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公开(公告)号：US09828236B2
公开(公告)日：2017-11-28
申请号：US14370110
申请日：2013-01-23
Applicant: KONINKLIJKE PHILIPS N.V.
Inventor： Peter Dirksen , Ruediger Mauczok , Koray Karakaya , Johan Klootwijk , Bout Marcelis , Marcel Mulder
CPC classification number: B81B3/0086 , B06B1/0292 , B81B3/0027 , B81B2201/0271 , B81C1/00523 , H04R19/005 , H04R31/00 , H04R31/003
Abstract: The present invention relates to a method of manufacturing a capacitive micro- machined transducer (100), in particular a CMUT, the method comprising depositing a first electrode layer (10) on a substrate (1), depositing a first dielectric film (20) on the first electrode layer (10), depositing a sacrificial layer (30) on the first dielectric film (20), the sacrificial layer (30) being removable for forming a cavity (35) of the transducer, depositing a second dielectric film (40) on the sacrificial layer (30), depositing a second electrode layer (50) on the second dielectric film (40), and patterning at least one of the deposited layers and films (10, 20, 30, 40, 50), wherein the depositing steps are performed by Atomic Layer Deposition. The present invention further relates to a capacitive micro-machined transducer (100), in particular a CMUT, manufactured by such method.
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公开(公告)号：US20140293751A1
公开(公告)日：2014-10-02
申请号：US14346824
申请日：2012-10-12
Applicant: KONINKLIJKE PHILIPS N.V.
Inventor： Ronald Dekker , Marcelis Bout , Marcel Mulder , Ruediger Mauczok
IPC: H01L23/522 , H01L21/768 , B06B1/02 , H01L23/532
CPC classification number: H01L23/5226 , B06B1/0292 , H01L21/76898 , H01L23/481 , H01L23/53271 , H01L2224/02372 , H01L2224/0401 , H01L2224/05548 , H01L2224/13024 , H01L2224/131 , H01L2224/16145 , H01L2924/1461 , H01L2924/014 , H01L2924/00
Abstract: The present invention relates to a through-wafer via device (10) comprising a wafer (12) made of a wafer material and having a first wafer surface (12a) and a second wafer surface (12b) opposing the first wafer surface (12a). The through-wafer via device (10) further comprises a plurality of side by side first trenches (14) provided with a conductive material and extending from the first wafer surface (12a) into the wafer (12) such that a plurality of spacers (16) of the wafer material are formed between the first trenches (14). The through-wafer via device (10) further comprises a second trench (18) provided with the conductive material and extending from the second wafer surface (12b) into the wafer (12), the second trench (18) being connected to the first trenches (14). The through-wafer via device (10) further comprises a conductive layer (20) made of the conductive material and formed on the side of the first wafer surface (12a), the conductive material filling the first trenches (14) such that the first conductive layer (20) has a substantially planar and closed surface.
Abstract translation: 本发明涉及包括由晶片材料制成并具有与第一晶片表面（12a）相对的第一晶片表面（12a）和第二晶片表面（12b）的晶片（12）的贯通晶片通孔装置（10） 。 贯通晶片通孔装置（10）还包括设置有导电材料并从第一晶片表面（12a）延伸到晶片（12）中的多个并排的第一沟槽（14），使得多个间隔件 在第一沟槽（14）之间形成晶片材料。 贯通晶片通孔装置（10）还包括设置有导电材料并从第二晶片表面（12b）延伸到晶片（12）中的第二沟槽（18），第二沟槽（18）连接到第一 沟槽（14）。 贯通晶片通孔装置（10）还包括由导电材料制成并形成在第一晶片表面（12a）一侧上的导电层（20），该导电材料填充第一沟槽（14），使得第一 导电层（20）具有基本平坦和闭合的表面。
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公开(公告)号：US20180029077A1
公开(公告)日：2018-02-01
申请号：US15729699
申请日：2017-10-11
Applicant: KONINKLIJKE PHILIPS N.V.
