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11.发明授权公开(公告)号：US09231496B2
公开(公告)日：2016-01-05
申请号：US14369341
申请日：2013-01-18
Applicant: KONINKLIJKE PHILIPS N.V.
Inventor： Peter Dirksen , Ruediger Mauczok , Koray Karakaya , Johan Hendrik Klootwijk , Bout Marcelis , Marcel Mulder
CPC classification number: H02N1/006 , B06B1/0292 , B81B3/00 , B81B2203/0127 , B81C1/00158 , B81C1/00373 , H02N1/08
Abstract: The present invention relates to a method of manufacturing a capacitive micro-machined transducer (100), in particular a CMUT, the method comprising depositing a first electrode layer (10) on a substrate (1), depositing a first dielectric film (20) on the first electrode layer (10), depositing a sacrificial layer (30) on the first dielectric film (20), the sacrificial layer (30) being removable for forming a cavity (35) of the transducer, depositing a second dielectric film (40) on the sacrificial layer (30), and depositing a second electrode layer (50) on the second dielectric film (40), wherein the first dielectric film (20) and/or the second dielectric film (40) comprises a first layer comprising an oxide, a second layer comprising a high-k material, and a third layer comprising an oxide, and wherein the depositing steps are performed by Atomic Layer Deposition. The present invention further relates to a capacitive micro-machined transducer (100), in particular a CMUT, manufactured by such method.
Abstract translation: 本发明涉及一种制造电容微加工的换能器（100），特别是CMUT的方法，该方法包括在衬底（1）上沉积第一电极层（10），沉积第一电介质膜（20） 在所述第一电极层（10）上，在所述第一介电膜（20）上沉积牺牲层（30），所述牺牲层（30）可去除以形成所述换能器的空腔（35），沉积第二电介质膜 40），并且在所述第二电介质膜（40）上沉积第二电极层（50），其中所述第一电介质膜（20）和/或所述第二电介质膜（40）包括第一层 包括氧化物，包含高k材料的第二层和包含氧化物的第三层，并且其中所述沉积步骤通过原子层沉积进行。 本发明还涉及通过这种方法制造的电容式微加工的换能器（100），特别是CMUT。
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12.发明申请公开(公告)号：US20150294663A1
公开(公告)日：2015-10-15
申请号：US14443159
申请日：2013-11-06
Applicant: KONINKLIJKE PHILIPS N.V.
Inventor： Johan Hendrik Klootwijk , Marcel Mulder , Nico Maris Adriaan De Wild , Koray Karakaya , Cornelius Antonius Van Den Huevel
IPC: G10K11/18 , C23C16/56 , C23C16/455
CPC classification number: G10K11/18 , B06B1/0292 , C23C16/45525 , C23C16/56
Abstract: The present invention relates to a method of manufacturing a capacitive micro-machined transducer (100), in particular a CMUT, the method comprising depositing a first electrode layer (10) on a substrate (1), depositing a first dielectric film (20) on the first electrode layer (10), depositing a sacrificial layer (30) on the first dielectric film (20), the sacrificial layer (30) being removable for forming a cavity (35) of the transducer, depositing a second dielectric film (40) on the sacrificial layer (30), depositing a second electrode layer (50) on the second dielectric film (40), and patterning at least one of the deposited layers and films (10, 20, 30, 40, 50), wherein the depositing steps are performed by Atomic Layer Deposition. The present invention further relates to a capacitive micro-machined transducer (100), in particular a CMUT, manufactured by such method.
Abstract translation: 本发明涉及一种制造电容微加工的换能器（100），特别是CMUT的方法，该方法包括在衬底（1）上沉积第一电极层（10），沉积第一电介质膜（20） 在所述第一电极层（10）上，在所述第一介电膜（20）上沉积牺牲层（30），所述牺牲层（30）可去除以形成所述换能器的空腔（35），沉积第二电介质膜 在所述牺牲层（30）上，在所述第二电介质膜（40）上沉积第二电极层（50），并且对所述沉积层和膜（10,20,30,40,50）中的至少一个进行构图， 其中沉积步骤通过原子层沉积进行。 本发明还涉及通过这种方法制造的电容式微加工的换能器（100），特别是CMUT。
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13.发明申请公开(公告)号：US20140375168A1
公开(公告)日：2014-12-25
申请号：US14369341
申请日：2013-01-18
Applicant: KONINKLIJKE PHILIPS N.V.
