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公开(公告)号:US20200176509A1
公开(公告)日:2020-06-04
申请号:US16436333
申请日:2019-06-10
Applicant: PlayNitride Display Co., Ltd.
Inventor: Ying-Tsang Liu , Pei-Hsin Chen , Yi-Chun Shih , Yi-Ching Chen , Yu-Chu Li , Huan-Pu Chang , Tzu-Yang Lin , Yu-Hung Lai
Abstract: A micro semiconductor structure is provided. The micro semiconductor structure includes a substrate, at least one supporting layer, and at least one micro semiconductor device. The supporting layer includes at least one upper portion and a bottom portion, wherein the upper portion extends in a first direction. The length L1 of the upper portion in the first direction is greater than the length L2 of the bottom portion in the first direction. Furthermore, the bottom surface of the micro semiconductor device is in direct contact with the upper portion of the supporting layer.
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公开(公告)号:US11532603B2
公开(公告)日:2022-12-20
申请号:US17123146
申请日:2020-12-16
Applicant: PlayNitride Display Co., Ltd.
Inventor: Yi-Ching Chen , Pei-Hsin Chen , Yi-Chun Shih
IPC: H01L25/075 , H01L23/00 , H01L33/62
Abstract: The present invention discloses a display panel and a head mounted device. The display panel includes a substrate and a plurality of micro light emitting units. A first position and a second position are defined at an edge and a center of the substrate respectively. The micro light emitting units are arranged and disposed on the substrate. Any two of the micro light emitting units are disposed at the first position and the second position respectively. Wherein each micro light emitting unit defines a luminating top surface, and a reference angle is defined between each luminating top surface and a reference plane respectively. Wherein the reference angle defined between each luminating top surface and the reference plane gradually decreases from the first position to the second position, and the luminating top surface of the micro light emitting unit located at the second position is parallel to the reference surface.
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公开(公告)号:US11462661B2
公开(公告)日:2022-10-04
申请号:US16730788
申请日:2019-12-30
Applicant: PlayNitride Display Co., Ltd.
Inventor: Yi-Ching Chen , Yu-Chu Li
Abstract: A micro light emitting diode chip includes a light emitting layer, a first type semiconductor layer, and a second type semiconductor layer. The light emitting layer includes a metal element and a plurality of non-epitaxial media. The non-epitaxial media are separated from each other to disperse the metal element. A spacing between any two adjacent non-epitaxial media is less than 100 nanometers. The first type semiconductor layer is disposed on one side of the light emitting layer. The second type semiconductor layer is disposed on the other side of the light emitting layer.
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公开(公告)号:US11302547B2
公开(公告)日:2022-04-12
申请号:US16581777
申请日:2019-09-25
Applicant: PlayNitride Display Co., Ltd.
Inventor: Pei-Hsin Chen , Yi-Chun Shih , Yi-Ching Chen , Ying-Tsang Liu , Yu-Chu Li , Huan-Pu Chang , Tzu-Yang Lin , Yu-Hung Lai
IPC: H01L25/07 , H01L21/673 , H01L25/13 , H01L25/075
Abstract: A carrier structure suitable for transferring or supporting a plurality of micro devices includes a carrier and a plurality of transfer units. The carrier has a carrier surface and a plurality of recesses disposed on the carrier surface. The transfer units are respectively disposed in the recesses and a plurality of transferring surfaces are exposed. Each micro device has a device surface. The transferring surface of each transfer unit is configured to be connected to the device surface of the corresponding micro device. A micro device structure including the carrier structure is also provided.
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公开(公告)号:US11257860B2
公开(公告)日:2022-02-22
申请号:US17143158
申请日:2021-01-07
Applicant: PlayNitride Display Co., Ltd.
Inventor: Pei-Hsin Chen , Yi-Chun Shih , Yi-Ching Chen , Ying-Tsang Liu , Yu-Chu Li , Tzu-Yang Lin , Yu-Hung Lai
Abstract: A micro LED display panel includes a display area, a plurality of micro light-emitting elements and a plurality of micro control elements. The plurality of micro light-emitting elements is disposed in the display area and include a plurality of first color micro LEDs and a plurality of second color micro LEDs. A light wavelength of each of the first color micro LEDs is different from a light wavelength of each of the second color micro LEDs. The plurality of micro control elements is disposed in the display area, and include a plurality of first color micro circuit-chips and a plurality of second color micro circuit-chips. The plurality of first color micro circuit-chips control the plurality of first color micro LEDs, and the plurality of second color micro circuit-chips control the plurality of second color micro LEDs.
