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11.发明申请公开(公告)号：US20230025358A1
公开(公告)日：2023-01-26
申请号：US17958088
申请日：2022-09-30
Applicant: HOYA CORPORATION
Inventor： Kazuhiro HAMAMOTO , Takashi UCHIDA
IPC: G03F1/24
Abstract: A reflective film coated substrate includes a substrate having two main surfaces opposite to each other and end faces connected to outer edges of the two main surfaces; and a reflective film formed on one of the main surfaces and extending onto at least part of the end faces. The reflective film on the main surface has a multilayer structure including low refractive index layers and high refractive index layers alternately formed. The reflective film which extends onto the end faces has a single-layer structure containing a first element higher in content than any other element in the low refractive index layers and a second element higher in content than any other element in the high refractive index layers.
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公开(公告)号：US20220308438A1
公开(公告)日：2022-09-29
申请号：US17683110
申请日：2022-02-28
Applicant: HOYA CORPORATION
Inventor： Kentaro IWAMOTO , Kazuhiro HAMAMOTO
Abstract: A method for manufacturing a multilayered-reflective-film-provided substrate including a substrate and a multilayer reflective film that reflects EUV light on the substrate, the method includes performing a first defect inspection on the multilayered-reflective-film-provided substrate with a first wavelength to acquire first defect information, performing a second defect inspection on the multilayered-reflective-film-provided substrate with a second wavelength different from the first wavelength to acquire second defect information, and determining whether there is an unmatching defect and a matching defect by comparing the first defect information with the second defect information to acquire third defect information.
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13.发明申请公开(公告)号：US20200249558A1
公开(公告)日：2020-08-06
申请号：US16756727
申请日：2018-10-16
Applicant: HOYA CORPORATION
Inventor： Kazuhiro HAMAMOTO , Tsutomu SHOKI
IPC: G03F1/24 , G03F1/86 , G03F1/58 , G03F1/42 , G03F1/80 , G03F1/60 , G03F1/74 , G03F7/20 , H01L21/027 , H01L21/033
Abstract: A substrate with a multilayer reflective film, a reflective mask blank, a reflective mask and a method of manufacturing a semiconductor device that can prevent contamination of the surface of the multilayer reflective film even in the case of having formed reference marks on the multilayer reflective film. A substrate with a multilayer reflective film contains a substrate and a multilayer reflective film that reflects EUV light formed on the substrate. Reference marks are formed to a concave shape on the surface of the substrate with the multilayer reflective film. The reference marks have grooves or protrusions roughly in the center. The shape of the grooves or protrusions when viewed from overhead is similar or roughly similar to the shape of the reference marks.
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公开(公告)号：US20180081264A1
公开(公告)日：2018-03-22
申请号：US15824227
申请日：2017-11-28
Applicant: HOYA CORPORATION
Inventor： Kazuhiro HAMAMOTO , Toshihiko ORIHARA , Hirofumi KOZAKAI , Youichi USUI , Tsutomu SHOKI , Junichi HORIKAWA
IPC: G03F1/22 , H01L21/033 , G03F1/50 , G03F1/60 , G03F7/20
Abstract: Disclosed is a mask blank substrate for use in lithography, wherein a main surface of the substrate satisfies a relational equation of (BA70−BA30)/(BD70−BD30)≧350 (%/nm), and has a maximum height (Rmax)≦1.2 nm in a relation between a bearing area (%) and a bearing depth (nm) obtained by measuring, with an atomic force microscope, an area of 1 μm×1 μm in the main surface on the side of the substrate where a transfer pattern is formed, wherein BA30 is defined as a bearing area of 30%, BA70 is defined as a bearing area of 70%, and BD70 and BD30 are defined to respectively represent bearing depths for the bearing area of 30% and the bearing area of 70%.