Inventor： Ronald Dekker , Bout Marcelis , Marcel Mulder , Ruediger Mauczok
IPC: B06B1/02
CPC classification number: B06B1/0292 , Y10T29/49005
Abstract: The present invention relates to an ultrasound transducer device comprising at least one cMUT cell (30) for transmitting and/or receiving ultrasound waves, the cMUT cell (30) comprising a cell membrane (30a) and a cavity (30b) underneath the cell membrane. The device further comprises a substrate (10) having a first side (10a) and a second side (10b), the at least one cMUT cell (30) arranged on the first side (10a) of the substrate (10). The substrate (10) comprises a substrate base layer (12) and a plurality of adjacent trenches (17a) extending into the substrate (10) in a direction orthogonal to the substrate sides (10a, 10b), wherein spacers (12a) are each formed between adjacent trenches (17a). The substrate (10) further comprises a connecting cavity (17b) which connects the trenches (17a) and which extends in a direction parallel to the substrate sides (10a, 10b), the trenches (17a) and the connecting cavity (17b) together forming a substrate cavity (17) in the substrate (10). The substrate (10) further comprises a substrate membrane (23) covering the substrate cavity (17). The substrate cavity (17) is located in a region of the substrate (10) underneath the cMUT cell (30). The present invention further relates to a method of manufacturing such ultrasound transducer device.
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4.发明申请公开(公告)号：US20140332911A1
公开(公告)日：2014-11-13
申请号：US14370110
申请日：2013-01-23
Applicant: KONINKLIJKE PHILIPS N.V.
Inventor： Peter Dirksen , Ruediger Mauczok , Koray Karakaya , Johan Klootwijk , Bout Marcelis , Marcel Mulder
CPC classification number: B81B3/0086 , B06B1/0292 , B81B3/0027 , B81B2201/0271 , B81C1/00523 , H04R19/005 , H04R31/00 , H04R31/003
Abstract: The present invention relates to a method of manufacturing a capacitive micro- machined transducer (100), in particular a CMUT, the method comprising depositing a first electrode layer (10) on a substrate (1), depositing a first dielectric film (20) on the first electrode layer (10), depositing a sacrificial layer (30) on the first dielectric film (20), the sacrificial layer (30) being removable for forming a cavity (35) of the transducer, depositing a second dielectric film (40) on the sacrificial layer (30), depositing a second electrode layer (50) on the second dielectric film (40), and patterning at least one of the deposited layers and films (10, 20, 30, 40, 50), wherein the depositing steps are performed by Atomic Layer Deposition. The present invention further relates to a capacitive micro-machined transducer (100), in particular a CMUT, manufactured by such method.
Abstract translation: 本发明涉及一种制造电容式微机械传感器（100），特别是CMUT的方法，该方法包括在基片（1）上沉积第一电极层（10），沉积第一介电膜（20） 在所述第一电极层（10）上，在所述第一介电膜（20）上沉积牺牲层（30），所述牺牲层（30）可去除以形成所述换能器的空腔（35），沉积第二电介质膜 在所述牺牲层（30）上，在所述第二电介质膜（40）上沉积第二电极层（50），并且对所述沉积层和膜（10,20,30,40,50）中的至少一个进行构图， 其中沉积步骤通过原子层沉积进行。 本发明还涉及通过这种方法制造的电容式微加工的换能器（100），特别是CMUT。
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公开(公告)号：US20140307528A1
公开(公告)日：2014-10-16
申请号：US14365647
申请日：2012-12-13
Applicant: KONINKLIJKE PHILIPS N.V.
Inventor： Ronald Dekker , Bout Marcelis , Marcel Mulder , Ruediger Mauczok
IPC: B06B1/02
CPC classification number: B06B1/0292 , Y10T29/49005
Abstract: The present invention relates to an ultrasound transducer device comprising at least one cMUT cell (30) for transmitting and/or receiving ultrasound waves, the cMUT cell (30) comprising a cell membrane (30a) and a cavity (30b) underneath the cell membrane. The device further comprises a substrate (10) having a first side (10a) and a second side (10b), the at least one cMUT cell (30) arranged on the first side (10a) of the substrate (10). The substrate (10) comprises a substrate base layer (12) and a plurality of adjacent trenches (17a) extending into the substrate (10) in a direction orthogonal to the substratesides (10a, 10b), wherein spacers (12a) are each formed between adjacent trenches (17a). The substrate (10) further comprises a connecting cavity (17b) which connects the trenches (17a) and which extends in a direction parallel to the substrate sides (10a, 10b), the trenches (17a) and the connecting cavity (17b) together forming a substrate cavity (17) in the substrate (10). The substrate (10) further comprises a substrate membrane (23) covering the substrate cavity (17). The substrate cavity (17) is located in a region of the substrate (10) underneath the cMUT cell (30). The present invention further relates to a method of manufacturing such ultrasound transducer device.
