公开(公告)号：US20160293752A1

公开(公告)日：2016-10-06

申请号：US15082668

申请日：2016-03-28

Applicant: Infineon Technologies AG

Inventor： Markus Zundel

IPC: H01L29/78 ,  H01L29/423 ,  H01L29/66 ,  H01L21/321 ,  H01L29/08 ,  H01L29/06 ,  H01L29/40

CPC classification number: H01L29/7811 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0696 ,  H01L29/402 ,  H01L29/407 ,  H01L29/66734 ,  H01L29/7813

Abstract: An embodiment of a semiconductor device comprises a trench transistor cell array in a semiconductor body. The semiconductor device further comprises an edge termination region of the trench transistor cell array. At least two first auxiliary trench structures extend into the semiconductor body from a first side and are consecutively arranged along a lateral direction. The edge termination region is arranged, along the lateral direction, between the trench transistor cell array and the at least two first auxiliary trench structures. First auxiliary electrodes in the at least two first auxiliary trench structures are electrically connected together and electrically decoupled from electrodes in trenches of the trench transistor cell array.

Abstract translation: 半导体器件的实施例包括半导体本体中的沟槽晶体管单元阵列。 半导体器件还包括沟槽晶体管单元阵列的边缘终端区。 至少两个第一辅助沟槽结构从第一侧延伸到半导体本体中并且沿着横向连续地布置。 边缘终止区沿着横向布置在沟槽晶体管单元阵列和至少两个第一辅助沟槽结构之间。 所述至少两个第一辅助沟槽结构中的第一辅助电极电连接在一起并与沟槽晶体管单元阵列的沟槽中的电极电分离。

公开(公告)号：US20160284840A1

公开(公告)日：2016-09-29

申请号：US15173337

申请日：2016-06-03

Applicant: Infineon Technologies AG

Inventor： Andreas Meiser ,  Markus Zundel

IPC: H01L29/78 ,  H01L29/40 ,  H01L29/10 ,  H01L29/66

CPC classification number: H01L29/7813 ,  H01L21/28008 ,  H01L21/28229 ,  H01L21/743 ,  H01L21/76877 ,  H01L21/76898 ,  H01L23/481 ,  H01L29/1095 ,  H01L29/401 ,  H01L29/407 ,  H01L29/4236 ,  H01L29/4916 ,  H01L29/495 ,  H01L29/51 ,  H01L29/66734 ,  H01L29/7827 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A controllable semiconductor component is produced by providing a semiconductor body with a top side and a bottom side, and forming a first trench protruding from the top side into the semiconductor body and a second trench protruding from the top side into the semiconductor body. In a common process, an oxide layer is formed in the first trench and in the second trench such that the oxide layer fills the first trench and electrically insulates a surface of the second trench. The oxide layer is removed from the first trench completely or at least partly such that the semiconductor body has an exposed first surface area arranged in the first trench. An electrically conductive material is filled into the second trench, and the semiconductor body and the oxide layer are partially removed such that the electrically conductive material has an exposed second surface area at the bottom side.

Abstract translation: 通过提供具有顶侧和底侧的半导体本体，并且形成从顶侧突出到半导体本体中的第一沟槽和从顶侧突出到半导体本体中的第二沟槽来制造可控半导体部件。 在通常的工艺中，在第一沟槽和第二沟槽中形成氧化物层，使得氧化物层填充第一沟槽并使第二沟槽的表面电绝缘。 完全或至少部分地从第一沟槽去除氧化物层，使得半导体主体具有布置在第一沟槽中的暴露的第一表面区域。 将导电材料填充到第二沟槽中，并且半导体本体和氧化物层被部分地去除，使得导电材料在底侧具有暴露的第二表面区域。

公开(公告)号：US20160254200A1

公开(公告)日：2016-09-01

申请号：US15149765

申请日：2016-05-09

Applicant: Infineon Technologies AG

Inventor： Markus Zundel ,  Uwe Schmalzbauer ,  Rudolf Zelsacher

IPC: H01L21/66 ,  H01L23/00 ,  H01L29/739

CPC classification number: H01L22/14 ,  H01L22/32 ,  H01L22/34 ,  H01L24/05 ,  H01L24/06 ,  H01L24/32 ,  H01L29/7391 ,  H01L29/7397 ,  H01L2224/04042 ,  H01L2224/05023 ,  H01L2224/0603 ,  H01L2224/06181 ,  H01L2224/32245 ,  H01L2924/12036 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/00