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15.发明申请REFLECTIVE MASK BLANK, METHOD OF MANUFACTURING SAME, REFLECTIVE MASK AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权反射掩模布，其制造方法，反射掩模和制造半导体器件的方法公开(公告)号：US20160238925A1
公开(公告)日：2016-08-18
申请号：US14787532
申请日：2014-08-29
Applicant: HOYA CORPORATION
Inventor： Kazuhiro HAMAMOTO , Tatsuo ASAKAWA , Tsutomu SHOKI
CPC classification number: G03F1/24 , G03F1/84 , G03F7/2004
Abstract: A reflective mask blank capable of facilitating the discovery of contaminants, scratches and other critical defects by inhibiting the detection of pseudo defects attributable to surface roughness of a substrate or film in a defect inspection using a highly sensitive defect inspection apparatus. The reflective mask blank has a mask blank multilayer film comprising a multilayer reflective film, obtained by alternately laminating a high refractive index layer and a low refractive index layer, and an absorber film on a main surface of a mask blank substrate, wherein, in the relationship between bearing area (%) and bearing depth (nm) as measured with an atomic force microscope for a 1 μm×1 μm region of the surface of the reflective mask blank on which the mask blank multilayer film is formed, the surface of the reflective mask blank satisfies the relationship of (BA70−BA30)/(BD70−BD30)≧60(%/nm) and maximum height (Rmax)≦4.5 nm.
Abstract translation: 一种能够通过使用高度敏感的缺陷检查装置在缺陷检查中抑制由于基材或膜的表面粗糙度引起的伪缺陷的检测来促进污染物，划痕和其它临界缺陷的发现的反射掩模板。 反射掩模板具有掩模坯料多层膜，其包括通过交替层叠高折射率层和低折射率层而获得的多层反射膜，以及在掩模坯料基板的主表面上的吸收膜，其中， 对于其上形成掩模坯料多层膜的反射掩模板的表面的1μm×1μm区域，用原子力显微镜测量的承载面积（％）和承载深度（nm）之间的关系， 反射掩模坯料满足（BA70-BA30）/（BD70-BD30）≥60（％/ nm）和最大高度（Rmax）≤4.5nm的关系。
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Patent Agency Ranking
16.发明申请REFLECTIVE MASK BLANK, METHOD OF MANUFACTURING REFLECTIVE MASK BLANK, REFLECTIVE MASK AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权反射掩模层，制造反射掩模层的方法，反射掩模和制造半导体器件的方法公开(公告)号：US20160161837A1
公开(公告)日：2016-06-09
申请号：US14787497
申请日：2014-08-29
Applicant: HOYA CORPORATION
Inventor： Kazuhiro HAMAMOTO , Tatsuo ASAKAWA , Tsutomu SHOKI
CPC classification number: G03F1/24 , G03F7/2004
Abstract: Provided is a reflective mask blank capable of facilitating the discovery of contaminants, scratches and other critical defects by inhibiting the detection of pseudo defects attributable to surface roughness of a substrate or film in a defect inspection using a highly sensitive defect inspection apparatus. The reflective mask blank has a mask blank multilayer film comprising a multilayer reflective film, obtained by alternately laminating a high refractive index layer and a low refractive index layer, and an absorber film on a main surface of a mask blank substrate, wherein the root mean square roughness (Rms), obtained by measuring a 3 μm×3 μm region on the surface of the reflective mask blank on which the mask blank multilayer film is formed with an atomic force microscope, is not more than 0.5 nm and the power spectrum density at a spatial frequency of 1 μm−1 to 10 μm−1 is not more than 50 nm4.
Abstract translation: 本发明提供一种能够通过使用高灵敏度的缺陷检查装置在缺陷检查中抑制由于基板或膜的表面粗糙度引起的伪缺陷的检测而有助于发现污染物，划痕和其它关键缺陷的反射掩模板。 反射掩模板具有掩模坯料多层膜，其包括通过交替层叠高折射率层和低折射率层而获得的多层反射膜，以及在掩模坯料基板的主表面上的吸收膜，其中根平均 通过用原子力显微镜测量其上形成掩模坯料多层膜的反射掩模坯料的表面上的3μm×3μm区域获得的平方粗糙度（Rms）不大于0.5nm，功率谱密度 在1μm〜10μm的空间频率处不大于50nm。
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17.发明公开公开(公告)号：US20240027891A1
公开(公告)日：2024-01-25
申请号：US18266057
申请日：2021-12-15
Applicant: HOYA CORPORATION
Inventor： Kazuhiro HAMAMOTO
Abstract: Provided is a reflective mask blank that makes it possible to form a transfer pattern having a fine pattern shape on a transferred substrate and that is used for manufacturing a reflective mask having a transfer pattern capable of performing EUV exposure with a high throughput.
