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公开(公告)号：US20240402004A1
公开(公告)日：2024-12-05
申请号：US17940882
申请日：2022-09-08
Applicant: PsiQuantum Corp,
Inventor： Chia-Jung Chung , Faraz Najafi , George Kovall , Vitor R. Manfrinato , Vimal Kamineni , Mark Thompson , Syrus Ziai
Abstract: A superconductor device includes a barrier layer over a substrate including silicon, the barrier layer including silicon and nitrogen, and a seed layer for a superconductor layer over the barrier layer, the seed layer including aluminum and nitrogen, and superconductor layer over the seed layer, the superconductor layer including a layer of a superconductor material, the barrier layer serving as an oxidation barrier between the layer superconductor material and the substrate. In some embodiments, the superconductor device includes a waveguide and a metal contact at a sufficient distance from the waveguide to prevent optical coupling between the metal contact and the waveguide.
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公开(公告)号：US20210408356A1
公开(公告)日：2021-12-30
申请号：US17114062
申请日：2020-12-07
Applicant: PsiQuantum Corp.
Inventor： Faraz Najafi , Syrus Ziai
IPC: H01L39/08 , H01L39/14 , H01L29/861 , H01L39/24 , H01L39/06 , H01L39/16 , B32B17/10 , B32B37/26 , H01L21/683 , H01L23/24 , H01L27/12
Abstract: An electronic device (e.g., a diode) is provided that includes a substrate and a patterned layer of superconducting material disposed over the substrate. The patterned layer forms a first electrode, a second electrode, and a loop coupling the first electrode with the second electrode by a first channel and a second channel. The first channel and the second channel have different minimum widths. For a range of current magnitudes, when a magnetic field is applied to the patterned layer of superconducting material, the conductance from the first electrode to the second electrode is greater than the conductance from the second electrode to the first electrode.
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公开(公告)号：US20210384878A1
公开(公告)日：2021-12-09
申请号：US17150889
申请日：2021-01-15
Applicant: PSIQUANTUM CORP.
Inventor： Faraz Najafi , Syrus Ziai , Qiaodan Jin Stone
Abstract: A system includes a plurality of superconducting wires connected in parallel with one another. The plurality of superconducting wires includes a first superconducting wire and a second superconducting wire. The plurality of superconducting wires are configured to, while receiving a bias current provided to the parallel combination of the plurality of superconducting wires, operate in a superconducting state in the absence of a trigger current. The first superconducting wire is configured to, while receiving the bias current, transition to a non-superconducting state in response to receiving the trigger current. The second superconducting wire is configured to, while receiving the bias current, transition to a non-superconducting state in response to the first superconducting wire transitioning to the non-superconducting state.
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公开(公告)号：US11009387B2
公开(公告)日：2021-05-18
申请号：US16849829
申请日：2020-04-15
Applicant: PsiQuantum Corp
Inventor： Chia-Jung Chung , Faraz Najafi , George Kovall , Vitor R. Manfrinato , Vimal Kamineni , Mark Thompson , Syrus Ziai
Abstract: A superconductor device according to some embodiments comprises a superconductor stack, which includes a superconductor layer and a silicon cap layer over the superconductor layer, the cap layer including amorphous silicon. The superconductor device further comprises a metal contact over a portion of the silicon cap layer and electrically-coupled to the superconductor layer. The metal contact comprises a core including a first metal, and an outer layer around the core that includes a second metal. The portion of the silicon cap layer is converted from silicon to a conductive compound including the second metal to provide low-resistance electrical coupling between the superconductor layer and the metal contact. The superconductor device further comprises a waveguide, and the first portion of the cap layer under the metal contact is at a sufficient lateral distance from the waveguide to prevent optical coupling between the metal contact and the waveguide.
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公开(公告)号：US10454014B2
公开(公告)日：2019-10-22
申请号：US16182513
申请日：2018-11-06
Applicant: PSIQUANTUM CORP
Inventor： Faraz Najafi , Syrus Ziai
IPC: H01L39/08 , H01L39/14 , H01L29/861 , H01L39/24 , H01L39/06
Abstract: An electronic device (e.g., a diode) is provided that includes a substrate and a patterned layer of superconducting material disposed over the substrate. The patterned layer forms a first electrode, a second electrode, and a loop coupling the first electrode with the second electrode by a first channel and a second channel. The first channel and the second channel have different minimum widths. The device further includes a magnet that applies a magnetic field to the loop, which produces an expulsion current in the loop that travels toward the second electrode in the first channel and toward the first electrode in the second channel. For a range of current magnitudes, when the magnetic field is applied to the patterned layer of superconducting material, the conductance from the first electrode to the second electrode is greater than the conductance from the second electrode to the first electrode.
