公开(公告)号：US5284549A

公开(公告)日：1994-02-08

申请号：US816190

申请日：1992-01-02

Applicant: Michael S. Barnes ,  Melanie M. Chow ,  John C. Forster ,  Michael A. Fury ,  Chang-Ching Kin ,  Harris C. Jones ,  John H. Keller ,  James A. O'Neill

Inventor： Michael S. Barnes ,  Melanie M. Chow ,  John C. Forster ,  Michael A. Fury ,  Chang-Ching Kin ,  Harris C. Jones ,  John H. Keller ,  James A. O'Neill

IPC: C03C15/00 ,  H01L21/311 ,  H01L21/00

CPC classification number: C03C15/00 ,  H01L21/31116 ,  Y10S438/97

Abstract: A CHF.sub.3 -based RIE etching process is disclosed using a nitrogen additive to provide high selectivity of SiO.sub.2 or PSG to Al.sub.2 O.sub.3, low chamfering of a photoresist mask, and low RIE lag. The process uses a pressure in the range of about 200-1,000 mTorr, and an appropriate RF bias power, selected based on the size of the substrate being etched. The substrate mounting pedestal is preferably maintained at a temperature of about 0.degree. C. Nitrogen can be provided from a nitrogen-containing molecule, or as N.sub.2. He gas can be added to the gas mixture to enhance the RIE lag-reducing effect of the nitrogen.

Abstract translation: 使用氮添加剂公开了基于CHF 3的RIE蚀刻工艺，以提供SiO 2或PSG对Al 2 O 3的高选择性，光刻胶掩模的低倒角和低RIE滞后。 该方法使用约200-1,000mTorr范围内的压力和基于被蚀刻的基底的尺寸选择的适当的RF偏置功率。 衬底安装基座优选保持在约0℃的温度。氮可以由含氮分子或N 2提供。 可以将气体加入到气体混合物中，以提高氮气的RIE滞后效应。

公开(公告)号：US5200023A

公开(公告)日：1993-04-06

申请号：US753189

申请日：1991-08-30

Applicant: George G. Gifford ,  James A. O'Neill

Inventor： George G. Gifford ,  James A. O'Neill

IPC: H01J37/32 ,  H05H1/46

CPC classification number: H01J37/32871 ,  H01J37/32935 ,  H01J37/32963 ,  H01J37/3299 ,  H05H1/46

Abstract: An infrared television camera (20) monitors the etching of a substrate (26) in-situ in an etch chamber (24). Temporal and spatial resolution of IR emissions is obtained by monitoring the top surface of the substrate (26) in two-dimensions throughout the course of the etching process. Anomalies in temperature detected on the top surface of the substrate (26) can indicate defects in the substrate (26) itself or in the operation of the etching apparatus. Process feedback control is achieved by adjusting various parameters of the etching apparatus (i.e., gas-pressure, flow pattern, magnetic field, coolant flow to electrode, or the like) to compensate for etching anomalies. Etch uniformity and etch endpoint monitoring is achieved by monitoring the IR emissions resulting from exothermic reaction of the film being etched. IR emissions decline at the end of an exothermic etch reaction. Particulate matter which might otherwise harm the substrate (26) can be identified in the gas-phase with a second IR television camera (34) which images the region above the substrate (26). Particulate matter appears as localized "hot spots" within the gas plasma, and the identification of particulate matter allows corrective measures to be taken.

Abstract translation: 红外电视摄像机（20）在蚀刻室（24）中原位监测衬底（26）的蚀刻。 通过在蚀刻过程的整个过程中二维地监测衬底（26）的顶表面来获得IR发射的时间和空间分辨率。 在基板（26）的顶表面上检测到的温度异常可以指示基板（26）本身的缺陷或蚀刻装置的操作中的缺陷。 通过调整蚀刻装置的各种参数（即，气体压力，流动模式，磁场，冷却剂流向电极等）来实现过程反馈控制，以补偿蚀刻异常。 蚀刻均匀性和蚀刻端点监测通过监测被蚀刻的膜的放热反应产生的IR辐射来实现。 在放热蚀刻反应结束时，IR辐射下降。 否则可能会损害基板（26）的颗粒物质可以在对基板（26）上方的区域进行成像的第二IR电视摄像机（34）的气相中识别。 颗粒物质在气体等离子体中呈现为局部“热点”，微粒物质的识别允许采取纠正措施。