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公开(公告)号:US20210367103A1
公开(公告)日:2021-11-25
申请号:US16996925
申请日:2020-08-19
Applicant: PlayNitride Display Co., Ltd.
Inventor: Yi-Chun Shih , Pei-Hsin Chen , Yi-Ching Chen
Abstract: A micro light emitting diode includes an epitaxial structure, a first electrode, and a second electrode. The epitaxial structure has a surface. The first electrode and the second electrode are respectively disposed on the surface of the epitaxial structure. The second electrode is located outside the first electrode, and the second electrode is symmetrically disposed with respect to a geometric center of the epitaxial structure.
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公开(公告)号:US20210328119A1
公开(公告)日:2021-10-21
申请号:US17002790
申请日:2020-08-26
Applicant: PlayNitride Display Co., Ltd.
Inventor: Yi-Ching Chen , Yi-Chun Shih , Pei-Hsin Chen
Abstract: A micro light-emitting device display apparatus includes a circuit substrate, at least one micro light-emitting device, and at least one conductive bump. The circuit substrate includes at least one pad. The micro light-emitting device is disposed on the circuit substrate and includes at least one electrode. At least one of the pad and the electrode has at least one closed opening. The conductive bump is disposed between the circuit substrate and the micro light-emitting device. The conductive bump extends into the closed opening and defines at least one void with the closed opening. The electrode of the micro light-emitting device is electrically connected to the pad of the circuit substrate with the conductive bump.
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公开(公告)号:US20210119080A1
公开(公告)日:2021-04-22
申请号:US16730788
申请日:2019-12-30
Applicant: PlayNitride Display Co., Ltd.
Inventor: Yi-Ching Chen , Yu-Chu Li
Abstract: A micro light emitting diode chip includes a light emitting layer, a first type semiconductor layer, and a second type semiconductor layer. The light emitting layer includes a metal element and a plurality of non-epitaxial media. The non-epitaxial media are separated from each other to disperse the metal element. A spacing between any two adjacent non-epitaxial media is less than 100 nanometers. The first type semiconductor layer is disposed on one side of the light emitting layer. The second type semiconductor layer is disposed on the other side of the light emitting layer.
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公开(公告)号:US12254800B2
公开(公告)日:2025-03-18
申请号:US18389782
申请日:2023-12-20
Applicant: PlayNitride Display Co., Ltd.
Inventor: Yun-Li Li , Kuan-Yung Liao , Sheng-Yuan Sun , Yi-Ching Chen , Zong Huei Tsai
Abstract: A multi-layer display module includes a first display panel, and a second display panel. Dimension of long side of the first display panel is D1, and the first display panel has first pixel resolution P1. The second display panel is located on one side of the first display panel and overlapped with the first display panel. There is a space d between the first display panel and the second display panel. Dimension of the long side of the second display panel is D2, and the second display panel has the second pixel resolution P2. Transmittance of the second display panel is T2. The multi-layer display module complies with T2>40%, P1≠P2, and D 2 * T 2 ≥ d ≥ D 2 ❘ "\[LeftBracketingBar]" P 1 - P 2 ❘ "\[RightBracketingBar]" * P 2 .
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公开(公告)号:US20240346981A1
公开(公告)日:2024-10-17
申请号:US18389778
申请日:2023-12-20
Applicant: PlayNitride Display Co., Ltd.
Inventor: Yun-Li Li , Kuan-Yung Liao , Sheng-Yuan Sun , Yi-Ching Chen , Zong Huei Tsai
IPC: G09G3/32
CPC classification number: G09G3/32 , G09G2300/023 , G09G2354/00
Abstract: A multi-layer display module includes a first display panel, and a second display panel. The second display panel is located on one side of the first display panel and overlapped with the first display panel. There is a space between the first display panel and the second display panel. Transmittance of the second display panel is T2, luminance of the first display panel is L1, and luminance of the second display panel is L2. The multi-layer display module complies with
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