公开(公告)号：US11268900B2

公开(公告)日：2022-03-08

申请号：US16781474

申请日：2020-02-04

Applicant: NIKON CORPORATION

Inventor： Takanori Kojima ,  Satoru Odate ,  Toru Takagi

IPC: G01N21/21 ,  G01N21/31 ,  G01N21/25 ,  G01J3/51 ,  G01J3/28 ,  G01J3/02 ,  G01J4/04 ,  G01J4/00 ,  G01J3/00 ,  H01L27/146 ,  G06T15/00 ,  A61B1/06 ,  A61B1/00 ,  A61B1/04 ,  G06T7/521 ,  G01N21/47 ,  G01J1/42

Abstract: A polarization property image measurement device includes: a first radiation unit that radiates light beams in different polarization conditions onto a target object after subjecting the light beams to intensity modulation at frequencies different from one another; a light receiving unit including first photoelectric conversion units that photoelectrically convert the light beams having been radiated from the first radiation unit and scattered at the target object in correspondence to each of the different polarization conditions, and second photoelectric conversion units that photoelectrically convert visible light from the target object; and a processor that detects signals individually output from the first photoelectric conversion units at the different frequencies and differentiates each signal from other signals so as to determine an origin of the signal as one of the light beams; and creates an image of the target object based upon signals individually output from the second photoelectric conversion units.

公开(公告)号：US11177312B2

公开(公告)日：2021-11-16

申请号：US16861592

申请日：2020-04-29

Applicant: NIKON CORPORATION

Inventor： Shigeru Matsumoto ,  Toru Takagi

IPC: H01L27/146 ,  H04N5/374 ,  H04N5/3745 ,  H04N5/369 ,  H04N5/378

Abstract: A first circuit layer including a first semiconductor substrate with photoelectric conversion unit that photoelectrically converts incident light and generates charge, and a first wiring layer with wiring that reads out signal based upon charge generated by the photoelectric conversion unit; second circuit layer including a second wiring layer with wiring connected to the wiring of the first wiring layer, and a second semiconductor substrate with a through electrode connected to the wiring of the second wiring layer; third circuit layer including a third semiconductor substrate with a through electrode connected to the through electrode of the second circuit layer, and third wiring layer with wiring connected to the through electrode of the third semiconductor substrate; and a fourth circuit layer including a fourth wiring layer with wiring connected to the wiring of the third wiring layer, and fourth semiconductor substrate connected to the wiring of the fourth wiring layer.

公开(公告)号：US10686004B2

公开(公告)日：2020-06-16

申请号：US16085168

申请日：2017-02-28

Applicant: NIKON CORPORATION

Inventor： Shutaro Kato ,  Toru Takagi ,  Takashi Seo ,  Ryoji Ando

IPC: H01L27/146 ,  H04N5/369

Abstract: An image sensor having a plurality of pixels along a first direction includes: a first pixel having a first photoelectric conversion unit that generates an electric charge through photoelectric conversion and a reflecting portion disposed at least in a part of an area located in the first direction relative to a center of the first photoelectric conversion unit, which reflects part of light having been transmitted through the first photoelectric conversion unit toward the first photoelectric conversion unit; and a second pixel having a second photoelectric conversion unit that generates an electric charge through photoelectric conversion and a second reflecting portion disposed at least in a part of an area located in a direction opposite from the first direction relative to a center of the second photoelectric conversion unit, which reflects part of light having been transmitted through the second photoelectric conversion unit toward the second photoelectric conversion unit.

公开(公告)号：US10574930B2

公开(公告)日：2020-02-25

申请号：US15765152

申请日：2016-09-27

Applicant: NIKON CORPORATION

Inventor： Atsushi Kamashita ,  Atsushi Komai ,  Toru Takagi ,  Tomohisa Ishida

IPC: H04N5/369 ,  H01L27/12 ,  H01L27/146 ,  H04N5/374

Abstract: An image sensor includes a first semiconductor layer provided with a pixel, including a photoelectric conversion unit that photoelectrically converts incident light to generate an electric charge, an accumulation unit that accumulates the electric charge generated by the photoelectric conversion unit, and a transfer unit that transfers the electric charge generated by the photoelectric conversion unit to the accumulation unit, a second semiconductor layer provided with a supply unit that supplies the transfer unit with a transfer signal for transferring the electric charge from the photoelectric conversion unit to the accumulation unit, and a third semiconductor layer into which a signal is inputted, the signal being based on the electric charge that has been transferred to the accumulation unit.

公开(公告)号：US10291831B2

公开(公告)日：2019-05-14

申请号：US15717048

申请日：2017-09-27

Applicant: NIKON CORPORATION

Inventor： Wataru Funamizu ,  Hiroshi Ohki ,  Shigeru Aoki ,  Naoki Ohkouchi ,  Toru Takagi ,  Yojiro Tezuka ,  Sota Nakanishi

IPC: H04N5/225 ,  G06T1/00 ,  H04N5/232 ,  H04N5/238 ,  H04N9/07 ,  A61B1/00 ,  A61B1/04 ,  A61B1/06 ,  A61B1/313 ,  H04N5/235 ,  H04N5/341 ,  H04N5/351 ,  H04N9/04 ,  H04N1/48

Abstract: Provided is an image processing apparatus including as image acquiring section that acquires a plurality of images obtained by imaging, at different times, a subject irradiated with lights intensity-modulated with a plurality of modulation frequencies or modulation frequency bands; and a demodulating section that demodulates pixel values of the plurality of images with a plurality of demodulation frequencies or demodulation frequency bands based on the plurality of modulation frequencies or modulation frequency bands, for each pixel, thereby generating a plurality of pieces of pixel information indicating subject light amounts from the subject caused by each of the lights intensity-modulated with the plurality of modulation frequencies or modulation frequency bands, for each pixel.