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Patent Agency Ranking
公开(公告)号：US20230217841A1
公开(公告)日：2023-07-06
申请号：US17986774
申请日：2022-11-14
Applicant: PsiQuantum Corp.
Inventor： Faraz Najafi , Syrus Ziai
IPC: H10N60/83 , H01L29/861 , B32B17/10 , B32B37/26 , H01L21/683 , H01L23/24 , H01L27/12 , H10N60/01 , H10N60/20 , H10N60/30 , H10N60/82
CPC classification number: H10N60/83 , H01L29/861 , B32B17/1055 , B32B37/26 , H01L21/6835 , H01L23/24 , H01L27/1266 , H10N60/01 , H10N60/20 , H10N60/30 , H10N60/82 , H01L2221/6835 , H01L2221/68395
Abstract: An electronic device (e.g., a diode) is provided that includes a substrate and a patterned layer of superconducting material disposed over the substrate. The patterned layer forms a first electrode, a second electrode, and a loop coupling the first electrode with the second electrode by a first channel and a second channel. The first channel and the second channel have different minimum widths. For a range of current magnitudes, when a magnetic field is applied to the patterned layer of superconducting material, the conductance from the first electrode to the second electrode is greater than the conductance from the second electrode to the first electrode.
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公开(公告)号：US11441941B2
公开(公告)日：2022-09-13
申请号：US17232086
申请日：2021-04-15
Applicant: PsiQuantum Corp
Inventor： Chia-Jung Chung , Faraz Najafi , George Kovall , Vitor R. Manfrinato , Vimal Kamineni , Mark Thompson , Syrus Ziai
Abstract: A superconductor device is manufactured by depositing a barrier layer over a substrate including silicon, the barrier layer including silicon and nitrogen; depositing a seed layer for a superconductor layer over the barrier layer, the seed layer including aluminum and nitrogen; depositing the superconductor layer over the seed layer, the superconductor layer including a layer of a superconductor material, the barrier layer serving as an oxidation barrier between the layer superconductor material and the substrate; and depositing a silicon cap layer over the superconductor layer. In some embodiments, the superconductor device includes a waveguide and a metal contact at a sufficient distance from the waveguide to prevent optical coupling between the metal contact and the waveguide.
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公开(公告)号：US10897235B2
公开(公告)日：2021-01-19
申请号：US16553068
申请日：2019-08-27
Applicant: PsiQuantum Corp.
Inventor： Faraz Najafi , Syrus Ziai , Qiaodan Jin Stone
Abstract: A system includes a first superconducting wire and a second superconducting wire connected in parallel. The system includes a first current source coupled to the first superconducting wire and configured to supply a first current in response to a trigger event. The system includes a second current source coupled in series with the parallel combination of the first superconducting wire and the second superconducting wire and configured to supply a second current. The superconducting wires are configured to, while receiving the second current, operate in a superconducting state in the absence of the first current. The first superconducting wire is configured to, while receiving the second current, transition to a non-superconducting state in response to the first current. The second superconducting wire is configured to, while receiving the second current, transition to a non-superconducting state in response to the first superconducting wire transitioning to the non-superconducting state.
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公开(公告)号：US20200350483A1
公开(公告)日：2020-11-05
申请号：US16547471
申请日：2019-08-21
Applicant: PsiQuantum Corp.
Inventor： Faraz Najafi , Syrus Ziai
Abstract: An electronic device (e.g., a diode) is provided that includes a substrate and a patterned layer of superconducting material disposed over the substrate. The patterned layer forms a first electrode, a second electrode, and a loop coupling the first electrode with the second electrode by a first channel and a second channel. The first channel and the second channel have different minimum widths. For a range of current magnitudes, when a magnetic field is applied to the patterned layer of superconducting material, the conductance from the first electrode to the second electrode is greater than the conductance from the second electrode to the first electrode.
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公开(公告)号：US20200333179A1
公开(公告)日：2020-10-22
申请号：US16849829
申请日：2020-04-15
Applicant: PsiQuantum Corp,
Inventor： Chia-Jung Chung , Faraz Najafi , George Kovall , Vitor R. Manfrinato , Vimal Kamineni , Mark Thompson , Syrus Ziai
Abstract: A superconductor device according to some embodiments comprises a superconductor stack, which includes a superconductor layer and a silicon cap layer over the superconductor layer, the cap layer including amorphous silicon. The superconductor device further comprises a metal contact over a portion of the silicon cap layer and electrically-coupled to the superconductor layer. The metal contact comprises a core including a first metal, and an outer layer around the core that includes a second metal. The portion of the silicon cap layer is converted from silicon to a conductive compound including the second metal to provide low-resistance electrical coupling between the superconductor layer and the metal contact. The superconductor device further comprises a waveguide, and the first portion of the cap layer under the metal contact is at a sufficient lateral distance from the waveguide to prevent optical coupling between the metal contact and the waveguide.
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