公开(公告)号：US08873151B2

公开(公告)日：2014-10-28

申请号：US11911904

申请日：2006-04-26

Applicant: Alexander Sohmer ,  Aurelian Dodoc ,  Heiko Feldmann ,  Wilhelm Ulrich ,  Gerhard Fuerter ,  Rafael Egger ,  Artur Moegele ,  Michael Raum

Inventor： Alexander Sohmer ,  Aurelian Dodoc ,  Heiko Feldmann ,  Wilhelm Ulrich ,  Gerhard Fuerter ,  Rafael Egger ,  Artur Moegele ,  Michael Raum

IPC: G02B3/00 ,  G03F7/20 ,  G02B17/08 ,  G02B27/00

CPC classification number: G03F7/70075 ,  G02B17/0892 ,  G02B27/0043

Abstract: An illumination system of a microlithographic exposure apparatus comprises a condenser for transforming a pupil plane into a field plane. The condenser has a lens group that contains a plurality of consecutive lenses. These lenses are arranged such that a light bundle focused by the condenser on an on-axis field point converges within each lens of the lens group. At least one lens of the lens group has a concave surface. The illumination system may further comprise a field stop objective that at least partly corrects a residual pupil aberration of the condenser.

Abstract translation: 微光刻曝光设备的照明系统包括用于将光瞳平面转换成场平面的聚光器。 冷凝器具有包含多个连续透镜的透镜组。 这些透镜被布置成使得由聚光器聚焦在轴上场点上的光束在透镜组的每个透镜内会聚。 透镜组的至少一个透镜具有凹面。 照明系统还可以包括至少部分地校正冷凝器的残余光瞳像差的场停止物镜。

公开(公告)号：US20130250265A1

公开(公告)日：2013-09-26

申请号：US13782390

申请日：2013-03-01

Applicant: Marc Bienert ,  Heiko Feldmann ,  Aksel Goehnermeier ,  Oliver Natt ,  Johannes Ruoff

Inventor： Marc Bienert ,  Heiko Feldmann ,  Aksel Goehnermeier ,  Oliver Natt ,  Johannes Ruoff

IPC: G03F7/20

CPC classification number: G03F7/70091 ,  G03F7/701 ,  G03F7/70425

Abstract: The disclosure relates to a projection exposure apparatus for EUV microlithography which includes an illumination system for illuminating a pattern, and a projection objective for imaging the pattern onto a light-sensitive substrate. The projection objective has a pupil plane with an obscuration. The illumination system generates light with an angular distribution having an illumination pole which extends over a range of polar angles and a range of azimuth angles and within which the light intensity is greater than an illumination pole minimum value. From the illumination pole toward large polar angles a dark zone is excluded within which the light intensity is less than the illumination pole minimum value, and which has in regions a form corresponding to the form of the obscuration of the pupil plane.

Abstract translation: 本发明涉及一种用于EUV微光刻的投影曝光装置，其包括用于照亮图案的照明系统和用于将图案成像到感光基板上的投影物镜。 投影物镜具有晦暗的瞳孔平面。 照明系统产生具有角度分布的光，其具有在极角范围和方位角范围内延伸的照明极，并且光强度大于照明极点最小值。 从照明极到大的极角，不包括光强度小于照明极最小值的暗区，并且在区域中具有对应于瞳孔平面遮蔽形式的形式。

公开(公告)号：USRE44216E1

公开(公告)日：2013-05-14

申请号：US12604821

申请日：2009-10-23

Applicant: Michael Totzeck ,  Heiko Feldmann ,  Toralf Gruner ,  Karl-Heinz Schuster ,  Joern Greif-Wuestenbecker ,  Thomas Scheruebl ,  Wolfgang Harnisch ,  Norbert Rosenkranz ,  Ulrich Matejka

Inventor： Michael Totzeck ,  Heiko Feldmann ,  Toralf Gruner ,  Karl-Heinz Schuster ,  Joern Greif-Wuestenbecker ,  Thomas Scheruebl ,  Wolfgang Harnisch ,  Norbert Rosenkranz ,  Ulrich Matejka

IPC: G02B23/00

CPC classification number: G03F7/70566 ,  G02B5/3025 ,  G02B21/0016 ,  G03F7/70666 ,  Y10S359/90

Abstract: An optical imaging system for inspection microscopes with which lithography masks can be checked for defects particularly through emulation of high-aperture scanner systems. The microscope imaging system for emulating high-aperture imaging systems comprises imaging optics, a detector and an evaluating unit, wherein polarizing optical elements are selectively arranged in the illumination beam path for generating different polarization states of the illumination beam and/or in the imaging beam path for selecting different polarization components of the imaging beam, an optical element with a polarization-dependent intensity attenuation function can be introduced into the imaging beam path, images of the mask and/or sample are received by the detector for differently polarized beam components and are conveyed to the evaluating unit for further processing.

