Abstract:
This invention concerns a capacitive pressure sensor construction and method for fabricating said sensor. The pressure sensor construction comprises a base part (1, 2, 4), comprising an electrically conductive silicon layer (1, 2) and a thereupon permanently bonded planar intermediate layer (4) of an insulating material with an essentially smaller thickness than that of the silicon layer (1, 2); a fixed planar capacitor electrode (9) fabricated on the base part (1, 2, 4); and a deflecting membranous capacitor electrode (6) fabricated of silicon and integral with a surrounding, essentially thicker base element (5), and gappedly spaced from and aligned at least approximately coincident with the fixed capacitor electrode (9), so that a hermetically sealed chamber (25) remains between the fixed electrode (9) and the membranous electrode (6). According to the invention, the base part (1, 2, 4) is perpendicularly divided into areas (1, 2) galvanically isolated from each other, namely to a contact area (2), which is coincident with the fixed capacitor electrode (9), galvanically connected to said electrode and designed with an area maximally equal to that of said electrode, and to at least one bonding area (1), which is isolated from the contact area (2) by an insulating layer (3) and to which a bonding voltage can be applied during the anodic bonding process in order to bond the base part to the base element (5) of the membranous capacitor electrode. The construction avoids stray capacitances at bonding area.
Abstract:
A capacitive pressure transducer includes a capacitive sensor structure, a case into which the capacitive sensor structure is adapted, channels formed in the case for introducing a measured medium into the capacitive sensor structure, and electrical conductors to make the pressure-related capacitive sensor information externally available. According to the invention, the capacitive sensor structure is fixed to the case by means of elastic structures, which elastic structures provide a floating support for the capacitive sensor structure adapted between the elastic structures. The construction in accordance with the invention cancels errors caused by temperature variations.
Abstract:
A method of making a system-in-package device, and a system-in-package device is disclosed. In the method, at least one first species die with predetermined dimensions, at least one second species die with predetermined dimensions, and at least one further component of the system-in-device is included in the system-in package device. At least one of the first and second species dies is selected for redimensioning, and material is added to at least one side of the selected die such that the added material and the selected die form a redimensioned die structure. A connecting layer is formed on the redimensioned die structure. The redimensioned die structure is dimensioned to allow mounting of the non-selected die and the at least one further component into contact with the redimensioned die structure via the connecting layer.
Abstract:
The invention embodies a harvester (12) to convert energy from mechanical domain to electrical domain. The harvester comprises at least one inertial body (6), at least one beam (7, 9), a support (8) to said at least one beam (7, 9) and transducer means (10, 16), wherein said at least one beam (7, 9) configures the inertial body (6) into a pendulum structure being suspended from said support (8) so that the beam (7, 9) is allowed to bend according to the kinetic state changes of the inertial body (6), and is configured to interact with at least one transducer means (10) that is/are configured to produce change in the electrical state of said transducer means (10, 16) responsively to the kinetic state of the beam (7, 9). The invention also shows harvester module, matrix and a harvester system comprising at least one embodied harvester. The invention also shows a tire and a foot wear that comprises at least one harvester embodied.
Abstract:
A method for producing an encapsulation module and/or for encapsulating a micromechanical arrangement, wherein electronic connection provisions are formed from a blank of electrically conductive semiconductor material, by one or more structuring processes and/or etching processes, wherein, in the course of forming the electronic connection provisions, a pedestal of the semiconductor material arises, on which the electronic connection provisions are arranged, wherein the latter are subsequently embedded with an embedding material and the embedding material and/or the semiconductor pedestal are removed after the embedding to an extent such that a defined number of the electronic connection provisions have electrical contacts on at least one of the outer surfaces of the encapsulation module thus produced, wherein upon forming the electronic connection provisions, on the pedestal of the semiconductor material, an insular material hump is formed, on which a plated-through hole is arranged in each case, and which embodies a semiconductor electrode.
Abstract:
The invention relates to microelectromechanical components, like microelectromechanical gauges used in measuring e.g. acceleration, angular acceleration, angular velocity, or other physical quantities. The microelectromechanical component, according to the invention, comprises, suitably bonded to each other, a microelectromechanical chip part sealed by a cover part, and at least one electronic circuit part. The aim of the invention is to provide an improved method of manufacturing a microelectromechanical component, and to provide a microelectromechanical component, which is applicable for use particularly in small microelectromechanical sensor solutions.
Abstract:
A method for producing an encapsulation module and/or for encapsulating a micromechanical arrangement, wherein electronic connection provisions are formed from a blank of electrically conductive semiconductor material, by one or more structuring processes and/or etching processes, wherein, in the course of forming the electronic connection provisions, a pedestal of the semiconductor material arises, on which the electronic connection provisions are arranged, wherein the latter are subsequently embedded with an embedding material and the embedding material and/or the semiconductor pedestal are removed after the embedding to an extent such that a defined number of the electronic connection provisions have electrical contacts on at least one of the outer surfaces of the encapsulation module thus produced, whereinupon forming the electronic connection provisions, on the pedestal of the semiconductor material, an insular material hump is formed, on which a plated-through hole is arranged in each case, and which embodies a semiconductor electrode.
Abstract:
The present invention relates to measuring devices used in measuring acceleration and, more precisely, to capacitive acceleration sensors. The object of the invention is to provide an improved method of manufacturing a capacitive acceleration sensor, and to provide a capacitive acceleration sensor, which is applicable for use in small capacitive acceleration sensor solutions, and which, in particular, is applicable for use in small and extremely thin capacitive acceleration sensor solutions measuring acceleration in relation to several axes.
Abstract:
Described herein is a capacitive absolute pressure transducer including a flat base plate (9) of insulating material, e.g., of glass, with a fixed capacitor electrode (10), aligned on the base plate. A silicon-material moving diaphragm electrode (5) of the capacitor is at least partly aligned with the fixed electrode (10), properly spaced to implement a hermetically sealed vacuum chamber (7) between the fixed electrode (10) and moving diaphragm electrode (5). Electrical contacts (12) are attached to the fixed electrode (10) and the moving diaphragm electrode (5). According to the invention, the flat base plate (9) is bonded to an electrically conductive wafer (8) to implement a laminated substrate (2), the diaphragm electrode (5) fabricated integral with a surrounding and essentially thicker collar part (18), and the electrical contact to the fixed capacitor plate (10) in the area of the vacuum chamber (7) is a well (11, 12) extending through the base plate (9) to the wafer (8).
Abstract:
A device (100) harvests energy from vibration and/or strain and utilizes both capacitive (102a, 102b) and piezoelectric elements (105). The principle of operation is out-of-plane capacitive harvester, where the bias voltage for the capacitive element is generated with a piezoelectric element (105). The device utilizes a thin dielectric film (104) between the capacitor plates (102a, 102b) maximizing the harvested energy and enabling the harvester operation in semi-contact mode so that short circuits are prevented. For example when utilized in a wheel or the like, the capacitor is closed and opened at every strike or every turn of a wheel being thus independent of the harvester's mechanical resonance frequency.