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公开(公告)号：US20240066161A1
公开(公告)日：2024-02-29
申请号：US17698299
申请日：2022-03-18
Applicant: TellaPure, LLC
Inventor： Edgar Bryan Hill , Dawn Price , Hidetaka Noda , Masahiko Kaneko
CPC classification number: A61L2/14 , H01J37/32449 , H01J37/32559 , H01J37/32577 , H01J37/32825 , H01J37/32871 , A61L2202/11 , A61L2209/14 , H01J2237/335
Abstract: A plasma generator generates atmospheric pressure, low temperature plasma (cold plasma), and includes a thin plate-like first electrode defining a planar bottom surface. A thin plate-like second electrode defines a planar top surface. The second electrode opposes the first electrode, such that the bottom surface of the first electrode faces the top surface of the second electrode. A first dielectric layer is disposed on the bottom surface of the first electrode, and a second dielectric layer is disposed on the top surface of the second electrode. A spacer supports the first and second electrodes to define a predetermined gap between the first and second dielectric layers. A power supply supplies electrical power to the first and second electrodes at a predetermined voltage and frequency, such that, based on the predetermined gap between the first and second dielectric layers, cold plasma is generated.
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公开(公告)号：US20180155817A1
公开(公告)日：2018-06-07
申请号：US15832591
申请日：2017-12-05
Applicant: TOKYO ELECTRON LIMITED
Inventor： Junichi TAKEI , Naoyuki SUZUKI , Tetsuya MIYASHITA
CPC classification number: C23C14/0063 , C23C14/0078 , C23C14/04 , C23C14/34 , C23C14/50 , C23C14/505 , H01J37/32357 , H01J37/32513 , H01J37/32715 , H01J37/32871 , H01J37/3447 , H01L21/67748
Abstract: A film forming apparatus includes: a chamber main body defining a chamber; a slit plate partitioning the chamber into a first space and a second space below the first space, the slit plate having a slit penetrating therethrough; a holder holding a target in the first space; a stage for supporting a substrate, the stage being movable in a moving direction perpendicular to a longitudinal direction of the slit in a moving area including an area directly below the slit; and a mechanism for moving the stage along the moving direction. In order to suppress scattering of particles from the target to another area other than the moving area in the second space through the slit, the stage has one or more protruding portions which provide upwardly and/or downwardly bent portions in a path around the stage between the slit and the another area in the second space.
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公开(公告)号：US09966238B2
公开(公告)日：2018-05-08
申请号：US14669462
申请日：2015-03-26
Applicant: Hitachi Kokusai Electric Inc.
Inventor： Masanori Nakayama
IPC: H01J37/32 , H01J37/34 , H01L21/67 , H01L21/687
CPC classification number: H01J37/32862 , H01J37/3266 , H01J37/32871 , H01J37/32926 , H01J37/3405 , H01J37/3464 , H01L21/67069 , H01L21/68742 , H01L21/6875
Abstract: Provided is a technique capable of suppressing a product substrate from being contaminated with a contaminant generated in a process chamber. The method includes (a) processing a substrate supported by a first substrate support by generating plasma in a first plasma generating region in a process chamber; and (b) removing a metal substance in the process chamber by generating plasma in the first plasma generating region and a second plasma generating region disposed between the first substrate support and a back surface of a substrate supported by a second substrate support.
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公开(公告)号：US09903016B2
公开(公告)日：2018-02-27
申请号：US15389964
申请日：2016-12-23
Applicant: E/G ELECTRO-GRAPH, INC.
Inventor： Michael Vella
CPC classification number: C23C14/48 , C23C14/048 , H01B5/14 , H01B7/17 , H01B13/06 , H01J37/02 , H01J37/08 , H01J37/32541 , H01J37/3255 , H01J37/32871 , H01J2237/022 , H01T19/00
Abstract: In systems where insulating deposits form during normal operation, electrodes are configured with a preformed dielectric thereon, wherein the preformed dielectric is formed with a geometric feature that preforms a triple junction. These triple junctions enhance low level discharge activity to facilitate localized breakdown of the deposits and maintain electrode conductivity.
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公开(公告)号：US20180025915A1
公开(公告)日：2018-01-25
申请号：US15546475
申请日：2016-04-07
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Yinghai MA , Liangjian LI , Yueping ZUO
IPC: H01L21/311 , H01J37/32 , H01L21/768
CPC classification number: H01L21/31116 , G02F1/1368 , G02F2202/104 , H01J37/3244 , H01J37/32871 , H01J2237/334 , H01J2237/3347 , H01L21/76805 , H01L27/1259
Abstract: A dry etching method includes performing at least two etching steps, and further includes injecting protective gas into an etch chamber for processing between any two successive etching steps, wherein the protective gas generates plasma to neutralize electrons accumulated on a side wall of an etching trench. According to the present disclosure, hydrogen plasma is added in an etching process to remove the electrons accumulated on the side wall of the etching trench so as to reduce the microetching effect in multiple etching. In this way, process stability and reliability of a display substrate are improved.
