公开(公告)号：US10293375B2

公开(公告)日：2019-05-21

申请号：US15021962

申请日：2014-09-15

Applicant: KONINKLIJKE PHILIPS N.V.

Inventor： Peter Dirksen ,  Marcel Mulder ,  Adriaan Leeuwestein

IPC: B06B1/02 ,  H02N1/08 ,  B81B3/00 ,  B81C1/00 ,  H02N1/00

Abstract: Disclosed is a method of manufacturing a capacitive micro-machined ultrasonic transducer (CMUT) device comprising a first electrode (112) on a substrate (110) and a second electrode (122) embedded in an electrically insulating membrane, the first electrode and the membrane being separated by a cavity (130) formed by the removal of a sacrificial material (116) in between the first electrode and the membrane, the method comprising forming a membrane portion (22) on the second electrode and a further membrane portion (24) extending from the membrane portion towards the substrate alongside the sacrificial material, wherein the respective thicknesses the membrane portion and the further membrane portion exceed the thickness of the sacrificial material prior to forming said cavity. A CMUT device manufactured in accordance with this method and an apparatus comprising such a CMUT device are also disclosed.

公开(公告)号：US10126263B2

公开(公告)日：2018-11-13

申请号：US14435592

申请日：2013-10-07

Applicant: KONINKLIJKE PHILIPS N.V.

Inventor： Johan Hendrik Klootwijk ,  Marcel Mulder

IPC: G01N27/00 ,  G01N27/414 ,  G01N33/00 ,  H01L29/06

Abstract: A device for detecting a concentration of a substance in a fluid sample includes a substrate; an insulating layer arranged on the substrate; and a plurality of individually electrically addressable semiconducting nanowires arranged on the insulating layer. Each one of the plurality of nanowires is covered by an insulating material and arranged for sensing of the substance through an electrical characteristic of the nanowire. The device further includes a sample compartment for providing the fluid sample in contact with each of the plurality of nanowires. For each of the plurality of nanowires, at least one of the cross sectional dimension, the insulator thickness and the type of insulating material is selected such that each of the nanowires has a different detection range, and such that the dynamic range of the device is higher than the dynamic range of each of the individual nanowires.

公开(公告)号：US10008958B2

公开(公告)日：2018-06-26

申请号：US14624945

申请日：2015-02-18

Applicant: KONINKLIJKE PHILIPS N.V.

Inventor： Peter Dirksen ,  Ruediger Mauczok ,  Koray Karakaya ,  Johan Hendrik Klootwijk ,  Bout Marcelis ,  Marcel Mulder

IPC: H02N11/00 ,  H02N1/00 ,  B06B1/02 ,  B81C1/00 ,  B81B3/00 ,  H02N1/08

CPC classification number: H02N1/006 ,  B06B1/0292 ,  B81B3/00 ,  B81B2203/0127 ,  B81C1/00158 ,  B81C1/00373 ,  H02N1/08

Abstract: The present invention relates to a method of manufacturing a capacitive micro-machined transducer (100), in particular a CMUT, the method comprising depositing a first electrode layer (10) on a substrate (1), depositing a first dielectric film (20) on the first electrode layer (10), depositing a sacrificial layer (30) on the first dielectric film (20), the sacrificial layer (30) being removable for forming a cavity (35) of the transducer, depositing a second dielectric film (40) on the sacrificial layer (30), and depositing a second electrode layer (50) on the second dielectric film (40), wherein the first dielectric film (20) and/or the second dielectric film (40) comprises a first layer comprising an oxide, a second layer comprising a high-k material, and a third layer comprising an oxide, and wherein the depositing steps are performed by Atomic Layer Deposition. The present invention further relates to a capacitive micro-machined transducer (100), in particular a CMUT, manufactured by such method.

公开(公告)号：US09230908B2

公开(公告)日：2016-01-05

申请号：US14346824

申请日：2012-10-12

Applicant: KONINKLIJKE PHILIPS N.V.