Inventor： Peter Dirksen , Ruediger Mauczok , Koray Karakaya , Johan Hendrik KlooTwijk , Bout Marcelis , Marcel Mulder
CPC classification number: H02N1/006 , B06B1/0292 , B81B3/00 , B81B2203/0127 , B81C1/00158 , B81C1/00373 , H02N1/08
Abstract: The present invention relates to a method of manufacturing a capacitive micro-machined transducer (100), in particular a CMUT, the method comprising depositing a first electrode layer (10) on a substrate (1), depositing a first dielectric film (20) on the first electrode layer (10), depositing a sacrificial layer (30) on the first dielectric film (20), the sacrificial layer (30) being removable for forming a cavity (35) of the transducer, depositing a second dielectric film (40) on the sacrificial layer (30), and depositing a second electrode layer (50) on the second dielectric film (40), wherein the first dielectric film (20) and/or the second dielectric film (40) comprises a first layer comprising an oxide, a second layer comprising a high-k material, and a third layer comprising an oxide, and wherein the depositing steps are performed by Atomic Layer Deposition. The present invention further relates to a capacitive micro-machined transducer (100), in particular a CMUT, manufactured by such method.
Abstract translation: 本发明涉及一种制造电容微加工的换能器（100），特别是CMUT的方法，该方法包括在衬底（1）上沉积第一电极层（10），沉积第一电介质膜（20） 在所述第一电极层（10）上，在所述第一介电膜（20）上沉积牺牲层（30），所述牺牲层（30）可去除以形成所述换能器的空腔（35），沉积第二电介质膜 40），并且在所述第二电介质膜（40）上沉积第二电极层（50），其中所述第一电介质膜（20）和/或所述第二电介质膜（40）包括第一层 包括氧化物，包含高k材料的第二层和包含氧化物的第三层，并且其中所述沉积步骤通过原子层沉积进行。 本发明还涉及通过这种方法制造的电容式微加工的换能器（100），特别是CMUT。
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Patent Agency Ranking
14.发明授权公开(公告)号：US11596761B2
公开(公告)日：2023-03-07
申请号：US16623428
申请日：2018-06-20
Applicant: KONINKLIJKE PHILIPS N.V.
Inventor： Rainer Hilbig , Pascal De Graaf , Marcel Mulder , Achim Gerhard Rolf Koerber
Abstract: The present invention provides a system (10) for humidification of a pressurized flow of breathable gas delivered to a patient, the system comprising; a ventilator (12) for generating a pressurized flow of breathable gas; a patient circuit (14) in fluid communication with the ventilator and connectable to the respiratory system of a patient; and an aerosol generator (18). The patient circuit defines an internal space (26) for transporting the flow of breathable gas which internal space accommodates the outflow opening (20) of the aerosol generator. This enables to prevent so-called rainout and a relatively light weight portable system. The invention also relates to an insert (30) that is connectable to the patient circuit and that accommodates the aerosol generator.
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公开(公告)号：US20180029077A1
公开(公告)日：2018-02-01
申请号：US15729699
申请日：2017-10-11
Applicant: KONINKLIJKE PHILIPS N.V.