Abstract: A semiconductor component includes a semiconductor body having a bottom side, a top side spaced distant from the bottom side in a vertical direction, and a thickness in the vertical direction, and a crack sensor configured to detect a crack in the semiconductor body. The crack sensor extends into the semiconductor body. A distance between the crack sensor and the bottom side is less than the thickness of the semiconductor body. A crack in the semiconductor body is detected by specifying a first value of a characteristic variable of the crack sensor, determining a second value of the characteristic variable of the crack sensor at a different time than the first value is specified, and determining the semiconductor body has a crack if the second value differs from the first value by more than a pre-defined difference.

Abstract translation: 半导体部件包括半导体本体，其具有底侧，与上下方向的底侧间隔开的顶面，以及垂直方向的厚度，以及构造为检测半导体本体的裂纹的裂纹传感器。 裂纹传感器延伸到半导体体内。 裂纹传感器和底侧之间的距离小于半导体本体的厚度。 通过指定裂纹传感器的特性变量的第一值，确定裂纹传感器的特性变量的第二值与指定第一值不同的时间来检测半导体本体中的裂纹，并且确定半导体本体 如果第二个值与第一个值的差异大于预定义的差异，则会产生破裂。

公开(公告)号：US09349854B2

公开(公告)日：2016-05-24

申请号：US14045925

申请日：2013-10-04

Applicant: Infineon Technologies AG

Inventor： Markus Zundel ,  Peter Brandl

IPC: H01L23/00 ,  H01L29/78 ,  H01L29/10 ,  H01L29/66 ,  H01L29/40 ,  H01L29/423 ,  H01L29/08 ,  H01L29/06

CPC classification number: H01L29/7813 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/0646 ,  H01L29/086 ,  H01L29/0878 ,  H01L29/105 ,  H01L29/1083 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/42368 ,  H01L29/66734 ,  H01L29/7803 ,  H01L29/7811 ,  H01L29/7815

Abstract: A semiconductor device includes a vertical IGFET in a first area of a semiconductor body, the vertical IGFET having a drift zone between a body zone and a drain electrode, the drift zone having a vertical dopant profile of a first conductivity type being a superposition of a first dopant profile declining with increasing distance from the drain electrode and dominating the vertical dopant profile in a first zone next to the drain electrode and a second dopant profile being a broadened peak dopant profile and dominating the vertical dopant profile in a second zone next to the body zone.

Abstract translation: 半导体器件包括在半导体本体的第一区域中的垂直IGFET，垂直IGFET具有在体区和漏极之间的漂移区，漂移区具有第一导电类型的垂直掺杂剂分布， 第一掺杂剂分布随着与漏极电极的距离增加而下降，并且在靠近漏电极的第一区域中支配垂直掺杂剂分布，第二掺杂剂分布是扩展的峰值掺杂物分布，并且在邻近的第二区域中支配垂直掺杂剂分布 身体区域。

公开(公告)号：US09343381B2

公开(公告)日：2016-05-17

申请号：US13899906

申请日：2013-05-22

Applicant: Infineon Technologies AG

Inventor： Markus Zundel ,  Uwe Schmalzbauer ,  Rudolf Zelsacher

IPC: H01L27/14 ,  H01L21/66 ,  H01L23/00

CPC classification number: H01L22/14 ,  H01L22/32 ,  H01L22/34 ,  H01L24/05 ,  H01L24/06 ,  H01L24/32 ,  H01L29/7391 ,  H01L29/7397 ,  H01L2224/04042 ,  H01L2224/05023 ,  H01L2224/0603 ,  H01L2224/06181 ,  H01L2224/32245 ,  H01L2924/12036 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/00

Abstract: A first embodiment relates to a semiconductor component. The semiconductor component has a semiconductor body with a bottom side and a top side spaced distant from the bottom side in a vertical direction. In the vertical direction, the semiconductor body has a certain thickness. The semiconductor component further has a crack sensor configured to detect a crack in the semiconductor body. The crack sensor extends into the semiconductor body. A distance between the crack sensor and the bottom side is less than the thickness of the semiconductor body.

