公开(公告)号：US20090242543A1

公开(公告)日：2009-10-01

申请号：US12060652

申请日：2008-04-01

Applicant: Zsolt Nenyei ,  Paul Janis Timans

Inventor： Zsolt Nenyei ,  Paul Janis Timans

IPC: H01L21/02 ,  H01L21/324 ,  F26B3/30 ,  G05D23/27

CPC classification number: G05D23/27 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/67253 ,  H01L22/26

Abstract: Temperature control in an RTP system can be improved by consideration of one or more witness structures different from the wafer (or other semiconductor object) being processed. For example, power coupling between the RTP heating system and witness structure can be used to adjust one or more control parameters, such as model definitions, that are used by the RTP system to control wafer heating. As another example, a stored trajectory of a desired witness structure temperature or other property can be used as a basis for control during a processing cycle. Thus, the witness structure may be controlled “closed-loop” while the wafer is heated “open-loop.” As a further example, a heat flux between the RTP heating system and witness structure can be used to determine radiant energy from the heating system that is incident on the witness structure. One or more control actions can be taken based on this incident energy.

Abstract translation: 通过考虑与正在处理的晶片（或其他半导体物体）不同的一个或多个证人结构，可以提高RTP系统中的温度控制。 例如，RTP加热系统和见证结构之间的功率耦合可用于调整由RTP系统用于控制晶片加热的一个或多个控制参数，例如模型定义。 作为另一个示例，期望的见证结构温度或其他属性的存储的轨迹可以用作处理循环期间的控制的基础。 因此，当晶片被加热“开环”时，证人结构可以被控制为“闭环”。 作为另一个例子，可以使用RTP加热系统和证人结构之间的热通量来确定来自加热系统的辐射能量，该加热系统是入射到见证结构上的。 可以基于该入射能量进行一个或多个控制动作。

公开(公告)号：US07015422B2

公开(公告)日：2006-03-21

申请号：US10040272

申请日：2001-11-07

Applicant: Paul Janis Timans

Inventor： Paul Janis Timans

IPC: F27B5/14

CPC classification number: H01L21/67115 ,  C23C16/481 ,  C30B25/105 ,  C30B31/12 ,  F27B17/0025 ,  G02B5/124

Abstract: Various processes for heating semiconductor wafers is disclosed. In particular, the present invention is directed to configuring light sources emitting light energy onto a wafer in order to optimize absorption of the energy by the wafer. Optimization is carried out by varying the angle of incidence of the light energy contacting the wafer, using multiple wavelengths of light, and configuring the light energy such that it contacts the wafer in a particular polarized state. In one embodiment, the light energy can be emitted by a laser that is scanned over the surface of the wafer.

Abstract translation: 公开了用于加热半导体晶片的各种工艺。 特别地，本发明旨在将发射光能的光源配置到晶片上，以便优化晶片对能量的吸收。 通过使用多个波长的光改变与晶片接触的光能的入射角进行优化，并且配置光能使其以特定的极化状态接触晶片。 在一个实施例中，光能可由在晶片的表面上扫描的激光器发射。

公开(公告)号：US08696197B2

公开(公告)日：2014-04-15

申请号：US13415963

申请日：2012-03-09

Applicant: Paul Janis Timans

Inventor： Paul Janis Timans

IPC: G01J5/00 ,  G01N21/00

CPC classification number: H01L21/67115 ,  G01J5/0003 ,  G01N21/55 ,  H01L21/67248 ,  H01L22/24

Abstract: A method and system are disclosed for determining at least one optical characteristic of a substrate, such as a semiconductor wafer. Once the optical characteristic is determined, at least one parameter in a processing chamber may be controlled for improving the process. For example, in one embodiment, the reflectivity of one surface of the substrate may first be determined at or near ambient temperature. From this information, the reflectance and/or emittance of the wafer during high temperature processing may be accurately estimated. The emittance can be used to correct temperature measurements using a pyrometer during wafer processing. In addition to making more accurate temperature measurements, the optical characteristics of the substrate can also be used to better optimize the heating cycle.

Abstract translation: 公开了一种用于确定诸如半导体晶片的衬底的至少一种光学特性的方法和系统。 一旦确定了光学特性，则可以控制处理室中的至少一个参数以改善处理。 例如，在一个实施例中，可以首先在环境温度或接近环境温度下确定衬底的一个表面的反射率。 根据该信息，可以准确地估计在高温处理期间晶片的反射率和/或发射率。 在晶片处理过程中，发射率可用于使用高温计校正温度测量。 除了进行更准确的温度测量之外，基板的光学特性也可用于更好地优化加热循环。

公开(公告)号：US08222570B2

公开(公告)日：2012-07-17

申请号：US12270377

申请日：2008-11-13

Applicant: Paul Janis Timans

Inventor： Paul Janis Timans

IPC: F27B5/14 ,  C23C16/00

CPC classification number: H01L21/67115 ,  C23C16/481 ,  C30B25/105 ,  C30B31/12 ,  F27B17/0025 ,  G02B5/124

Abstract: An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly linear lamps for emitting light energy onto a wafer. The linear lamps can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be, for instance, are lamps or lasers.

