公开(公告)号：US10791589B2

公开(公告)日：2020-09-29

申请号：US15879110

申请日：2018-01-24

Applicant: Infineon Technologies AG

Inventor： Ulrich Krumbein ,  Werner Simbuerger ,  Dietmar Straeussnigg ,  Andreas Wiesbauer

IPC: H05B3/02 ,  G01L9/12 ,  G01L19/00 ,  H05B1/02 ,  G01K1/20 ,  G01L19/04 ,  G01N33/00 ,  H04R1/08 ,  H04R9/02

Abstract: A sensor circuit and a method for compensating for temperature changes are provided. In accordance with an embodiment, sensor circuit includes at least one sensor for determining a measurement variable; a heating structure; and at least one compensation circuit. The compensation circuit is configured to acquire information about a temperature change in an environment of the sensor, and to counteract a temperature change in the sensor on the basis of the information by driving the heating structure.

公开(公告)号：US20200166492A1

公开(公告)日：2020-05-28

申请号：US16692489

申请日：2019-11-22

Applicant: Infineon Technologies AG

Inventor： Prashanth Makaram ,  Ulrich Krumbein

IPC: G01N33/00 ,  G06F1/3203

Abstract: A method includes exposing gas sensitive material of a gas sensor device to different adjusted target gas concentrations, determining measurement values of the resistance of the gas sensitive material between first and second contact regions in response to the adjusted target gas concentration, determining a first gas sensor behavior model based on the measurement values of the resistance of the gas sensitive material as a function of the adjusted target gas concentration, translating the first gas sensor behavior model into a corresponding second gas sensor behavior model for the resistance of the gas sensitive material as a function of a control voltage, and sweeping the control voltage based on the second gas sensor behavior model over a control voltage range for providing control voltage dependent resistance data, wherein the control voltage dependent resistance data over the control voltage range form the calibration data for the gas sensor device.

公开(公告)号：US10231061B2

公开(公告)日：2019-03-12

申请号：US15581744

申请日：2017-04-28

Applicant: Infineon Technologies AG

Inventor： Alfons Dehe ,  Ulrich Krumbein

IPC: H04R19/00 ,  H04R19/04 ,  H04R7/04 ,  B81B3/00

Abstract: A sound transducer includes a housing with a sound port and a MEMS structure disposed in an interior space of the housing. The MEMS structure and the sound port are acoustically coupled to each other. The MEMS structure separates a front volume from a back volume of the housing. At least one vent hole of the MEMS structure allows a gas exchange between the front volume and the back volume. The sound port allows a liquid to enter the front volume. Further, the MEMS structure prevents liquid from entering the back volume.

公开(公告)号：US09967679B2

公开(公告)日：2018-05-08

申请号：US14613106

申请日：2015-02-03

Applicant: Infineon Technologies AG

Inventor： Ulrich Krumbein ,  Alfons Dehe

IPC: H04R23/00 ,  B81B7/02 ,  H04R17/02 ,  H04R19/00 ,  H04R19/04 ,  H04R31/00 ,  H04R19/01 ,  H04R19/02

CPC classification number: H04R23/00 ,  B81B7/02 ,  B81B2201/0257 ,  B81B2201/0278 ,  B81B2207/015 ,  H04R17/02 ,  H04R19/005 ,  H04R19/013 ,  H04R19/016 ,  H04R19/02 ,  H04R19/04 ,  H04R31/00 ,  H04R2201/003

Abstract: According to embodiment, a transducer includes a microfabricated element integrated on a single die and an interface IC coupled to the microfabricated element. The microfabricated element includes an acoustic transducer and a temperature sensor, and the interface IC is electrically coupled to the acoustic transducer and the temperature sensor.

公开(公告)号：US09902612B2

公开(公告)日：2018-02-27

申请号：US15629834

申请日：2017-06-22

Applicant: Infineon Technologies AG

Inventor： Alfons Dehe ,  Stefan Barzen ,  Ulrich Krumbein ,  Wolfgang Friza ,  Wolfgang Klein

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0072 ,  B81B2203/0109 ,  B81C1/00325

Abstract: A method for forming a microelectromechanical device may provide forming a first layer at least one of in or over a semiconductor carrier; forming a second layer at least one of in or over at least a central region of the first layer, such that a peripheral region of the first layer is at least partially free of the second layer; removing material under at least a central region of the second layer to release at least one of the central region of the second layer or a central region of the first layer; and/or removing material under at least the peripheral region of the first layer to such that the second layer is supported by the semiconductor carrier via the first layer.