Inventor： Ronald Dekker ,  Marcelis Bout ,  Marcel Mulder ,  Ruediger Mauczok

IPC: H01L23/00 ,  H01L23/522 ,  H01L21/768 ,  H01L23/48 ,  B06B1/02 ,  H01L23/532

CPC classification number: H01L23/5226 ,  B06B1/0292 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/53271 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2924/1461 ,  H01L2924/014 ,  H01L2924/00

Abstract: The present invention relates to a through-wafer via device (10) comprising a wafer (12) made of a wafer material and having a first wafer surface (12a) and a second wafer surface (12b) opposing the first wafer surface (12a). The through-wafer via device (10) further comprises a plurality of side by side first trenches (14) provided with a conductive material and extending from the first wafer surface (12a) into the wafer (12) such that a plurality of spacers (16) of the wafer material are formed between the first trenches (14). The through-wafer via device (10) further comprises a second trench (18) provided with the conductive material and extending from the second wafer surface (12b) into the wafer (12), the second trench (18) being connected to the first trenches (14). The through-wafer via device (10) further comprises a conductive layer (20) made of the conductive material and formed on the side of the first wafer surface (12a), the conductive material filling the first trenches (14) such that the first conductive layer (20) has a substantially planar and closed surface.

Abstract translation: 本发明涉及包括由晶片材料制成并具有与第一晶片表面（12a）相对的第一晶片表面（12a）和第二晶片表面（12b）的晶片（12）的贯通晶片通孔装置（10） 。 贯通晶片通孔装置（10）还包括设置有导电材料并从第一晶片表面（12a）延伸到晶片（12）中的多个并排的第一沟槽（14），使得多个间隔件 在第一沟槽（14）之间形成晶片材料。 贯通晶片通孔装置（10）还包括设置有导电材料并从第二晶片表面（12b）延伸到晶片（12）中的第二沟槽（18），第二沟槽（18）连接到第一 沟槽（14）。 贯通晶片通孔装置（10）还包括由导电材料制成并形成在第一晶片表面（12a）一侧上的导电层（20），该导电材料填充第一沟槽（14），使得第一 导电层（20）具有基本平坦和闭合的表面。

公开(公告)号：US10327333B2

公开(公告)日：2019-06-18

申请号：US14374635

申请日：2013-02-20

Applicant: KONINKLIJKE PHILIPS N.V.

Inventor： Ronald Dekker ,  Vincent Adrianus Henneken ,  Marcel Mulder

IPC: H05K1/11 ,  A61B18/00 ,  A61B1/00 ,  H01L21/768 ,  H01L23/48 ,  H01L23/00 ,  A61B1/05 ,  A61B8/12 ,  A61B18/14 ,  A61N1/36 ,  H05K1/18 ,  H05K3/00 ,  H05K3/32 ,  H01L29/06

Abstract: The present invention relates to an electronic circuit arrangement (10) comprising: a substrate (12) having a first surface (12a) and a second surface (12b), an electronic circuit, an electrical connection part (16) for providing an electrical connection to the electronic circuit and being arranged on the first surface (12a), and at least one electrical wire (18). The electrical wire (18) comprises at least one conductive core (20) and an isolation (22) surrounding the conductive core (20). An end portion (18a) of the electrical wire (18) is an isolation-free portion for allowing access to the conductive core (20), wherein the end portion (18a) of the electrical wire (18) is connected to the electrical connection part (16). At least one through-hole (24) extending from the first surface (12a) to the second surface (12b) is provided in the substrate (12), wherein the electrical wire (18) is arranged through the through-hole (24).

公开(公告)号：US09828236B2

公开(公告)日：2017-11-28

申请号：US14370110

申请日：2013-01-23

Applicant: KONINKLIJKE PHILIPS N.V.

Inventor： Peter Dirksen ,  Ruediger Mauczok ,  Koray Karakaya ,  Johan Klootwijk ,  Bout Marcelis ,  Marcel Mulder

IPC: H01L29/84 ,  B81B3/00 ,  B06B1/02 ,  B81C1/00 ,  H04R19/00 ,  H04R31/00

CPC classification number: B81B3/0086 ,  B06B1/0292 ,  B81B3/0027 ,  B81B2201/0271 ,  B81C1/00523 ,  H04R19/005 ,  H04R31/00 ,  H04R31/003

Abstract: The present invention relates to a method of manufacturing a capacitive micro- machined transducer (100), in particular a CMUT, the method comprising depositing a first electrode layer (10) on a substrate (1), depositing a first dielectric film (20) on the first electrode layer (10), depositing a sacrificial layer (30) on the first dielectric film (20), the sacrificial layer (30) being removable for forming a cavity (35) of the transducer, depositing a second dielectric film (40) on the sacrificial layer (30), depositing a second electrode layer (50) on the second dielectric film (40), and patterning at least one of the deposited layers and films (10, 20, 30, 40, 50), wherein the depositing steps are performed by Atomic Layer Deposition. The present invention further relates to a capacitive micro-machined transducer (100), in particular a CMUT, manufactured by such method.