Abstract translation: 公开了一种用于热处理半导体晶片的设备。 该装置包括加热装置，其包含用于将光能发射到晶片上的组装线性灯。 线性灯可以放置在各种配置中。 根据本发明，用于调节光能源的总体辐照度分布的调谐装置包括在加热装置中。 调谐装置可以是例如灯或激光器。

公开(公告)号：US07976216B2

公开(公告)日：2011-07-12

申请号：US11961526

申请日：2007-12-20

Applicant: Paul Janis Timans

Inventor： Paul Janis Timans

IPC: G01G5/00 ,  G01K17/08 ,  G01K11/00

CPC classification number: G01K11/125

Abstract: The temperature of an object such as a semiconductor wafer that includes silicon can be determined based on the variation of the optical absorption coefficient of silicon with temperature. Temperatures above about 850° C., can be found by measuring phenomena that are affected by the magnitude of the optical absorption coefficient, especially at wavelengths >˜1 μm. Phenomena could include measuring light reflected, transmitted, emitted, absorbed, or scattered by the wafer and deriving the absorption coefficient from the measurements and then deriving temperature from the absorption coefficient. Temperature could be determined from a model relating phenomena directly to temperature, the model constructed based on absorption behavior and techniques discussed herein. The resulting temperature could be used to calibrate or control a rapid thermal processing chamber or other apparatus.

Abstract translation: 可以基于硅的光吸收系数随温度的变化来确定诸如包括硅的半导体晶片的物体的温度。 高于约850℃的温度可以通过测量受光吸收系数的大小影响的现象，特别是在≥1μm的波长处。 现象可以包括测量由晶片反射，透射，发射，吸收或散射的光，并从测量中导出吸收系数，然后从吸收系数导出温度。 温度可以从直接与现象直接相关的模型来确定，基于吸收行为构建的模型和本文讨论的技术。 所得温度可用于校准或控制快速热处理室或其它设备。

公开(公告)号：US07957926B2

公开(公告)日：2011-06-07

申请号：US12787165

申请日：2010-05-25

Applicant: Paul Janis Timans

Inventor： Paul Janis Timans

IPC: G01K11/12

CPC classification number: G01J5/0896 ,  G01J5/0003 ,  G01J5/0007 ,  G01J5/0285 ,  G01J5/06 ,  G01J5/08 ,  G01J5/0803 ,  G01J5/0821 ,  G01J5/0831 ,  G01J5/0846 ,  G01J5/089 ,  G01J5/522 ,  G01J5/58 ,  G01J2005/0048 ,  G01J2005/065 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/67248

Abstract: A method and system for calibrating temperature measurement devices, such as pyrometers, in thermal processing chambers are disclosed. According to the present invention, the system includes a calibrating light source that emits light energy onto a substrate contained in the thermal processing chamber. A light detector then detects the amount of light that is being transmitted through the substrate. The amount of detected light energy is then used to calibrate a temperature measurement device that is used in the system.

Abstract translation: 公开了一种在热处理室中校准温度测量装置，例如高温计的方法和系统。 根据本发明，该系统包括在包含在热处理室中的基板上发射光能的校准光源。 然后光检测器检测正在透过基板的光量。 然后使用检测到的光能量来校准在系统中使用的温度测量装置。

公开(公告)号：US07949237B2

公开(公告)日：2011-05-24

申请号：US11853414

申请日：2007-09-11

Applicant: Zion Koren ,  Conor Patrick O'Carroll ,  Shuen Chun Choy ,  Paul Janis Timans ,  Rudy Santo Tomas Cardema ,  James Tsuneo Taoka ,  Arieh A. Strod

Inventor： Zion Koren ,  Conor Patrick O'Carroll ,  Shuen Chun Choy ,  Paul Janis Timans ,  Rudy Santo Tomas Cardema ,  James Tsuneo Taoka ,  Arieh A. Strod

IPC: A21B2/00 ,  F26B3/30 ,  C23C16/00

CPC classification number: H01L21/67115 ,  C23C16/481 ,  C30B25/105 ,  C30B31/12

Abstract: An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly linear lamps for emitting light energy onto a wafer. The linear lamps can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be, for instance, are lamps or lasers.