Abstract translation: 第一实施例涉及半导体部件。 半导体部件具有半导体本体，其具有在垂直方向上与底侧隔开的底侧和顶侧。 在垂直方向上，半导体本体具有一定的厚度。 半导体部件还具有构造成检测半导体本体的裂纹的裂纹传感器。 裂纹传感器延伸到半导体体内。 裂纹传感器和底侧之间的距离小于半导体本体的厚度。

公开(公告)号：US20160111255A1

公开(公告)日：2016-04-21

申请号：US14977625

申请日：2015-12-21

Applicant: Infineon Technologies AG

Inventor： Manfred Engelhardt ,  Gudrun Stranzl ,  Markus Zundel ,  Hubert Maier

IPC: H01J37/32

CPC classification number: H01J37/32009 ,  B28D5/00 ,  H01J2237/334 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2221/6834

Abstract: Various methods and apparatuses are provided relating to separation of a substrate into a plurality of parts. For example, first a partial separation is performed and then the partially separated substrate is completely separated into a plurality of parts.

公开(公告)号：US09306011B2

公开(公告)日：2016-04-05

申请号：US14049839

申请日：2013-10-09

Applicant: Infineon Technologies AG

Inventor： Markus Zundel ,  Thomas Schweinboeck ,  Jesper Wittborn ,  Erwin Bacher ,  Juergen Holzmueller ,  Hans-Joachim Schulze

IPC: H01L23/58 ,  H01L29/36 ,  H01L21/265 ,  H01L21/66 ,  H01L51/05 ,  H01L29/06 ,  H01L21/266

CPC classification number: H01L21/266 ,  H01L21/265 ,  H01L21/26513 ,  H01L21/26546 ,  H01L22/30 ,  H01L22/32 ,  H01L22/34 ,  H01L29/0692 ,  H01L29/36 ,  H01L51/0002 ,  H01L51/05

Abstract: A semiconductor device includes a semiconductor substrate. The semiconductor substrate includes a plurality of first doping regions of a first doping structure arranged at a main surface of the semiconductor substrate and a plurality of second doping regions of the first doping structure arranged at the main surface of the semiconductor substrate. The first doping regions of the plurality of first doping regions of the first doping structure include dopants of a first conductivity type with different doping concentrations. Further, the second doping regions of the plurality of second doping regions of the first doping structure include dopants of a second conductivity type with different doping concentrations. At least one first doping region of the plurality of first doping regions of the first doping structure partly overlaps at least one second doping region of the plurality of second doping regions of the first doping structure causing an overlap region arranged at the main surface.

Abstract translation: 半导体器件包括半导体衬底。 半导体衬底包括布置在半导体衬底的主表面上的第一掺杂结构的多个第一掺杂区域和布置在半导体衬底的主表面处的第一掺杂结构的多个第二掺杂区域。 第一掺杂结构的多个第一掺杂区的第一掺杂区包括具有不同掺杂浓度的第一导电类型的掺杂剂。 此外，第一掺杂结构的多个第二掺杂区域的第二掺杂区域包括具有不同掺杂浓度的第二导电类型的掺杂剂。 第一掺杂结构的多个第一掺杂区域中的至少一个第一掺杂区域部分地与第一掺杂结构的多个第二掺杂区域中的至少一个第二掺杂区重叠，导致布置在主表面处的重叠区域。

公开(公告)号：US09299834B2

公开(公告)日：2016-03-29

申请号：US13933047

申请日：2013-07-01

Applicant: Infineon Technologies AG

Inventor： Markus Zundel ,  Franz Hirler ,  Norbert Krischke

IPC: H01L29/76 ,  H01L29/78 ,  H01L21/74 ,  H01L27/07 ,  H01L29/40 ,  H01L29/417 ,  H01L29/66 ,  H01L29/94 ,  H01L49/02 ,  H01L29/06

CPC classification number: H01L29/7827 ,  H01L21/743 ,  H01L27/0733 ,  H01L28/40 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/66734 ,  H01L29/7803 ,  H01L29/7804 ,  H01L29/7809 ,  H01L29/7813 ,  H01L29/7816 ,  H01L29/945

Abstract: A semiconductor component arrangement includes a semiconductor body, a transistor structure, a further component, and at least a first electrode structure. The semiconductor body has a first side and a second side. The transistor structure is integrated in the semiconductor body, and includes a source and a drain. The further component is also integrated in the semiconductor body. The first electrode structure is disposed in at least a first trench, and includes at least one electrode. The first electrode structure electrically connects at least one of the source and the drain to the further component.

