公开(公告)号：US20210313339A1

公开(公告)日：2021-10-07

申请号：US17347412

申请日：2021-06-14

Applicant: Micron Technology, Inc.

Inventor： Qian Tao ,  Matthew N. Rocklein ,  Beth R. Cook ,  Durai Vishak Nirmal Ramaswamy

IPC: H01L27/11507 ,  H01L49/02 ,  H01L45/00

Abstract: A method of forming a ferroelectric memory cell. The method comprises forming an electrode material exhibiting a desired dominant crystallographic orientation. A hafnium-based material is formed over the electrode material and the hafnium-based material is crystallized to induce formation of a ferroelectric material having a desired crystallographic orientation. Additional methods are also described, as are semiconductor device structures including the ferroelectric material.

公开(公告)号：US20210104597A1

公开(公告)日：2021-04-08

申请号：US17125030

申请日：2020-12-17

Applicant: Micron Technology, Inc.

Inventor： Muralikrishnan Balakrishnan ,  Beth R. Cook ,  Durai Vishak Nirmal Ramaswamy

IPC: H01L49/02 ,  H01L27/11507

Abstract: A memory cell comprises a capacitor having a first conductive capacitor electrode having laterally-spaced walls that individually have a top surface. A second conductive capacitor electrode is laterally between the walls of the first capacitor electrode, and comprises a portion above the first capacitor electrode. Ferroelectric material is laterally between the walls of the first capacitor electrode and laterally between the second capacitor electrode and the first capacitor electrode. The capacitor comprises an intrinsic current leakage path from one of the first and second capacitor electrodes to the other through the ferroelectric material. A parallel current leakage path is between an elevationally-inner surface of the portion of the second capacitor electrode that is above the first capacitor electrode and at least one of the individual top surfaces of the laterally-spaced walls of the first capacitor electrode. The parallel current leakage path is circuit-parallel the intrinsic current leakage path and of lower total resistance than the intrinsic current leakage path. Other aspects, including methods, are disclosed.

公开(公告)号：US10903218B2

公开(公告)日：2021-01-26

申请号：US16909770

申请日：2020-06-23

Applicant: Micron Technology, Inc.

Inventor： Alessandro Calderoni ,  Beth R. Cook ,  Durai Vishak Nirmal Ramaswamy ,  Ashonita A. Chavan

IPC: H01L27/11509 ,  H01L27/11507 ,  H01L27/11504 ,  H01G4/06 ,  H01L49/02 ,  H01G4/40 ,  G11C11/22 ,  H01G4/008

Abstract: Some embodiments include an integrated assembly having first electrodes with top surfaces, and with sidewall surfaces extending downwardly from the top surfaces. The first electrodes are solid pillars. Insulative material is along the sidewall surfaces of the first electrodes. Second electrodes extend along the sidewall surfaces of the first electrodes and are spaced from the sidewall surfaces by the insulative material. Conductive-plate-material extends across the first and second electrodes, and couples the second electrodes to one another. Leaker-devices electrically couple the first electrodes to the conductive-plate-material and are configured to discharge at least a portion of excess charge from the first electrodes to the conductive-plate-material. Some embodiments include methods of forming integrated assemblies.

公开(公告)号：US10650978B2

公开(公告)日：2020-05-12

申请号：US15843278

申请日：2017-12-15

Applicant: Micron Technology, Inc.

Inventor： Ashonita A. Chavan ,  Beth R. Cook ,  Manuj Nahar ,  Durai Vishak Nirmal Ramaswamy

IPC: H01G4/38 ,  H01L27/11507 ,  G11C11/22 ,  H01L49/02

Abstract: Some embodiments include an apparatus having horizontally-spaced bottom electrodes supported by a supporting structure. Leaker device material is directly against the bottom electrodes. Insulative material is over the bottom electrodes, and upper electrodes are over the insulative material. Plate material extends across the upper electrodes and couples the upper electrodes to one another. The plate material is directly against the leaker device material. The leaker device material electrically couples the bottom electrodes to the plate material, and may be configured to discharge at least a portion of excess charge from the bottom electrodes to the plate material. Some embodiments include methods of forming apparatuses which include capacitors having bottom electrodes and top electrodes, with the top electrodes being electrically coupled to one another through a conductive plate. Leaker devices are formed to electrically couple the bottom electrodes to the conductive plate.

公开(公告)号：US20190386015A1

公开(公告)日：2019-12-19

申请号：US16550983

申请日：2019-08-26

Applicant: Micron Technology, Inc.

Inventor： Qian Tao ,  Matthew N. Rocklein ,  Beth R. Cook ,  Durai Vishak Nirmal Ramaswamy

IPC: H01L27/11507 ,  H01L45/00 ,  H01L49/02

Abstract: A method of forming a ferroelectric memory cell. The method comprises forming an electrode material exhibiting a desired dominant crystallographic orientation. A hafnium-based material is formed over the electrode material and the hafnium-based material is crystallized to induce formation of a ferroelectric material having a desired crystallographic orientation. Additional methods are also described, as are semiconductor device structures including the ferroelectric material.

公开(公告)号：US20220199634A1

公开(公告)日：2022-06-23

申请号：US17693035

申请日：2022-03-11

Applicant: Micron Technology, Inc.