公开(公告)号：US20140371744A1

公开(公告)日：2014-12-18

申请号：US14374635

申请日：2013-02-20

Applicant: KONINKLIJKE PHILIPS N.V.

Inventor： Ronald Dekker ,  Vincent Adrianus Henneken ,  Marcel Mulder

IPC: H05K1/11 ,  H05K3/00 ,  A61N1/36 ,  H05K3/32 ,  H05K1/18 ,  A61B18/14

CPC classification number: H05K1/115 ,  A61B1/0008 ,  A61B1/051 ,  A61B8/12 ,  A61B18/1492 ,  A61B2018/00577 ,  A61B2018/00714 ,  A61B2018/00791 ,  A61N1/36135 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/03 ,  H01L24/05 ,  H01L24/46 ,  H01L24/48 ,  H01L24/72 ,  H01L24/85 ,  H01L29/0657 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05166 ,  H01L2224/05555 ,  H01L2224/0557 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/13101 ,  H01L2224/16145 ,  H01L2224/45565 ,  H01L2224/4824 ,  H01L2224/4847 ,  H01L2224/85205 ,  H01L2224/85365 ,  H01L2224/85801 ,  H01L2224/85815 ,  H01L2924/00014 ,  H01L2924/10155 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/181 ,  H05K1/18 ,  H05K3/0094 ,  H05K3/32 ,  Y10T29/49169 ,  H01L2924/014 ,  H01L2224/45099 ,  H01L2224/45599 ,  H01L2924/00

Abstract: The present invention relates to an electronic circuit arrangement (10) comprising: a substrate (12) having a first surface (12a) and a second surface (12b), an electronic circuit, an electrical connection part (16) for providing an electrical connection to the electronic circuit and being arranged on the first surface (12a), and at least one electrical wire (18). The electrical wire (18) comprises at least one conductive core (20) and an isolation (22) surrounding the conductive core (20). An end portion (18a) of the electrical wire (18) is an isolation-free portion for allowing access to the conductive core (20), wherein the end portion (18a) of the electrical wire (18) is connected to the electrical connection part (16). At least one through-hole (24) extending from the first surface (12a) to the second surface (12b) is provided in the substrate (12), wherein the electrical wire (18) is arranged through the through-hole (24).

Abstract translation: 电子电路装置技术领域本发明涉及一种电子电路装置（10），包括：具有第一表面（12a）和第二表面（12b）的基板（12），电子电路，电连接部分（16），用于提供电连接 并且布置在所述第一表面（12a）上，并且至少一个电线（18）。 电线（18）包括至少一个导电芯（20）和围绕导电芯（20）的隔离（22）。 电线（18）的端部（18a）是用于允许接触导电芯（20）的无隔离部分，其中电线（18）的端部（18a）连接到电连接 部分（16）。 在基板（12）中设置有从第一表面（12a）延伸到第二表面（12b）的至少一个通孔（24），其中电线（18）穿过通孔（24）布置， 。

公开(公告)号：US20140293751A1

公开(公告)日：2014-10-02

申请号：US14346824

申请日：2012-10-12

Applicant: KONINKLIJKE PHILIPS N.V.

Inventor： Ronald Dekker ,  Marcelis Bout ,  Marcel Mulder ,  Ruediger Mauczok

IPC: H01L23/522 ,  H01L21/768 ,  B06B1/02 ,  H01L23/532

CPC classification number: H01L23/5226 ,  B06B1/0292 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/53271 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2924/1461 ,  H01L2924/014 ,  H01L2924/00

Abstract: The present invention relates to a through-wafer via device (10) comprising a wafer (12) made of a wafer material and having a first wafer surface (12a) and a second wafer surface (12b) opposing the first wafer surface (12a). The through-wafer via device (10) further comprises a plurality of side by side first trenches (14) provided with a conductive material and extending from the first wafer surface (12a) into the wafer (12) such that a plurality of spacers (16) of the wafer material are formed between the first trenches (14). The through-wafer via device (10) further comprises a second trench (18) provided with the conductive material and extending from the second wafer surface (12b) into the wafer (12), the second trench (18) being connected to the first trenches (14). The through-wafer via device (10) further comprises a conductive layer (20) made of the conductive material and formed on the side of the first wafer surface (12a), the conductive material filling the first trenches (14) such that the first conductive layer (20) has a substantially planar and closed surface.