A reflective mask blank comprises: a substrate; a multilayer reflective film on the substrate; and an absorber film on the multilayer reflective film. The absorber film comprises iridium (Ir) and an additive element. The additive element is at least one selected from boron (B), silicon (Si), phosphorus (P), titanium (Ti), germanium (Ge), arsenic (As), selenium (Se), niobium (Nb), molybdenum (Mo), ruthenium (Ru), and tantalum (Ta). The content of the iridium (Ir) in the absorber film is more than 50 atom %.-
18.发明公开公开(公告)号：US20230266658A1
公开(公告)日：2023-08-24
申请号：US18142223
申请日：2023-05-02
Applicant: HOYA CORPORATION
Inventor： Kazuhiro HAMAMOTO , Tsutomu SHOKI
CPC classification number: G03F1/24 , G03F1/42 , G03F7/2004
Abstract: A substrate with a multilayer reflective film, a reflective mask blank, a reflective mask and a method of manufacturing a semiconductor device that can prevent contamination of the surface of the multilayer reflective film even in the case of having formed reference marks on the multilayer reflective film. A substrate with a multilayer reflective film contains a substrate and a multilayer reflective film that reflects EUV light formed on the substrate. Reference marks are formed to a concave shape on the surface of the substrate with the multilayer reflective film. The reference marks have grooves or protrusions roughly in the center. The shape of the grooves or protrusions when viewed from overhead is similar or roughly similar to the shape of the reference marks.
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19.发明申请公开(公告)号：US20210063866A1
公开(公告)日：2021-03-04
申请号：US17008949
申请日：2020-09-01
Applicant: HOYA CORPORATION
Inventor： Kazuhiro HAMAMOTO , Takashi UCHIDA
Abstract: A reflective film coated substrate includes a substrate having two main surfaces opposite to each other and end faces connected to outer edges of the two main surfaces; and a reflective film formed on one of the main surfaces and extending onto at least part of the end faces. The reflective film on the main surface has a multilayer structure including low refractive index layers and high refractive index layers alternately formed. The reflective film which extends onto the end faces has a single-layer structure containing a first element higher in content than any other element in the low refractive index layers and a second element higher in content than any other element in the high refractive index layers.
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公开(公告)号：US20180275507A1
公开(公告)日：2018-09-27
申请号：US15980783
申请日：2018-05-16
Applicant: HOYA CORPORATION
Inventor： Toshihiko ORIHARA , Kazuhiro HAMAMOTO , Hirofumi KOZAKAI , Youichi USUI , Tsutomu SHOKI , Junichi HORIKAWA
IPC: G03F1/48 , H01L21/308 , G03F1/22 , G02B5/08 , G03F7/20 , B82Y10/00 , B82Y40/00 , G03F7/16 , C03C17/36 , C03C23/00 , C03C3/06 , C03C17/34
CPC classification number: G03F1/48 , B82Y10/00 , B82Y40/00 , C03C3/06 , C03C17/3435 , C03C17/3626 , C03C17/3636 , C03C17/3639 , C03C17/3649 , C03C17/3665 , C03C23/0075 , C03C2201/42 , C03C2218/33 , G02B5/08 , G02B5/0816 , G02B5/0891 , G03F1/22 , G03F7/16 , G03F7/2002 , G03F7/2004 , G03F7/70733 , H01L21/3081 , H01L21/3085
Abstract: Disclosed is a mask blank substrate for use in lithography, wherein the main surface on which the transfer pattern of the substrate is formed has a root mean square roughness (Rms) of not more than 0.15 nm obtained by measuring an area of 1 μm×1 μm with an atomic force microscope, and has a power spectrum density of not more than 10 nm4 at a spatial frequency of not less than 1 μm−1.
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