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Patent Agency Ranking
公开(公告)号：US09719177B2
公开(公告)日：2017-08-01
申请号：US13877960
申请日：2011-10-03
Applicant: Juergen Weichart
Inventor： Juergen Weichart
CPC classification number: C23F4/00 , C23C14/50 , C23C14/541 , C23C16/455 , C23C16/45517 , C23C16/463 , H01J37/32522 , H01J37/32871
Abstract: An etching chamber is equipped with an actively-cooled element preferentially adsorbs volatile compounds that are evolved from a polymeric layer of a wafer during etching, which compounds will act as contaminants if re-deposited on the wafer, for example on exposed metal contact portions where they may interfere with subsequent deposition of metal contact layers. In desirable embodiments, a getter sublimation pump is also provided in the etching chamber as a source of getter material. Methods of etching in such a chamber are also disclosed.
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公开(公告)号：US20170162369A1
公开(公告)日：2017-06-08
申请号：US15260300
申请日：2016-09-08
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sung-ho KANG , Ki-chul KIM , Yong-hun LEE , Pyung MOON , Sun-young LEE , Un-ki KIM
IPC: H01J37/32 , H01L21/324 , H01L21/67
CPC classification number: H01J37/32871 , H01J37/32862 , H01L21/324
Abstract: A method of performing a surface treatment includes passivating a surface of an insulating part in a reaction chamber, and then performing a hydrogen plasma annealing treatment on a substrate in the reaction chamber. The passivation of the surface of the insulating part includes supplying a nitrogen-based gas into the reaction chamber and exciting the nitrogen-based gas in the reaction chamber using a plasma generator.
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公开(公告)号：US20170107608A1
公开(公告)日：2017-04-20
申请号：US15389964
申请日：2016-12-23
Applicant: E/G ELECTRO-GRAPH, INC.
Inventor： MICHAEL VELLA
CPC classification number: C23C14/48 , C23C14/048 , H01B5/14 , H01B7/17 , H01B13/06 , H01J37/02 , H01J37/08 , H01J37/32541 , H01J37/3255 , H01J37/32871 , H01J2237/022 , H01T19/00
Abstract: In systems where insulating deposits form during normal operation, electrodes are configured with a preformed dielectric thereon, wherein the preformed dielectric is formed with a geometric feature that performing a triple junction. These triple junctions enhance low level discharge activity to facilitate localized breakdown of the deposits and maintain electrode conductivity.
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公开(公告)号：US20160379833A1
公开(公告)日：2016-12-29
申请号：US14753735
申请日：2015-06-29
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
Inventor： Shih-Ping HONG , Yu-Cheng LIU
IPC: H01L21/3065 , B08B7/00 , B08B9/08 , H01L21/02 , H01L21/32
CPC classification number: H01L21/02071 , B08B7/0035 , B08B9/0865 , C23C16/4405 , H01J37/3244 , H01J37/32834 , H01J37/32853 , H01J37/32862 , H01J37/32871 , H01J2237/334 , H01J2237/335 , H01L21/02041 , H01L21/0206 , H01L21/02063 , H01L21/02334 , H01L21/3065 , H01L21/31116 , H01L21/31122 , H01L21/32136 , H01L21/67069 , H01L21/76802 , H01L21/76814
Abstract: A method for cleaning a plasma processing chamber is provided. The method includes introducing an organic gas into a plasma processing chamber. The organic gas includes an organic compound including carbon and hydrogen. The method includes generating an organic plasma by exciting the organic gas. The organic plasma reacts with metal compound residues over an interior surface of the plasma processing chamber to volatilize the metal compound residues into a gaseous metal compound. The method includes removing the gaseous metal compound from the plasma processing chamber.
Abstract translation: 提供了一种用于清洁等离子体处理室的方法。 该方法包括将有机气体引入等离子体处理室。 有机气体包括碳和氢的有机化合物。 该方法包括通过激发有机气体产生有机等离子体。 有机血浆与等离子体处理室的内表面上的金属化合物残留物反应，使金属化合物残留物挥发成气态金属化合物。 该方法包括从等离子体处理室中除去气态金属化合物。
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公开(公告)号：US20160216100A1
公开(公告)日：2016-07-28
申请号：US14799810
申请日：2015-07-15
Applicant: Samsung Display Co., Ltd.
Inventor： Jihun Kim , Dongil Kim
CPC classification number: G01B7/085 , C23C14/545 , C23C16/50 , C23C16/52 , H01J37/32477 , H01J37/32853 , H01J37/32871 , H01J37/32917 , H01J37/32935
Abstract: An apparatus for measuring contamination of a plasma generating includes: a chamber; a susceptor provided in the chamber and on which a substrate is mounted; a plasma generator configured to generate plasma in the chamber; an inner jacket provided in the chamber and surrounding a space where the plasma is generated; a V-I probe electrically connected to the inner jacket and configured to detect a phase difference between a voltage and a current; a power supply unit configured to supply the voltage to the inner jacket through a blocking capacitor; and a monitor connected to the V-I probe and configured to store and display measurement data. A thickness of a contamination layer on a surface of the inner jacket is determined by analyzing a signal obtained by supplying the voltage to the inner jacket.
Abstract translation: 用于测量等离子体产生污染的装置包括：腔室; 设置在所述室中并且其上安装有基板的感受体; 等离子体发生器，其被配置为在所述室中产生等离子体; 设置在腔室中并围绕产生等离子体的空间的内护套; 电连接到所述内护套并被配置为检测电压和电流之间的相位差的V-I探头; 电源单元，被配置为通过隔离电容器将电压提供给所述内护套; 以及连接到V-I探头并被配置为存储和显示测量数据的监视器。 通过分析通过向内套提供电压获得的信号来确定内套表面上的污染层的厚度。
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