Abstract translation: 本发明涉及一种包括至少一个用于传送和/或接收超声波的cMUT单元（30）的超声换能器装置，所述cMUT单元（30）包括细胞膜（30a）和细胞膜下方的空腔（30b） 。 所述装置还包括具有第一侧面（10a）和第二侧面（10b）的基底（10），所述至少一个cMUT单元（30）布置在所述基底（10）的第一侧面（10a）上。 衬底（10）包括在垂直于衬底（10a，10b）的方向上延伸到衬底（10）中的衬底基底层（12）和多个相邻的沟槽（17a），其中每个形成间隔物（12a） 在相邻的沟槽（17a）之间。 衬底（10）还包括连接凹槽（17a）的连接腔（17b），并且在与基底侧面（10a，10b），沟槽（17a）和连接腔（17b）平行的方向上延伸 在衬底（10）中形成衬底腔（17）。 衬底（10）还包括覆盖衬底腔（17）的衬底膜（23）。 衬底空腔（17）位于cMUT电池（30）下方的衬底（10）的区域中。 本发明还涉及制造这种超声波换能器装置的方法。
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Patent Agency Ranking
公开(公告)号：US11241715B2
公开(公告)日：2022-02-08
申请号：US15738159
申请日：2016-06-30
Applicant: KONINKLIJKE PHILIPS N.V.
Inventor： Hoa Pham , Ruediger Mauczok , Nico Maris Adriaan De Wild
Abstract: An ultrasound system comprises a probe including an array of CMUT (capacitive micromachined ultrasound transducer) cells. Each cell comprises a substrate carrying a first electrode. The substrate is spatially separated from a flexible membrane including a second electrode. The flexible membrane comprises a mass element in a central region. The system also comprises a voltage supply adapted to, in a transmission mode provide, the respective electrodes with a bias voltage driving the CMUT cells into a collapsed state and a stimulus voltage having a set frequency for resonating the flexible membrane of the CMUT cells in said collapsed state The mass element of the CMUT cells forces the central region of the flexible membrane to remain in the collapsed state during said resonating. A pulse transmission method for such a system is also disclosed.
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公开(公告)号：US10008958B2
公开(公告)日：2018-06-26
申请号：US14624945
申请日：2015-02-18
Applicant: KONINKLIJKE PHILIPS N.V.
Inventor： Peter Dirksen , Ruediger Mauczok , Koray Karakaya , Johan Hendrik Klootwijk , Bout Marcelis , Marcel Mulder
CPC classification number: H02N1/006 , B06B1/0292 , B81B3/00 , B81B2203/0127 , B81C1/00158 , B81C1/00373 , H02N1/08
Abstract: The present invention relates to a method of manufacturing a capacitive micro-machined transducer (100), in particular a CMUT, the method comprising depositing a first electrode layer (10) on a substrate (1), depositing a first dielectric film (20) on the first electrode layer (10), depositing a sacrificial layer (30) on the first dielectric film (20), the sacrificial layer (30) being removable for forming a cavity (35) of the transducer, depositing a second dielectric film (40) on the sacrificial layer (30), and depositing a second electrode layer (50) on the second dielectric film (40), wherein the first dielectric film (20) and/or the second dielectric film (40) comprises a first layer comprising an oxide, a second layer comprising a high-k material, and a third layer comprising an oxide, and wherein the depositing steps are performed by Atomic Layer Deposition. The present invention further relates to a capacitive micro-machined transducer (100), in particular a CMUT, manufactured by such method.
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公开(公告)号：US09889472B2
公开(公告)日：2018-02-13
申请号：US15126089
申请日：2015-03-09
Applicant: KONINKLIJKE PHILIPS N.V.
Inventor： Ruediger Mauczok , Bout Marcelis
CPC classification number: B06B1/0292 , B81C1/00428 , B81C1/00476 , B81C1/00547
Abstract: Disclosed is a method of manufacturing a device (1) comprising a plurality of micro-machined ultrasonic transducer cells (100) in a first region (10) on a substrate (30) and a plurality of interconnects (200) in a second region (20) on said substrate, each of said cells comprising a first electrode (110) separated by a cavity (130) from a second electrode (120) supported by a membrane (140), the method comprising forming a dielectric layer stack (11, 13, 15, 17) over the substrate, said dielectric layer stack defining the respective membranes of the micro-machined ultrasonic transducers in the first region; reducing the thickness of the dielectric layer stack in the second region by partially etching away the dielectric layer stack in the second region; etching a plurality of trenches (22) in the reduced thickness portion of the dielectric layer stack, each of said trenches exposing a conductive contact (210) in the second region; and filling said trenches with a conductive material. A device manufactured in accordance with this method and an apparatus including the device are also disclosed.