Abstract translation: 用于检查显微镜的光学成像系统，通过该光学成像系统可以通过光学掩模来检查缺陷，特别是通过高光阑扫描器系统的仿真。 用于模拟高光圈成像系统的显微镜成像系统包括成像光学器件，检测器和评估单元，其中偏振光学元件选择性地布置在照明光束路径中，用于产生照明光束和/或成像光束的不同偏振状态 用于选择成像光束的不同偏振分量的路径，具有偏振相关强度衰减功能的光学元件可以被引入到成像光束路径中，掩模和/或采样的图像被检测器接收用于不同偏振光束分量， 被传送到评估单元进行进一步处理。

公开(公告)号：US08436982B2

公开(公告)日：2013-05-07

申请号：US12723496

申请日：2010-03-12

Applicant: Helmut Beierl ,  Heiko Feldmann ,  Jochen Hetzler ,  Michael Totzeck

Inventor： Helmut Beierl ,  Heiko Feldmann ,  Jochen Hetzler ,  Michael Totzeck

IPC: G03B27/54 ,  G03B27/52 ,  G03B27/42

CPC classification number: G03F7/70341 ,  G02B1/02 ,  G02B21/33 ,  G03F7/70941

Abstract: A projection objective for microlithography includes at least one optical assembly with optical elements which are disposed between an object plane and an image plane. The optical assembly includes at least one optical terminal element, which is disposed close to the image plane. A first immersion liquid is disposed on the image oriented surface of the optical terminal element. A second immersion liquid is disposed on the object oriented surface of the optical terminal element. The object oriented surface includes a first surface section for the imaging light to enter into the terminal element, and the image oriented surface includes a second surface portion for the imaging light to exit from the terminal element.

Abstract translation: 用于微光刻的投影物镜包括至少一个具有设置在物平面和像平面之间的光学元件的光学组件。 光学组件包括靠近图像平面设置的至少一个光学终端元件。 第一浸没液体设置在光学终端元件的图像取向表面上。 第二浸没液体设置在光学终端元件的物体取向表面上。 面向对象的表面包括用于成像光进入端子元件的第一表面部分，并且图像取向表面包括用于成像光从终端元件退出的第二表面部分。

公开(公告)号：US08294991B2

公开(公告)日：2012-10-23

申请号：US12687299

申请日：2010-01-14

Applicant: Ralf Mueller ,  Toralf Gruner ,  Michael Totzeck ,  Heiko Feldmann ,  Hans-Jochen Paul

Inventor： Ralf Mueller ,  Toralf Gruner ,  Michael Totzeck ,  Heiko Feldmann ,  Hans-Jochen Paul

IPC: G02B27/00

CPC classification number: G03F7/70308 ,  G02B5/205 ,  G02B5/283 ,  G02B26/001 ,  G02B26/0825 ,  G03F7/70191 ,  G03F7/70266 ,  G03F7/70566

Abstract: An optical system of a microlithographic projection exposure apparatus permits comparatively flexible and fast influencing of the intensity distribution and/or the polarization state. The optical system includes at least one layer system that is at least one-side bounded by a lens or a mirror. The layer system is an interference layer system of several layers and has at least one liquid or gaseous layer portion with a maximum thickness of one micrometer (μm), and a manipulator for manipulation of the thickness profile of the layer portion.