Inventor： Ronald Dekker , Bout Marcelis , Marcel Mulder , Ruediger Mauczok
IPC: B06B1/02
CPC classification number: B06B1/0292 , Y10T29/49005
Abstract: The present invention relates to an ultrasound transducer device comprising at least one cMUT cell (30) for transmitting and/or receiving ultrasound waves, the cMUT cell (30) comprising a cell membrane (30a) and a cavity (30b) underneath the cell membrane. The device further comprises a substrate (10) having a first side (10a) and a second side (10b), the at least one cMUT cell (30) arranged on the first side (10a) of the substrate (10). The substrate (10) comprises a substrate base layer (12) and a plurality of adjacent trenches (17a) extending into the substrate (10) in a direction orthogonal to the substrate sides (10a, 10b), wherein spacers (12a) are each formed between adjacent trenches (17a). The substrate (10) further comprises a connecting cavity (17b) which connects the trenches (17a) and which extends in a direction parallel to the substrate sides (10a, 10b), the trenches (17a) and the connecting cavity (17b) together forming a substrate cavity (17) in the substrate (10). The substrate (10) further comprises a substrate membrane (23) covering the substrate cavity (17). The substrate cavity (17) is located in a region of the substrate (10) underneath the cMUT cell (30). The present invention further relates to a method of manufacturing such ultrasound transducer device.
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公开(公告)号：US09539854B2
公开(公告)日：2017-01-10
申请号：US14623595
申请日：2015-02-17
Applicant: KONINKLIJKE PHILIPS N.V.
Inventor： Johan H. Klootwijk , Peter Dirksen , Marcel Mulder , Elisabeth M. L. Moonen
CPC classification number: B60B1/0292 , B06B1/0292 , H02N1/006 , H02N1/08 , Y10T29/49005
Abstract: The patent application discloses a capacitive micromachined ultrasound transducer, comprising a silicon substrate; a cavity; a first electrode, which is arranged between the silicon substrate and the cavity; wherein the first electrode is arranged under the cavity; a membrane, wherein the membrane is arranged above the cavity and opposite to the first electrode; a second electrode, wherein the second electrode is arranged above the cavity and opposite to the first electrode; wherein the second electrode is arranged in or close to the membrane, wherein the first electrode and the second electrode are adapted to be supplied by a voltage; and a first isolation layer, which is arranged between the first electrode and the second electrode, wherein the first isolation layer comprises a dielectric. It is also described a system for generating or detecting ultrasound waves, wherein the system comprises a transducer according to the patent application. Further, it is disclosed a method for manufacturing a transducer according to the patent application, wherein the transducer is manufactured with the help of a CMOS manufacturing process, wherein the transducer can be manufactured as a post-processing feature during a CMOS process.
Abstract translation: 该专利申请公开了一种电容式微机械超声换能器，其包括硅衬底; 一个空腔 布置在硅衬底和腔之间的第一电极; 其中所述第一电极布置在所述空腔下方; 膜，其中所述膜布置在所述腔的上方并与所述第一电极相对; 第二电极，其中所述第二电极布置在所述空腔上方并与所述第一电极相对; 其中所述第二电极布置在所述膜中或靠近所述膜，其中所述第一电极和所述第二电极适于由电压供应; 以及布置在所述第一电极和所述第二电极之间的第一隔离层，其中所述第一隔离层包括电介质。 还描述了用于产生或检测超声波的系统，其中该系统包括根据该专利申请的换能器。 此外，公开了根据专利申请的用于制造换能器的方法，其中借助于CMOS制造工艺制造所述换能器，其中所述换能器可以在CMOS工艺期间被制造为后处理特征。
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17.发明申请公开(公告)号：US20140332911A1
公开(公告)日：2014-11-13
申请号：US14370110
申请日：2013-01-23
Applicant: KONINKLIJKE PHILIPS N.V.
