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公开(公告)号:US09985007B2
公开(公告)日:2018-05-29
申请号:US15393083
申请日:2016-12-28
Applicant: Invensas Corporation
Inventor: Min Tao , Hoki Kim , Ashok S. Prabhu , Zhuowen Sun , Wael Zohni , Belgacem Haba
IPC: H01L23/10 , H01L25/00 , H01L25/065 , H01L25/10
CPC classification number: H01L25/0657 , H01L21/4853 , H01L21/4857 , H01L21/486 , H01L21/52 , H01L21/565 , H01L23/3114 , H01L23/3128 , H01L23/3157 , H01L23/5283 , H01L23/5383 , H01L23/5384 , H01L23/5386 , H01L23/5389 , H01L24/02 , H01L24/09 , H01L24/46 , H01L24/49 , H01L24/83 , H01L25/0652 , H01L25/071 , H01L25/105 , H01L25/112 , H01L25/18 , H01L25/50 , H01L2224/02331 , H01L2224/02379 , H01L2224/0401 , H01L2224/04042 , H01L2224/16225 , H01L2224/16227 , H01L2224/16235 , H01L2224/32225 , H01L2225/06506 , H01L2225/06513 , H01L2225/06517 , H01L2225/06544 , H01L2225/06548 , H01L2225/06555 , H01L2225/06589 , H01L2225/1023 , H01L2225/1035 , H01L2225/1041 , H01L2225/1052 , H01L2225/1058 , H01L2225/1088 , H01L2924/15151 , H01L2924/15192 , H01L2924/15311 , H01L2924/18161 , H01L2924/19107
Abstract: Package-on-package (“PoP”) devices with multiple levels and methods therefor are disclosed. In a PoP device, a first integrated circuit die is surface mount coupled to an upper surface of a package substrate. First and second conductive lines are coupled to the upper surface of the package substrate respectively at different heights in a fan-out region. A first molding layer is formed over the upper surface of the package substrate. A first and a second wafer-level packaged microelectronic component are located above an upper surface of the first molding layer respectively surface mount coupled to a first and a second set of upper portions of the first conductive lines. A third and a fourth wafer-level packaged microelectronic component are located above the first and the second wafer-level packaged microelectronic component respectively surface mount coupled to a first and a second set of upper portions of the second conductive lines.
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12.
公开(公告)号:US09972609B2
公开(公告)日:2018-05-15
申请号:US15393112
申请日:2016-12-28
Applicant: Invensas Corporation
Inventor: Min Tao , Hoki Kim , Ashok S. Prabhu , Zhuowen Sun , Wael Zohni , Belgacem Haba
CPC classification number: H01L25/0657 , H01L21/4853 , H01L21/4857 , H01L21/486 , H01L21/52 , H01L21/565 , H01L23/3114 , H01L23/3128 , H01L23/3157 , H01L23/5283 , H01L23/5383 , H01L23/5384 , H01L23/5386 , H01L23/5389 , H01L24/02 , H01L24/09 , H01L24/46 , H01L24/49 , H01L24/83 , H01L25/0652 , H01L25/071 , H01L25/105 , H01L25/112 , H01L25/18 , H01L25/50 , H01L2224/02331 , H01L2224/02379 , H01L2224/0401 , H01L2224/04042 , H01L2224/16225 , H01L2224/16227 , H01L2224/16235 , H01L2224/32225 , H01L2225/06506 , H01L2225/06513 , H01L2225/06517 , H01L2225/06544 , H01L2225/06548 , H01L2225/06555 , H01L2225/06589 , H01L2225/1023 , H01L2225/1035 , H01L2225/1041 , H01L2225/1052 , H01L2225/1058 , H01L2225/1088 , H01L2924/15151 , H01L2924/15192 , H01L2924/15311 , H01L2924/18161 , H01L2924/19107
Abstract: Package-on-package (“PoP”) devices with WLP (“WLP”) components with dual RDLs (“RDLs”) for surface mount dies and methods therefor. In a PoP, a first IC die surface mount coupled to an upper surface of a package substrate. Conductive lines are coupled to the upper surface of the package substrate in a fan-out region. A molding layer is formed over the upper surface of the package substrate. A first and a second WLP microelectronic component are located at a same level above an upper surface of the molding layer respectively surface mount coupled to sets of upper portions of the conductive lines. Each of the first and the second WLP microelectronic components have a second IC die located between a first RDL and a second RDL. A third and a fourth IC die are respectively surface mount coupled over the first and the second WLP microelectronic components.
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公开(公告)号:US09972573B2
公开(公告)日:2018-05-15
申请号:US15393048
申请日:2016-12-28
Applicant: Invensas Corporation
Inventor: Min Tao , Hoki Kim , Ashok S. Prabhu , Zhuowen Sun , Wael Zohni , Belgacem Haba
CPC classification number: H01L25/0657 , H01L21/4853 , H01L21/4857 , H01L21/486 , H01L21/52 , H01L21/565 , H01L23/3114 , H01L23/3128 , H01L23/3157 , H01L23/5283 , H01L23/5383 , H01L23/5384 , H01L23/5386 , H01L23/5389 , H01L24/02 , H01L24/09 , H01L24/46 , H01L24/49 , H01L24/83 , H01L25/0652 , H01L25/071 , H01L25/105 , H01L25/112 , H01L25/18 , H01L25/50 , H01L2224/02331 , H01L2224/02379 , H01L2224/0401 , H01L2224/04042 , H01L2224/16225 , H01L2224/16227 , H01L2224/16235 , H01L2224/32225 , H01L2225/06506 , H01L2225/06513 , H01L2225/06517 , H01L2225/06544 , H01L2225/06548 , H01L2225/06555 , H01L2225/06589 , H01L2225/1023 , H01L2225/1035 , H01L2225/1041 , H01L2225/1052 , H01L2225/1058 , H01L2225/1088 , H01L2924/15151 , H01L2924/15192 , H01L2924/15311 , H01L2924/18161 , H01L2924/19107
Abstract: Wafer-level packaged components are disclosed. In a wafer-level-packaged, an integrated circuit die has first contacts in an inner third region of a surface of the integrated circuit die. A redistribution layer has second contacts in an inner third region of a first surface of the redistribution layer and third contacts in an outer third region of a second surface of the redistribution layer opposite the first surface thereof. The second contacts of the redistribution layer are coupled for electrical conductivity to the first contacts of the integrated circuit die with the surface of the integrated circuit die face-to-face with the first surface of the redistribution layer. The third contacts are offset from the second contacts for being positioned in a fan-out region for association at least with the outer third region of the second surface of the redistribution layer, the third contacts being surface mount contacts.
