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    Lift Printing of Fine Metal Lines
    12.
    发明公开
    Lift Printing of Fine Metal Lines 审中-公开

    公开(公告)号：US20230422402A1

    公开(公告)日：2023-12-28

    申请号：US18039116

    申请日：2021-06-22

    Applicant: Orbotech Ltd.

    Inventor： Sharona Cohen ,  Ofer Fogel ,  Zvi Kotler

    IPC: H05K3/10 ,  H05K1/16 ,  H05K3/14

    CPC classification number: H05K3/102 ,  H05K1/167 ,  H05K3/14 ,  H05K2203/107 ,  H05K2203/1344

    Abstract: A method for circuit fabrication includes defining a locus of a conductive trace to be formed on a circuit substrate. Molten droplets of a metal are ejected from a donor substrate in proximity to the circuit substrate onto the defined locus by a process of laser-induced forward transfer (LIFT), whereby the droplets adhere to and harden on the circuit substrate along a length of the defined locus. After the droplets have hardened, a laser beam is directed toward the defined locus with sufficient energy to cause the metal in the hardened droplets to melt and coalesce into a bulk layer extending along the length of the defined locus.

    LIFT printing of conductive traces onto a semiconductor substrate
    13.
    发明授权
    LIFT printing of conductive traces onto a semiconductor substrate 有权

    公开(公告)号：US10193004B2

    公开(公告)日：2019-01-29

    申请号：US15509491

    申请日：2015-10-19

    Applicant: Orbotech Ltd.

    Inventor： Michael Zenou ,  Zvi Kotler

    IPC: H01L31/05 ,  H01L31/0224 ,  H05K3/14 ,  H01L21/48 ,  H01L21/285 ,  B23K26/00 ,  C23C14/04 ,  C23C14/28

    Abstract: A method for metallization includes providing a transparent donor substrate (34) having deposited thereon a donor film (36) including a metal with a thickness less than 2 pm. The donor substrate is positioned in proximity to an acceptor substrate (22) including a semiconductor material with the donor film facing toward the acceptor substrate and with a gap of at least 0.1 mm between the donor film and the acceptor substrate. A train of laser pulses, having a pulse duration less than 2 ns, is directed to impinge on the donor substrate so as to cause droplets (44) of the metal to be ejected from the donor layer and land on the acceptor substrate, thereby forming a circuit trace (25) in ohmic contact with the semiconductor material.

    ANGLED LIFT JETTING
    14.
    发明申请
    ANGLED LIFT JETTING 审中-公开

    公开(公告)号：US20170306495A1

    公开(公告)日：2017-10-26

    申请号：US15644857

    申请日：2017-07-10

    Applicant: ORBOTECH LTD.

    Inventor： Zvi Kotler ,  Michael Zenou

    IPC: C23C18/14

    Abstract: An apparatus for material deposition on an acceptor surface includes a transparent donor substrate having opposing first and second surfaces, such that at least a part of the second surface is not parallel to the acceptor surface, and including a donor film on the second surface. The apparatus additionally includes an optical assembly, which is configured to direct a beam of radiation to pass through the first surface of the donor substrate and impinge on the donor film at a location on the part of the second surface that is not parallel to the acceptor surface, so as to induce ejection of droplets of molten material from the donor film onto the acceptor surface.

    Lift printing using thin donor foils
    16.
    发明授权
    Lift printing using thin donor foils 有权

    公开(公告)号：US12162294B2

    公开(公告)日：2024-12-10

    申请号：US17427372

    申请日：2020-05-04

    Applicant: Orbotech Ltd.