公开(公告)号：US12297102B2

公开(公告)日：2025-05-13

申请号：US18540253

申请日：2023-12-14

Applicant: Infineon Technologies AG

Inventor： Wolfgang Klein ,  Evangelos Angelopoulos ,  Stefan Barzen ,  Marc Fueldner ,  Stefan Geißler ,  Matthias Friedrich Herrmann ,  Ulrich Krumbein ,  Konstantin Tkachuk ,  Giordano Tosolini ,  Juergen Wagner

IPC: B81C1/00 ,  B81B3/00 ,  B81B7/02 ,  H04R1/08 ,  H04R7/02 ,  H04R7/08 ,  H04R31/00

Abstract: In an embodiment, a method for forming a microfabricated structure includes depositing a first membrane on a substrate, depositing a first isolation layer on the first membrane, depositing a stator layer on the first isolation layer, forming a perforated stator from the stator layer, wherein the first isolation layer is disposed on a first surface of the perforated stator, depositing a second isolation layer on a second surface of the perforated stator and depositing a second membrane on the second isolation layer, including depositing a pillar coupled between the first membrane and the second membrane, wherein the first isolation layer includes a first glass layer having a low etch rate, and a second glass layer having a high etch rate embedded in the first glass layer.

公开(公告)号：US20220236244A1

公开(公告)日：2022-07-28

申请号：US17647651

申请日：2022-01-11

Applicant: Infineon Technologies AG

Inventor： Caterina Travan ,  Cecilia Carbonelli ,  Ulrich Krumbein

IPC: G01N33/00

Abstract: A method for determining a calibrated measurement value for a concentration of the target gas comprises obtaining a measurement signal based on the concentration of the target gas. The method further comprises determining the calibrated measurement value based on the measurement signal and based on a calibration model. The calibration model is based on calibration data of a plurality of test sensor units having the same type as the sensor unit.

公开(公告)号：US10981780B2

公开(公告)日：2021-04-20

申请号：US16543970

申请日：2019-08-19

Applicant: Infineon Technologies AG

Inventor： Wolfgang Klein ,  Evangelos Angelopoulos ,  Stefan Barzen ,  Marc Fueldner ,  Stefan Geissler ,  Matthias Friedrich Herrmann ,  Ulrich Krumbein ,  Konstantin Tkachuk ,  Giordano Tosolini ,  Juergen Wagner

IPC: B81C1/00 ,  B81B3/00 ,  B81B7/02 ,  H04R31/00 ,  H04R7/02 ,  H04R1/08 ,  H04R7/08

Abstract: A microfabricated structure includes a deflectable membrane, a first clamping layer on a first surface of the deflectable membrane, a second clamping layer on a second surface of the deflectable membrane, a first perforated backplate on the first clamping layer, and a second perforated backplate on the second clamping layer, wherein the first clamping layer comprises a first tapered edge portion having a negative slope between the first perforated backplate and the deflectable membrane.

公开(公告)号：US20200309665A1

公开(公告)日：2020-10-01

申请号：US16807698

申请日：2020-03-03

Applicant: Infineon Technologies AG

Inventor： Michael Schneider ,  Alfons Dehe ,  Manuel Dorfmeister ,  Christoph Glacer ,  Ulrich Krumbein ,  Ulrich Schmid ,  David Tumpold

IPC: G01N15/06

Abstract: A sensor element includes a membrane structure suspended on a frame structure, wherein the membrane structure includes a membrane element and an actuator. The membrane structure is deflectable in a first stable deflection state and in a second stable deflection state and is operable in a resonance mode in at least one of the first and the second stable deflection states. The actuator is configured to deflect the membrane structure in a first actuation state into one of the first and the second stable deflection states, and to operate the membrane structure in a second actuation state in a resonance mode having an associated resonance frequency.

公开(公告)号：US10589990B2

公开(公告)日：2020-03-17

申请号：US16134355

申请日：2018-09-18

Applicant: Infineon Technologies AG

Inventor： Alfons Dehe ,  Ulrich Krumbein ,  Gerhard Metzger-Brueckl ,  Johann Strasser ,  Juergen Wagner ,  Arnaud Walther

IPC: B81B7/02 ,  H04R19/00 ,  H04R19/04 ,  H04R1/28

Abstract: In accordance with an embodiment, a MEMS microphone includes a sound detection unit having a first membrane, a second membrane arranged at a distance from the first membrane, a low-pressure region arranged between the first membrane and the second membrane, a gas pressure that is reduced in relation to normal pressure being present in said low-pressure region, a counter electrode arranged in the low-pressure region, and a sound through-hole, which extends through the sound detection unit in a thickness direction of the sound detection unit; and a valve provided at the sound through-hole, said valve being configured to adopt a plurality of valve states, wherein a predetermined degree of transmission of the sound through-hole to sound is assigned to each valve state.