公开(公告)号：US12264961B2

公开(公告)日：2025-04-01

申请号：US17940882

申请日：2022-09-08

Applicant: PsiQuantum Corp.

Inventor： Chia-Jung Chung ,  Faraz Najafi ,  George Kovall ,  Vitor R. Manfrinato ,  Vimal Kamineni ,  Mark Thompson ,  Syrus Ziai

IPC: G01J1/02 ,  G01J1/44 ,  H01B12/06

Abstract: A superconductor device includes a barrier layer over a substrate including silicon, the barrier layer including silicon and nitrogen, and a seed layer for a superconductor layer over the barrier layer, the seed layer including aluminum and nitrogen, and superconductor layer over the seed layer, the superconductor layer including a layer of a superconductor material, the barrier layer serving as an oxidation barrier between the layer superconductor material and the substrate. In some embodiments, the superconductor device includes a waveguide and a metal contact at a sufficient distance from the waveguide to prevent optical coupling between the metal contact and the waveguide.

公开(公告)号：US20210239518A1

公开(公告)日：2021-08-05

申请号：US17232086

申请日：2021-04-15

Applicant: PsiQuantum Corp,

Inventor： Chia-Jung Chung ,  Faraz Najafi ,  George Kovall ,  Vitor R. Manfrinato ,  Vimal Kamineni ,  Mark Thompson ,  Syrus Ziai

IPC: G01J1/02 ,  G01J1/44 ,  H01B12/06

Abstract: A superconductor device is manufactured by depositing a barrier layer over a substrate including silicon, the barrier layer including silicon and nitrogen; depositing a seed layer for a superconductor layer over the barrier layer, the seed layer including aluminum and nitrogen; depositing the superconductor layer over the seed layer, the superconductor layer including a layer of a superconductor material, the barrier layer serving as an oxidation barrier between the layer superconductor material and the substrate; and depositing a silicon cap layer over the superconductor layer. In some embodiments, the superconductor device includes a waveguide and a metal contact at a sufficient distance from the waveguide to prevent optical coupling between the metal contact and the waveguide.

公开(公告)号：US20240402004A1

公开(公告)日：2024-12-05

申请号：US17940882

申请日：2022-09-08

Applicant: PsiQuantum Corp,

Inventor： Chia-Jung Chung ,  Faraz Najafi ,  George Kovall ,  Vitor R. Manfrinato ,  Vimal Kamineni ,  Mark Thompson ,  Syrus Ziai

IPC: G01J1/02 ,  G01J1/44 ,  H01B12/06

Abstract: A superconductor device includes a barrier layer over a substrate including silicon, the barrier layer including silicon and nitrogen, and a seed layer for a superconductor layer over the barrier layer, the seed layer including aluminum and nitrogen, and superconductor layer over the seed layer, the superconductor layer including a layer of a superconductor material, the barrier layer serving as an oxidation barrier between the layer superconductor material and the substrate. In some embodiments, the superconductor device includes a waveguide and a metal contact at a sufficient distance from the waveguide to prevent optical coupling between the metal contact and the waveguide.

公开(公告)号：US11009387B2

公开(公告)日：2021-05-18

申请号：US16849829

申请日：2020-04-15

Applicant: PsiQuantum Corp

Inventor： Chia-Jung Chung ,  Faraz Najafi ,  George Kovall ,  Vitor R. Manfrinato ,  Vimal Kamineni ,  Mark Thompson ,  Syrus Ziai

IPC: G01J1/02 ,  G01J1/44 ,  H01B12/06

Abstract: A superconductor device according to some embodiments comprises a superconductor stack, which includes a superconductor layer and a silicon cap layer over the superconductor layer, the cap layer including amorphous silicon. The superconductor device further comprises a metal contact over a portion of the silicon cap layer and electrically-coupled to the superconductor layer. The metal contact comprises a core including a first metal, and an outer layer around the core that includes a second metal. The portion of the silicon cap layer is converted from silicon to a conductive compound including the second metal to provide low-resistance electrical coupling between the superconductor layer and the metal contact. The superconductor device further comprises a waveguide, and the first portion of the cap layer under the metal contact is at a sufficient lateral distance from the waveguide to prevent optical coupling between the metal contact and the waveguide.

公开(公告)号：US11441941B2

公开(公告)日：2022-09-13

申请号：US17232086

申请日：2021-04-15

Applicant: PsiQuantum Corp

Inventor： Chia-Jung Chung ,  Faraz Najafi ,  George Kovall ,  Vitor R. Manfrinato ,  Vimal Kamineni ,  Mark Thompson ,  Syrus Ziai

IPC: G01J1/02 ,  G01J1/44 ,  H01B12/06

Abstract: A superconductor device is manufactured by depositing a barrier layer over a substrate including silicon, the barrier layer including silicon and nitrogen; depositing a seed layer for a superconductor layer over the barrier layer, the seed layer including aluminum and nitrogen; depositing the superconductor layer over the seed layer, the superconductor layer including a layer of a superconductor material, the barrier layer serving as an oxidation barrier between the layer superconductor material and the substrate; and depositing a silicon cap layer over the superconductor layer. In some embodiments, the superconductor device includes a waveguide and a metal contact at a sufficient distance from the waveguide to prevent optical coupling between the metal contact and the waveguide.

公开(公告)号：US20200333179A1

公开(公告)日：2020-10-22

申请号：US16849829

申请日：2020-04-15

Applicant: PsiQuantum Corp,

Inventor： Chia-Jung Chung ,  Faraz Najafi ,  George Kovall ,  Vitor R. Manfrinato ,  Vimal Kamineni ,  Mark Thompson ,  Syrus Ziai

IPC: G01J1/02 ,  H01B12/06 ,  G01J1/44

Abstract: A superconductor device according to some embodiments comprises a superconductor stack, which includes a superconductor layer and a silicon cap layer over the superconductor layer, the cap layer including amorphous silicon. The superconductor device further comprises a metal contact over a portion of the silicon cap layer and electrically-coupled to the superconductor layer. The metal contact comprises a core including a first metal, and an outer layer around the core that includes a second metal. The portion of the silicon cap layer is converted from silicon to a conductive compound including the second metal to provide low-resistance electrical coupling between the superconductor layer and the metal contact. The superconductor device further comprises a waveguide, and the first portion of the cap layer under the metal contact is at a sufficient lateral distance from the waveguide to prevent optical coupling between the metal contact and the waveguide.