    Inventor： Marc Altman ,  Zvi Kotler ,  Itay Peled ,  Oleg Ermak ,  Sharona Cohen

    IPC: B41J2/455 ,  B41J2/435 ,  B41J2/44 ,  B41J2/47 ,  B41J33/14 ,  H05K3/12

    Abstract: Printing apparatus includes a donor supply assembly, which positions a transparent donor substrate having opposing first and second surfaces and a donor film formed on the second surface so that the donor film is in proximity to a target area on an acceptor substrate. An optical assembly directs one or more beams of laser radiation to pass through the first surface of the donor substrate and impinge on the donor film so as to induce ejection of material from the donor film onto the acceptor substrate. Means are provided to mitigate or compensate for the variation in reflection of the laser radiation across an area of the donor substrate, so as to equalize a flux of the laser radiation that is absorbed in the donor film across the area of the donor substrate.

    High-Speed Dynamic Beam Shaping
    17.
    发明申请
    High-Speed Dynamic Beam Shaping 有权

    公开(公告)号：US20220121082A1

    公开(公告)日：2022-04-21

    申请号：US17423471

    申请日：2020-02-27

    Applicant: Orbotech Ltd.

    Inventor： Zvi Kotler ,  Yuval Berg

    IPC: G02F1/33 ,  G02B27/09 ,  B23K26/064 ,  B23K26/06 ,  B23K26/073

    Abstract: Optical apparatus (20) includes a laser (22), which is configured to emit a beam of coherent optical radiation at a specified wavelength along a beam axis. A deflector (24) is configured to intercept and selectably deflect the beam over a range of angles relative to the beam axis. A plurality of diffractive optical elements (DOEs—32, 34, 36, 64, 66, 68) are positioned to receive the deflected beam at different, respective deflection angles within the range and to output respective diffracted beams. Beam-combining optics (42, 74) are configured to receive and deflect the diffracted beams from the DOEs so that all of the diffracted beams are directed along a common output axis toward a target (48).

    Control of surface properties of printed three-dimensional structures
    19.
    发明授权
    Control of surface properties of printed three-dimensional structures 有权

    公开(公告)号：US10688692B2

    公开(公告)日：2020-06-23

    申请号：US15763451

    申请日：2016-11-01

    Applicant: Orbotech Ltd.

    Inventor： Michael Zenou ,  Zvi Kotler

    IPC: B29C41/08 ,  B22C9/00 ,  B44C1/22 ,  B29C33/38 ,  G03F7/00 ,  B22D23/00 ,  B22D29/00 ,  B29C37/00 ,  B29C41/42 ,  B29C41/46

    Abstract: A method for fabrication includes providing a substrate having an upper surface with pattern of one or more recesses formed therein. A laser beam is directed to impinge on a donor film so as to eject droplets of a fluid from the donor film by laser-induced forward transfer (LIFT) into the one or more recesses. The fluid hardens within the one or more recesses to form a solid piece having a shape defined by the one or more recesses. The substrate is removed from the solid piece. In some embodiments, the recesses are coated with a thin-film layer before ejecting the droplets into the recesses, such that the thin-film layer remains as an outer surface of the solid piece after removing the substrate.

    LIFT printing of conductive traces onto a semiconductor substrate
    20.
    发明申请
    LIFT printing of conductive traces onto a semiconductor substrate 审中-公开

    公开(公告)号：US20190088804A1

    公开(公告)日：2019-03-21

    申请号：US16194407

    申请日：2018-11-19

    Applicant: Orbotech Ltd.

    Inventor： Michael Zenou ,  Zvi Kotler

    IPC: H01L31/0224 ,  C23C14/28 ,  C23C14/04 ,  B23K26/00 ,  H01L21/48 ,  H05K3/14 ,  H01L21/285 ,  H01L31/05

    Abstract: A method for metallization includes providing a transparent donor substrate (34) having deposited thereon a donor film (36) including a metal with a thickness less than 2 μm. The donor substrate is positioned in proximity to an acceptor substrate (22) including a semiconductor material with the donor film facing toward the acceptor substrate and with a gap of at least 0.1 mm between the donor film and the acceptor substrate. A train of laser pulses, having a pulse duration less than 2 ns, is directed to impinge on the donor substrate so as to cause droplets (44) of the metal to be ejected from the donor layer and land on the acceptor substrate, thereby forming a circuit trace (25) in ohmic contact with the semiconductor material.

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