Inventor： Alessandro Calderoni ,  Beth R. Cook ,  Durai Vishak Nirmal Ramaswamy ,  Ashonita A. Chavan

IPC: H01L27/11509 ,  H01G4/008 ,  H01G4/06 ,  H01G4/40 ,  H01L49/02 ,  H01L27/11504 ,  G11C11/22 ,  H01L27/11507

Abstract: Some embodiments include an integrated assembly having first electrodes with top surfaces, and with sidewall surfaces extending downwardly from the top surfaces. The first electrodes are solid pillars. Insulative material is along the sidewall surfaces of the first electrodes. Second electrodes extend along the sidewall surfaces of the first electrodes and are spaced from the sidewall surfaces by the insulative material. Conductive-plate-material extends across the first and second electrodes, and couples the second electrodes to one another. Leaker-devices electrically couple the first electrodes to the conductive-plate-material and are configured to discharge at least a portion of excess charge from the first electrodes to the conductive-plate-material. Some embodiments include methods of forming integrated assemblies.

公开(公告)号：US11315939B2

公开(公告)日：2022-04-26

申请号：US17131065

申请日：2020-12-22

Applicant: Micron Technology, Inc.

Inventor： Alessandro Calderoni ,  Beth R. Cook ,  Durai Vishak Nirmal Ramaswamy ,  Ashonita A. Chavan

IPC: H01L27/11509 ,  H01G4/008 ,  H01G4/06 ,  H01G4/40 ,  H01L49/02 ,  H01L27/11504 ,  G11C11/22 ,  H01L27/11507

Abstract: Some embodiments include an integrated assembly having first electrodes with top surfaces, and with sidewall surfaces extending downwardly from the top surfaces. The first electrodes are solid pillars. Insulative material is along the sidewall surfaces of the first electrodes. Second electrodes extend along the sidewall surfaces of the first electrodes and are spaced from the sidewall surfaces by the insulative material. Conductive-plate-material extends across the first and second electrodes, and couples the second electrodes to one another. Leaker-devices electrically couple the first electrodes to the conductive-plate-material and are configured to discharge at least a portion of excess charge from the first electrodes to the conductive-plate-material. Some embodiments include methods of forming integrated assemblies.

公开(公告)号：US20200328221A1

公开(公告)日：2020-10-15

申请号：US16909770

申请日：2020-06-23

Applicant: Micron Technology, Inc.

Inventor： Alessandro Calderoni ,  Beth R. Cook ,  Durai Vishak Nirmal Ramaswamy ,  Ashonita A. Chavan

IPC: H01L27/11509 ,  H01L27/11507 ,  H01L27/11504 ,  H01G4/06 ,  G11C11/22 ,  H01G4/40 ,  H01G4/008 ,  H01L49/02

Abstract: Some embodiments include an integrated assembly having first electrodes with top surfaces, and with sidewall surfaces extending downwardly from the top surfaces. The first electrodes are solid pillars. Insulative material is along the sidewall surfaces of the first electrodes. Second electrodes extend along the sidewall surfaces of the first electrodes and are spaced from the sidewall surfaces by the insulative material. Conductive-plate-material extends across the first and second electrodes, and couples the second electrodes to one another. Leaker-devices electrically couple the first electrodes to the conductive-plate-material and are configured to discharge at least a portion of excess charge from the first electrodes to the conductive-plate-material. Some embodiments include methods of forming integrated assemblies.

公开(公告)号：US20200243267A1

公开(公告)日：2020-07-30

申请号：US16852284

申请日：2020-04-17

Applicant: Micron Technology, Inc.

Inventor： Ashonita A. Chavan ,  Beth R. Cook ,  Manuj Nahar ,  Durai Vishak Nirmal Ramaswamy

IPC: H01G4/38 ,  H01L27/11507 ,  G11C11/22 ,  H01L49/02

Abstract: Some embodiments include an apparatus having horizontally-spaced bottom electrodes supported by a supporting structure. Leaker device material is directly against the bottom electrodes. Insulative material is over the bottom electrodes, and upper electrodes are over the insulative material. Plate material extends across the upper electrodes and couples the upper electrodes to one another. The plate material is directly against the leaker device material. The leaker device material electrically couples the bottom electrodes to the plate material, and may be configured to discharge at least a portion of excess charge from the bottom electrodes to the plate material. Some embodiments include methods of forming apparatuses which include capacitors having bottom electrodes and top electrodes, with the top electrodes being electrically coupled to one another through a conductive plate. Leaker devices are formed to electrically couple the bottom electrodes to the conductive plate.

公开(公告)号：US20200235111A1

公开(公告)日：2020-07-23

申请号：US16255569

申请日：2019-01-23

Applicant: Micron Technology, Inc.

Inventor： Alessandro Calderoni ,  Beth R. Cook ,  Durai Vishak Nirmal Ramaswamy ,  Ashonita A. Chavan

IPC: H01L27/11509 ,  H01G4/008 ,  H01G4/06 ,  H01G4/40 ,  H01L27/11507 ,  H01L27/11504 ,  G11C11/22 ,  H01L49/02

Abstract: Some embodiments include an integrated assembly having first electrodes with top surfaces, and with sidewall surfaces extending downwardly from the top surfaces. The first electrodes are solid pillars. Insulative material is along the sidewall surfaces of the first electrodes. Second electrodes extend along the sidewall surfaces of the first electrodes and are spaced from the sidewall surfaces by the insulative material. Conductive-plate-material extends across the first and second electrodes, and couples the second electrodes to one another. Leaker-devices electrically couple the first electrodes to the conductive-plate-material and are configured to discharge at least a portion of excess charge from the first electrodes to the conductive-plate-material. Some embodiments include methods of forming integrated assemblies.