Abstract translation: 微光刻投影曝光装置的光学系统允许强度分布和/或偏振状态的相对灵活和快速的影响。 光学系统包括至少一个由透镜或反射镜限定的一个层系统。 层系统是几层的干涉层系统，并且具有至少一个最大厚度为1微米（μm）的液体或气体层部分，以及用于操纵层部分的厚度分布的操纵器。

公开(公告)号：US08211627B2

公开(公告)日：2012-07-03

申请号：US12345960

申请日：2008-12-30

Applicant: Heiko Feldmann

Inventor： Heiko Feldmann

IPC: G03F7/20 ,  G02B26/08

CPC classification number: G03F7/70291 ,  G02B26/085 ,  G03F7/70341 ,  G03F7/70416

Abstract: A method and to an apparatus for structuring a radiation-sensitive material are disclosed. The method can include using a dynamic mask to generate a first radiation pattern in a layer of the radiation-sensitive material, where the first radiation pattern has a thickness that is at most 50% of the thickness of the layer of the radiation-sensitive material. The method can also include using the dynamic mask to generate a second radiation pattern in the layer of the radiation-sensitive material. The dynamic mask can be configured to change its structure dynamically, and the first radiation pattern can be different from the second radiation pattern.

Abstract translation: 公开了一种用于结构化辐射敏感材料的方法和装置。 该方法可以包括使用动态掩模在辐射敏感材料的层中产生第一辐射图案，其中第一辐射图案的厚度为辐射敏感材料层的厚度的至多50％ 。 该方法还可以包括使用动态掩模在辐射敏感材料的层中产生第二辐射图。 动态掩模可以被配置为动态地改变其结构，并且第一辐射图可以不同于第二辐射图。

公开(公告)号：US20120092637A1

公开(公告)日：2012-04-19

申请号：US13333350

申请日：2011-12-21

Applicant: Michael Totzeck ,  Aksel Goehnermeier ,  Wolfgang Singer ,  Helmut Beierl ,  Heiko Feldmann ,  Hans-Juergen Mann ,  Jochen Hetzler

Inventor： Michael Totzeck ,  Aksel Goehnermeier ,  Wolfgang Singer ,  Helmut Beierl ,  Heiko Feldmann ,  Hans-Juergen Mann ,  Jochen Hetzler

IPC: G03B27/54

CPC classification number: G03F7/70308 ,  G03F7/70216 ,  G03F7/70566

Abstract: The disclosure relates to a microlithographic projection exposure apparatus and a microlithographic projection exposure apparatus, as well as related components, methods and articles made by the methods. The microlithographic projection exposure apparatus includes an illumination system and a projection objective. The illumination system can illuminate a mask arranged in an object plane of the projection objective. The mask can have structures which are to be imaged. The method can include illuminating a pupil plane of the illumination system with light. The method can also include modifying, in a plane of the projection objective, the phase, amplitude and/or polarization of the light passing through that plane. The modification can be effected for at least two diffraction orders in mutually different ways. A mask-induced loss in image contrast obtained in the imaging of the structures can be reduced compared to a method without the modification.

Abstract translation: 本发明涉及微光刻投影曝光装置和微光刻投影曝光装置，以及通过该方法制造的相关部件，方法和制品。 微光刻投影曝光装置包括照明系统和投影物镜。 照明系统可以照亮布置在投影物镜的物平面中的掩模。 掩模可以具有待成像的结构。 该方法可以包括用光照射照明系统的光瞳平面。 该方法还可以包括在投影物镜的平面内修改通过该平面的光的相位，幅度和/或极化。 可以以相互不同的方式对至少两个衍射级进行修改。 与没有修改的方法相比，在结构成像中获得的掩模诱导的图像对比损失可以减少。

公开(公告)号：US08107054B2

公开(公告)日：2012-01-31

申请号：US12210514

申请日：2008-09-15

Applicant: Michael Totzeck ,  Aksel Goehnermeier ,  Wolfgang Singer ,  Helmut Beierl ,  Heiko Feldmann ,  Hans-Juergen Mann ,  Jochen Hetzler

Inventor： Michael Totzeck ,  Aksel Goehnermeier ,  Wolfgang Singer ,  Helmut Beierl ,  Heiko Feldmann ,  Hans-Juergen Mann ,  Jochen Hetzler

IPC: G03B27/72 ,  G03B27/68 ,  G03B27/42 ,  G03B27/52 ,  G03B27/54 ,  G03B27/32

CPC classification number: G03F7/70308 ,  G03F7/70216 ,  G03F7/70566

Abstract: The disclosure relates to a microlithographic projection exposure apparatus and a microlithographic projection exposure apparatus, as well as related components, methods and articles made by the methods. The microlithographic projection exposure apparatus includes an illumination system and a projection objective. The illumination system can illuminate a mask arranged in an object plane of the projection objective. The mask can have structures which are to be imaged. The method can include illuminating a pupil plane of the illumination system with light. The method can also include modifying, in a plane of the projection objective, the phase, amplitude and/or polarization of the light passing through that plane. The modification can be effected for at least two diffraction orders in mutually different ways. A mask-induced loss in image contrast obtained in the imaging of the structures can be reduced compared to a method without the modification.

