern having high ArF light fastness.The light shielding film is on a transparent substrate. In the mask blank, the light shielding film is a single layer film formed of a material containing silicon and nitrogen, and the light shielding film has an optical density to an ArF excimer laser exposure light of 2.5 or more, a surface reflectance to the exposure light of 40% or less, a back-surface reflectance to the exposure light of 40% or less, a transmittance to a light having a wavelength of 900 nm of 50% or less, an extinction coefficient to a light having a wavelength of 900 nm of 0.04 or more, and a thickness of 60 nm or less.

公开(公告)号：US20190163047A1

公开(公告)日：2019-05-30

申请号：US16318216

申请日：2017-06-22

Applicant: HOYA CORPORATION

Inventor： Takenori KAJIWARA ,  Ryo OHKUBO ,  Hiroaki SHISHIDO ,  Osamu NOZAWA

IPC: G03F1/32 ,  G03F1/80 ,  G03F1/74 ,  H01L21/033

Abstract: A mask blank having fast repair rate of EB defect repair and high repair rate ratio to EB defect repair relative to a transparent substrate that includes a phase shift film on a transparent substrate, the phase shift film has a structure including three sets or more of a set of a stacked structure including a high transmitting layer and a low transmitting layer, the high transmitting layer and the low transmitting layer are made of a material consisting of silicon and nitrogen, or a material consisting of silicon, nitrogen, oxygen, and one or more elements selected from a metalloid element and a non-metallic element, the high transmitting layer includes 50 atom % or more nitrogen content and has a thickness of 12 nm or less, and the low transmitting layer includes less than 50 atom % nitrogen content and has a thickness less than the high transmitting layer.

公开(公告)号：US20190146327A1

公开(公告)日：2019-05-16

申请号：US16201344

申请日：2018-11-27

Applicant: HOYA CORPORATION

Inventor： Osamu NOZAWA ,  Hiroaki SHISHIDO ,  Kazuya SAKAI

IPC: G03F1/32 ,  H01L21/027 ,  G03F1/26 ,  G03F7/20

Abstract: Provided is a mask blank in which uniformity of the composition and optical characteristics of a phase-shift film in the in-plane direction and direction of film thickness is high, uniformity of the composition and optical characteristics of the phase-shift film between a plurality of substrates is also high, and defectivity is low even if a silicon-based material is applied to the material that forms the phase-shift film.A mask blank is provided in which a phase-shift film is provided on a transparent substrate, the phase-shift film having a function to transmit ArF exposure light therethrough at a predetermined transmittance and generate a predetermined amount of phase shift in the ArF exposure light that is transmitted therethrough, wherein the phase-shift film comprises a structure in which a low transmission layer and a high transmission layer are laminated, the low transmission layer and the high transmission layer are formed from a material consisting of silicon and nitrogen or a material consisting of silicon, nitrogen and one or more elements selected from semi-metallic elements, non-metallic elements and noble gases, and the low transmission layer has a relatively low nitrogen content in comparison with the high transmission layer.