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公开(公告)号：US09230908B2
公开(公告)日：2016-01-05
申请号：US14346824
申请日：2012-10-12
Applicant: KONINKLIJKE PHILIPS N.V.
Inventor： Ronald Dekker , Marcelis Bout , Marcel Mulder , Ruediger Mauczok
IPC: H01L23/00 , H01L23/522 , H01L21/768 , H01L23/48 , B06B1/02 , H01L23/532
CPC classification number: H01L23/5226 , B06B1/0292 , H01L21/76898 , H01L23/481 , H01L23/53271 , H01L2224/02372 , H01L2224/0401 , H01L2224/05548 , H01L2224/13024 , H01L2224/131 , H01L2224/16145 , H01L2924/1461 , H01L2924/014 , H01L2924/00
Abstract: The present invention relates to a through-wafer via device (10) comprising a wafer (12) made of a wafer material and having a first wafer surface (12a) and a second wafer surface (12b) opposing the first wafer surface (12a). The through-wafer via device (10) further comprises a plurality of side by side first trenches (14) provided with a conductive material and extending from the first wafer surface (12a) into the wafer (12) such that a plurality of spacers (16) of the wafer material are formed between the first trenches (14). The through-wafer via device (10) further comprises a second trench (18) provided with the conductive material and extending from the second wafer surface (12b) into the wafer (12), the second trench (18) being connected to the first trenches (14). The through-wafer via device (10) further comprises a conductive layer (20) made of the conductive material and formed on the side of the first wafer surface (12a), the conductive material filling the first trenches (14) such that the first conductive layer (20) has a substantially planar and closed surface.
Abstract translation: 本发明涉及包括由晶片材料制成并具有与第一晶片表面（12a）相对的第一晶片表面（12a）和第二晶片表面（12b）的晶片（12）的贯通晶片通孔装置（10） 。 贯通晶片通孔装置（10）还包括设置有导电材料并从第一晶片表面（12a）延伸到晶片（12）中的多个并排的第一沟槽（14），使得多个间隔件 在第一沟槽（14）之间形成晶片材料。 贯通晶片通孔装置（10）还包括设置有导电材料并从第二晶片表面（12b）延伸到晶片（12）中的第二沟槽（18），第二沟槽（18）连接到第一 沟槽（14）。 贯通晶片通孔装置（10）还包括由导电材料制成并形成在第一晶片表面（12a）一侧上的导电层（20），该导电材料填充第一沟槽（14），使得第一 导电层（20）具有基本平坦和闭合的表面。
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公开(公告)号：US09802224B2
公开(公告)日：2017-10-31
申请号：US14365647
申请日：2012-12-13
Applicant: KONINKLIJKE PHILIPS N.V.
Inventor： Ronald Dekker , Bout Marcelis , Marcel Mulder , Ruediger Mauczok
CPC classification number: B06B1/0292 , Y10T29/49005
Abstract: The present invention relates to an ultrasound transducer device comprising at least one cMUT cell (30) for transmitting and/or receiving ultrasound waves, the cMUT cell (30) comprising a cell membrane (30a) and a cavity (30b) underneath the cell membrane. The device further comprises a substrate (10) having a first side (10a) and a second side (10b), the at least one cMUT cell (30) arranged on the first side (10a) of the substrate (10). The substrate (10) comprises a substrate base layer (12) and a plurality of adjacent trenches (17a) extending into the substrate (10) in a direction orthogonal to the substratesides (10a, 10b), wherein spacers (12a) are each formed between adjacent trenches (17a). The substrate (10) further comprises a connecting cavity (17b) which connects the trenches (17a) and which extends in a direction parallel to the substrate sides (10a, 10b), the trenches (17a) and the connecting cavity (17b) together forming a substrate cavity (17) in the substrate (10). The substrate (10) further comprises a substrate membrane (23) covering the substrate cavity (17). The substrate cavity (17) is located in a region of the substrate (10) underneath the cMUT cell (30). The present invention further relates to a method of manufacturing such ultrasound transducer device.
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