公开(公告)号：US4746493A

公开(公告)日：1988-05-24

申请号：US907245

申请日：1986-09-15

Applicant: James A. O'Neill

Inventor： James A. O'Neill

IPC: B01J19/12 ,  B01J1/10 ,  B01K1/00

CPC classification number: B01J19/121

Abstract: A process for inducing photochemical reactions using laser radiation employs a dielectric waveguide cell formed by a capillary passage communicating at its ends with a gas inlet chamber and a gas outlet chamber, each chamber being configured to encompass a cone of laser radiation focussed onto, or diverging from, the respective end of the capillary passage. The passage is configured to propagate the laser radiation therealong in one or more selected waveguide modes, thus defining an extended region of high fluence.

Abstract translation: 使用激光辐射诱导光化学反应的方法采用由其末端与气体入口室和气体出口室连通的毛细通道形成的电介质波导电池，每个腔室被构造成包围聚焦于或发散的激光辐射锥体 从毛细通道的相应末端开始。 该通道被配置成在一个或多个所选择的波导模式中传播其上的激光辐射，从而限定了高注量的扩展区域。

公开(公告)号：US4622115A

公开(公告)日：1986-11-11

申请号：US743084

申请日：1985-06-10

Applicant: James A. O'Neill

Inventor： James A. O'Neill

IPC: B01J19/12

CPC classification number: B01J19/121

Abstract: A process for inducing photochemical reactions using laser radiation employs a dielectric waveguide cell formed by a capillary passage communicating at its ends with a gas inlet chamber and a gas outlet chamber, each chamber being configured to encompass a cone of laser radiation focussed onto, or diverging from, the respective end of the capillary passage. The passage is configured to propagate the laser radiation therealong in one or more selected waveguide modes, thus defining an extended region of high fluence.

Abstract translation: 使用激光辐射诱导光化学反应的方法采用由其末端与气体入口室和气体出口室连通的毛细通道形成的电介质波导电池，每个腔室被构造成包围聚焦于或发散的激光辐射锥体 从毛细通道的相应末端开始。 该通道被配置成在一个或多个所选择的波导模式中传播其上的激光辐射，从而限定了高注量的扩展区域。

公开(公告)号：US4620909A

公开(公告)日：1986-11-04

申请号：US547475

申请日：1983-10-31

Applicant: Graham M. Keyser ,  David L. Mader ,  James A. O'Neill

Inventor： Graham M. Keyser ,  David L. Mader ,  James A. O'Neill

IPC: B01D59/32 ,  B01D59/34 ,  C07C17/00

CPC classification number: B01D59/34

Abstract: A method is described and claimed for the replenishment of deuterium or tritium concentration in a laser isotope separation process for the production of D.sub.2 O, or for the recovery of tritium from contaminated D.sub.2 O or H.sub.2 O. A working compound is selectively photodissociated by a laser beam and is replenished by contacting an exchange liquid in a countercurrent fashion in a first contacting column. The exchange liquid is replenished with isotope by in turn being contacted with a feed stream in a second contacting apparatus. This second contacting apparatus may be a gas/liquid or liquid/liquid contacting apparatus and the countercurrent flows therein may be about equal or unequal.

Abstract translation: 描述并要求保护用于在用于生产D 2 O的激光同位素分离过程中补充氘或氚浓度的方法，或从污染的D 2 O或H 2 O中回收氚。 工作化合物通过激光束选择性地光分解，并且通过在第一接触塔中以逆流方式接触交换液体来补充。 交换液体通过在第二接触装置中与进料流接触而补充同位素。 该第二接触装置可以是气体/液体或液体/液体接触装置，并且其中的逆流流动可以大致相等或不相等。