Inventor： Peter Dirksen , Ruediger Mauczok , Koray Karakaya , Johan Klootwijk , Bout Marcelis , Marcel Mulder
CPC classification number: B81B3/0086 , B06B1/0292 , B81B3/0027 , B81B2201/0271 , B81C1/00523 , H04R19/005 , H04R31/00 , H04R31/003
Abstract: The present invention relates to a method of manufacturing a capacitive micro- machined transducer (100), in particular a CMUT, the method comprising depositing a first electrode layer (10) on a substrate (1), depositing a first dielectric film (20) on the first electrode layer (10), depositing a sacrificial layer (30) on the first dielectric film (20), the sacrificial layer (30) being removable for forming a cavity (35) of the transducer, depositing a second dielectric film (40) on the sacrificial layer (30), depositing a second electrode layer (50) on the second dielectric film (40), and patterning at least one of the deposited layers and films (10, 20, 30, 40, 50), wherein the depositing steps are performed by Atomic Layer Deposition. The present invention further relates to a capacitive micro-machined transducer (100), in particular a CMUT, manufactured by such method.
Abstract translation: 本发明涉及一种制造电容式微机械传感器（100），特别是CMUT的方法，该方法包括在基片（1）上沉积第一电极层（10），沉积第一介电膜（20） 在所述第一电极层（10）上，在所述第一介电膜（20）上沉积牺牲层（30），所述牺牲层（30）可去除以形成所述换能器的空腔（35），沉积第二电介质膜 在所述牺牲层（30）上，在所述第二电介质膜（40）上沉积第二电极层（50），并且对所述沉积层和膜（10,20,30,40,50）中的至少一个进行构图， 其中沉积步骤通过原子层沉积进行。 本发明还涉及通过这种方法制造的电容式微加工的换能器（100），特别是CMUT。
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公开(公告)号：US20140307528A1
公开(公告)日：2014-10-16
申请号：US14365647
申请日：2012-12-13
Applicant: KONINKLIJKE PHILIPS N.V.
Inventor： Ronald Dekker , Bout Marcelis , Marcel Mulder , Ruediger Mauczok
IPC: B06B1/02
CPC classification number: B06B1/0292 , Y10T29/49005
Abstract: The present invention relates to an ultrasound transducer device comprising at least one cMUT cell (30) for transmitting and/or receiving ultrasound waves, the cMUT cell (30) comprising a cell membrane (30a) and a cavity (30b) underneath the cell membrane. The device further comprises a substrate (10) having a first side (10a) and a second side (10b), the at least one cMUT cell (30) arranged on the first side (10a) of the substrate (10). The substrate (10) comprises a substrate base layer (12) and a plurality of adjacent trenches (17a) extending into the substrate (10) in a direction orthogonal to the substratesides (10a, 10b), wherein spacers (12a) are each formed between adjacent trenches (17a). The substrate (10) further comprises a connecting cavity (17b) which connects the trenches (17a) and which extends in a direction parallel to the substrate sides (10a, 10b), the trenches (17a) and the connecting cavity (17b) together forming a substrate cavity (17) in the substrate (10). The substrate (10) further comprises a substrate membrane (23) covering the substrate cavity (17). The substrate cavity (17) is located in a region of the substrate (10) underneath the cMUT cell (30). The present invention further relates to a method of manufacturing such ultrasound transducer device.
Abstract translation: 本发明涉及一种包括至少一个用于传送和/或接收超声波的cMUT单元（30）的超声换能器装置，所述cMUT单元（30）包括细胞膜（30a）和细胞膜下方的空腔（30b） 。 所述装置还包括具有第一侧面（10a）和第二侧面（10b）的基底（10），所述至少一个cMUT单元（30）布置在所述基底（10）的第一侧面（10a）上。 衬底（10）包括在垂直于衬底（10a，10b）的方向上延伸到衬底（10）中的衬底基底层（12）和多个相邻的沟槽（17a），其中每个形成间隔物（12a） 在相邻的沟槽（17a）之间。 衬底（10）还包括连接凹槽（17a）的连接腔（17b），并且在与基底侧面（10a，10b），沟槽（17a）和连接腔（17b）平行的方向上延伸 在衬底（10）中形成衬底腔（17）。 衬底（10）还包括覆盖衬底腔（17）的衬底膜（23）。 衬底空腔（17）位于cMUT电池（30）下方的衬底（10）的区域中。 本发明还涉及制造这种超声波换能器装置的方法。
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