Abstract:
A pattern evaluation method comprising the steps of, illuminating light from a light source constituting an optical system and acquiring an optical image of a sample having a repeated pattern with a period not more than a resolution of the optical system, allocating a gradation value to each pixel of the optical image and obtaining at least one of an average gradation value for each predetermined unit region and deviation of the gradation value in the unit region, and performing at least one of a process of converting the average gradation value into average line width information in the region of the repeated pattern and a process of converting the deviation of the gradation value into roughness of the repeated pattern and creating a map representing distribution of at least one of the average line width information and the roughness with the use of an obtained converted value.
Abstract:
According to one embodiment, a pattern test apparatus includes a light source configured to apply test light to a test sample, a polarizing beam splitter which reflects or transmits the test light, an imaging device which receives light which has been reflected by the test sample and transmitted through or reflected by the polarizing beam splitter, an optical system which forms a Fourier transform plane of the test sample between the test sample and the polarizing beam splitter, and a polarizing controller disposed in the Fourier transform plane. The polarizing controller includes a first region which lets the test light through, and a second region which is greater than the first region and lets the light reflected by the test sample through, and the each regions have different retardation quantities.
Abstract:
According to one aspect of the present invention, a multiple electron beam inspection apparatus includes a reference image generation circuit generating reference images corresponding to the secondary electron images, in accordance with an image generation characteristic of a secondary electron image by irradiation of one beam; and a correction circuit generating corrected reference images in which, on the basis of deviation information between a figure pattern of the secondary electron image by irradiation of the one beam of the multiple primary electron beams and a figure pattern of a secondary electron image by irradiation of another beam different from the one beam of the multiple primary electron beams, a shape of a figure pattern of a reference image corresponding to the figure pattern of the secondary electron image by the irradiation of the another beam in the reference images is corrected.
Abstract:
According to one aspect of the present invention, a pattern inspection apparatus includes: a first sub-pixel interpolation processing circuitry configured to calculate a pixel value of a reference image corresponding to a position of each pixel of the inspection target image by performing an interpolation process using at least one pixel value of the reference image for each shift amount while variably and relatively shifting the inspection target image and the reference image by the unit of a sub-pixel using the reference image corresponding to the inspection target image; and an SSD calculation processing circuitry configured to calculate a sum of squared difference between each pixel value of the inspection target image and a corresponding pixel value of the reference image subjected to a filter process for the each shift amount.
Abstract:
A polarized image acquisition apparatus includes a division type half-wave plate, located opposite to the mask substrate with respect to an objective lens and near an objective lens pupil position, to arrange P and S polarized waves of the transmitted light having passed through the objective lens to be mutually orthogonal, a Rochon prism to separate trajectories of P and S polarized waves, an imaging lens to form images of P and S polarized waves having passed through the Rochon prism at image formation positions different from each other, a mirror, in a case where one of P and S polarized waves is focused/formed at one of the different image formation positions, to reflect the other wave at the other position, a first sensor to capture an image of one of P and S polarized waves, and a second sensor to capture an image of the other wave.
Abstract:
A pattern inspection apparatus includes a first half-wave plate to receive an ultraviolet light linearly polarized in a first electric field oscillation direction, and output a linearly polarized light polarized in a second electric field oscillation direction obtained by rotating by an integer multiple of 90°, a mirror to reflect the linearly polarized light polarized in the second electric field oscillation direction, and output a linearly polarized light polarized in a third electric field oscillation direction parallel or orthogonal to the second electric field oscillation direction, a second half-wave plate to convert the linearly polarized light polarized in the third electric field oscillation direction, which has been reflected, to a linearly polarized light polarized in a fourth electric field oscillation direction by rotating by an angle different from an integer multiple of 90°.
Abstract:
According to one aspect of the present invention, a pattern inspection apparatus includes a first diaphragm that is positioned on an optical path of a reflection illumination optical system and has a first reference pattern of a line-and-space pattern formed thereon; a semi-transmission reflection plate configured to reflect a portion of a reference pattern image that has passed through the first reference pattern; a second diaphragm which is positioned on an optical path of the imaging optical system, on which the portion of the reference pattern image reflected by the semi-transmission reflection plate is projected, and which has a second reference pattern of a line-and-space pattern formed thereon; and a first time delay integration sensor (TDI sensor) configured to receive the portion of the reference pattern image that has passed through the second reference pattern.
Abstract:
An inspection object is supported by a table. Light is emitted from a light source to illuminate the inspection object. An optical unit illuminates the inspection object with light, wherein the light is transmitted through the inspection object. Another optical unit illuminates the inspection object with light, wherein the light is reflected by the inspection object. Light transmitted through the inspection object is incident to a first sensor. Light reflected by the inspection object is incident to a second sensor. A defect of a pattern of the inspection object is detected using optical image data output from at least one of the sensors. A line width error is obtained by comparing line widths obtained from design data and optical image data of the pattern. A polarized beam splitter is disposed, movable between the inspection object and the first sensor, and between the inspection object and the second sensor.
Abstract:
A substrate to be inspected includes a first pattern constructed with a repetitive pattern that is not resolved by a wavelength of a light source, and at least one alignment mark that is arranged on the same plane as the first pattern. The alignment mark includes a second pattern constructed with a repetitive pattern that is not resolved by the wavelength of the light source, and a programmed defect that is provided in the second pattern and not resolved by the wavelength of the light source. A focus offset is adjusted such that the strongest signal of the programmed defect is obtained with respect to a base value of a gradation value in an optical image of the programmed defect by capturing the optical image while changing a focal distance between the surface in which the first pattern is provided and an optical system.
Abstract:
An illumination apparatus according to embodiments includes: a light source generating laser light; a rotational phase plate having a plurality of randomly arranged stepped regions, the rotational phase plate transmitting the laser light to give a phase change to the laser light; and an integrator including a plurality of lenses arranged in an array, the laser light transmitted through the rotational phase plate being incident on the integrator, an allowable angle of incidence for the laser light of the lenses being set at a maximum value of or larger than an angle of diffraction of a first order of the laser light at the rotational phase plate.