Abstract translation: 本发明涉及微光刻投影曝光装置和微光刻投影曝光装置，以及通过该方法制造的相关部件，方法和制品。 微光刻投影曝光装置包括照明系统和投影物镜。 照明系统可以照亮布置在投影物镜的物平面中的掩模。 掩模可以具有待成像的结构。 该方法可以包括用光照射照明系统的光瞳平面。 该方法还可以包括在投影物镜的平面内修改通过该平面的光的相位，幅度和/或极化。 可以以相互不同的方式对至少两个衍射级进行修改。 与没有修改的方法相比，在结构成像中获得的掩模诱导的图像对比损失可以减少。

公开(公告)号：US07834981B2

公开(公告)日：2010-11-16

申请号：US11747630

申请日：2007-05-11

Applicant: Hans-Juergen Rostalski ,  Heiko Feldmann ,  Wilhelm Ulrich

Inventor： Hans-Juergen Rostalski ,  Heiko Feldmann ,  Wilhelm Ulrich

IPC: G03B27/54 ,  G03B27/42

CPC classification number: G03F7/70225 ,  G02B17/0892 ,  G03F7/70275

Abstract: A projection exposure apparatus for the exposure of a radiation-sensitive substrate arranged in the region of an image surface of a projection objective with at least one image of a pattern of a mask that is arranged in the region of an object surface of the projection objective has a light source for emitting ultraviolet light from a wavelength band having a bandwidth Δλ>10 pm around a central operating wavelength λ>200 nm; an illumination system for receiving the light from the light source and for directing illumination radiation onto the pattern of the mask; and a projection objective for the imaging of the structure of the mask onto a light-sensitive substrate. The projection objective is a catadioptric projection objective having at least one concave mirror arranged in a region of a pupil surface of the projection objective, and a negative group having at least one negative lens arranged in direct proximity to the concave mirror in a region near the pupil surface, where a marginal ray height (MRH) of the imaging is greater than a chief ray height (CRH).

Abstract translation: 一种投影曝光装置，用于曝光布置在投影物镜的图像表面的区域中的辐射敏感基板，其具有布置在投影物镜的物体表面的区域中的掩模图案的至少一个图像 具有用于从围绕中心工作波长λ> 200nm的带宽＆Dgr;λ>10μm的波长带发射紫外光的光源; 照明系统，用于接收来自光源的光并将照射辐射引导到掩模的图案上; 以及用于将掩模的结构成像到感光基板上的投影物镜。 投影物镜是一个反射折射投影物镜，它具有至少一个凹面镜，该凹面镜布置在投影物镜的光瞳表面的区域中，以及一个负极组，具有至少一个负透镜， 瞳孔表面，其中成像的边缘射线高度（MRH）大于主射线高度（CRH）。

公开(公告)号：US07728975B1

公开(公告)日：2010-06-01

申请号：US11358119

申请日：2006-02-22

Applicant: Michael Totzeck ,  Heiko Feldmann ,  Daniel Kraehmer ,  Olaf Dittmann

Inventor： Michael Totzeck ,  Heiko Feldmann ,  Daniel Kraehmer ,  Olaf Dittmann

IPC: G01J4/00

CPC classification number: G01J4/04 ,  G03F7/70508 ,  G03F7/70566 ,  G03F7/706

Abstract: In a method for describing, evaluating and improving optical polarization properties of a projection objective of a microlithographic projection exposure apparatus, the Jones or Stokes vectors are firstly determined at one or more points in the exit pupil of the projection objective. These are then described at least approximately as a linear superposition of predetermined vector modes with scalar superposition coefficients. The optical polarization properties can subsequently be evaluated on the basis of the superposition coefficients.

Abstract translation: 在用于描述，评估和改进微光刻投影曝光装置的投影物镜的光学偏振特性的方法中，首先在投影物镜的出射光瞳的一个或多个点处确定琼斯或斯托克斯矢量。 然后将这些描述至少近似为具有标量叠加系数的预定向量模式的线性叠加。 随后可以基于叠加系数来评估光学偏振特性。