Abstract translation: 半导体元件布置包括半导体本体，晶体管结构，另外的元件以及至少第一电极结构。 半导体本体具有第一面和第二面。 晶体管结构集成在半导体本体中，并且包括源极和漏极。 另外的部件也集成在半导体本体中。 第一电极结构设置在至少第一沟槽中，并且包括至少一个电极。 第一电极结构将源极和漏极中的至少一个电连接到另一个部件。

公开(公告)号：US20150348776A1

公开(公告)日：2015-12-03

申请号：US14824339

申请日：2015-08-12

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Alexander Susiti ,  Markus Zundel ,  Reinhard Ploss

IPC: H01L21/02 ,  H01L23/29 ,  H01L23/31 ,  H01L21/3115

CPC classification number: H01L29/7813 ,  H01L21/02123 ,  H01L21/02129 ,  H01L21/02321 ,  H01L21/26506 ,  H01L21/283 ,  H01L21/3115 ,  H01L21/31155 ,  H01L23/291 ,  H01L23/3171 ,  H01L29/06 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/4236 ,  H01L29/4916 ,  H01L29/66348 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7802 ,  H01L29/7809 ,  H01L29/7811 ,  H01L29/861 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of manufacturing a semiconductor device includes forming a continuous silicate glass structure over a first surface of a semiconductor body, including a first part of the continuous glass structure over an active area of the semiconductor body and a second part of the continuous glass structure over an area of the semiconductor body outside of the active area. A first composition of dopants included in the first part of continuous glass structure differs from a second composition of dopants of the second part of the continuous glass structure.

Abstract translation: 一种制造半导体器件的方法包括在半导体本体的第一表面上形成连续的硅酸盐玻璃结构，该第一表面包括半导体本体的有源区域上的连续玻璃结构的第一部分和连续玻璃结构的第二部分， 半导体主体的有效区域外的区域。 连续玻璃结构的第一部分中包括的掺杂剂的第一组合物不同于连续玻璃结构的第二部分的第二种掺杂剂组合物。

公开(公告)号：US09184284B2

公开(公告)日：2015-11-10

申请号：US13731422

申请日：2012-12-31

Applicant: Infineon Technologies AG

Inventor： Markus Zundel ,  Peter Nelle

IPC: H01L29/66 ,  H01L29/78 ,  H03K17/14 ,  H03K17/16

CPC classification number: H01L29/7827 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/7804 ,  H01L29/7813 ,  H03K17/145 ,  H03K17/162

Abstract: A method for operating a field-effect transistor having a source terminal, a drain terminal, a gate terminal, a drift region and a dielectric region adjoining the drift region, is provided. The method includes: connecting at least one of the drain terminal and the source terminal to a load; applying a sequence of voltage pulses between the gate terminal and the source terminal to repetitively switch the field-effect transistor such that the field-effect transistor is driven in an avalanche mode between the voltage pulses, during the avalanche mode avalanche multiplication occurring in the drift region close to the dielectric region; and applying at least one relaxation pulse to the field-effect transistor to reduce an accumulation of charges in the dielectric region due to hot charge carriers generated in the avalanche mode. Further, a field-effect transistor and a circuit configuration including the field-effect transistor are provided.

Abstract translation: 提供一种用于操作具有源极端子，漏极端子，栅极端子，漂移区域和与漂移区域相邻的电介质区域的场效应晶体管的方法。 该方法包括：将至少一个漏极端子和源极端子连接到负载; 在栅极端子和源极端子之间施加一系列电压脉冲以重复地切换场效应晶体管，使得场效应晶体管在电压脉冲之间以雪崩模式驱动，在雪崩模式中，在漂移中出现雪崩倍增 靠近电介质区域的区域; 以及向场效应晶体管施加至少一个弛豫脉冲，以减少由于在雪崩模式下产生的热电荷载流子而在电介质区域中的电荷积累。 此外，提供场效应晶体管和包括场效应晶体管的电路配置。