Abstract translation: 本发明涉及包括由晶片材料制成并具有与第一晶片表面（12a）相对的第一晶片表面（12a）和第二晶片表面（12b）的晶片（12）的贯通晶片通孔装置（10） 。 贯通晶片通孔装置（10）还包括设置有导电材料并从第一晶片表面（12a）延伸到晶片（12）中的多个并排的第一沟槽（14），使得多个间隔件 在第一沟槽（14）之间形成晶片材料。 贯通晶片通孔装置（10）还包括设置有导电材料并从第二晶片表面（12b）延伸到晶片（12）中的第二沟槽（18），第二沟槽（18）连接到第一 沟槽（14）。 贯通晶片通孔装置（10）还包括由导电材料制成并形成在第一晶片表面（12a）一侧上的导电层（20），该导电材料填充第一沟槽（14），使得第一 导电层（20）具有基本平坦和闭合的表面。

公开(公告)号：US09802224B2

公开(公告)日：2017-10-31

申请号：US14365647

申请日：2012-12-13

Applicant: KONINKLIJKE PHILIPS N.V.

Inventor： Ronald Dekker ,  Bout Marcelis ,  Marcel Mulder ,  Ruediger Mauczok

IPC: B06B1/00 ,  B06B1/02

CPC classification number: B06B1/0292 ,  Y10T29/49005

Abstract: The present invention relates to an ultrasound transducer device comprising at least one cMUT cell (30) for transmitting and/or receiving ultrasound waves, the cMUT cell (30) comprising a cell membrane (30a) and a cavity (30b) underneath the cell membrane. The device further comprises a substrate (10) having a first side (10a) and a second side (10b), the at least one cMUT cell (30) arranged on the first side (10a) of the substrate (10). The substrate (10) comprises a substrate base layer (12) and a plurality of adjacent trenches (17a) extending into the substrate (10) in a direction orthogonal to the substratesides (10a, 10b), wherein spacers (12a) are each formed between adjacent trenches (17a). The substrate (10) further comprises a connecting cavity (17b) which connects the trenches (17a) and which extends in a direction parallel to the substrate sides (10a, 10b), the trenches (17a) and the connecting cavity (17b) together forming a substrate cavity (17) in the substrate (10). The substrate (10) further comprises a substrate membrane (23) covering the substrate cavity (17). The substrate cavity (17) is located in a region of the substrate (10) underneath the cMUT cell (30). The present invention further relates to a method of manufacturing such ultrasound transducer device.

公开(公告)号：US09607606B2

公开(公告)日：2017-03-28

申请号：US14443159

申请日：2013-11-06

Applicant: KONINKLIJKE PHILIPS N.V.

Inventor： Johan Hendrik Klootwijk ,  Marcel Mulder ,  Nico Maris Adriaan De Wild ,  Koray Karakaya ,  Cornelius Antonius Van Den Huevel

IPC: H01L21/02 ,  G10K11/18 ,  B06B1/02 ,  C23C16/455 ,  C23C16/56

CPC classification number: G10K11/18 ,  B06B1/0292 ,  C23C16/45525 ,  C23C16/56

Abstract: The present invention relates to a method of manufacturing a capacitive micro-machined transducer (100), in particular a CMUT, the method comprising depositing a first electrode layer (10) on a substrate (1), depositing a first dielectric film (20) on the first electrode layer (10), depositing a sacrificial layer (30) on the first dielectric film (20), the sacrificial layer (30) being removable for forming a cavity (35) of the transducer, depositing a second dielectric film (40) on the sacrificial layer (30), depositing a second electrode layer (50) on the second dielectric film (40), and patterning at least one of the deposited layers and films (10, 20, 30, 40, 50), wherein the depositing steps are performed by Atomic Layer Deposition. The present invention further relates to a capacitive micro-machined transducer (100), in particular a CMUT, manufactured by such method.