Semiconductor package structure
    11.
    发明授权

    公开(公告)号:US12230560B2

    公开(公告)日:2025-02-18

    申请号:US17546191

    申请日:2021-12-09

    Applicant: MEDIATEK INC.

    Abstract: A semiconductor package structure includes a frontside redistribution layer, a first semiconductor die, a first capacitor, a conductive terminal, and a backside redistribution layer. The first semiconductor die is disposed over the frontside redistribution layer. The first capacitor is disposed over the frontside redistribution layer and electrically coupled to the first semiconductor die. The conductive terminal is disposed below the frontside redistribution layer and electrically coupled to the frontside redistribution layer. The backside redistribution layer is disposed over the first semiconductor die.

    VIA ARRAY DESIGN FOR MULTI-LAYER REDISTRIBUTION CIRCUIT STRUCTURE

    公开(公告)号:US20210351124A1

    公开(公告)日:2021-11-11

    申请号:US17179357

    申请日:2021-02-18

    Applicant: MEDIATEK INC.

    Abstract: An interconnect structure for a redistribution layer includes an intermediate via land pad; a cluster of upper conductive vias abutting the intermediate via land pad and electrically coupling the intermediate via land pad to an upper via land pad; and an array of lower conductive vias electrically coupling the intermediate via land pad with a lower circuit pad. The array of lower conductive vias is arranged within a horseshoe-shaped via array region extending along a perimeter of the intermediate via land pad. The array of lower conductive vias arranged within the horseshoe-shaped via array region does not overlap with the cluster of upper conductive vias.

    Semiconductor package structure
    17.
    发明授权

    公开(公告)号:US12165961B2

    公开(公告)日:2024-12-10

    申请号:US18329721

    申请日:2023-06-06

    Applicant: MEDIATEK INC.

    Abstract: A semiconductor package structure having a frontside redistribution layer, a stacking structure disposed over the frontside redistribution layer and having a first semiconductor die and a second semiconductor die over the first semiconductor die. A backside redistribution layer is disposed over the stacking structure, a first intellectual property (IP) core is disposed in the stacking structure and electrically coupled to the frontside redistribution layer through a first routing channel. A second IP core is disposed in the stacking structure and is electrically coupled to the backside redistribution layer through a second routing channel, wherein the second routing channel is different from the first routing channel and electrically insulated from the frontside redistribution layer.

    Via array design for multi-layer redistribution circuit structure

    公开(公告)号:US11776899B2

    公开(公告)日:2023-10-03

    申请号:US17179357

    申请日:2021-02-18

    Applicant: MEDIATEK INC.

    CPC classification number: H01L23/5226 H01L23/3114 H01L23/3128

    Abstract: An interconnect structure for a redistribution layer includes an intermediate via land pad; a cluster of upper conductive vias abutting the intermediate via land pad and electrically coupling the intermediate via land pad to an upper via land pad; and an array of lower conductive vias electrically coupling the intermediate via land pad with a lower circuit pad. The array of lower conductive vias is arranged within a horseshoe-shaped via array region extending along a perimeter of the intermediate via land pad. The array of lower conductive vias arranged within the horseshoe-shaped via array region does not overlap with the cluster of upper conductive vias.

Patent Agency Ranking