Abstract translation: 公开了一种用于热处理半导体晶片的设备。 该装置包括加热装置，其包含用于将光能发射到晶片上的组装线性灯。 线性灯可以放置在各种配置中。 根据本发明，用于调节光能源的总体辐照度分布的调谐装置包括在加热装置中。 调谐装置可以是例如灯或激光器。

公开(公告)号：US07543981B2

公开(公告)日：2009-06-09

申请号：US11478312

申请日：2006-06-29

Applicant: Paul Janis Timans

Inventor： Paul Janis Timans

IPC: G01G5/00 ,  G01K17/08 ,  G01K11/00

CPC classification number: G01K15/00 ,  G01J5/0007 ,  G01J5/0806 ,  G01J5/0831 ,  G01J5/0846 ,  G01K11/125

Abstract: Methods and apparatus for wafer temperature measurement and calibration of temperature measurement devices may be based on determining the absorption of a layer in a semiconductor wafer. The absorption may be determined by directing light towards the wafer and measuring light reflected from the wafer from below the surface upon which the incident light impinges. Calibration wafers and measurement systems may be arranged and configured so that light reflected at predetermined angles to the wafer surface is measured and other light is not. Measurements may also be based on evaluating the degree of contrast in an image of a pattern in or on the wafer. Other measurements may utilize a determination of an optical path length within the wafer alongside a temperature determination based on reflected or transmitted light.

Abstract translation: 用于晶片温度测量和温度测量装置的校准的方法和装置可以基于确定半导体晶片中的层的吸收。 可以通过将光引向晶片并且从入射光入射的表面下方测量从晶片反射的光来确定吸收。 校准晶片和测量系统可以被布置和配置，以便测量以预定角度反射到晶片表面的光并且其它光不是。 测量也可以基于评估晶片中或晶片上的图案的图像中的对比度。 其他测量可以利用基于反射或透射光的温度确定旁边的晶片内的光程长度的确定。

公开(公告)号：US06717158B1

公开(公告)日：2004-04-06

申请号：US09478247

申请日：2000-01-06

Applicant: Arnon Gat ,  Bob Bogart ,  Conor Patrick O'Carroll ,  Paul Janis Timans ,  Shuen Chun Choy ,  Zion Koren ,  Chris Francis Bragg

Inventor： Arnon Gat ,  Bob Bogart ,  Conor Patrick O'Carroll ,  Paul Janis Timans ,  Shuen Chun Choy ,  Zion Koren ,  Chris Francis Bragg

IPC: H01L2100

CPC classification number: H01L21/67115 ,  F27B5/04 ,  F27B5/14 ,  F27B17/0025 ,  F27D19/00

Abstract: An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. The light energy sources can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be either active sources of light energy or passive sources which reflect, refract or absorb light energy. For instance, in one embodiment, the tuning devices can comprise a lamp spaced from a focusing lens designed to focus determined amounts of light energy onto a particular location of a wafer being heated.

公开(公告)号：US20100252547A1

公开(公告)日：2010-10-07

申请号：US12819784

申请日：2010-06-21

Applicant: Paul Janis Timans

Inventor： Paul Janis Timans

IPC: F27B5/14 ,  F27D11/00

CPC classification number: H01L21/67115 ,  F27B5/04 ,  F27B17/0025 ,  H01L21/67109

Abstract: An approach for optimizing the thermal budget during a pulsed heating process is disclosed. A heat sink or thermal transfer plate is configured and positioned near an object, such as a semiconductor wafer, undergoing thermal treatment. The heat sink is configured to enhance the thermal transfer rate from the object so that the object is rapidly brought down from the peak temperature after an energy pulse. High thermally-conductive material may be positioned between the plate and the object. The plate may include protrusions, ribs, holes, recesses, and other discontinuities to enhance heat transfer and avoid physical damage to the object during the thermal cycle. Additionally, the optical properties of the plate may be selected to allow for temperature measurements via energy measurements from the plate, or to provide for a different thermal response to the energy pulse. The plate may also allow for pre-heating or active cooling of the wafer.

Abstract translation: 公开了一种在脉冲加热过程中优化热预算的方法。 散热器或热转印板被配置和定位在经受热处理的诸如半导体晶片的物体附近。 散热器被配置为增强从物体的热传递速率，使得物体在能量脉冲之后迅速从峰值温度降低。 高导热材料可以位于板和物体之间。 板可以包括突起，肋，孔，凹槽和其它不连续性，以增强热传递并且避免在热循环期间对物体的物理损伤。 此外，可以选择板的光学性质以允许通过来自板的能量测量进行温度测量，或者为能量脉冲提供不同的热响应。 该板还可以允许对晶片进行预热或主动冷却。