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公开(公告)号:US20180040587A1
公开(公告)日:2018-02-08
申请号:US15669269
申请日:2017-08-04
Applicant: Invensas Corporation
Inventor: Min Tao , Zhuowen Sun , Belgacem Haba , Hoki Kim , Wael Zohni , Shaowu Huang
IPC: H01L25/065 , H01L23/367 , H01L25/18 , H01L23/31 , H01L25/00 , H01L23/00
Abstract: Vertical memory modules enabled by fan-out redistribution layer(s) (RDLs) are provided. Memory dies may be stacked with each die having a signal pad directed to a sidewall of the die. A redistribution layer (RDL) is built on sidewalls of the stacked dies and coupled with the signal pads. The RDL may fan-out to UBM and solder balls, for example. An alternative process reconstitutes dies on a carrier with a first RDL on a front side of the dies. The dies and first RDL are encapsulated, and the modules vertically disposed for a second reconstitution on a second carrier. A second RDL is applied to exposed contacts of the vertically disposed modules and first RDLs. The vertical modules and second RDL are encapsulated in turn with a second mold material. The assembly may be singulated into individual memory modules, each with a fan-out RDL on the sidewalls of the vertically disposed dies.
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公开(公告)号:US20180026011A1
公开(公告)日:2018-01-25
申请号:US15393100
申请日:2016-12-28
Applicant: Invensas Corporation
Inventor: Min Tao , Hoki Kim , Ashok S. Prabhu , Zhuowen Sun , Wael Zohni , Belgacem Haba
CPC classification number: H01L25/0657 , H01L21/4853 , H01L21/4857 , H01L21/486 , H01L21/52 , H01L21/565 , H01L23/3114 , H01L23/3128 , H01L23/3157 , H01L23/5283 , H01L23/5383 , H01L23/5384 , H01L23/5386 , H01L23/5389 , H01L24/02 , H01L24/09 , H01L24/46 , H01L24/49 , H01L24/83 , H01L25/0652 , H01L25/071 , H01L25/105 , H01L25/112 , H01L25/18 , H01L25/50 , H01L2224/02331 , H01L2224/02379 , H01L2224/0401 , H01L2224/04042 , H01L2224/16225 , H01L2224/16227 , H01L2224/16235 , H01L2224/32225 , H01L2225/06506 , H01L2225/06513 , H01L2225/06517 , H01L2225/06544 , H01L2225/06548 , H01L2225/06555 , H01L2225/06589 , H01L2225/1023 , H01L2225/1035 , H01L2225/1041 , H01L2225/1052 , H01L2225/1058 , H01L2225/1088 , H01L2924/15151 , H01L2924/15192 , H01L2924/15311 , H01L2924/18161 , H01L2924/19107
Abstract: Package-on-package (“PoP”) devices with same level wafer-level packaged (“WLP”) components and methods therefor are disclosed. In a PoP device, a first integrated circuit die is surface mount coupled to an upper surface of a package substrate. Conductive lines are coupled to the upper surface of the package substrate in a fan-out region. The first conductive lines extend away from the upper surface of the package substrate. A molding layer is formed over the upper surface of the package substrate, around sidewall surfaces of the first integrated circuit die, and around bases and shafts of the conductive lines. WLP microelectronic components are located at a same level above an upper surface of the molding layer respectively surface mount coupled to sets of upper portions of the conductive lines.
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16.
公开(公告)号:US09728524B1
公开(公告)日:2017-08-08
申请号:US15198615
申请日:2016-06-30
Applicant: Invensas Corporation
Inventor: Min Tao , Zhuowen Sun , Hoki Kim , Wael Zohni , Akash Agrawal
IPC: H01L23/49 , H01L23/31 , H01L21/56 , H01L25/10 , H01L25/065 , H01L23/498 , H01L25/00 , H05K1/18 , H05K1/11
CPC classification number: H01L25/105 , H01L23/49805 , H01L25/0657 , H01L25/50 , H01L2224/48091 , H01L2224/48145 , H01L2225/06506 , H01L2225/0651 , H01L2225/06562 , H01L2225/06582 , H01L2225/06589 , H05K1/11 , H05K1/181 , H05K2201/10378 , H01L2924/00014 , H01L2924/00012
Abstract: A microelectronic assembly includes a plurality of stacked microelectronic packages, each comprising a dielectric element having a major surface, an interconnect region adjacent an interconnect edge surface which extends away from the major surface, and plurality of package contacts at the interconnect region. A microelectronic element has a front surface with chip contacts thereon coupled to the package contacts, the front surface overlying and parallel to the major surface. The microelectronic packages are stacked with planes defined by the dielectric elements substantially parallel to one another, and the package contacts electrically coupled with panel contacts at a mounting surface of a circuit panel via an electrically conductive material, the planes defined by the dielectric elements being oriented at a substantial angle to the mounting surface.
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